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Part Manufacturer Description Datasheet BUY
U441 Vishay Siliconix Small Signal Field-Effect Transistor, N-Channel, Junction FET visit Digikey Buy
2N4393 Atmel Corporation Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA visit Digikey Buy
2N4392 Central Semiconductor Corp Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 visit Digikey Buy
U430 Vishay Siliconix Small Signal Field-Effect Transistor, N-Channel, Junction FET visit Digikey Buy
2N4393 Central Semiconductor Corp Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 visit Digikey Buy
U440 Vishay Siliconix Small Signal Field-Effect Transistor, N-Channel, Junction FET visit Digikey Buy

N Channel Junction FET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK1479 Silicon N Channel Junction FET Low Frequency Impedance Converter Features MPAK · Small input capacitance. (Ciss = 3.2 pF typ.) · High |yfs|, small power loss. (|yfs| 3.5 mS typ.) · Suitable for electric condencer Mic impedance converter. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit -­ Gate to drain voltage VGDO , -­ Channel power dissipation Pch 100 mW -­ Channel Hitachi Semiconductor
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Abstract: Datasheet 2N545/ 2N5458 2N5459 wencrai N CHANNEL FET aemicunaunur %iirpa 145 Adams Avenue , World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR 2N5457 series types are Silicon N Channel Junction FET's designed for switching and amplifier applications. MAXIMUM RATINGS (Ta=25°C unless otherwise noted) SYMBOL Drain - Source Voltage D ra i n - Gate Vol tage Gate - Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL -
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FET 2N5459 fet 2n5457 2N545 FET 2N5458 N Channel FET to92 to92 fet p channel 2N5A57 2N5A58
Abstract: centralâ"¢ semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦I 2N5555 N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RATINGS(TA=25°C unless otherwise noted) SYMBOL Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature GS VDS VDG 'G -
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2n5555 Vgs(off) CS 150 10v
Abstract: TF202 N- channel Junction FET Electret Condenser Microphone TENTATIVE Features ·Especially suited for use in electret condenser microphone. ·TF202 is possible to make applied sets smaller and Slimmer. ·Excellent voltage characteristics. ·Excellent transient characteristics. ·Adoption of FBET process. Absolute Maximum Ratings/Ta=25°C Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VGDO IG ID PD Tj Tstg ­20 10 1 100 150 ­55to+150 min ­20 SANYO Electric
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5v electret FET electret microphone 980907TM2
Abstract: 2SK1532 Silicon N Channel Junction FET Low Frequency Amplifier, Analog Switching Features CMPAK · Suitable for low frequency amplifier, variable resistance and analog switching circuit of audio equipment. · Compact packages. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , current ID 10 mA -­ Channel power dissipation Pch 100 mW -­ Channel temperature Tch 150 °C -­ Storage Hitachi Semiconductor
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Low frequency amplifier
Abstract: HITACHI 2SK1479- - Silicon N Channel Junction FET Low Frequency Impedance Converter Features · Small input capacitance. (Ciss = 3.2 pF typ.) · High lyfsl, small power loss. (Iyfsl 3.5 mS typ.) · Suitable for electric condencer Mic impedance converter. M PA K Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol Rating -25 -25 5 5 100 150 -5 5 t o -
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2SK1479-------
Abstract: H ITACHI 2SK1532-Silicon N Channel Junction FET Low Frequency Amplifier, Analog Switching Features · Suitable for low frequency amplifier, variable resistance and analog switching , to drain voltage Gate to source voltage Drain current Channel power dissipation Channel temperature , C XDC 1.2 to 3.0 D XDD 2.6 to 6.5 H ITACH I 2SK1532 í ' - M axim um ch a n n e l d issipa tion curve Typical o u tp u t c h a ra cte ristics . ? c . < i: N \ a c S -
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2SK1532-------------S
Abstract: TS788 N- channel Junction FET Electret Condenser Microphone TENTATIVE Features · Especially suited for use in electret condenser microphone. · TS788 is possible to make applied sets smaller and Slimmer. · Excellent voltage characteristics. · Excellent transient characteristics. · Adoption of FBET process. Absolute Maximum Ratings / Ta=25°C unit VGDO IG ID PD Tj Tstg Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage SANYO Electric
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marking E5 markingE4 971128TM2
Abstract: output pull down resistance is an N channel junction FET. For Vo * V - it is resistive, and for |Vo (V - , EXAR CORP XR-494 91D 04470 D NON-INV , H * O S DEAD TIME 4 f T T CONTROL 1 11 I cT s r r n l i - i . . OUTPUT 11 I CONTROL Z013 + , Current, Peak ± 100 mA Power Dissipation Ceramic (N) Package 1.0 Watt Derate Above + 25°C 6.7 mW/°C -
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XR-2271 XR2271 XR2271CP XR 2271 1468cn 12V fluo XR-1568 XR-1568M XR-1568N XR-1468CN XR-1568/XR-1468C
Abstract: form a semiconductor junction on the channel of a FET to achieve gate control of the channel current , field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , also exist as both n- and p-channel devices. The two main FET groups depend on different phenomena for , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by Siliconix
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P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET AN101
Abstract: Channel NDrain S D P N Depletion Layer P NChannel PGate Final form taken by FET with ntype channel embedded in ptype substrate. Figure 2. Idealized Structure of An NChannel Junction , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , . FET Family Tree (07/11/94) 1 AN101 Siliconix In addition to the channel material, a JFET Temic Semiconductors
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p channel depletion mosfet an101 siliconix N-Channel JFET FETs list of n channel fet Junction FETs JFETs JFETs Junction FETs
Abstract: to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Figure 1. FET Family Tree Siliconix 11-Jul1­94 1 AN101 In addition to the channel material, a , which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion Layer P G N-Channel P-Gate Final form taken by FET with n-type channel embedded in p-type Temic Semiconductors
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Depletion MOSFET 6D list of n channel MOSFET list of fet depletion p mosfet Junction P FET Depletion MOSFET
Abstract: Cross-Section N­ Source Gate The lateral DMOS FET differs radically in its channel construction when , field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , also exist as both n- and p-channel devices. The two main FET groups depend on different phenomena for , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion Temic Semiconductors
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P-Channel Depletion mosFET Siliconix JFET application note shockley diode shockley depletion n channel mosfet P-Channel Depletion-Mode
Abstract: TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with , oxide layer serves as a protective coating for the FET surface and to insulate the channel from the , + ­­­­­­­­­ N+ N+ INDUCED CHANNEL P (SUBSTRATE) Figure 5. Channel Enhancement , . Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the gate-source p-n junction becomes forward biased. The third type of FET operates only in the enhancement Motorola
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2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N4221 motorola 2N3797 equivalent AN211A/D AN211A
Abstract: P-CHANNEL MOSFET ID N MOS FIELD-EFFECT TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with Single-Ended Geometry SOURCE N P (SUBSTRATE) (a) OXIDE , JFET SOURCE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) P P SOURCE N DRAIN N , + ­­­­­­­­­ N+ N+ INDUCED CHANNEL P (SUBSTRATE) Figure 5. Channel Enhancement , . Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the Motorola
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MPF102 Transistor MPF102 JFET data sheet mpf102 equivalent P channel depletion mode fet JFET TRANSISTOR REPLACEMENT GUIDE mpf102 equivalent
Abstract: current in the 2 GATE P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with Single-Ended Geometry SOURCE DRAIN N N P (SUBSTRATE) P (SUBSTRATE) (a , - N+ INDUCED CHANNEL N+ Freescale Semiconductor, Inc. P (SUBSTRATE) Figure 5 , large gate voltages. Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the gate-source p-n junction becomes forward biased. The third type of FET operates Motorola
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motorola AN211A 2N4221 MOTOROLA POWER TRANSISTOR JFET with Yos MPF102 circuit application 2N4351 MOTOROLA TRANSISTOR REPLACEMENT GUIDE FET
Abstract: into the channel until they meet, È È È È È È N (a) (-) P P N DRAIN SOURCE ÈÇÇÈ ÇÇÇ ÇÇÇ È , ËËËËËËËË ËËËË ËËËËËËËË ËËËË ËËËËËËËË ËËËË ËËËËËËËË ËËËË P P (SUBSTRATE) ID N P L CHANNEL LENGTH MOS , for the FET surface and to insulate the channel from the gate. However, the oxide is subject to , connected back to back. Figure 3. Junction FET with Single-Ended Geometry http://onsemi.com 2 , EnhancementMode MOSFET ÍÍÍÍÍÍÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍÍÍÍÍÍÍ N+ N+ Figure 5. Channel Enhancement. Application of ON Semiconductor
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2N4351 mpf102 application note 2N5458 equivalent an211ad equivalent to MPF102 Transistors mpf102 replacement
Abstract: necessary to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , incorporated 6-10 Junction FET Capacitances Associated with the junction between the gate and the channel of a , enhancement or depletion modes, and exist as both N- and P-Channel devices. The two main FET groups depend on , a reverse-biased PN junction formed along the channel. Implicit in this description is the fundamental difference between FET and bipolar devices: when the FET junction is reverse-biased the gate -
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FET E202 2N3631 2N3823 E202 depletion mode mosfet 100 MHz 2N2606
Abstract: dual-phase, single output regulator. The output of each channel can be independently adjusted from 1.3V to , response to fast load transients. Current is sensed across either the Vds of the top FET or across an external currentsense resistor connected in series with the drain of the top FET. The LM5642 features , soft-start behavior more predictable and controllable than traditional soft-start circuits. n n n n n , off time for the IC during an output under-voltage event. n n n n n n n n n n n n n n National Semiconductor
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LM5642X fZ80 AN-1229 TOSW24 Si4850EY LM5642XMT LM5642/LM5642X CSP-9-111C2 CSP-9-111S2
Abstract: INTEGRATED CIRCUIT TPD7000F 4-CHANNEL LOW -SIDE POW ER M O S FET DRIVER TPD7000F is a power MOS FET driver for low-side switching. This 4-channel driver with a built-in circuit is used to monitor the voltage between the MOS FET drain and source for each channel and to output the state of the power MOS FET. FEATURES â'¢ Low-side N-channel power MOS FET driver (input capacitance: 15nF Max). â'¢ Incorporates a power MOS FET overcurrent protection function. â'¢ Incorporates induction load energy -
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961001EBA2 SSOP24-P-300-1
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