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Part Manufacturer Description Datasheet BUY
EP9302-IQZ Cirrus Logic Microcontroller visit Digikey
EP9302-CQZ Cirrus Logic Microcontroller visit Digikey
CS496112-CQZR Cirrus Logic DSP - CobraNet IC CobraNet Trns/AdNtwrkng Prcsr visit Digikey
CS496112-CQZ Cirrus Logic 32-Bit AUDIO DSP IC; Package/Case:144-LQFP; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes visit Digikey
CS496102-CQZR Cirrus Logic DSP - CobraNet IC CobraNet Trns/AdNtwrkng Prcsr visit Digikey
CS496122-CQZ Cirrus Logic 32-Bit AUDIO DSP IC; Package/Case:144-LQFP; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No visit Digikey

Micro-X marking "K"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , Freq. Device Dept, High Freq. & Opt. Device Works, MITSUBISHI ELECTRIC Corp. 2 Marking manner of , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package Mitsubishi
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MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A
Abstract: indicated by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch , Inspection Sealing Separation DC Test, Marking RF Test (1) RF Test (2) QAT Taping, Shipping 100% Test, Ta Mitsubishi
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low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v GD-32 HEMT marking K MGF4941CL
Abstract: Measurements at Room Temperature 2.9 Marking 2.10 External Visual Inspection 2.11 Review of Final , Measurements at Room Temperature 2.9 Marking 2.11 Review of Final Production Tests Release for Burn-In , Burn-In (if specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking 2.11 Review , Measurements at Room Temperature 2.9 Marking 2.10 Dimension Check 2.11 Review of Final Production Tests Siemens
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BAT14 BXY42 BFY180 BFY193 BFY405 CFY25 GaAs Amplifier Micro-X Marking k GaAs Amplifier Micro-X CFY66 BFY40 Microwave Semiconductors BAT15 BAS40
Abstract: Measurements at Room Temperature 2.9 Marking 2.10 External Visual Inspection 2.11 Review of Final , Measurements at Room Temperature 2.9 Marking 2.11 Review of Final Production Tests Release for Burn-In , Burn-In (if specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking 2.11 Review , Measurements at Room Temperature 2.9 Marking 2.10 Dimension Check 2.11 Review of Final Production Tests Siemens
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CLY29 CLY27 CLY30 Silicon Bipolar Transistor MICRO-X LNA ku-band microwave fet IC gaas fet micro-X Package MWP-35 CLY38 MWP-25
Abstract: and Gross Leak Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking , Measurements at Room Temperature 2.9 Marking 2.11 Review of Final Production Tests Release for Burn-In , ) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialization 2.11 Review of , Marking, Serialization 2.10 Dimension Check 2.11 Review of Final Production Tests Release for Burn-In Infineon Technologies
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MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 guide selection microwave transistors BFy 90 transistor transistor C 5611 EHA07482 EHA07483 EHA07484 EHA07485 EHA07486 EHA07487
Abstract: Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Gate to source Mitsubishi
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AEC-Q101
Abstract: is a RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , Inspection Chip Separation Die / Wire bonding Internal Visual Inspection Sealing Separation DC Test, Marking Mitsubishi
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RO4350B max current transistor "micro-x" "marking" 3 RO4350B
Abstract: Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking External Visual , Marking 2.11 Review of Final Production Tests Release for Burn-In §3 Burn-In and Electrical , specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.11 Review of , specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.10 Dimension Infineon Technologies
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SIEMENS MICROWAVE RADIO 8 GHz x-band power transistor MSC Microwave MMIC Amplifier Micro-X marking D CGY40 Micro-X marking "Fp"
Abstract: the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Mitsubishi
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MGF4963BL
Abstract: the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Mitsubishi
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MGF4964BL
Abstract: compliance is indicated by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Mitsubishi
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MGF1941AL rogers* RO4003C mgf1941 137 marking Micro-X gaas fet micro-X
Abstract: compliance is indicated by the letter â'Gâ' after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol Mitsubishi
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Abstract: Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking External Visual , Marking 2.11 Review of Final Production Tests Release for Burn-In §3 Burn-In and Electrical , specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.11 Review of , specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialisation 2.10 Dimension Infineon Technologies
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microwave transistor bfy193 HPAC140 infineon radar micro-x 420 BFY420
Abstract: Marking 2.9 External Visual inspection 2.11 Review of Final Production Tests Delivery ~| §2 , Temperature 2.8 2,9 Marking 2.11 Review of Final Production Tests Release for Burn-In Bum-ln and Electrical , Measurements at Room Temperature 2.9 Marking, Serialization 2.11 Review of Final Production Tests Release for , 2.8 2.9 Marking, Serialization 2.10 Dimension Check 2.11 Review of Final Production Tests Release for -
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INFINEON DIODE BAS 70 GaAs Amplifier Micro-X Marking N
Abstract: VXX 3 4 X2 X3 X3 Y1 Y2 Y1 Z Z2 Z Z1 Z1 Z2 Device Marking V: Part number XX , E E1 B B1 e e1 C e e1 F H Device Marking K: Part number XXX: Lot number Pin # 1 2, 4 EiC
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Y1 SOT-89 ECG050 ECG-050 1000MH 100MH 2000MH 3000M
Abstract: sensitive device, observe handling precautions! 4 3 1 2 Type Marking Ordering Code Infineon Technologies
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Amplifier Micro-X "marking code" D MMIC Amplifier Micro-X marking 11 Micro-X Marking D MMIC marking CODE c4 CGY41
Abstract: P1dB@2GHz · High P1dB of +14.1dBm@6.0GHz and GND 4 MARKING - N3 +12.7dBm@10.0GHz · Single Power , accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this RF Micro Devices
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MMIC Amplifier Micro-X marking n5 sma kx3 NLB-300
Abstract: P1dB@2GHz · High P1dB of +14.6dBm@6.0GHz GND 4 MARKING - N4 · Single Power Supply Operation · 50 , the furnished information is correct and accurate at the time of this printing. RoHS marking based on RF Micro Devices
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NLB-400
Abstract: precautions! Type Marking Ordering Code Circuit Diagram Package (Pin Configuration) CGY41 (ql Infineon Technologies
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Abstract: GND 4 MARKING - N6 · Single Power Supply Operation · 50 I/O Matched for High Freq. Use RF IN , accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this RF Micro Devices
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NLB-310 NLB-310-T1 NLB-310-E NBB-400 NBB-310 NBB-300
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