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Motorola CMOS Dynamic RAM 1M x 1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MCM32515 128K x 32 20/25 ns Now 64 Pin SIMM (SG) Uses four 1M SRAMs MCM32128A Motorola , Memory 62 = 5 V CMOS 63 = 3.3 V CMOS 67 = 5 V BiCMOS 69 = 3.3 V BiCMOS Density: 0 = 256K 2 = 1M , = First qualified foundry device Width: 5=x9 6=x8 7=x1 8=x4 9 = x 4 with OE Motorola , a CMOS 16K x 16 and NOT a 512K x 90 device. MPC designates devices designed to work with PowerPC , Packaging PowerPC Cache Modules with 16K x 15 CacheTag Motorola MPC105, Motorola MPC106 Motorola
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MCM91430 Motorola CMOS Dynamic RAM 1M TSOP 400 86 MCM511000A mcm511000 Motorola CMOS Dynamic RAM 16m x 32 MCM517405C MCM518160A MCM518160B MCM518165B MCM518165BV MCM44400C
Abstract: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM81000 1M x 8 Bit Dynamic Random Access Module The MCM81000 is an 8M dynamic random access memory (DRAM) module organized as 1,048,576 x 8 bits. The module is , along with a 0.22 nF (min) decoupling capacitor mounted under each DRAM. The MCM511000A is a 1 .On CMOS high speed, dynamic random access memory organized as 1,048,576 one-bit words and fab ricated with CMOS , fast successive data operations at all 2048 column locations on a selected row of the 1M dynamic RAM -
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MCM81000S MCM81430S MCM81000-70 MCM81000-80 MCM81000AS MCM81000L MCM81000LH
Abstract: m v s i v i ìv L n SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module The MCM81000 and MCM8L1000 are 8M dynamic random access memory (DRAM) modules organized as 1,048,576 x 8 bits , CMOS high speed, dynamic random access memory organized as 1,048,576 one-bit words and fabricated with , selected row of the 1M dynamic RAM. Read access time in page mode (tCAC)is typically half the regular RAS , 1M x 8 Modules are Available in Two-Chip Versions (MCM81430S) · · · · · · · · MCM81000 MCM8L1000 -
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MCM8 MCM81OOOS MCM810 8L1000 MCM81000AS70 MCM81000AS80 MCM8L1000AS70
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 and MCM9L1000 are 9M dynamic random access memory (DRAM) modules organized as 1,048,576 x 9 bits , .On CMOS high-speed dynamic random access memory organized as 1,048,576 one-bit words and fabri cated with , _ For Applications Requiring W to be Don't Care during CAS-Before-RAS Refresh Cycles 1M x 9 Modules , dynamic nodes within the RAM. During an extended inactive state (greater than 8 milliseconds with the -
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MCM91000-70 MCM91000SG motorola mcm91000s MCM91000-80 MCM91000AS 9L1000 MCM91000L70 MCM91000L80
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory (DRAM) module or ganized as 1,048,576 x 9 bits. The , ^ CMOS high-speed dynamic random access memory organized as 1,048,576 one-bit words and fabricated with , at all 2048 column locations on a selected row of the 1M dynamic RAM. Read access time in page mode , CAS-Before-RAS Refresh Cycles · 1M x 9 Modules are also Available in 3-Chip Versions (See Data Sheet for MCM91430 -
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91000LH70 mcm91000s MCM91000S 91000LH80 91000S70 91000S80 91000AS70
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM411000 MCM41L1000 1M x 1 CMOS Dynamic RAM Page Mode The MCM411000 is a 1.On CMOS high-speed dynamic random access memory. It is organized as 1,048 , of the 1M dynamic RAM. Read access time in page mode (tCAC) ¡s typically half the regular RAS , NC 1? 13 18 A3 [ MOTOROLA DRAM DATA NC AO Vr r W 7 9 PIN ASSIGNMENTS , addressing the 1M RAM: RAS-only refresh cycle and CAS before RAS refresh cycle. Both are discussed in -
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MCM411000-80 MCM411000J70 MCM411000J-70 707B-01 822B-01 MCM411000-70 MCM41L1000-70 MCM41L1000-80
Abstract: CMOS 1M x 1 DRAMs housed in 20/26 lead SOJ packages, mounted on a substrate along with a 0.22 |iF (min) decoupling capacitor mounted under each DRAM. The MCM514400 is a CMOS high speed, dynamic random access , the regular RAS clock access (tRAC)on the Motorola 1M dynamic RAM. Page mode operation consists of , , Eight 1M x 1 DRAMs, and Twenty Four 0.22 |iF (Min) Decoupling Capacitors â'¢ Unlatched Data Out at , Ã"0V 2 7 1990 MOTOROLA SEMICONDUCTOR wamâ'"mâ'"m^mm TECHNICAL DATA Product Preview 2M x 36 -
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MCM36200 MCM36L200 Nippon capacitors MCM36200S MCM36L200S MCM36200S-80 MCM36200S-10 MCM36L2
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 1 CMOS Dynamic RAM Page Mode, Commercial and Industriai Temperature Range The MCM511000A is a 1.0^ CMOS high-speed dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CMOS siiicon-gate process technology. Advanced , fast successive data operations at all 2048 column locations on a selected row of the 1M dynamic RAM , . PF MOTOROLA DRAM M C M 5 1 1 0 0 0 A .M C M 5 1 L1000A 2-5 AC OPERATING CONDITIONS AND -
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MCM511000A-70 MCM511000A-80 MCM511000AJ70 MCM511000AJ80 MCM51L1000AJ70 511000A 511000a-80 MCM51L1000A MCM51L1000A-70 MCM51L1OO0A-8O MCM51L1OOOA-80
Abstract: packages and four CMOS 1M x 1 DRAMs housed in 20/26 lead SOJ packages, mounted on a substrate along with a , , dynamic random access memory organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate , '¢ Consists of Sixteen 1M x 4 DRAMs, Eight 1M x 1 DRAMs, and Twenty Four 0.22 n.F (Min) Decoupling Capacitors , 1M dynamic RAM. Page mode operation consists of holding the RAS clock active while cycling the CAS , NOV 1 2 1990 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Order this data sheet by MCM36200/D -
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30 pin 9-bit simm memory NP515 36L200 MCM36200S70 MCM36200SG70 MCM36200S80- MCM36200SG80 MCM36200S10
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory (DRAM) module orga nized as 1,048,576 x 9 bits. The , ) decoupling capacitor mounted adjacent to each DRAM. The MCM54400AN is a CMOS high-speed dynamic random access memory organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate process technology. · , ) MCM91430 5-70 MOTOROLA DRAM CAS BEFORE R Ä § REFRESH COUNTER TEST CYCLE M O TO R O LA D RAM -
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MCM91430-60 MCM91430-70 MCM91430S MCM91430L MCM91430SC 30-PIN
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36100R8 Product Preview 1M x 36 Bit Dynamic Random , ,576 x 36 bits. The card is a JEDEC-standard Type 1, 88-pin DRAM card, consisting of eight low power MCM5L4400A DRAMs, mounted on a thin sub strate along with four 1M x 1 TSOP parity DRAMs, decoupling , Eight 1M x 4 DRAMs, Four 1M x 1 DRAMs, 0.22 |iF (Min) Decoupling Capacitors, and Input Buffers · F a s t , industry standard. The MCM5L4400A is a low power 0.7n CMOS high speed, dynamic random access memory -
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MCM36100R8-70 MCM36100R8-60 36100R860 36100R870
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit Dynamic Random Access Memory Module The MCM36100 is a 36M dynamic random access memory (DRAM) module organized as 1,048,576 x36 bits. The module is , 300 mil SOJ packages and four CMOS 1M x 1 DRAMs housed in 20/26 lead SOJ packages, mounted on a , high-speed dynamic random access memory organized as 1,048,576 four-bit words and fabricated with CMOS , Cycle Refresh: 16 ms (Max) Consists of Eight 1M x 4 DRAMs, Four 1M x 1 DRAMs, and Twelve 0.22 pF (Min -
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MC 5179 MCM36100 DRAM SIMM MCM54400A MCM36100-60 MCM36100-70 MCM36100ASH MCM36100AS6O MCM361OOAS70
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-V Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode, 3.3 V Power Supply The M CM 54400A-V is a 0.7y CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fou r-b it words and fabricated with CMOS sili con- gate , fast successive data operations at all 1024 colum n locations on a selected row of the 1M x 4 dynamic , tice . REV 1 10/95 MOTOROLA DRAM MCM54400A-V 2-145 ABSOLUTE MAXIMUM RATINGS (See Note -
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CM54400A-V80 MCM54400A-V80 MCM54400ANV80 MCM54400ANV80R2 MCM54400ATV80 MCM54400ATV80R2
Abstract: TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 and MCM9L1430 are 9M dynamic random access memory (DRAM) modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in , adjacent to each DRAM. The MCM54400AN is a CMOS high-speed dynamic random access memory organized as 1,048 , - " @ -v a u d d a t a:@ >~K X X X X X X X MOTOROLA DRAM DATA MCM91430*MCM9L1430 5-83 M O TO , , coincident with or fol lowing CAS inactive transition. REFRESH CYCLES The dynamic RAM design is based on -
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91430 MCM91430-80 9L1430 MCM91430L60 MCM91430L70 MCM91430L80 MCM9L1430L60
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM18200R8 Product Preview 2M x 18 Bit Dynamic Random Access Memory Card The MCM18200R8 is a 5 V DRAM Memory Card organized as two banks of 1,046,576 x 18 , DRAMs, mounted on a thin substrate along with four 1M x 1 TSOP parity DRAMs, decoupling capacitors, and , . The MCM5L4400A is a low power 0.7|j CMOS high speed, dynamic random access memory organized as 1,048 , , Four 1M x 1 DRAMs, 0.22 |iF (Min) Decoupling Capacitors, and Input Buffers « Fast Access Time (tRAC -
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MCM18200R8-60 MCM18200R8-70 MCM18200R860 MCM18200R870
Abstract: Technology Ð Reduces system costs / needs less memory u MOTOROLA Semiconductor Products Sector 1 , Frames 81 MCF5200 93 893 3 1 1Implemented Mnemonics x Addressing modes x Operand sizes , O N T R O L C Operand Exec Pipeline w Technology Ð 0.42um TLM CMOS u MOTOROLA , 2Q97 * Dhrystone 1.1 MIPS using Diab 3.6f compiler u MOTOROLA Semiconductor Products Sector 1 , * Dhrystone 1.1 MIPS using Diab 3.6f compiler u MOTOROLA Semiconductor Products Sector 1/97 25 Motorola
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MCF5267 motorola 68020 instruction set motorola 68020 manual XCF5102 68EC030 motorola ColdFire v5 68EC030 MC680 MPC60 MC683 100MH 140MH 68020/CPU32
Abstract: MOTOROLA SC (MEI10RY/ASIC ) SflE D fc>3b7251 Üfl77c 14 1 T 3 IM0T3 r MOTOROLA t rtA riim a m Order this documemby MCM511000A/D " SEMICONDUCTOR TECHNICAL DATA 1M x 1 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The MCM511000A is a 1.0|i CMOS high-speed dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated , locations on a selected row of the 1M dynamic RAM. Read access time in page mode (t C A C ) 's typically -
OCR Scan
MCM511000AP70 MCM511000AP80 MCM511 mcm511000aj MCM511000AZ80 MCM51L1000A-80 1ATX23025-3
Abstract: Information MCM44400B MCM4L4400B 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400B is a 0.8u CMOS high­speed dynamic random access memory. It is organized as 1,048,576 four­bit words and fabricated with , 1M x 4 dynamic RAM. Read access time in page mode (tCAC) is typically half the regular RAS clock , variations in addressing the 1M x 4 RAM: RAS­only refresh cycle, CAS before RAS refresh cycle, and page , . Specifications and information herein are subject to change without notice. REV 1 10/95 © Motorola, Inc Motorola
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MCM44400BN70 822B MCM44400BN60 MCM44400BN80 MCM4L4400BN60 MCM44400B/D
Abstract: Information MCM44400C MCM4L4400C 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400C is a 0.8u CMOS high­speed dynamic random access memory. It is organized as 1,048,576 four­bit words and fabricated with , all 1024 column locations on a selected row of the 1M x 4 dynamic RAM. Read access time in page mode , generating the CAS clock. There are three other variations in addressing the 1M x 4 RAM: RAS­only refresh , MOTOROLA DRAM MCM44400C·MCM4L4400C 1 BLOCK DIAGRAM DQ0 ­ DQ3 W DATA IN BUFFER RAS Motorola
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MCM44400CN60 MCM44400CN70 ASC CAPACITOR MCM44400CN80 MCM4L4400CN60 MCM44400C/D
Abstract: Information MCM64400B MCM6L4400B 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM64400B is a 0.65u CMOS high­speed dynamic random access memory. It is organized as 1,048,576 four­bit words and fabricated with , column locations on a selected row of the 1M x 4 dynamic RAM. Read access time in page mode (tCAC) is , generating the CAS clock. There are three other variations in addressing the 1M x 4 RAM: RAS­only refresh , without notice. 7/96 © Motorola, Inc. 1996 MOTOROLA DRAM MCM64400B·MCM6L4400B 1 BLOCK Motorola
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K6010 MCM64400BN50 MCM64400BN60 MCM64400BN70 MCM6L4400BN50 MCM64400B/D MCM6L400B
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