| Fulltext Datasheet Results |
1 - 50 of about 10000+ for Model 281 |
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First line: RDN100N20 SPICE PARAMETER RDN100N20 RDN100N20 NMOSFET model Date: 2007/08/10 ******************D .SUBCKT RDN100N20 MOS_N .171 10.5 .MODEL MOS_N NMOS LEVEL=3 L=2.0000E-6 KP=3.1207E-6 RS=10.000E-3 RD=0 VTO=2.8198 RDS=8.0000E6 TOX=2.0000E-6 CGSO=700p CGDO=20p CBD=0 RG=0 RB=1.0000E-3 GAMMA=0 ETA=100.00E Abstract: .. MODEL DDS D + IS=281.67E-15 67E-15 + N=.94633 + RS=16.324E-3 324E-3 + IKF=.50607 + CJO=239.83E-12 83E-12 + M=1.0633 + VJ=11.825 + BV=200 + TT=135n 135n .MODEL DDG D + CJO=1.4956E-9 4956E-9 + M=1.0808 + VJ=.9816 + BV=200 .MODEL .. Tags: RDN100N20 Model 281 0808 RDN100N20 |
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First line: 2.2K resistor datasheet SPICE PARAMETER DTD123EK DTD123EK DIGITAL model Date: 2007/01/12 with resistors *****************C .SUBCKT DTD123EK Base 2.2k Base 2.2k Base QDTD1 .MODEL .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=33 Abstract: .. * DTD123EK DTD123EK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with resistors *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: 2.2K resistor datasheet Model 281 6040* DTD123EK |
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First line: 538 NPN transistor SPICE PARAMETER DTD114EK DTD114EK DIGITAL model Date: 2007/01/12 with resistors *****************C .SUBCKT DTD114EK Base Base Base QDTD1 .MODEL .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 NC=1.2 Abstract: .. * DTD114EK DTD114EK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with resistors *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: 538 NPN transistor 6040* DTD114EK |
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First line: SPICE PARAMETER DTD113EK DTD113EK DIGITAL model Date: 2007/01/12 with resistors *****************C .SUBCKT DTD113EK Base Base Base QDTD1 .MODEL .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 NC=1.2215 NK=.60402 RE=.2 Abstract: .. * DTD113EK DTD113EK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with resistors *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: 6040* DTD113EK |
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First line: 538 NPN transistor SPICE PARAMETER DTD113ZK DTD113ZK DIGITAL model Date: 2007/01/12 with resistors *****************C .SUBCKT DTD113ZK Base Base Base QDTD1 .MODEL .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 NC=1.2 Abstract: .. * DTD113ZK DTD113ZK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with resistors *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: 538 NPN transistor Model 281 6040* DTD113ZK |
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First line: SPICE PARAMETER DTD123YK DTD123YK DIGITAL model Date: 2007/01/12 with resistors *****************C .SUBCKT DTD123YK Base 2.2k Base Base QDTD1 .MODEL .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 NC=1.2215 NK=.60402 Abstract: .. * DTD123YK DTD123YK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with resistors *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: DTD123YK BJT 100 6040* DTD123YK |
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First line: resistor 4.7k SPICE PARAMETER DTD143EK DTD143EK DIGITAL model Date: 2007/01/12 with resistors *****************C .SUBCKT DTD143EK Base 4.7k Base 4.7k Base QDTD1 .MODEL .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 N Abstract: .. * DTD143EK DTD143EK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with resistors *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: resistor 4.7k Model 281 dtd143ek bjt 100 95804 7K 330 6040* DTD143EK |
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First line: SPICE PARAMETER DTD113ZU DTD113ZU DIGITAL model Date: 2007/01/12 with resistors *****************C .SUBCKT DTD113ZU Base Base Base QDTD1 .MODEL .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 NC=1.2215 NK=.60402 RE=.2 Abstract: .. * DTD113ZU DTD113ZU DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with resistors *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: 6040* DTD113ZU |
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First line: 538 NPN transistor SPICE PARAMETER DTD143TK DTD143TK DIGITAL model Date: 2007/01/12 with resistor *****************C .SUBCKT DTD143TK Base 4.7k Base QDTD1 .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 NC=1.2215 NK=. Abstract: .. * DTD143TK DTD143TK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with a resistor *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: 538 NPN transistor bjt 100 6040* DTD143TK |
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First line: SPICE PARAMETER DTD123TK DTD123TK DIGITAL model Date: 2007/01/12 with resistor *****************C .SUBCKT DTD123TK Base 2.2k Base QDTD1 .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 NC=1.2215 NK=.60402 RE=.2 RB=2.26 Abstract: .. * DTD123TK DTD123TK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with a resistor *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: Model 281 bjt 100 6040* DTD123TK |
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First line: SPICE PARAMETER DTD114GK DTD114GK DIGITAL model Date: 2007/01/12 with resistor *****************C .SUBCKT DTD114GK QDTD1 .MODEL .MODEL QDTD1 IS=100.00E-15 BF=182.90 VAF=10 IKF=.95804 ISE=100.00E-15 NE=1.5784 BR=76.281 VAR=100 IKR=.13306 ISC=330.91E-15 NC=1.2215 NK=.60402 RE=.2 RB=2.2699 RC=.10912 CJ Abstract: .. * DTD114GK DTD114GK DIGITAL NPN BJT model * Date: 2007/01/12 * BJT with a resistor *C B .. 95804 + ISE=100.00E-15 00E-15 + NE=1.5784 + BR=76.281 + VAR=100 + IKR=.13306 + ISC=330.91E-15 91E-15 + NC .. Tags: Model 281 DTD114GK 6040* DTD114GK |
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First line: Equivalent Circuit Model Library Inductors VLM10555-2 Series Circuit Diagram Apr. 2009 Model Type: Simple Model Abstract: .. Model Type: Simple Model Inductors / VLM10555-2 VLM10555-2 Series. Part No. L1[uH] R1[ohm] C1[pF] R2[ohm .. VLM10555T-R70M120-3 VLM10555T-R70M120-3 0.7 281.48 3.6513 0.0021. VLM10555T-1R2M100-3 VLM10555T-1R2M100-3 1.2 539.03 4.4480 0.0027 .. Tags: 4480 0022 VLM10555-2 |
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First line: PD025-PM ORTEL CORP PDDD132 MORT 7-41^50 OPJEL CORPORATION 2015 Chestnut Alhambra, 91803 Tel: (818) 281-3636 Telex: Fax: (818) 281-8231 MODEL PD025-0M (PD025-PM) PHOTODIODE Preliminary Data Sheet PARAMETER SYMBOL RATING Kor-ward Current Reverse Voltage Power Dissipation Abstract: .. , CA 91803 Tel: 818 281-3636 Telex: 752 434 Fax: 818 281-8231 MODEL PD025-0M PD025-0M and PD025-PM PD025-PM PHOTODIODE Preliminary Data Sheet ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UN I To Kor .. Tags: PD025-PM datasheet abstract.. |
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First line: Filter 261.120MHz Part MA07831 MAXIMUM RATING: 1.Operating Temperature: Storage Temperature: CHARACTERISTICS: Ambient Temperature: 25°C Characteristics Min. Center frequency Minimum Insertion loss I.L. Lower Bandedge Upper Bandedge Lower Bandedge Upper Bandedge 263.04 257.12 Value Typ. 261.12 11 Abstract: .. 3 269.12 MHz~281.12 MHz dB 47 48 - -. 4 281.12 MHz~361.12 MHz dB 47 52 - -. Substrate Material .. SAW Filter 261.120MHz 120MHz Model: TB0204A TB0204A . Part No: MA07831 MA07831 REV. NO.: 1. TB0204A TB0204A v1 2. D. FREQUENCY .. Tags: MA07831 |
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First line: SPICE Device Model Si1912EDH N-Channel 20-V (D-S) MOSFET with Copper Leadframe Characteristics N-channel Vertical DMOS Macro-Model (Sub-circuit) Level Applicable Both Linear Switch Mode Applicable Over 125°C Temperature Range Models Gate Charge, Transient, Diode Reverse Recovery Characteristics Abstract: .. characteristics while avoiding convergence problems of switched Cgd model. Model parameter .. .99A 0.272 0.281 Ω. VGS = 1.8V, ID = 0.2A 0.331 0.344. Forward Transconductance a gfs VDS = 10V, ID = 1 .. Tags: Si1912EDH |
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First line: Si7326DN SPICE Device Model Si7326DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET CHARACTERISTICS Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. on VDS ≥ 5 V, VGS = 10 V 281 A. VGS = 10 V, ID = 10 A 0.015 0.015. Drain-Source On-State Resistancea r DS .. Tags: SI7326DN Si7326DN |
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First line: 74146 SPICE Device Model Si7652DP Vishay Siliconix N-Channel Reduced Fast Switching MOSFET CHARACTERISTICS Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. on VDS ≥ 5 V, VGS = 10 V 281 A. VGS = 10 V, ID = 9 A 0.0152 0.0155. Drain-Source On-State Resistancea r .. Tags: 74146* Si7652DP |
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First line: PIN photodiode ps Photodiode 0RTEL C0RP MODEL PD050-OM ORTEL CORPOIWION PHOTODIODE HIGH SPEED GaAIAs/GaAs PHOTODIODE Bandwidth Responsivity 0.45 Response Rise Time Optical Mount Semi-Insulating Substrate Ortel Corporation Model PD050-OM photo-detector consisting very high speed, highly efficient GaA Abstract: .. Chestnut St. †Alhambra, CA 91803 †818 281 -3636 †TLX 752434 ORTEL CORP MODEL PD050-OM PD050-OM ORTEL CORPORATION P H OTO DIODE HIGH SPEED GaAIAs/GaAs PIN PHOTODIODE ABSOLUTE OPERATIONAL MAXIMUM .. Tags: Photodiode PIN photodiode ps datasheet abstract.. |
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First line: 37.0-42.0 GaAs MMIC Power Amplifier December 2007 06-Dec-07 P1031-BD Abstract: .. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281 .. Temperature Ta Channel Temperature Tch ESD - Human Body Model ESD - Machine Body Model. +6.0 .. Tags: P1031-BD |
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First line: SUP33N20* SUP33N20-60P_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characterist Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT3 N/A 281.3450 m N/A. CT4 N/A 74.0590 m N/A. www.vishay.com 2. Document Number: 69836 Revision .. Tags: SUP33N20* 1558 SUP33N20-60P RC |
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First line: SUM33N20-60P_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT3 N/A 281.3450 m N/A. CT4 N/A 74.0590 m N/A. www.vishay.com 2. Document Number: 69792 Revision .. Tags: 1558 SUM33N20-60P RC |
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First line: 9952 Si1302DL_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RT1 281.9587 N/A 57.8141. RT2 29.0518 N/A 23.6881. RT3 72.9070 N/A 132.3185. RT4 65.3672 N/A 125 .. Tags: M 9587 9952 9823 8018 Si1302DL RC |
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First line: 20.0-38.0 GaAs MMIC Noise Amplifier, 3x3mm L1010-QT Abstract: .. The devices uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based .. Page 2 of 5 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 .. Tags: L1010-QT |
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First line: Si6562CDQ_RC Thermal Model Parameters Abstract: .. a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers .. CT1 674.6186 u 281.1533 u 2.2188 m 2.1084 m. CT2 4.9238 m 4.6773 m 201.7034 u 217.0819 u. CT3 39.5649 .. Tags: 8249 2703 Si6562CDQ RC |
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First line: SiR436DP_RC Thermal Model Parameters Abstract: .. a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers .. RT2 6.1095 281.6401 m N/A. RT3 9.6207 344.5221 m N/A. RT4 51.5589 1.4341 N/A. Thermal Capacitance .. Tags: 8905 6401 SiR436DP RC |
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First line: SiHFR224_RC, SiHFU224_RC Thermal Model Parameters Abstract: .. a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers .. RT3 N/A 281.5873m 5873m N/A. RT4 N/A 638.0161m 0161m N/A. THERMAL CAPACITANCE Joules/ C Junction to .. Tags: SiHFR224 RC SiHFU224 RC |
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First line: U840 diode series Washable snap-action pushbutton switches Sealed Abstract: .. pieces depending on model. Mounting accessories : standard hardware supplied with all models .. .281 .187 .023 .023 .185 .259 .446 .500 .185 .185 .187 .062 DIA 4.25 .. Tags: U840 diode datasheet abstract.. |
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First line: SPICE Device Model Si3552DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET CHARACTERISTICS P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level Apply both Linear Switching Application Accurate over 125°C Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. = −1.2 A P-Ch 0.281. Ω. VDS = 10 V, ID = 2.5 A N-Ch 4.3. Forward Transconductancea g fs. VDS = −15 V, ID = −1 .. Tags: Si3552DV |
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First line: Harris CA3086 CA3046 bjt Pspice ca3086 CA3046 Harris CA3046 CA3046, CA3086, CA3127 Transistor Array SPICE Models Abstract: .. * *CA3046 CA3046 PSpice MODEL *REV: 2-24-97 * ----- BJT MODEL ----- * .model CA3046 CA3046 NPN + IS = 10.0E - 15 .. + NC = 2.000E 000E + 00 IKR = 10.00E - 03 RC = 10.000E 000E + 00 CJC = 281.1E - 15. + MJC = 0.138E 138E - 00 VJC = 0.7500E 7500E - 00 .. Tags: Pspice ca3086 PSpice* Harris CA3086 Harris CA3046 CA3127 CA3086 spice CA3086 CA3046 spice CA3046 bjt CA3046* CA3046 CA3086 CA3127 MM9701 |
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First line: 13.5-17.0/27.0-34.0 GaAs MMIC Active Doubler X1007-BD Chip Device Layout Abstract: .. This MMIC uses Mimix Broadband’s 0.15um 15um GaAs PHEMT device model technology, and is based upon .. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281 .. Tags: tanaka TS3332LD epoxy tanaka TS3332LD tanaka* X1007-BD |
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First line: Model 162, 1/2" (12.7mm) Turn Wirewound Precision Potentiometer Abstract: .. distributor item Example: Model 162, 10K Example: 162, 164 - 1. Other characteristics will be .. Ø 0.281 7.14 + 0.000 - 0.0003. + 0.000 - 0.001. 1/4-32 UNEF-2A SCREWDRIVER. SLOT 0.025 WIDE 0.64 .. Tags: Spectrol 162 datasheet abstract.. |
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First line: Spectrol Model 162, 1/2" (12.7mm) Turn Wirewound Precision Potentiometer Abstract: .. distributor item Example: Model 162, 10K Example: 162, 164 - 1. Other characteristics will be .. Ø 0.281 7.14 + 0.000 - 0.0003. + 0.000 - 0.001. 1/4-32 UNEF-2A SCREWDRIVER. SLOT 0.025 WIDE 0.64 .. Tags: Spectrol potentiometer 100 ohm datasheet abstract.. |
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First line: C1259 C1259 Telecommunication Universal Clock Abstract: .. Germany +49-07268-801-0 tel +49-07268-801-281 fax. Vectron Asia Pacific Sales Office Unit .. Previous Vectron Model Numbers AD; MCOS73 MCOS73 . Frequency range 1 MHz – 80 MHz. Frequency .. Tags: C1259 Mcos* C1259 |
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First line: C531* C5315 Gbit/s standard Sonet Abstract: .. Germany +49-07268-801-0 tel +49-07268-801-281 fax. Vectron Asia Pacific Sales Office Unit .. Previous Vectron Model Numbers. Frequency range 622,08 to 669,3265 MHz. Standard frequencies .. Tags: C531* C5315 |
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First line: satellite phone system Ultra Wideband Eight Power Dividers MODEL NUMBER P8D0518-8 P8D0526-8 P8D0540-8 FREQUENCY RANGE (GHz) 18.0 26.0 40.0 VSWR INPUT INSERTION OUTPUT MAX. LOSS MAX. (dB) 1.70:1 1.70:1 1.80:1 1.75:1 1.90:1 1.80:1 ISOLATION (dB) >14.0 >13.0 >12.0 Applications Satellite System Abstract: .. MODEL NUMBER. FREQUENCY RANGE GHz VSWR INPUT & OUTPUT MAX. INSERTION LOSS MAX. dB ISOLATION .. 1.281 .005. 0.641 .005. 3.416 .005. 5.80. 1.19. MOUNTING HOLES. 0.140 +.005 -.000 DIA. THRU 6 .. Tags: satellite phone system P8D0518-8 P8D0526-8 P8D0540-8 |
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First line: K 1358 Diplomat 1149 PERFORMANCE GRAPH STANDARD FEATURES Abstract: .. Model. Number. Rated. Voltage Operating. Voltage Range Rated. Current Rated Input. Power. Speed .. • Size: 281 mm x 125 mm deep 11.0” x 4.9” • Operating Temperature: -10 C to +70 C .. Tags: K 1358 datasheet abstract.. |
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First line: SPICE Device Model Si4942DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET CHARACTERISTICS Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. on VDS ≥ 5 V, VGS = 10 V 281 A. VGS = 10 V, ID = 7.4 A 0.017 0.017. Drain-Source On-State Resistancea r .. Tags: Si4942DY |
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First line: SPICE Device Model Si4800BDY Vishay Siliconix N-Channel Reduced Fast Switching MOSFET CHARACTERISTICS Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. on VDS ≥ 5 V, VGS = 10 V 281 A. VGS = 10 V, ID = 9 A 0.0152 0.0155. Drain-Source On-State Resistancea r .. Tags: Si4800BDY SPICE Device Model SI4800BDY 72258 Si4800BDY |
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First line: SPICE Device Model Si7844DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. on VDS ≥ 5 V, VGS = 10 V 281 A. VGS = 10 V, ID = 7.5 A 0.016 0.018. Drain-Source On-State Resistancea r .. Tags: Si7844DP |
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First line: SPICE Device Model Si1912EDH Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Copper Leadframe CHARACTERISTICS Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. VGS = 2.5 V, ID = 0.99 A 0.272 0.281 Drain-Source On-State Resistance a r DS on VGS = 1.8 V, ID = 0.2 .. Tags: Si1912EDH |
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First line: SPICE Device Model Si7804DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET CHARACTERISTICS Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. on VDS ≥ 5 V, VGS = 10 V 281 A. VGS = 10 V, ID = 10 A 0.015 0.015. Drain-Source On-State Resistancea r DS .. Tags: Si7804DN |
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First line: SPICE Device Model Si2305ADS Vishay Siliconix P-Channel (D-S) MOSFET CHARACTERISTICS Abstract: .. All model parameter values are optimized to provide a best fit to the measured electrical data .. Output Capacitance Coss 281 290. Reverse Transfer Capacitance Crss. VDS = −4 V, VGS = 0 V, f = 1 MHz .. Tags: SI2305* Si2305ADS |
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First line: ortel f PIN Photodiode For CATV Receiver Ortel* Model 2606A/B CATV Return Path Photodiode Receiver Module _Model 2606A/B_ CATV Return Path Photodiode Receiver Module Hybrid fiber coax networks being deployed worldwide, return path critical factor providing interactive capability these networks. Orte Abstract: .. Ortel's Model 2606 series of return path photodiodes are designed to provide the performance .. Fax 818 281-8231 email: mtkbba@ortel.com D 1096 Ortel Corporation Making Light Work For You .. Tags: Ortel* PIN Photodiode For CATV Receiver ortel f datasheet abstract.. |
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First line: ORTEL DFB laser Ortel MODEL Laser Module Ortel Model 1610A Laser Module analog InGaAsP laser butterfly package with internal optical isolator. laser emits 1300 designed links fiber backbone supertrunking applications. module provides high output power, R1N, distortion, which results superior perform Abstract: .. 40 channels @ 5.5% modulation depth/channel 3 The Ortel Model 1610A 1610A can withstand occasional .. Chestnut Street Alhambra,CA 91803 818 281-3636 FAX: 818 281-823 TELEX: 752434 o  Ortel .. Tags: Ortel ORTEL DFB laser datasheet abstract.. |
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First line: 500-6000 Dual, Ultra Noise, High Amplifier CDQ0303-QS Abstract: .. Page 1 of 14 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 .. The PSFET is a Mimix imple-mentation of the Parker Skellern large signal model. The model is .. Tags: CDQ0303-QS |
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First line: Issued Date: Product Name: Filter 280,281,284MHz F-11 Parts No.: TA280E1,TA281E1,TA284E1 Customer Parts No.: Abstract: .. SAW Filter 280, 281, 284 MHz For Page r MODEL NO.: TA280E1 TA280E1 REV. NO.:1. A. MAXIMUM RATING: 1. Input Power Level: 0 dBm 2. DC voltage: 10 V 3. Operating Temperature: -10 C to +50 C 4. Storage Temperature .. Tags: TA280E1 TA281E1 TA284E1 |
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First line: STO200-02 SDH/SONET Measurement Equipment Abstract: .. , Germany • Tel +49-7268-801-0 • Fax +49-07268-801-281 • www.corningfrequency.de. 1 / 2 .. Ordering Code Model Frequency. Example: STO200-02 STO200-02 .. 12M8000 12M8000 . Order: STO200-02 STO200-02 . Note 1 can drive .. Tags: STO200-02 corning Data Book 2001 STO200-02 |
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First line: Technical Data Ceramic Resonator Part Previous Part CSBLA1M00J58-B0 CSB1000J Applied M30620FCUFP Abstract: .. Oscillating Frequency vs C1,C2 Characteristics MODEL : CSBLA1M00J58-B0 CSBLA1M00J58-B0 with M30620FCUFP M30620FCUFP .. 3 1000.765 1000.281 0.0484. 4 1000.266 999.762 0.0504. 5 1002.048 1001.431 0.0615. _ X 1000.622 .. Tags: CSB1000J |
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First line: MODEL SERIES 8140 7/8" Diameter 10-Turn* Hybrid Precision Potentiometer Position Sensor MODEL STYLES Abstract: .. * Model available in 3 and 5 turn versions - contact factory for details. 2-124 Model Series .. .281. 7.137. .406. 10.312. Dia. Dia. Dia. Dia. 1/4-32 UNEF Thread 3/8-32 UNEF Thread. 7381 7386 Dim. A .. Tags: datasheet abstract.. |
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First line: ultrasonic bond 10.0-40.0 GaAs MMIC Distributed Amplifier 22DSBA0423 Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 Small Signal Gain Noise Figure 100% On-Wafer Output Power Testing 100% Visual Inspection MIL-STD-883 Method 2010 Abstract: .. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon .. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281 .. Tags: ultrasonic bond 22DSBA0423 22DSBA0423 |
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