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N Channel Junction FET

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Abstract: form a semiconductor junction on the channel of a FET to achieve gate control of the channel current , field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , also exist as both n- and p-channel devices. The two main FET groups depend on different phenomena for , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by ... Siliconix
Original
datasheet

5 pages,
41.68 Kb

N-Channel JFET FETs list of P channel power mosfet mosfet depletion P-Channel Depletion Mosfet datasheet depletion mode mosfet p channel depletion mosfet Depletion MOSFET depletion mode fet shockley diode shockley jfet idss 10 ma vp -3 list of n channel fet AN101 n channel depletion MOSFET AN101 shockley diode datasheet AN101 shockley diode application AN101 P-Channel Depletion Mode FET AN101 shockley diode AN101 P-Channel Depletion Mosfets AN101 AN101 AN101 TEXT
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Abstract: Channel NDrain S D P N Depletion Layer P NChannel PGate Final form taken by FET with ntype channel embedded in ptype substrate. Figure 2. Idealized Structure of An NChannel Junction , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , . FET Family Tree (07/11/94) 1 AN101 AN101 Siliconix In addition to the channel material, a JFET ... Temic Semiconductors
Original
datasheet

5 pages,
97.75 Kb

transistor working principle "P-Channel JFET" semiconductor AN101 Depletion MOSFET 6D fet free Junction P FET "Junction FETs, JFETs" Siliconix jfet Application Note Siliconix AN Depletion MOSFET P-Channel Depletion Mosfets jfet idss 10 ma vp -3 JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET N-Channel JFET FETs an101 siliconix P-Channel Depletion Mode FET p channel depletion mosfet TEXT
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Abstract: to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Figure 1. FET Family Tree Siliconix 11-Jul1­94 1 AN101 AN101 In addition to the channel material, a , which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion Layer P G N-Channel P-Gate Final form taken by FET with n-type channel embedded in p-type ... Temic Semiconductors
Original
datasheet

5 pages,
73.23 Kb

Siliconix N-Channel JFET diode shockley "Junction FETs, JFETs" AN101 shockley diode application Junction P FET depletion p mosfet JFETs Junction FETs Junction FETs JFETs list of fet N-Channel JFET FETs P-Channel Depletion Mosfets list of n channel MOSFET Depletion MOSFET 6D n channel depletion MOSFET shockley diode P-Channel Depletion Mode FET list of n channel fet p channel depletion mosfet TEXT
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Abstract: Cross-Section N­ Source Gate The lateral DMOS FET differs radically in its channel construction when , field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , also exist as both n- and p-channel devices. The two main FET groups depend on different phenomena for , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion ... Temic Semiconductors
Original
datasheet

5 pages,
63.07 Kb

Depletion MOSFET P-Channel Depletion-Mode depletion n channel mosfet depletion p mosfet diode shockley JFETs Junction FETs Junction FETs JFETs N-Channel depletion mos shockley shockley diode p channel depletion mosfet list of n channel fet AN101 Siliconix JFET application note AN101 N-Channel JFET FETs AN101 P-Channel Depletion mosFET AN101 n channel depletion MOSFET AN101 P-Channel Depletion Mosfets AN101 P-Channel Depletion Mode FET AN101 AN101 AN101 TEXT
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Abstract: TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with , oxide layer serves as a protective coating for the FET surface and to insulate the channel from the , + ­­­­­­­­­ N+ N+ INDUCED CHANNEL P (SUBSTRATE) Figure 5. Channel Enhancement , . Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the gate-source p-n junction becomes forward biased. The third type of FET operates only in the enhancement ... Motorola
Original
datasheet

12 pages,
135.95 Kb

jfet idss 10 vp -4 MPF102 n-channel mpf102 equivalent P channel 12BL6 2N4221 transistor mpf102 2N4351 mpf102 equivalent motorola AN211A TRANSISTOR REPLACEMENT GUIDE FET igfet JFET TRANSISTOR REPLACEMENT GUIDE P-Channel Depletion Mode FET AN211A/D MPF102 Transistor AN211A/D 2N4221 motorola AN211A/D 2N3797 equivalent AN211A/D mpf102 fet AN211A/D MPF102 JFET AN211A/D MPF102 equivalent transistor AN211A/D 2N3797 AN211A/D AN211A/D AN211A/D TEXT
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Abstract: P-CHANNEL MOSFET ID N MOS FIELD-EFFECT TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with Single-Ended Geometry SOURCE N P (SUBSTRATE) (a) OXIDE , JFET SOURCE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) P P SOURCE N DRAIN N , + ­­­­­­­­­ N+ N+ INDUCED CHANNEL P (SUBSTRATE) Figure 5. Channel Enhancement , . Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the ... Motorola
Original
datasheet

12 pages,
136.24 Kb

MPF102 circuit application 2N5458 equivalent MPF102 transistor mpf102 TRANSISTOR REPLACEMENT GUIDE FET mpf102 equivalent JFET TRANSISTOR REPLACEMENT GUIDE depletion mode fet n channel depletion MOSFET P-Channel Depletion Mosfets mpf102 equivalent P channel 2N4221 motorola AN211A/D 2N3797 equivalent AN211A/D mpf102 fet AN211A/D 2N3797 AN211A/D MPF102 JFET data sheet AN211A/D MPF102 Transistor AN211A/D MPF102 equivalent transistor AN211A/D MPF102 JFET AN211A/D AN211A/D AN211A/D TEXT
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Abstract: current in the 2 GATE P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with Single-Ended Geometry SOURCE DRAIN N N P (SUBSTRATE) P (SUBSTRATE) (a , - N+ INDUCED CHANNEL N+ Freescale Semiconductor, Inc. P (SUBSTRATE) Figure 5 , large gate voltages. Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the gate-source p-n junction becomes forward biased. The third type of FET operates ... Motorola
Original
datasheet

12 pages,
326.94 Kb

mpf102 fet 2N4221 2N4351 2N4220 MOTOROLA mpf102 Application Note TRANSISTOR A64 igfet P-Channel Depletion Mosfets MPF102 equivalent transistor TRANSISTOR REPLACEMENT GUIDE FET 2N4351 MOTOROLA MPF102 circuit application JFET with Yos AN211A/D 2N4221 motorola AN211A/D 2N4221 MOTOROLA POWER TRANSISTOR AN211A/D MPF102 Transistor AN211A/D 2N3797 AN211A/D motorola AN211A AN211A/D MPF102 JFET AN211A/D AN211A/D AN211A/D TEXT
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Abstract: into the channel until they meet, È È È È È È N (a) (-) P P N DRAIN SOURCE ÈÇÇÈ ÇÇÇ ÇÇÇ È , ËËËËËËËË ËËËË ËËËËËËËË ËËËË ËËËËËËËË ËËËË ËËËËËËËË ËËËË P P (SUBSTRATE) ID N P L CHANNEL LENGTH MOS , for the FET surface and to insulate the channel from the gate. However, the oxide is subject to , connected back to back. Figure 3. Junction FET with Single-Ended Geometry http://onsemi.com 2 , EnhancementMode MOSFET ÍÍÍÍÍÍÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍÍÍÍÍÍÍ N+ N+ Figure 5. Channel Enhancement. Application of ... ON Semiconductor
Original
datasheet

16 pages,
134.61 Kb

mpf102 replacement depletion mode fet MPF102 n-channel equivalent to MPF102 Transistors 2N4221 P-Channel Depletion Mode FET jfet idss 10 vp -6 MFE2012 MPF102 Transistor MPF102 circuit application 2N5458 equivalent mpf102 application note AN211A/D mpf102 fet AN211A/D 2N3797 equivalent AN211A/D 2N4351 AN211A/D 2N3797 AN211A/D AN211A AN211A/D MPF102 equivalent transistor AN211A/D MPF102 JFET AN211A/D AN211A/D AN211A/D TEXT
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Abstract: necessary to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , incorporated 6-10 Junction FET Capacitances Associated with the junction between the gate and the channel of a , enhancement or depletion modes, and exist as both N- and P-Channel devices. The two main FET groups depend on , a reverse-biased PN junction formed along the channel. Implicit in this description is the fundamental difference between FET and bipolar devices: when the FET junction is reverse-biased the gate ... OCR Scan
datasheet

11 pages,
625.09 Kb

2N3823 equivalent 2N3823 replace An Introduction to FETs "Junction FETs, JFETs" MOSFET RF P-channel VHF p channel depletion mode mosfet ic P-Channel Depletion Mosfet 2N2606 2N3329 2N3823 P-Channel Depletion Mosfets E202 depletion mode mosfet 100 MHz DEPLETION MOSFET Junction FETs JFETs 2N3631 FET E202 P-Channel Depletion-Mode P-Channel Depletion Mode FET TEXT
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Abstract: dual-phase, single output regulator. The output of each channel can be independently adjusted from 1.3V to , response to fast load transients. Current is sensed across either the Vds of the top FET or across an external currentsense resistor connected in series with the drain of the top FET. The LM5642 LM5642 features , soft-start behavior more predictable and controllable than traditional soft-start circuits. n n n n n , off time for the IC during an output under-voltage event. n n n n n n n n n n n n n n ... National Semiconductor
Original
datasheet

28 pages,
1046.05 Kb

TSSOP-28 C5750X7R1H106M LM5642 LM5642MTC LM5642X LM5642XMT Si4850EY AN-1229 LM5642/LM5642X TEXT
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Archived Files

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No abstract text available
/download/61838263-169553ZC/smartsip.zip ()
Infineon 07/09/2000 95.72 Kb ZIP smartsip.zip
No abstract text available
/download/21000898-169550ZC/simosip.zip ()
Infineon 19/02/2000 33.13 Kb ZIP simosip.zip
; ! bias breakdown voltage( gate-drain junction) IS: 6.44183e-13 ; ! gate junction reverse saturation current( diode model) N: 1.13546 ; ! gate junction ideality factor (diode model 4mm-Fet from HP 127/3 T421A11 T421A11 CLY5 Chip ! measure date is 31.08.94-01.09.94 by Mr. Holz ! on capacitance TAU: 14.2312pS ; ! transit time under gate RIN: 1.92318 ; ! channel gate-source junction capacitance CGDO: 0.41594pF ; ! zero bias gate-drain junction capacitance
/datasheets/files/infineon/ehdata/nl_gaas/cly5/statz_4v.mod
Infineon 23/07/1997 2.14 Kb MOD statz_4v.mod
; ! bias breakdown voltage( gate-drain junction) IS: 6.44183e-13 ; ! gate junction reverse saturation current( diode model) N: 1.13546 ; ! gate junction ideality factor (diode model 4mm-Fet from HP 127/3 T421A11 T421A11 CLY5 Chip ! measure date is 31.08.94-01.09.94 by Mr. Holz ! on capacitance TAU: 14.5687pS ; ! transit time under gate RIN: 1.25429 ; ! channel gate-source junction capacitance CGDO: 0.262905pF ; ! zero bias gate-drain junction capacitance
/datasheets/files/infineon/ehdata/nl_gaas/cly5/statz_8v.mod
Infineon 23/07/1997 2.14 Kb MOD statz_8v.mod
No abstract text available
/download/19281888-169556ZC/transsip.zip ()
Infineon 07/09/2000 92.95 Kb ZIP transsip.zip
No abstract text available
/download/95257431-169543ZC/powersip.zip ()
Infineon 07/09/2000 242.21 Kb ZIP powersip.zip
be used without degrading accuracy. P-channel junction FET's are combined with bipolar devices in National P/N LF398 LF398 - Monolithic Sample and Hold Circuit [Information as of 1-Apr-98] LF398 LF398 Monolithic Sample and Hold Circuit Generic P/N 398 Contents Full production N/A N/A . Catalog Order 1000-2499 $1.7500 tube of 55 [logo][asm][date-code(yw)][die-run(2)] LF398M LF398M LF398MX LF398MX Commercial SOIC 14 Full production N/A N/A .
/datasheets/files/national/docs/wcd00004/wcd00479.htm
National 03/04/1998 14.64 Kb HTM wcd00479.htm
No abstract text available
/download/36135405-169521ZC/fettrans.zip ()
Infineon 07/09/2000 38.22 Kb ZIP fettrans.zip
; both are distributed along the channel of the switching FET. For calculating actual bandwidths, these drain-to-source channel currents. Moreover, a voltage-controlled MOSFET is free of the error caused by effect of dc control voltage on the signal channel. A single n-channel or p-channel enhancement-mode , and an n-channel device in series, you can implement a switch channel that turns off automatically either device type alone (p or n) is a strong function of the gate-source bias. But connecting the
/datasheets/files/maxim/0008/view_036.htm
Maxim 04/04/2001 33.99 Kb HTM view_036.htm
P-channel junction FET's are combined with bipolar devices in the output amplifier to give droop rates as Monolithic Sample and Hold Circuit Generic P/N 398 General Description Features IBIS Qty $US each LF398M LF398M SOIC NARROW 14 Status Full production N/A N/A Status Full production N/A N/A   1K+ $0.80 reel of 2500 NSUZXYTT LF398M LF398M 6-8 weeks 50000 LF398AN LF398AN MDIP 8 Status Full production N/A N/A 1K+ $1.48
/datasheets/files/national/lf398.htm
National 27/02/2004 22.34 Kb HTM lf398.htm