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HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6605IRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609ACRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
HIP2100EIB Intersil Corporation 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8 visit Intersil

Mosfet FTR 03-E

Catalog Datasheet MFG & Type PDF Document Tags

Mosfet FTR 03-E

Abstract: mt 1389 fe 250 Max 600 600 600 600 V c e (V) 5 5 5 5 lc(mA) 1 1 1 1 Package FTR FTL ATR ATV Page 1344 1344 , 300 300 300 5668686868685 5 5 5 5 5 lc(mA) 5 5 5 5 5 5 ATV SPT FTR FTL ATR ATV i-nm Vc e o (V) lc , r s S u m m a ry · POWER MOSFET Part No 2SK1976 2SK2095 2SK2176 Switching Application V dss , -1 0 0 -1 0 0 -1 0 0 -1 0 0 -1 0 0 -1 FTR FTR ATR FTR TO-92 TO-92 SPT TO-92 SPT TO-92 SPT FTR ATR FTR TO-92 TO-92 SPT SPT TO-92L TO-92L TO-92 FTR FTR ATR ATR TO-92 TO-92 TO-92 TO-92 SPT TO-92 171 174 177
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Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs DTC143EF low noise Darlington Transistor 2SA785 2SA790 2SA790M 2SA806 2SA821 2SA825

C2021M

Abstract: B1568 Transistor Quick reference V ceo -Ic FTR n ^q e o[ V ] 11 15 19 20 25 31 ±4 32 , 2SC2021LJNE) 2SB821 / 2SA937ALN \2SC2021LN(RS) 2SB1276 2S C 2021M LN 4E ) 2SA937AM Package FTR FTL ATR ATV TO-92 Part No. / 2SB737 V 2SD786 2SA1137 2SC1740(E) 2SC1740U#E) SPT 2SD786S TO-92L TO-92LS MRT Low rbb' Head Amp 2SC17406(E) 2SC1740SLN® ( 2SA933A \2SC1740(QR , 2SC4775 2SC2021(E) 2SC4777 2SC4038(E) /2SA1561A V2SA4038IÛRS} 2SA15S4 2S81279 2S02169 2SC4776M
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2SC4034 2SA1819 2SC2673 B1568 4AC17 C2021M mosfet ftr 03 2SA1904 2SC1B15 2SC2021E 2SA933AS 2SA937AMLN 2SC2021MDW 2SA933ALN 2SA1039

2SC1740 transistor

Abstract: A1757 2SC2021LN(E) 2SB821 2SB1276 2SC2021MLN(E) Package FTR FTL ATR ATV TO-92 Part No. SPT TO-92L TO-92LS MRT Low rbb' Head Amp ( 2SB737 V2SD786 2SA1137 2SC1740(E) 2SC1740LN(E} 2SD786S 2SC1740S(E) 2SC1740SLN(E) 50 ( 2SA937ALN V2SC2021LN(RS) f 2SA937AMLN V 2SC2021MLN(RS , Package-Application Application (V) * * Mces , Cont'd to Package VC E O FTR 2SD1469 FTL 2SD1920 , 2SC2021(E) 2SC4777 2SC4038(E) 2SC4776M 2SC2021M(E) 2SC2021M (Q RS) 2SC4778 2SC401CHE) 2SA1547A 2SC401CHQRS
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V2SC1740LN 2SC1740 transistor A1757 2SD2061F B1130AM 2SD1466 2SC5083 2SA933ASLN 2SC2390 2SC2808 2SA1038 2SC2389

Mosfet FTR 03-E

Abstract: Mosfet FTR 03 2SK1507-01 MR N-:h a n n elsilic o n po w er m o s fet FUJI POWER MOS-FET _ , A A V W ·c o Drain (D) ¡T o I L à Source (S) "C · E ectrical Characteristics(Tc = 2 5 , Output capacitance R< verse transfer capacitance Turn-on time to n (ti n tC ](irj f-tr) Turn-off time tort (t , -217 1. ZO iJ9v'/ '±m , im , r - ? , W*4> tfïi£ 4 ii) láSÍSíOli^SM OjtÜ), É*;¿ft!
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Mosfet FTR 03-E

Abstract: FS7SM-12 MITSUBISHI Neh POWER MOSFET FS7SM-12 HIGH-SPEED SWITCHING USE FS7SM-12 OUTLINE DRAWING , °C - 4.8 g 2 - 350 MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS7SM , 2 - 351 MITSUBISHI Neh POWER MOSFET FS7SM-12 HIGH-SPEED SWITCHING USE ON-STATE , 200V ./GS = 10V S = bUi l Rgen = HG z « < o L U 5 C D 2 ÍC F tc f) i °
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Abstract: Transistors Small switching (60V, 5A) 2SK2503 â'¢F e a tu re s ©External dimensions (Units , use in parallel. â'¢S tru c tu re 0 .5 ± 0 .1 MOSFET transistor /If tfll (1) (2) (3 , characteristic curves 10 V o s = 1 0 V E= = P u ls e d / / - < o L 2 1 £ 0.5 U J C , = = = ZZ z z z: â'" = / = = : E E | r j 3 ir = = â'" = = = = Ã' â'" = = = = = 6 G ATE-SO URC E VO LTAG E : Vos (V ) Fig -
OCR Scan
SC-63 SC-43 SC-67 T0-220FP

Mosfet FTR 03-E

Abstract: Transistors Switching (500V, 10A) 2SK2714 â'¢ F e a tu re s âºExternal dim ensions (Units , ide SOA (safe operating area). 4) G a te -so u rce vo lta g e g u ara ntee d at V gss = ± 3 0 V . , Silicon N-channel (1) G ate (2) Drain (3) Source MOSFET transistor â'¢A b s o lu te m axim um , ^^ QDIbflDM b75 â  _ noHm 19 3 2SK2714 Transistors â'¢ E le c tric a l , IO Rise time > o I Yfs I* â'" > 0.7 5 3 P w S 3 0 0 )i s, Duty c y d e â l
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2N6849

Abstract: 2n6849 mosfet T0 -20 5A F BOTTOM VIEW Features m -b CCA 4 ftr · .5 A , -lU U tll V · rDS(on) = 0 .3 0 n · , V Vv w - DRAIN (CASE) D escription The 2 N 6 8 4 9 is an advanced pow er MOSFET designed , operation. This is a p-chann el enhancem ent mode s ilic o n -g a te po w e r fie ld -e ffe c t transistor , drivers, and drivers fo r h ig h -p o w e r bipolar sw itching transistors requiring high speed and low ga , (0.063" (1.6mm) from case tor 10s) NOTES: 'JE D E C registered values UNITS V V A A A
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2N6849 2n6849 mosfet 92CS-4329B 92CS-43320 92CS-43300 92CS-43307
Abstract: Transistors Small switching (1OOV, 5A) 2SK2504 â'¢ F e a tu re s â'¢E x te rn a l dim , N-channel MOSFET transistor iftl (1) (2) (3) ROHM : CPT3 Ã'IAJ : SC-63 1.Q±Q.2 (1) Gate (2 , ) 2SK2504 Taping TL 2500 0 O G lb ?^ RDHffl G23 127 2SK2504 Transistors â'¢ E le c , time Fall time * Pwâ300 ÃS, Duty cydeâl % â'¢ E le c tric a l characteristic curves , Transistors 2SK2504 â'¢ E le c tric a l characteristic curves 0j01 Q02 005 0.1 0.2 DRAIN C UR RENT -
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mosfet ftr 03

Abstract: Mosfet FTR 03-E 2 S K 1 9 1 6 - 0 1 R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S Features · High speed sw itching · L o w on-resistance · , Cleneral purpose p ow er amplifier JE D E C EIA J I Max. Ratings and Characteristics Absolute M axim , ) (unless otherw ise specified) Items E rain-source breakdown voltage G ate threshold voltage Zero gate voltage drain current C ate-source leakage current E rain-source on-state resistance Forward
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Mosfet FTR 03-E

Abstract: PLCC-20 & LCC-20 (Top View) Q & L Package 16 S o ft-R e f Nl 2 15 F a u lt INV 3 , o UC1861-1868 UC2861-2868 UC3861-3868 U N IT R D D E Resonant-Mode Power Supply , components' initial tolerances. 15 3Vâ'"C S o f t - R e f 16 F a u lt and L o g ic P re c is io n R e fe re n c e B ia s a nd 5 V Gen Nl 1 5V S lg Gnd INV UVLO E /A Out 13 V c c 4 Range R m ln VCO Cvco 8 Z ero 10 S te e rin g FET Shot L
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UC1865-1868 UC1861-1864 UC1862 UC1866
Abstract: Transistors Switching (450V, 7A) 2SK2299N â'¢ F e a tu re s â'¢E x te rn a l dim ensions , 4) G ate-source vo lta g e guaranteed at V gss= ± 3 0 V . 5) Easily designed drive circuits. 6) Easy to use in parallel. â'¢ S tru c tu re Silicon N-channel MOSFET transistor â'¢ A b s o lu te , characteristic curves DRAIN-SO URC E VO LTAG E : Vos (V ) Fig.1 Maximum Safe Operating Area Fig .2 , Transfer Characteristics Transistors 2SK2299N â'¢ E le c tric a l characteristic curves Ta=- 2 5 -
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Abstract: Transistors Small switching (500V, 2A) 2SK2715 â'¢F e a tu re s â'¢E x te rn a l dimensions , GDlbfiQfi S10 nH om 143 MOS FET â'¢S tru ctu re Silicon N-channel MOSFET transistor , Voltage 7 à E à C 1C â¡DlhÃlG 'W'i JC 1 n a H m Fig. 12 Switching Characteristics (See Figure ,   8i 1± 0 .8 ± 0.1 10 . 9 5 0 . 9 5 J3â'"@ â'"0_,_P d o= n a. llo*±8-k e , circuit board than the TO-92. Reliability is the same as the TO92. FTR SIL type with a height of 3.4 -
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Abstract: Transistors Switching (500V, 5A) 2SK2793 â'¢F e a tu re s â'¢E x te rn a l dim ensions , >.&t±0.5 MOSFET transistor ROHM : TO-220FN a 7 ° -0 .0 5 2 .6 ± 0 .5 (1) Gate (2) Drain (3 , 2SK2793 â'¢ E le c tric a l characteristics (Ta = 25°C) Parameter Gate leakage current Drain-source , /d t= 1 0 0 A / s Rise time Turn-off delay time Fall time â'¢ E le c tric a l characteristic curves D R A IN -SO U R C E V O LT A G E : V ds (V) Fig.1 Maximum Safe Operating Area Fig -
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Abstract: Transistors Switching (450V, 5A) 2SK2713 â'¢ F e a tu re s â'¢E x te rn a l dim ensions , 4) G a te -so u rce vo lta g e gu a ra n te e d at V 5) gss = +30V. Easily designed drive circuits. 6) Easy to use in parallel. â'¢ S tru c tu re Silicon N-channel MOSFET transistor â'¢ A , 0 A /^s Rise time Turn-off delay time â'¢ E le c tric a l characteristic curves 50r 2 , 2SK2713 Transistors â'¢ E le c tric a l characteristic curves Ta=25*C di/dt=100A/>iS Vgs=0V Pulsed -
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Abstract: as the TO92. FTR SIL type with a height of 3.4 mm and a lead pitch of 2.54 mm. E X P L A N A T , Transistors Switching (300V, 16A) 2SK2739 â'¢ F e a tu re s â'¢E x te rn a l dim ensions , ) Source MOS MOSFET transistor FET Silicon N-channei â'¢ A b s o lu te m axim um ratings (Ta , Transistors 2SK2739 â'¢ E le c tric a l characteristics (Ta = 2 5 t ) Symbol Min. Typ. Max , y /s, D u ty cy cle £1?i â'¢ E le c tric a l characteristic curves 2 5 10 20 50 -
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Abstract: ® POWER MOSFET IRFN240 N -C H A N N E L Product Summary 200 Volt, 0.180 HEXFET HEXFET , Temperature Weight 4 A S 5 4 5 E 0 0 2 4 0 7 1 031 IRFN240 18 11 72 125 1.0 ±20 450 18 12.5 , " Û 5.3 V ns ^ â'" lO n Modified MOSFET symbol showing me integral reverse p-n junction , = I -i E E !! = â'" Z :! T P T J T J E 1 T , 1 É â'" - ! 1 , = = = : â'" = â'" = = i f't-r " ' _| 1 -
OCR Scan

mosfet ftr 03

Abstract: IRF540 application â o 0) N E o 10 15 20 +Vs (V) Applications Discussion LCD Driver Application Many hand-held , input voltage. This application can be used also in a PDA hand held device. IRF9Z30 MOSFET P VÃAT I 10|iF V ftr 1Meg 1 Meg -o^ oâ'" SW SPST Lx = 1mH Cx= 120pF F0 = 20kHz RC5010 LX CX , 4.80 5.00 2 E .150 .158 3.81 4.01 2 e .050 BSC 1.27 BSC H .228 .244 5.79 6.20 h .010 .020 0.25 , : 1. Dimensioning and tolerancing per ANSI Y14.5M-1982. 2. "D" and "E" do not include mold flash
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IRF540 application Notebook schematic RF Transistor 2n2222 for 5v regulated power supply 1N5817 2N2222 RC501OM DS3000501
Abstract: undervoltage lockout, even in the absence of VDD power to the device. This haM M tevent MOSFET tum-on due to capacitive current through t h e j^ M ^ E n B t e c itance of the power MOSFET in the presence of h la k r iy , Driver Application U N fTR O D E C O R P O R A T IO N 7 C O N T IN E N T A L B LV D . · M E R R IM A C K , buffer/driver designed to drive highly capacitive loads such as power MOSFET gates at high speeds. The , O U T 2 111 12 13 14 15 16 17 18 GND G t GND OUT2 VDD2 IN2 U j E 8 H jH il] jo -
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UCC1776 UCC2776 UCC3776 UC3879

equivalent do transistor fb 3306

Abstract: Mosfet FTR 03-E â'¢ Low Startup and Operating Current C E t R rjTi Representative Block Diagram jU K f 14 , * u 1t 44 Out DUf Vcc = 15 V Ft-r = 4.0 kto 16 k â'"Ta =25° Ã' 40 â'"C|_= 15 pF 1 4 2 , k 500 k 1.0 M f0SC, OSCILLATOR FREQUENCY (Hz) b 3 b ? E S 3 â¡ m 7 1 0 c Û4à l 3-308 , applications where efficient bootstrap startup techniques are required (Figure 28). T h e -L suffix version , sensing power MOSFET applications. Drive Output 2 Enable Pin This input is used to enable Drive Output 2
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equivalent do transistor fb 3306 fa 1711a MC34065-H MC33065-H MC34065-L BE22-118CP EER40 BEER40-1112CP
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