NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SK1479 2SK1479 Silicon N Channel Junction FET Low Frequency Impedance Converter Features MPAK · Small input capacitance. (Ciss = 3.2 pF typ.) · High |yfs|, small power loss. (|yfs| 3.5 mS typ.) · Suitable for electric condencer Mic impedance converter. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit - Gate to drain voltage VGDO , - Channel power dissipation Pch 100 mW - Channel ... | Original |
4 pages, |
2SK1479 2SK1479 abstract |
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| Abstract: Datasheet 2N545/ 2N545/ 2N5458 2N5458 2N5459 2N5459 wencrai N CHANNEL FET aemicunaunur %iirpa 145 Adams Avenue , World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR 2N5457 2N5457 series types are Silicon N Channel Junction FET's designed for switching and amplifier applications. MAXIMUM RATINGS (Ta=25°C unless otherwise noted) SYMBOL Drain - Source Voltage D ra i n - Gate Vol tage Gate - Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS ... | OCR Scan |
1 pages, |
to92 fet p channel N Channel FET to92 2N5459 2N5458 2N5457 2N545 FET 2N5458 FET 2N5459 fet 2n5457 2N545/ 2N545/ abstract |
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| Abstract: central™ semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦I 2N5555 2N5555 N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RATINGS(TA=25°C unless otherwise noted) SYMBOL Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature GS VDS VDG 'G ... | OCR Scan |
2 pages, |
2n5555 Vgs(off) 2N5555 2N5555 abstract |
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| Abstract: 2SK1532 2SK1532 Silicon N Channel Junction FET Low Frequency Amplifier, Analog Switching Features CMPAK · Suitable for low frequency amplifier, variable resistance and analog switching circuit of audio equipment. · Compact packages. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , current ID 10 mA - Channel power dissipation Pch 100 mW - Channel temperature Tch 150 °C - Storage ... | Original |
3 pages, |
Low frequency amplifier 2SK1532 2SK1532 abstract |
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| Abstract: SONY» 2SK23A 2SK23A Silicon N Channel Junction FET • ÄÄDC-to-VHF Use. Low Noise. High Reliability • Economical Type: 2SK107 2SK107 t Dual Typ«: 2SK58 2SK58 Absolute Maximum Ratings Ti= 25 C Characteristics Symbol 2SK23A-8 2SK23A-8 2SK23A9 2SK23A9 Drain to-Gate Voltage Vogo 27 V 40 V Soiree-to-Gate Voltage Vsgo 9 V Drain Current «d 20 mA Gate Current 10 mA Power Dissipation P 250 mW Junction Temperature T, 100'C Storage Temperature T«. 30-^120°C he «ss Electrical Characteristics Ta*26'>C Characteristics Symbol Conditions ... | OCR Scan |
1 pages, |
2SK58 2SK23A9 2SK23A-8 2SK23A FET 2SK23A 2SK107 2SK23A abstract |
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| Abstract: TS788 TS788 N- channel Junction FET Electret Condenser Microphone TENTATIVE Features · Especially suited for use in electret condenser microphone. · TS788 TS788 is possible to make applied sets smaller and Slimmer. · Excellent voltage characteristics. · Excellent transient characteristics. · Adoption of FBET process. Absolute Maximum Ratings / Ta=25°C unit VGDO IG ID PD Tj Tstg Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature ... | Original |
1 pages, |
TS788 marking E5 TS788 abstract |
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| Abstract: field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , also exist as both n- and p-channel devices. The two main FET groups depend on different phenomena for , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion Layer N-Channel P P-Gate Final form taken by FET with n-type channel embedded in p-type ... | Original |
5 pages, |
fet junction n-channel transistor n channel j fet n mosfet depletion p channel j fet AN101 P-Channel Depletion-Mode depletion n channel mosfet diode shockley N-Channel depletion mos N-Channel JFET FETs shockley shockley diode AN101 abstract |
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| Abstract: to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Figure 1. FET Family Tree Siliconix 11-Jul1╜94 1 AN101 AN101 In addition to the channel material, a , which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion Layer P G N-Channel P-Gate Final form taken by FET with n-type channel embedded in p-type ... | Original |
5 pages, |
AN101 depletion p mosfet P-Channel Depletion Mosfet list of fet N-Channel depletion mos diode shockley Junction P FET shockley diode application P-Channel Depletion Mode FET P-Channel Depletion Mosfets shockley diode list of n channel fet AN101 abstract |
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| Abstract: form a semiconductor junction on the channel of a FET to achieve gate control of the channel current. , field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , also exist as both n- and p-channel devices. The two main FET groups depend on different phenomena for , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by ... | Original |
5 pages, |
p-channel jfet list of n channel power mosfet list of P channel power mosfet mosfet depletion p channel depletion mosfet P-Channel Depletion Mosfet datasheet Depletion MOSFET depletion mode mosfet depletion mode fet P-Channel Depletion Mode FET shockley AN101 AN101 abstract |
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| Abstract: necessary to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , 1. FET Family Tree (07/11/94) 1 AN101 AN101 Siliconix In addition to the channel material, a , NSource Channel NDrain S D P N Depletion Layer P NChannel PGate Final form taken by FET with ntype channel embedded in ptype substrate. Figure 2. Idealized Structure of An ... | Original |
5 pages, |
"P-Channel JFET" semiconductor AN101 an101 siliconix Depletion MOSFET 6D fet free Junction P FET N-Channel JFET FETs P-Channel Depletion Mode FET jfet idss 10 ma vp -3 Depletion MOSFET P-Channel Depletion Mosfets list of n channel fet AN101 abstract |
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| - N-channel junction FETs BF861B BF861B BF861B BF861B - N-channel junction FETs BF861C BF861C BF861C BF861C - N-channel junction FETs BF862 BF862 BF862 BF862 - N-channel junction FET J108 - N-channel silicon junction FETs www.datasheetarchive.com/files/philips/catalog/listing/28130.html |
Philips | 25/04/2003 | 4.62 Kb | HTML | 28130.html |
| Product listing BF861A BF861A BF861A BF861A - N-channel junction FETs BF861B BF861B BF861B BF861B - N-channel junction FETs BF861C BF861C BF861C BF861C - N-channel junction FETs BF862 BF862 BF862 BF862 - N-channel junction FET J108 - N-channel silicon junction FETs J109 - N-channel silicon junction FETs J110 - N-channel silicon junction FETs PMBFJ308 PMBFJ308 PMBFJ308 PMBFJ308 - N-channel silicon field-effect transistors PMBFJ309 PMBFJ309 PMBFJ309 PMBFJ309 - N-channel silicon field-effect transistors www.datasheetarchive.com/files/philips/catalog/listing/28130-v1.html |
Philips | 17/02/2002 | 3.67 Kb | HTML | 28130-v1.html |
| - N-channel junction FETs BF861B BF861B BF861B BF861B - N-channel junction FETs BF861C BF861C BF861C BF861C - N-channel junction FETs BF862 BF862 BF862 BF862 - N-channel junction FET J108 - N-channel silicon junction FETs www.datasheetarchive.com/files/philips/catalog/listing/28130-v2.html |
Philips | 01/06/2005 | 4.59 Kb | HTML | 28130-v2.html |
| J108 - N-channel silicon junction FETs J109 - N-channel silicon junction FETs J110 - N-channel silicon junction FETs PMBFJ108 PMBFJ108 PMBFJ108 PMBFJ108 - N-channel junction FETs PMBFJ109 PMBFJ109 PMBFJ109 PMBFJ109 - N-channel junction FETs www.datasheetarchive.com/files/philips/catalog/listing/15528.html |
Philips | 25/04/2003 | 8.69 Kb | HTML | 15528.html |
| J108 - N-channel silicon junction FETs J109 - N-channel silicon junction FETs J110 - N-channel silicon junction FETs PMBFJ108 PMBFJ108 PMBFJ108 PMBFJ108 - N-channel junction FETs PMBFJ109 PMBFJ109 PMBFJ109 PMBFJ109 - N-channel junction FETs www.datasheetarchive.com/files/philips/catalog/listing/15528-v2.html |
Philips | 01/06/2005 | 7.7 Kb | HTML | 15528-v2.html |
| - N-channel FETs BSR58 BSR58 BSR58 BSR58 - N-channel FETs J108 - N-channel silicon junction FETs J109 - N-channel silicon junction FETs J110 - N-channel silicon junction FETs - N-channel junction FETs PMBFJ109 PMBFJ109 PMBFJ109 PMBFJ109 - N-channel junction FETs PMBFJ110 PMBFJ110 PMBFJ110 PMBFJ110 - N-channel junction FETs PMBFJ111 PMBFJ111 PMBFJ111 PMBFJ111 - N-channel junction FETs PMBFJ112 PMBFJ112 PMBFJ112 PMBFJ112 - N-channel junction FETs PMBFJ113 PMBFJ113 PMBFJ113 PMBFJ113 - N-channel junction FETs PN4391 PN4391 PN4391 PN4391 - N-channel silicon field-effect transistors www.datasheetarchive.com/files/philips/catalog/listing/15528-v1.html |
Philips | 17/02/2002 | 7.38 Kb | HTML | 15528-v1.html |
| 108 - N-channel silicon junction FETs J109 - N-channel silicon junction FETs J110 - N-channel silicon junction FETs J111 - N-channel silicon field-effect transistors J112 - N-channel silicon FETs PMBF4392 PMBF4392 PMBF4392 PMBF4392 - N-channel FETs PMBF4393 PMBF4393 PMBF4393 PMBF4393 - N-channel FETs PMBFJ108 PMBFJ108 PMBFJ108 PMBFJ108 - N-channel junction FETs PMBFJ109 PMBFJ109 PMBFJ109 PMBFJ109 - N-channel junction FETs PMBFJ110 PMBFJ110 PMBFJ110 PMBFJ110 - N-channel junction FETs PMBFJ111 PMBFJ111 PMBFJ111 PMBFJ111 - N-channel junction FETs PMBFJ112 PMBFJ112 PMBFJ112 PMBFJ112 - N-channel junction FETs PMBFJ113 PMBFJ113 PMBFJ113 PMBFJ113 - N-channel junction FETs PN4391 PN4391 PN4391 PN4391 - N-channel www.datasheetarchive.com/files/philips/catalog/219/282/27046/30928/15490/15528/index.htm |
Philips | 17/02/2002 | 87.36 Kb | HTM | index.htm |
| BF861A BF861A BF861A BF861A - N-channel junction FETs BF861B BF861B BF861B BF861B - N-channel junction FETs BF861C BF861C BF861C BF861C - N-channel junction FETs BF862 BF862 BF862 BF862 - N-channel junction FET Product listing for N-channel junction field-effect transistors www.datasheetarchive.com/files/philips/catalog/listing/15491-v2.html |
Philips | 01/06/2005 | 9.98 Kb | HTML | 15491-v2.html |
| BF861A BF861A BF861A BF861A - N-channel junction FETs BF861B BF861B BF861B BF861B - N-channel junction FETs BF861C BF861C BF861C BF861C - N-channel junction FETs BF862 BF862 BF862 BF862 - N-channel junction FET Product listing for N-channel junction field-effect transistors www.datasheetarchive.com/files/philips/catalog/listing/15491.html |
Philips | 25/04/2003 | 9.89 Kb | HTML | 15491.html |
| BB804W BB804W BB804W BB804W - VHF variable capacitance double diode BF861A BF861A BF861A BF861A - N-channel junction FETs BF861B BF861B BF861B BF861B - N-channel junction FETs BF861C BF861C BF861C BF861C - N-channel junction FETs BF862 BF862 BF862 BF862 - N-channel J108 - N-channel silicon junction FETs J109 - N-channel silicon junction FETs J110 - N-channel silicon junction FETs PMBFJ308 PMBFJ308 PMBFJ308 PMBFJ308 - N-channel silicon field 908WR 908WR 908WR 908WR - N-channel dual-gate MOS-FET BF998 BF998 BF998 BF998 - Silicon N-channel dual-gate MOS-FETs www.datasheetarchive.com/files/philips/catalog/listing/28098-v1.html |
Philips | 17/02/2002 | 6.72 Kb | HTML | 28098-v1.html |