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STELLARIS-3P-CMXSI-MICRONET-STACK Texas Instruments CMX-MicroNet ri Buy
BEMICRONIO-2-PROCSDK-REF Texas Instruments Altera/Arrow BeMicro Nios II Processor SDK with DP83848 in USB Stick Format ri Buy

Micron DDR marking H12

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: , Burst Mode Flash Memory and 128/256-Mb (8/16-M 8/16-M x 16-bit) DDR DRAM ADVANCE INFORMATION Data Sheet , Mode Flash Memory and 128/256-Mb (8/16-M 8/16-M x 16-bit) DDR DRAM ADVANCE INFORMATION Data Sheet , component. Refer to the DDR SDRAM Type 1 data sheet (revision A2) for full electrical specifications of the DDR SDRAM component. Refer to the DDR SDRAM Type 5 data sheet (revision A0) for full electrical specifications of the DDR SDRAM component The S72NS S72NS Series is a product line of stacked Multi-Chip Product (MCP ... Spansion
Original
datasheet

17 pages,
302.4 Kb

S72NS512ND0 D-DQ11 ELPIDA K2 F12 MARK MICRON mcp NS512 S29NS-N S72NS-N S72NS128 Multi-Chip Package MEMORY ADQ14 ADQ12 8/16-M TEXT
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Abstract: to the Micron Web site: www.micron.com/dramds FEATURES 144-Ball T-FBGA · 2.5V VEXT, 1.8V VDD , Non-interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR · Target 600 Mb/s/p data , issued in total each 32ms) OPTIONS MARKING · Clock Cycle Timing 3.3ns (300 MHz) 4ns (250 MHz , DESCRIPTION 8 Meg x 32 16 Meg x 16 GENERAL DESCRIPTION The Micron ® 256Mb Reduced Latency DRAM (RLDRAM) contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) format ... Micron Technology
Original
datasheet

43 pages,
649.39 Kb

Micron 4g diode wb7 diode marking code 4n code Marking wb6 MICRON 63 5256 DRAM 43256 2N2U MT49H16M16 MT49H16M16FM MT49H8M32 MT49H8M32FM Marking D1c MARKING WB1 marking WB4 WR1 marking code Micron DDR marking H12 micron power resistor 24256 MICRON diode 2u TEXT
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Abstract: to the Micron Web site: www.micron.com/dramds FEATURES 144-Ball T-FBGA · 2.5V VEXT, 1.8V VDD , Non-interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR · Target 600 Mb/s/p data , issued in total each 32ms) OPTIONS MARKING · Clock Cycle Timing 3.3ns (300 MHz) 4ns (250 MHz , DESCRIPTION 8 Meg x 32 16 Meg x 16 GENERAL DESCRIPTION The Micron ® 256Mb Reduced Latency DRAM (RLDRAM) contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) format ... Micron Technology
Original
datasheet

43 pages,
440.54 Kb

MARKING d2b smd diode marking G12 WR1 marking code MARKING WB1 smd transistor marking 12G MICRON diode 2u smd wb2 smd diode schottky code marking 1A smd code book 9u SMD marking CODE 2U smd transistor 12p marking 3U 3T 3C diode wb3 smd code smd diode wb1 smd diode schottky code marking 2F smd wb1 smd marking WB3 smd diode marking codes 2U smd wb3 smd diode schottky code marking 2U TEXT
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Abstract: LATENCY (RLDRAM II) FEATURES · 288Mb · 400 MHz DDR operation (800 Mb/s/pin data rate) · Organization - , GENERAL DESCRIPTION The Micron® 288Mb Reduced Latency DRAM (RLDRAM) is a high-speed memory device , achieves a peak bandwidth of 28.8 Gb/s using two separate 18-bit double data rate (DDR) ports and a maximum system clock of 400 MHz. The double data rate (DDR) separate I/O interface transfers two 18- or 9 , ) 5ns (200 MHz) · Configuration 16 Meg x 18 32 Meg x 9 · Package 144-ball, 11mm x 18.5mm FBGA MARKING ... Micron Technology
Original
datasheet

47 pages,
680.28 Kb

TEXT
datasheet frame
Abstract: LATENCY (RLDRAM II) FEATURES · 288Mb · 400 MHz DDR operation (800 Mb/s/pin data rate) · Organization - , GENERAL DESCRIPTION The Micron® 288Mb Reduced Latency DRAM (RLDRAM) is a high-speed memory device , achieves a peak bandwidth of 28.8 Gb/s using two separate 18-bit double data rate (DDR) ports and a maximum system clock of 400 MHz. The double data rate (DDR) separate I/O interface transfers two 18- or 9 , ) 5ns (200 MHz) · Configuration 16 Meg x 18 32 Meg x 9 · Package 144-ball, 11mm x 18.5mm uBGA MARKING ... Micron Technology
Original
datasheet

46 pages,
577.2 Kb

TEXT
datasheet frame
Abstract: LATENCY (RLDRAM II) FEATURES · 288Mb · 400 MHz DDR operation (800 Mb/s/pin data rate) · Organization - , GENERAL DESCRIPTION The Micron® 288Mb Reduced Latency DRAM (RLDRAM) is a high-speed memory device , achieves a peak bandwidth of 28.8 Gb/s using two separate 18-bit double data rate (DDR) ports and a maximum system clock of 400 MHz. The double data rate (DDR) separate I/O interface transfers two 18- or 9 , ) 5ns (200 MHz) · Configuration 16 Meg x 18 32 Meg x 9 · Package 144-ball, 11mm x 18.5mm FBGA MARKING ... Micron Technology
Original
datasheet

46 pages,
580.39 Kb

smd marking codes BA5 smd marking codes BA2 RLDRAM SMD MARKING CODE ACY smd dk qk TEXT
datasheet frame
Abstract: LATENCY (RLDRAM II) FEATURES · 288Mb · 400 MHz DDR operation (800 Mb/s/pin data rate) · Organization - , GENERAL DESCRIPTION The Micron® 288Mb Reduced Latency DRAM (RLDRAM) is a high-speed memory device , achieves a peak bandwidth of 28.8 Gb/s using two separate 18-bit double data rate (DDR) ports and a maximum system clock of 400 MHz. The double data rate (DDR) separate I/O interface transfers two 18- or 9 , ) 5ns (200 MHz) · Configuration 16 Meg x 18 32 Meg x 9 · Package 144-ball, 11mm x 18.5mm FBGA MARKING ... Micron Technology
Original
datasheet

46 pages,
608.78 Kb

SMD MARKING CODE ACY smd codes marking A21 qkx capacitor SMD d1c TEXT
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Abstract: (RLDRAM II) MT49H16M18C MT49H16M18C MT49H32M9C MT49H32M9C Features Figure 1: 144-Ball FBGA · 288Mb · 400 MHz DDR , 32 Meg x 9 RLDRAM II Marking · Clock Cycle Timing 2.5ns (400 MHz) 3.3ns (300 MHz) 5ns (200 , : Table 1: -25 -33 -5 MT49H16M18CFM MT49H16M18CFM MT49H32M9CFM MT49H32M9CFM FM BM (lead-free)1 1. Contact Micron for , 11/04 EN 1 ©2004 Micron Technology, Inc. All rights reserved. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 16 MEG x 18, 32 MEG x 9 2.5V VEXT ... Micron Technology
Original
datasheet

44 pages,
1024.64 Kb

MARKING A53 diode smd marking BAX Marking D1c MARKING SMD x9 A22 SMD MARKING CODE SMD d2c SMD MARKING CODE A12 transistor SMD DK rc MT49H32M9C MT49H16M18C transistor smd zq Transistor smd marking A53 smd cod SMD MARKING CODE ACY ba7 transistor A53 SMD Marking Code RLDRAM plastic BA5 marking code BA7 marking BA5 marking TEXT
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Abstract: (RLDRAM II) Features · 288Mb · 400 MHz DDR operation (800 Mb/s/pin data rate) · Organization · 16 Meg x , Meg x 9 · Package 144-ball FBGA (11mm x 18.5mm) NOTE: Marking -25 -33 -5 MT49H16M18CFM MT49H16M18CFM MT49H32M9CFM MT49H32M9CFM FM BM (lead-free)1 1. Contact Micron for availability of lead-free products. pdf: 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H8M18C_1.fm - Rev. F 11/04 EN 1 ©2004 Micron Technology, Inc. All rights reserved. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT ... Micron Technology
Original
datasheet

44 pages,
1021.91 Kb

TEXT
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Abstract: 93 mW (Typical) External Memory Support: ­ 166-MHz Mobile DDR SDRAM ­ 33.3-MHz Serial FLASH 176 , Color Space Conversion ­ Gamma Correction DMD DDR Data DMD DDR Control Flash I/F DMD Reset , frame for intervals in which no new frame has been received. Mobile DDR RAM Optical Sensor CTL(9 , JANUARY 2012 ­ REVISED JULY 2013 www.ti.com Device Marking The device marking consists of the fields , Material LLLLLLLL.ZZ KOREAYYWW G8 Pin #1 ID Figure 9. Device Marking SIGNAL FUNCTIONAL ... Texas Instruments
Original
datasheet

39 pages,
775.17 Kb

DLPC300 DLPS023B DLP3000 TEXT
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NXP 23/10/2012 35869.34 Kb ZIP ird.cd.contents.zip