NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 1000V, 4.3A, 3.500 RF1S630SM RF1S630SM 200V, 9A, 0.400 0A TO 10A S E M I C O N D U C TO R 3.500 , , P-Channel, 30V, Surface Mount MOSFET CURRENT RATING 1 = 1A, 10 = 10A, 25 = 25A, etc. PACKAGE , X ITALICS = Future Offerings (2nd Quarter FY '97) EXAMPLE: IRFR214 IRFR214 - D-PAK, N Channel, 250V , N P P N N N CHANNEL N N CHANNEL N N N N N N CHANNEL , N CHANNEL N N N N N N N N P N N N P P N N N ... | Original |
8 pages, |
RF1K49093 MOSFET 1000v 30a IRF P CHANNEL MOSFET 10a MOSFET N 30V 30A 252 mosfet p channel irf IRF P CHANNEL MOSFET TO-252 n channel mosfet LOGIC 100v 70A p channel mosfet LOGIC 100v 70A P-channel 200V mos fet IRF P-Channel FET 100v IRF P CHANNEL MOSFET D-PAK IRF P CHANNEL MOSFET 100v datasheet abstract |
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| Abstract: MOSFET MODULE SF100CB100 SF100CB100 UL;E76102 E76102 M SF100CB100 SF100CB100 is a isolated power MOSFET module designed , electrically isolated from semiconductor elements for simple heatsink construction. ID 100A, VDSS 1000V , Reverse Drain Current A 100 A PT Total Power Dissipation Tj Channel Temperature 40 , A.C. 1minute 2500 V Recommended Value 2.5 3.9 25 40 4.7 48 N m kgf B Recommended , Forward Transconductance VDS 10A VD 75A Input Capacitance VGS 0V VDS 25V f 1.0MHz 16000 ... | Original |
3 pages, |
"MOSFET Module" "VDSS 800V" mosfet mosfet 100A mosfet 400a mosfet Vds 30 Vgs 25 SF100CB100 100A Mosfet MOSFET IGSS 100A MOSFET 20V 100A POWER MOSFET Rise Time 1000V NS mosfet vgs 5v N CHANNEL MOSFET 10A 1000V SF100CB100 abstract |
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| Abstract: drives two N channel MOSFETs, which feed the two halves of the power transformer's primary (T1). The , 3.3V Q1, 2 SUD19N20-90 SUD19N20-90 FET, N Channel, Vishay 200V, 19A J1-3 651-1727010 Dual , · Output current: 0 to 10A · Measured efficiency: 82% (at 48V in, 10A Load Current) · Board size: 2.4 x 2.4 x 0.5 inches · Load regulation: ± 1.0% (1 - 10A) · Line regulation: ± 0.15% (36 - 75V) · , COMP pin, the smaller the MOSFET duty cycle. Current in the main transformer's primary is monitored ... | Original |
11 pages, |
smd 301 C0805C472K5RAC FET N CHANNEL LM3411 LM5030 LM5030 datasheet LM5030EVAL N CHANNEL MOSFET 10A 1000V AN-1305 CRCW12061002F LM5030 abstract |
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| Abstract: charges CDS and Cdg in the MOSFET. This means that the channel loss can be reduced by making -io large. , the channel of the power MOSFET is dissipated in two ways: by a heat sink and by the device itself. , Tch : Channel temperature Rthch-c: Thermal resistance between channel and case (MOSFET thermal , \ I POWER MOSFET APPLICATION NOTES i Typical power MOSFET applications I 700- 800 900- , power MOSFET has a positive temperature coefficient which is self-compensating for current imbalance. ... | OCR Scan |
20 pages, |
40A GTO thyristor 2SK724 welder FERRITE TRANSFORMER design arc welder inverter 83-004 diode AC180 1000v 200w Transistor era91-02 equivalent transistor 2SK1082 EAA91 ultrasonic humidifier driver circuit 2SK962 equivalent ER038-06 datasheet abstract |
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| Abstract: up to 500kHz fOSC (max) max per channel +/- 1A drive current capability optimized for low charge Deadtime MOSFETs HO/LO Pulse Matching Adjustable dead-time 50ns 200ns Floating channel designed for , Management Converters Half-Bridge 100 V 1.0A & 1.0A 500kHz 50ns 200ns +/- 25ns 8 - Lead SOIC , input voltage. Each channel frequency is equal to fOSC, which can be set by selecting RT & CT, where , ) Class M2 (+/-200V /-200V) (per AEC-Q100-003 AEC-Q100-003) Class H1B (+/-1750V /-1750V) (per AEC-Q100-002 AEC-Q100-002) Class C4 (+/-1000V ... | Original |
16 pages, |
N CHANNEL MOSFET 10A 1000V CS 13001 AUIR2085S AEC-Q100-002 4015 IC circuit diagram AEC-Q100 AUIR2085S abstract |
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| Abstract: Speed Silicon Controlled Rectifiers N Channel MOSFET's 500V and 1000V Outperforms Conventional SMT , possible footprint. The current portfolio includes: · · · · · · · · 1A through 10A Schottky , Powermite 3 Mosfet (N-channel) Schottkys Quality/Reliability Data Cross Reference 2 2 3 4 5 6 , MATTE-TIN J K F DIM A B C D E F G H J K L M N O P MIN MAX 1.73 1.73 1.73 , N O L P M Pad Layout 7 ¤ Powermite 3: Small Size, Greater Power Actual ... | Original |
12 pages, |
SCHOTTKY DIODES CROSS REFERENCE 200V AUTOMOTIVE MOSFET Mosfet n-channel Cross Reference sot Cross Reference sot23 5W zener diode UPS1040 powermite 3W ZENER cross reference zener diodes 1A 200V SCR die zener 400v datasheet abstract |
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| Abstract: AUTOMOTIVE GRADE PD - 97647 AUIRF9952Q AUIRF9952Q HEXFET® Power MOSFET Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating , /- 150V) , Q2(P) = H0 (+/- 150V) AEC-Q101-001 AEC-Q101-001 ESD Class Q1(N) = C4 (+/- 1000V) , Q2(P) = , Lead-Free, RoHS Compliant Automotive Qualified* S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-CH P-CH V(BR)DSS RDS(on) max. ID 30V 3.5A -30V -2.3A 0.10 0.25 6 5 P-CHANNEL MOSFET ... | Original |
13 pages, |
auirf9952q 1000V P-channel MOSFET AUIRF9952Q AUIRF9952Q abstract |
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| Abstract: /N)+Vout . Figure 4: Minimum breakdown voltage ratings required for the power MOSFET (mode 1 , of (Vin max/N)-Vout. In practice, a Power MOSFET with a 50V breakdown voltage is enough for both 5V , and the poor regulation output pe r f or ma nc e ( o pe n lo a d) h a s o ft e n restricted the use , switch gives excellent load regu latio n perf orman ce. Co ntro l and protection functions such as over current limiting, short-circuit shutdown, remote on/off, etc. are easily implemented in a s e m ic o n ... | Original |
14 pages, |
c mos version of uc3845 AN UC3845 L497XA L78XX magnetic amplifier saturable core off-line flyback regulator uc3845 UC3845 smps design STH80N05FI uc3845 application smps designing an offline Half-Bridge SMPS flyback cross reference flyback smps uc3845 datasheet abstract |
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| Abstract: (Figure 3). As the MOSFET channel stops conducting, electron current ceases and the IGBT current drops , of transconductance occurs when the saturation effects in the MOSFET channel, that reduce the base , MOSFET channel current more than it increases the gain of the PNP, the saturation in transconductance , Application Note AN-983 AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET , ) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit ... | Original |
17 pages, |
what is fast IGBT transistor AN-983 BUX98 C50U INT-990 ir igbt IRF P CHANNEL MOSFET 10A 100V IRF840 IRGBC20U irgbc20u Similar IRGBC40S TRANSISTOR mosfet IRF840 sec irf840 AN-983 abstract |
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| Abstract: (Figure 3). As the MOSFET channel stops conducting, electron current ceases and the IGBT current drops , of transconductance occurs when the saturation effects in the MOSFET channel, that reduce the base , MOSFET channel current more than it increases the gain of the PNP, the saturation in transconductance , Application Note AN-983 AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET , ) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit ... | Original |
16 pages, |
1000C AN-983 BUX98 C50U INT-990 IRF840 IRGBC20U IRGBC40S IRGBC40U IGBT loss calculate Equivalent transistors for IRGPC50U AN-983 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| N-CHANNEL 10A - 600V - D2PAK LOGIC LEVEL IGBT 8 387 Datasheets STP3NB100 STP3NB100 STP3NB100 STP3NB100 STP3NB100FP STP3NB100FP STP3NB100FP STP3NB100FP N-CHANNEL 1000V - 5.3 OHM - 3A - TO-220/TO-220FP POWERMESH MOSFET 8 387 Datasheets STB10NB20 STB10NB20 STB10NB20 STB10NB20 N-CHANNEL 200V - 0.30 OHM - 10A - D2PAK POWERMESH MOSFET 8 387 387 Datasheets STU7NB100 STU7NB100 STU7NB100 STU7NB100 N-CHANNEL 1000V - 1.2 OHM - 7.3A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET TRANSISTOR 9 387 Datasheets STP4NB100 STP4NB100 STP4NB100 STP4NB100 STP4NB100FP STP4NB100FP STP4NB100FP STP4NB100FP N-CHANNEL 1000V - 4 OHM - 3.8A www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/765.htm |
STMicroelectronics | 31/03/1999 | 16.83 Kb | HTM | 765.htm |
| 904 Datasheets STW18NB40 STW18NB40 STW18NB40 STW18NB40 N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET 8 904 Datasheets STW10NB60 STW10NB60 STW10NB60 STW10NB60 N-CHANNEL 600V - 0.69 OHM - 10A - TO-247 POWERMESH MOSFET 8 809 Datasheets STW8NB100 STW8NB100 STW8NB100 STW8NB100 N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET 7 OHM - 0.2A - SOT-223 POWERMESH MOSFET 7 952 Datasheets STD1NB80-1 STD1NB80-1 STD1NB80-1 STD1NB80-1 N-CHANNEL 8 904 Datasheets STW13NB60 STW13NB60 STW13NB60 STW13NB60 N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET 8 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/257.htm |
STMicroelectronics | 31/03/1999 | 25.75 Kb | HTM | 257.htm |
| Datasheets STW10NB60 STW10NB60 STW10NB60 STW10NB60 N-CHANNEL 600V - 0.69 OHM - 10A - TO-247 POWERMESH MOSFET 8 809 Datasheets STW8NB100 STW8NB100 STW8NB100 STW8NB100 N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET 7 ENHANCEMENT MODE POWERMESH MOSFET 9 1000 Datasheets STY34NB50 STY34NB50 STY34NB50 STY34NB50 N- CHANNEL 500 V - 0.11 OHM - 34 A - MAX247 MAX247 MAX247 MAX247 POWERMESH MOSFET 8 1000 Datasheets STB4NB50 STB4NB50 STB4NB50 STB4NB50 N-CHANNEL 500 8 904 Datasheets STW13NB60 STW13NB60 STW13NB60 STW13NB60 N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET 8 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/243.htm |
STMicroelectronics | 31/03/1999 | 25.12 Kb | HTM | 243.htm |
| MSAFX10N100A (#17863) N Channel MOSFET Division Santa Ana Drain-to-Source B VDSS 1000 V Drain Current (Continuous) I D 10 A D =10 A) V SD 1.5 V www.datasheetarchive.com/files/microsemi/products/17863.htm |
Microsemi | 08/12/1999 | 14.51 Kb | HTM | 17863.htm |
| N-CHANNEL 1000V - 0.35 OHM - 24A - ISOTOP FAST POWER MOSFET 8 809 Datasheets VNP "OMNIFET" FULLY AUTOPROTECTED POWER MOSFET 10 714 Datasheets STE110NA20 STE110NA20 STE110NA20 STE110NA20 N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET 8 714 Datasheets STE53NA50 STE53NA50 STE53NA50 STE53NA50 N-CHANNEL ENHANCEMENT Part Number(s) Description Size (kb) 1000 Datasheets STP50N06 STP50N06FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 9 952 Datasheets STP50N06L STP50N06LFI N-CHANNEL www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/214.htm |
STMicroelectronics | 31/03/1999 | 16.58 Kb | HTM | 214.htm |
| 400V - 0.48 OHM - 10A - TO-220 POWERMESH MOSFET | Index | IRF740S IRF740S IRF740S IRF740S - N-CHANNEL 400V - 0.48 OHM - 10A - D2PAK POWERMESH MOSFET | Index | IRF820 IRF820 IRF820 IRF820 - N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 200V - 0.30 OHM - 10A - D2PAK POWERMESH MOSFET | Index | STB10NB50 STB10NB50 STB10NB50 STB10NB50 - N-CHANNEL 500V - 0.55 OHM .18 OHM - 10A TO-252 STRIPFET POWER MOSFET | Index | STD12N05 - N-CHANNEL ENHANCEMENT MODE POWER | STE24NA100 STE24NA100 STE24NA100 STE24NA100 - N-CHANNEL 1000V - 0.35 OHM - 24A - ISOTOP FAST POWER MOSFET | Index | STE26NA90 STE26NA90 STE26NA90 STE26NA90 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/pdf/menu/08010200-v1.htm |
STMicroelectronics | 14/06/1999 | 114.31 Kb | HTM | 08010200-v1.htm |
| 400V - 0.48 OHM - 10A - TO-220 POWERMESH MOSFET | Index | IRF740S IRF740S IRF740S IRF740S - N-CHANNEL 400V - 0.48 OHM - 10A - D2PAK POWERMESH MOSFET | Index | IRF820 IRF820 IRF820 IRF820 - N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 200V - 0.30 OHM - 10A - D2PAK POWERMESH MOSFET | Index | STB10NB50 STB10NB50 STB10NB50 STB10NB50 - N-CHANNEL 500V - 0.55 OHM 1000V - 0.35 OHM - 24A - ISOTOP FAST POWER MOSFET | Index | STE26NA90 STE26NA90 STE26NA90 STE26NA90 - N-CHANNEL 900V - 0 | Index | STP3NB100 STP3NB100 STP3NB100 STP3NB100 - N-CHANNEL 1000V - 5.3 OHM - 3A - TO-220/TO-220FP POWERMESH MOSFET | Index www.datasheetarchive.com/files/stmicroelectronics/stonline/books/pdf/menu/07010200.htm |
STMicroelectronics | 07/04/1999 | 109.81 Kb | HTM | 07010200.htm |
| N-CHANNEL 400V - 0.48 OHM - 10A - TO-220 POWERMESH MOSFET IRF740S IRF740S IRF740S IRF740S N-CHANNEL 400V - 0.48 OHM - 10A - D2PAK POWERMESH MOSFET IRF820 IRF820 IRF820 IRF820 .30 OHM - 10A - D2PAK POWERMESH MOSFET STB10NB50 STB10NB50 STB10NB50 STB10NB50 N-CHANNEL 500V - 0 .48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET STB10NC50-1 STB10NC50-1 STB10NC50-1 STB10NC50-1 N-CHANNEL STE24NA100 STE24NA100 STE24NA100 STE24NA100 N-CHANNEL 1000V - 0.35 OHM - 24A - ISOTOP FAST POWER MOSFET www.datasheetarchive.com/files/stmicroelectronics/stonline/books/toc/ds/192.htm |
STMicroelectronics | 20/10/2000 | 468.31 Kb | HTM | 192.htm |
| .48 OHM - 10A - TO-220 POWERMESH MOSFET IRF740S IRF740S IRF740S IRF740S N-CHANNEL 400V - 0.48 OHM - 10A STB10NC50 STB10NC50 STB10NC50 STB10NC50 N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET STB10NC50-1 STB10NC50-1 STB10NC50-1 STB10NC50-1 N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET STE24NA100 STE24NA100 STE24NA100 STE24NA100 N-CHANNEL 1000V - 0.35 OHM - 24A - ISOTOP FAST POWER MOSFET STE - 10A - TO-220/TO-220FP POWERMESH MOSFET STP11NB40 STP11NB40 STP11NB40 STP11NB40 STP11NB40FP STP11NB40FP STP11NB40FP STP11NB40FP N-CHANNEL www.datasheetarchive.com/files/stmicroelectronics/stonline/books/toc/ds/192-v1.htm |
STMicroelectronics | 02/02/2001 | 506.01 Kb | HTM | 192-v1.htm |
| .60 A LL n-channel enh. SO-8 84 K 09.97 BSO 615 NV 60 V 0.12 Ohm 3.10 A depl. SOT 223 480 K 09.96 BSP 135 600 V 60.0 Ohm 0.10 A LL n-channel 92 73 K 05.97 BSS 125 600 V 45.00 Ohm 0.10 A LL n-channel enh. TO 92 282 K 04.97 BSS 131 240 V 16.00 Ohm 0.10 A LL n-channel enh. SOT 23 TO 220 70 K 11.97 BUZ 101 SL-4 55 V 0.075 Ohm 4.10 A LL n-channel SO www.datasheetarchive.com/files/siemens/products/36/3611.htm |
Siemens | 27/02/1998 | 58.13 Kb | HTM | 3611.htm |