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TPIC2202KC Texas Instruments TRANSISTOR 7.5 A, 60 V, 0.125 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power ri Buy
TPIC5201KV Texas Instruments TRANSISTOR 0.75 A, 60 V, 0.125 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, KV, 7 PIN, FET General Purpose Power ri Buy
TPIC2701MJ Texas Instruments TRANSISTOR 0.5 A, 60 V, 0.8 ohm, 7 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power ri Buy

N Channel Junction FET

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2SK1479 2SK1479 Silicon N Channel Junction FET Low Frequency Impedance Converter Features MPAK · Small input capacitance. (Ciss = 3.2 pF typ.) · High |yfs|, small power loss. (|yfs| 3.5 mS typ.) · Suitable for electric condencer Mic impedance converter. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit -­ Gate to drain voltage VGDO , -­ Channel power dissipation Pch 100 mW -­ Channel ... Original
datasheet

4 pages,
408.77 Kb

2SK1479 2SK1479 abstract
datasheet frame
Abstract: Datasheet 2N545/ 2N545/ 2N5458 2N5458 2N5459 2N5459 wencrai N CHANNEL FET aemicunaunur %iirpa 145 Adams Avenue , World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR 2N5457 2N5457 series types are Silicon N Channel Junction FET's designed for switching and amplifier applications. MAXIMUM RATINGS (Ta=25°C unless otherwise noted) SYMBOL Drain - Source Voltage D ra i n - Gate Vol tage Gate - Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS ... OCR Scan
datasheet

1 pages,
58.68 Kb

to92 fet p channel N Channel FET to92 2N5459 2N5458 2N5457 FET 2N5458 2N545 fet 2n5457 FET 2N5459 datasheet abstract
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Abstract: central™ semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦I 2N5555 2N5555 N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RATINGS(TA=25°C unless otherwise noted) SYMBOL Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature GS VDS VDG 'G ... OCR Scan
datasheet

2 pages,
90.08 Kb

CS 150 10v 2n5555 Vgs(off) 2N5555 2N5555 abstract
datasheet frame
Abstract: 2SK1532 2SK1532 Silicon N Channel Junction FET Low Frequency Amplifier, Analog Switching Features CMPAK · Suitable for low frequency amplifier, variable resistance and analog switching circuit of audio equipment. · Compact packages. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , current ID 10 mA -­ Channel power dissipation Pch 100 mW -­ Channel temperature Tch 150 °C -­ Storage ... Original
datasheet

3 pages,
217.17 Kb

Low frequency amplifier 2SK1532 2SK1532 abstract
datasheet frame
Abstract: H ITACHI 2SK1532-Silicon N Channel Junction FET Low Frequency Amplifier, Analog Switching Features · Suitable for low frequency amplifier, variable resistance and analog switching , to drain voltage Gate to source voltage Drain current Channel power dissipation Channel temperature , C XDC 1.2 to 3.0 D XDD 2.6 to 6.5 H ITACH I 2SK1532 2SK1532 í ' - M axim um ch a n n e l d issipa tion curve Typical o u tp u t c h a ra cte ristics . ? c . < i: N \ a c S ... OCR Scan
datasheet

3 pages,
140.27 Kb

2SK1532 datasheet abstract
datasheet frame
Abstract: HITACHI 2SK1479- 2SK1479- - Silicon N Channel Junction FET Low Frequency Impedance Converter Features · Small input capacitance. (Ciss = 3.2 pF typ.) · High lyfsl, small power loss. (Iyfsl 3.5 mS typ.) · Suitable for electric condencer Mic impedance converter. M PA K Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol Rating -25 -25 5 5 100 150 -5 5 t o ... OCR Scan
datasheet

4 pages,
177.14 Kb

2SK1479 2SK1479------- 2SK1479------- abstract
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Abstract: TS788 TS788 N- channel Junction FET Electret Condenser Microphone TENTATIVE Features · Especially suited for use in electret condenser microphone. · TS788 TS788 is possible to make applied sets smaller and Slimmer. · Excellent voltage characteristics. · Excellent transient characteristics. · Adoption of FBET process. Absolute Maximum Ratings / Ta=25°C unit VGDO IG ID PD Tj Tstg Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature ... Original
datasheet

1 pages,
10.04 Kb

TS788 marking E5 TS788 abstract
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Abstract: TF202 TF202 N- channel Junction FET Electret Condenser Microphone TENTATIVE Features 稥specially suited for use in electret condenser microphone. 稵F202 is possible to make applied sets smaller and Slimmer. 稥xcellent voltage characteristics. 稥xcellent transient characteristics. 稟doption of FBET process. Absolute Maximum Ratings/Ta=25癈 Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VGDO IG ID PD Tj Tstg � 10 1 100 150 �to+150 min � �2 140 ... Original
datasheet

1 pages,
12 Kb

TF202 TF202 abstract
datasheet frame
Abstract: output pull down resistance is an N channel junction FET. For Vo * V - it is resistive, and for |Vo (V - , EXAR CORP XR-494 XR-494 91D 04470 D NON-INV , OUT H * O S DEAD TIME 4 f T T CONTROL 1 11 I cT s r r n l i - i . . OUTPUT 11 I CONTROL Z013 , mA Power Dissipation Ceramic (N) Package 1.0 Watt Derate Above + 25°C 6.7 mW/°C Operating Temperature ... OCR Scan
datasheet

5 pages,
320.99 Kb

1468 cn XR 2271 XR-2271 XR2271 XR-2271 abstract
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Abstract: to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Figure 1. FET Family Tree Siliconix 11-Jul1╜94 1 AN101 AN101 In addition to the channel material, a , which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion Layer P G N-Channel P-Gate Final form taken by FET with n-type channel embedded in p-type ... Original
datasheet

5 pages,
73.23 Kb

mosfet p-type N-Channel depletion mos P-Channel Depletion Mosfet depletion n channel mosfet Depletion MOSFET diode shockley AN101 Junction P FET shockley diode application n channel depletion MOSFET depletion p mosfet P-Channel Depletion Mosfets AN101 abstract
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Datasheet Content (non pdf)

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; ! bias breakdown voltage( gate-drain junction) IS: 6.44183e-13 ; ! gate junction reverse saturation current( diode model) N: 1.13546 ; ! gate junction ideality factor (diode model (Raytheon) GaAsFET Model for LIBRA ! ! measured data is from: ! 1.0*16*250 4mm-Fet from HP 127/3 capacitance TAU: 14.5687pS ; ! transit time under gate RIN: 1.25429 ; ! channel gate-source junction capacitance CGDO: 0.262905pF ; ! zero bias gate-drain junction capacitance
www.datasheetarchive.com/files/infineon/ehdata/nl_gaas/cly5/statz_8v.mod
Infineon 23/07/1997 2.14 Kb MOD statz_8v.mod
No abstract text available
www.datasheetarchive.com/download/44210964-145463ZC/cly5.zip (STATZ_4V.MOD)
Infineon 08/09/2000 191.27 Kb ZIP cly5.zip
No abstract text available
www.datasheetarchive.com/download/44210964-145463ZC/cly5.zip (STATZ_8V.MOD)
Infineon 08/09/2000 191.27 Kb ZIP cly5.zip
; ! bias breakdown voltage( gate-drain junction) IS: 6.44183e-13 ; ! gate junction reverse saturation current( diode model) N: 1.13546 ; ! gate junction ideality factor (diode model (Raytheon) GaAsFET Model for LIBRA ! ! measured data is from: ! 1.0*16*250 4mm-Fet from HP 127/3 capacitance TAU: 14.2312pS ; ! transit time under gate RIN: 1.92318 ; ! channel gate-source junction capacitance CGDO: 0.41594pF ; ! zero bias gate-drain junction capacitance
www.datasheetarchive.com/files/infineon/ehdata/nl_gaas/cly5/statz_4v.mod
Infineon 23/07/1997 2.14 Kb MOD statz_4v.mod
channel temperature (T ch ) of a GaAs FET E F G H I J K L M N O P Q R S T U H I J K L M N O P Q R S T U V W X Maximum Junction Temperature ( T j MAX ) Maximum allowable transistor junction temperature. Silicon transistors normally
www.datasheetarchive.com/files/agilent/hprfhelp/glossary/glos_k_o/maxjctmp.htm
Agilent 23/11/1999 13.98 Kb HTM maxjctmp.htm
source impedances to be used without degrading accuracy. P-channel junction FET's are combined with [Information as of 12-Aug-99] LF398 LF398 LF398 LF398 Monolithic Sample and Hold Circuit Generic P/N 398 LF398M LF398M LF398M LF398M SOIC 14 Full production N/A N/A . 1K+ $1.2300 tube of 55 [logo]¢U¢Z¢2¢T LF398M LF398M LF398M LF398M LF398MX LF398MX LF398MX LF398MX SOIC 14 Full production N/A N/A . 1K+ $1.2600 reel of 2500 [logo]¢U¢Z¢2¢T LF398M LF398M LF398M LF398M LF398N LF398N LF398N LF398N MDIP 8 Full production N/A N/A . 1K+ $1.2300 tube of 40 [logo]¢U¢Z¢2¢T LF 398N LF398H LF398H LF398H LF398H TO-5 8 Full production N/A N
www.datasheetarchive.com/files/national/htm/nsc02385-v7.htm
National 13/08/1999 20.68 Kb HTM nsc02385-v7.htm
source impedances to be used without degrading accuracy. P-channel junction FET's are combined with [Information as of 12-Aug-99] LF398 LF398 LF398 LF398 Monolithic Sample and Hold Circuit Generic P/N 398 LF398M LF398M LF398M LF398M SOIC 14 Full production N/A N/A . 1K+ $1.2300 tube of 55 [logo]¢U¢Z¢2¢T LF398M LF398M LF398M LF398M LF398MX LF398MX LF398MX LF398MX SOIC 14 Full production N/A N/A . 1K+ $1.2600 reel of 2500 [logo]¢U¢Z¢2¢T LF398M LF398M LF398M LF398M LF398N LF398N LF398N LF398N MDIP 8 Full production N/A N/A . 1K+ $1.2300 tube of 40 [logo]¢U¢Z¢2¢T LF 398N LF398H LF398H LF398H LF398H TO-5 8 Full production N/A N
www.datasheetarchive.com/files/national/htm/nsc02385-v1.htm
National 13/08/1999 20.68 Kb HTM nsc02385-v1.htm
be used without degrading accuracy. P-channel junction FET's are combined with bipolar devices in [Information as of 14-Dec-98] LF398 LF398 LF398 LF398 Monolithic Sample and Hold Circuit Generic P/N 398 Contents Commercial SOIC 14 Full production N/A N/A . $1.7500 tube of 55 [logo][fab][asm][date-code(yw)][die-run(2)] LF398M LF398M LF398M LF398M LF398MX LF398MX LF398MX LF398MX Commercial SOIC 14 Full production N/A N/A . $1.7900 reel of 2500 [logo][fab][asm][date-code(yw)][die-run(2)] LF398M LF398M LF398M LF398M LF398N LF398N LF398N LF398N Commercial MDIP 8 Full production N/A N/A .
www.datasheetarchive.com/files/national/htm/nsc05550.htm
National 18/12/1998 17.24 Kb HTM nsc05550.htm
P-channel junction FET's are combined with bipolar devices in the output amplifier to give droop rates as 1-Apr-98] LF398 LF398 LF398 LF398 Monolithic Sample and Hold Circuit Generic P/N 398 Contents General Type # pins SPICE IBIS Quantity $US ea LF398M LF398M LF398M LF398M Commercial SOIC 14 Full production N/A N/A . Catalog SOIC 14 Full production N/A N/A . 1000-2499 $1.7900 reel of 2500 [logo][asm][date-code(yw)][die-run(2)] LF398M LF398M LF398M LF398M LF398N LF398N LF398N LF398N Commercial MDIP 8 Full production N/A N/A . 100-999 $1.2700 tube of
www.datasheetarchive.com/files/national/docs/wcd00004/wcd00479.htm
National 03/04/1998 14.64 Kb HTM wcd00479.htm
P-channel junction FET's are combined with bipolar devices in the output amplifier to give droop rates as [Information as of 11-Sep-98] LF398 LF398 LF398 LF398 Monolithic Sample and Hold Circuit Generic P/N 398 Contents Type # pins SPICE IBIS $US ea (1K qty) LF398M LF398M LF398M LF398M Commercial SOIC 14 Full production N/A N/A . production N/A N/A . - reel of 2500 [logo][fab][asm][date-code(yw)][die-run(2)] LF398M LF398M LF398M LF398M LF398N LF398N LF398N LF398N Commercial MDIP 8 Full production N/A N/A . $1.2700 tube of 40 [logo][fab][asm][date-code(yw
www.datasheetarchive.com/files/national/htm/nsc03099-v4.htm
National 16/09/1998 16.17 Kb HTM nsc03099-v4.htm