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Mj2955 power transistor

Catalog Datasheet MFG & Type PDF Document Tags

2N3055 power amplifier circuit

Abstract: 2n3055 ) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handling , Complementary Silicon Power Transistors . . . designed for general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Collector­Base Voltage Emitter­Base Voltage 100 7 Collector Current - Continuous Base Current 15 7 Total Power , Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
ON Semiconductor
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2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2n3055 circuit 2N3055 typical applications 2N3055 MJ2955 204AA 2N3055/D

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for generalâ'purpose switching and amplifier applications , the power handling ability of a transistor: average junction temperature and second breakdown. Safe , '¢ Collectorâ'Emitter Saturation Voltage â' â'¢ â'¢ 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS , Current â' Continuous Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C Derate
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: · Power dissipation - PD = 115W at TC = 25°C. · DC current gain hFE = , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , ) IB, Base Current (mA) Page 3 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors , .0 2N3055, MJ2955 Complementary Power Transistors Notes: International Sales Offices: AUSTRALIA ­
Multicomp
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2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 50 µs dc 1 ms There are two limitations on the power handling ability of a transistor: average , ON Semiconductort NPN Complementary Silicon Power Transistors . . . designed for general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , Current - Continuous Base Current 15 7 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER
ON Semiconductor
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2N3055 power circuit 2n3055 equal 2N3055 JAPAN MJ2955 mexico 2N3055-1 value of 2n3055

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , There are two limitations on the power handling ability of a transistor: average junction temperature , POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W Vdc MARKING DIAGRAM TO-204AA (TO , 7 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 Watts W/°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 TRANSISTOR 2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet mj2955 TO-3

2N3055

Abstract: DC variable power with 2n3055 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , ) 60 500 ms 250 ms dc 1 ms There are two limitations on the power handling ability of a transistor , Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 200 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location
ON Semiconductor
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2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier 2n3055h mj2955 safe operating area

2N3055

Abstract: 2n3055 motorola Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , 2. Active Region Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data , Excellent Safe Operating Area 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
Motorola
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2n3055 motorola 2N3055-D 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 hfe 2n3055

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose , 2. Active Region Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data , Excellent Safe Operating Area 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
Motorola
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2N3055/MJ2955 2n3055 datasheet 2N3055 TO-3 2N3055* motorola motorola power transistor 2N3055 equivalent transistor 2n3055

mj2955

Abstract: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS â  STMicroelectronics PREFERRED , NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series , MJ2955. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM C , cto r-B a se V olta g e ( I e = 0) 2N 3055 PNP Unit MJ2955 100 V 70 V C , are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA Rthj-case Therm al R
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OCR Scan
SC08820 SC08830 P003F

MJ2955 TRANSISTOR

Abstract: pnp transistor 2N3055 AREA(SOA) There are two limitation on the power handling ability of a transistor: average junction , COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching applications FEA TU RES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A * V cE (*t) * NPN 2N3055 PNP MJ2955 11 v @ 'c = 4 0 A - 'b = 400 , Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation @
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OCR Scan
pnp transistor 2N3055 2n3055 collector characteristic curve Transistor MJ2955 Mj2955 power transistor data transistor 2n3055 t 2N3055

2n3055

Abstract: 2N3055 curve ) 15 120 There are two limitation on the power handling ability of a transistor: average junction , COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching applications Boca Semiconductor Corp. (BSC) FEATURES: * Power Dissipation - PD = 115W @ Tc = , mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , Voltage ^EBO 7.0 V Collector Current-Continuous 'c 15 A Base Current >B 7.0 A Total Power Dissipation
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OCR Scan
2N3055 curve npn 2n3055 MJ29S5

MJ2955 TRANSISTOR

Abstract: Transistor MJ2955 MJ2955 SILICON PNP SWITCHING TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJ2955 is a silicon epitaxial-base planar PNP transistors in TO-3 metal case, intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. 1 2 TO , Temperature September 1997 150 W -65 to 200 o C 200 o C 1/4 MJ2955 THERMAL , Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 20 5 4 70 MHz MJ2955 TO
STMicroelectronics
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2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , ) 60 500 ms 250 ms dc 1 ms There are two limitations on the power handling ability of a transistor , Continuous Base Current 15 7 Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 200 15 A POWER TRANSISTORS , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A =
ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055

transistor 2N3055

Abstract: MJ2955 300 watts amplifier MJ2955 (SILICON) PNP SILICON POWER TRANSISTOR . designed for general-purpose switching and , FIGURE 1 - POWER DERATING \ 0 25 50 75 100 125 150 175 200 Tc, CASE TEMPERATURE ("CI 15 AMPERE POWER TRANSISTOR PNP , ACTIVE-REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor , '¢ Complement to Motorola's "Epi-Base" Transistor, 2N3055 MAXIMUM RATINGS Rating Symbol Velue Unit
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OCR Scan
MJ3000 MJ3001 MJ2500 transistor 2N3055 MBD5300 AN-415 C-200

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , two limitations on the power handling ability of a transistor: average junction temperature and , Saturation Voltage - · · 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS VCE , Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C TJ
ON Semiconductor
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2N30 MJ2955G

2n3055

Abstract: 2N3055M are two limitation on the power handling ability of a transistor: average junction temperature and , ÃlMOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 115W@TC = 25°C * DC Current , NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V , Current-Continuous 'c 15 A Base Current >B 7.0 A Total Power Dissipation @Tc=25°C Derate above 25°C PD 115 0.657
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OCR Scan
2N3055M 2N3055MJ

2N3055G

Abstract: MJ2955 2n3055 200 watts amplifier diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , power handling ability of a transistor: average junction temperature and second breakdown. Safe , 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS VCE(sat) = 1.1 Vdc (Max , Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C TJ, Tstg -
ON Semiconductor
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MJ-20 OF transistor 2n3055 to-3 package TO-204AA transistor power transistor mex transistor npn 2n3055g

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics , Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits , MJ2955. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA
STMicroelectronics
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2N3055 series voltage regulator 2N3055 ST 2n3055 voltage regulator st 2n3055 complementary npn-pnp complementary npn-pnp power transistors

2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , There are two limitations on the power handling ability of a transistor: average junction temperature , Voltage VEB 7 Vdc IC 15 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W Adc Collector Current - Continuous Base Current IB 7 Adc Total Power Dissipation @ TC , or MJ2955 A = Assembly Location YY = Year WW = Work Week x = 1, 2, or 3 THERMAL
ON Semiconductor
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2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 1 2 TO-3 INTERNAL , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE
STMicroelectronics
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2N3055 specification 2N3055 schematic diagram J 2N3055
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