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Part Manufacturer Description Datasheet BUY
ISL1801IVZ Intersil Corporation sPMIC for Micro-Converter Bias and Drivers; TSSOP48; Temp Range: -40° to 85°C visit Intersil Buy
ISL1801IVZ-T Intersil Corporation sPMIC for Micro-Converter Bias and Drivers; TSSOP48; Temp Range: -40° to 85°C visit Intersil Buy
ISL32600EFBZ Intersil Corporation 1.8V to 3.3V, Micro-Power, ±15kV ESD, +125°C, Slew Rate Limited, RS-485/RS-422 Transceivers; MSOP10, SOIC14; Temp Range: -40° to 125°C visit Intersil Buy
ISL32602EFBZ-T7A Intersil Corporation 1.8V to 3.3V, Micro-Power, ±15kV ESD, +125°C, Slew Rate Limited, RS-485/RS-422 Transceivers; MSOP10, SOIC14; Temp Range: -40° to 125°C visit Intersil Buy
ISL32603EFUZ-T Intersil Corporation 1.8V to 3.3V, Micro-Power, ±15kV ESD, +125°C, Slew Rate Limited, RS-485/RS-422 Transceivers; MSOP8, SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL32612EFHZ-T7A Intersil Corporation ±16.5kV IEC ESD, 1.8V, Micro Power, RS-485/RS-422 Differential Receiver with active high Rx enable; SOT6; Temp Range: -40° to 125°C visit Intersil Buy

Micro-X marking "K"

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , Freq. Device Dept, High Freq. & Opt. Device Works, MITSUBISHI ELECTRIC Corp. 2 Marking manner of , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package
Mitsubishi
Original
MGF4921AM MGF1302 gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet gaas fet marking J MGF1961A GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

Micro-X marking "K"

Abstract: low noise Micro-X marking "K" indicated by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch , Inspection Sealing Separation DC Test, Marking RF Test (1) RF Test (2) QAT Taping, Shipping 100% Test, Ta
Mitsubishi
Original
Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v GD-32 MGF4941CL

GaAs Amplifier Micro-X Marking k

Abstract: gaas fet micro-X Package marking Measurements at Room Temperature 2.9 Marking 2.10 External Visual Inspection 2.11 Review of Final , Measurements at Room Temperature 2.9 Marking 2.11 Review of Final Production Tests Release for Burn-In , Burn-In (if specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking 2.11 Review , Measurements at Room Temperature 2.9 Marking 2.10 Dimension Check 2.11 Review of Final Production Tests
Siemens
Original
BAT15 BAT14 BAS40 BXY42 BFY180 BFY193 GaAs Amplifier Micro-X Marking k GaAs Amplifier Micro-X CFY66 BFY40 transistor "micro-x" "marking" 3

GaAs Amplifier Micro-X Marking k

Abstract: Silicon Bipolar Transistor MICRO-X Measurements at Room Temperature 2.9 Marking 2.10 External Visual Inspection 2.11 Review of Final , Measurements at Room Temperature 2.9 Marking 2.11 Review of Final Production Tests Release for Burn-In , Burn-In (if specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking 2.11 Review , Measurements at Room Temperature 2.9 Marking 2.10 Dimension Check 2.11 Review of Final Production Tests
Siemens
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CLY27 CLY30 Silicon Bipolar Transistor MICRO-X LNA ku-band microwave fet IC gaas fet micro-X Package BFY405 CFY25 CLY29 MWP-35 CLY38

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 and Gross Leak Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking , Measurements at Room Temperature 2.9 Marking 2.11 Review of Final Production Tests Release for Burn-In , ) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialization 2.11 Review of , Marking, Serialization 2.10 Dimension Check 2.11 Review of Final Production Tests Release for Burn-In
Infineon Technologies
Original
MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 guide selection microwave transistors BFy 90 transistor MMIC Amplifier Micro-X marking D EHA07482 EHA07483 EHA07484 EHA07485 EHA07486 MWP-25
Abstract: Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Gate to source Mitsubishi
Original
AEC-Q101

RO4350B ROGERS

Abstract: transistor "micro-x" "marking" 3 is a RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , Inspection Chip Separation Die / Wire bonding Internal Visual Inspection Sealing Separation DC Test, Marking
Mitsubishi
Original
RO4350B max current RO4350B

SIEMENS MICROWAVE RADIO 8 GHz

Abstract: gaas fet micro-X Package marking Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking External Visual , Marking 2.11 Review of Final Production Tests Release for Burn-In §3 Burn-In and Electrical , specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.11 Review of , specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.10 Dimension
Infineon Technologies
Original
SIEMENS MICROWAVE RADIO 8 GHz x-band power transistor BAS70B-HP bfy196 Micro-X marking "Fp" CGY40
Abstract: the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Mitsubishi
Original
MGF4963BL
Abstract: the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Mitsubishi
Original
MGF4964BL

rogers* RO4003C

Abstract: mgf1941 compliance is indicated by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO
Mitsubishi
Original
MGF1941AL rogers* RO4003C mgf1941 137 marking Micro-X gaas fet micro-X r338

gaas fet marking J

Abstract: compliance is indicated by the letter â'Gâ' after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol
Mitsubishi
Original

microwave transistor bfy193

Abstract: GaAs Amplifier Micro-X Marking k Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking External Visual , Marking 2.11 Review of Final Production Tests Release for Burn-In §3 Burn-In and Electrical , specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.11 Review of , specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.10 Dimension
Infineon Technologies
Original
microwave transistor bfy193 siemens gaas fet Bipolar Transistors infineon radar BFY420

INFINEON DIODE BAS 70

Abstract: gaas fet micro-X Package marking Marking 2.9 External Visual inspection 2.11 Review of Final Production Tests Delivery ~| §2 , Temperature 2.8 2,9 Marking 2.11 Review of Final Production Tests Release for Burn-In Bum-ln and Electrical , Measurements at Room Temperature 2.9 Marking, Serialization 2.11 Review of Final Production Tests Release for , 2.8 2.9 Marking, Serialization 2.10 Dimension Check 2.11 Review of Final Production Tests Release for
-
OCR Scan
INFINEON DIODE BAS 70 GaAs Amplifier Micro-X Marking N

Y1 SOT-89

Abstract: transistor "micro-x" "marking" 3 VXX 3 4 X2 X3 X3 Y1 Y2 Y1 Z Z2 Z Z1 Z1 Z2 Device Marking V: Part number XX , E E1 B B1 e e1 C e e1 F H Device Marking K: Part number XXX: Lot number Pin # 1 2, 4
EiC
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Y1 SOT-89 ECG050 ECG-050 1000MH 100MH 2000MH 3000M

Amplifier Micro-X "marking code" D

Abstract: MMIC Amplifier Micro-X marking 11 sensitive device, observe handling precautions! 4 3 1 2 Type Marking Ordering Code
Infineon Technologies
Original
Amplifier Micro-X "marking code" D MMIC Amplifier Micro-X marking 11 Micro-X Marking D MMIC marking CODE c4 CGY41

sma kx3

Abstract: GaAs Amplifier Micro-X Marking k P1dB@2GHz · High P1dB of +14.1dBm@6.0GHz and GND 4 MARKING - N3 +12.7dBm@10.0GHz · Single Power , accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this
RF Micro Devices
Original
sma kx3 MMIC Amplifier Micro-X marking n5 NLB-300

MMIC Amplifier Micro-X marking n5

Abstract: P1dB@2GHz · High P1dB of +14.6dBm@6.0GHz GND 4 MARKING - N4 · Single Power Supply Operation · 50 , the furnished information is correct and accurate at the time of this printing. RoHS marking based on
RF Micro Devices
Original
NLB-400
Abstract: precautions! Type Marking Ordering Code Circuit Diagram Package (Pin Configuration) CGY41 (ql Infineon Technologies
Original

GaAs Amplifier Micro-X Marking N

Abstract: GaAs Amplifier Micro-X Marking k GND 4 MARKING - N6 · Single Power Supply Operation · 50 I/O Matched for High Freq. Use RF IN , accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this
RF Micro Devices
Original
NLB-310 MMIC Amplifier Micro-X marking g NLB-310-E NLB-310-T1 NBB-300 NBB-310
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