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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions - LCC-28 LCC-28 Quad FET Q2 ... | Original |
1 pages, |
7105 fet 7105 IRF FET LCC-28 LCC-28 abstract |
| Abstract: MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per , GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray ... | Original |
4 pages, |
TO259 TO-259 IRHI7360SE IRHI7360SE abstract |
| Abstract: ) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage , during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source ... | Original |
4 pages, |
IRHF7310SE IRHF7310SE abstract |
| Abstract: environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750 , ) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. ISD -6.5A, di/dt -140 A/us ... | Original |
4 pages, |
Rad Hard in MOSFET IRHN9230 datasheet abstract |
| Abstract: ) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage , GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray ... | Original |
4 pages, |
IRHI7460SE IRHI7460SE abstract |
| Abstract: Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test , ) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. I SD -6.5A, di/dt -140 A/us ... | Original |
4 pages, |
Rad Hard in MOSFET IRH9230 IRH9230 abstract |
| Abstract: ) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage , 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray ... | Original |
4 pages, |
IRHF7310SE IRHF7310SE abstract |
| Abstract: tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International , GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray ... | Original |
4 pages, |
IRHNA8260 IRHNA7260 datasheet abstract |
| Abstract: a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International , MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode ... | Original |
4 pages, |
IRHN7C50SE IRHN2C50SE IRHN2C50SE abstract |
| Abstract: MlL-STD-750, test parameters. method 1019. International Rectifier has imposed a standard gate voltage of , (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed ... | Original |
4 pages, |
IRHM7C50SE IRHM2C50SE 1252B 1252B abstract |
| Abstract: Terminals: Pure tin plated, lead fre&, soiderable per MlL-STD-750, Method 2026 ^ Polarity: Color band ... | OCR Scan |
2 pages, |
UF400X UF4007 UF4001 DO-41/DO-2Q4AL UF4001 abstract |
| Abstract: a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International , during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source ... | Original |
4 pages, |
IRHNA7264SE IRHNA7264SE abstract |
| Abstract: : ITO-220AB ITO-220AB molded plastic Terminals: Pure tin plated, lead free, solder able per MlL-STD-750, Method 2026 ... | OCR Scan |
2 pages, |
MBRF2035CT MBRF20200CT esis power 20100 ct ITO-22QAB MBRF2035CT abstract |
| Abstract: environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750 , irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the ... | Original |
4 pages, |
IRHM9230 IRHM9230 abstract |
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| International Rectifier - Technical Information - Total Dose Radiation Hardness Assurance (RHA) Test Program IR Application Note AN-999 AN-999 AN-999 AN-999 (Page 1 of 1) Title: International Rectifier's Total Dose Radiation Hardness Assurance (RHA) Test Program For many years, IR has been the leader in radiation hardened MOSFETS. The design and processing of these devices has been carefully planned and i www.datasheetarchive.com/files/international-rectifier/docs/wcd00009/wcd009a3.htm |
International Rectifier | 06/10/1998 | 6.89 Kb | HTM | wcd009a3.htm |