NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MICROSEMI CORP/ MICRO SbE J> biis-ìo? oQomi? saß mnaL MICRO QUALITY / SEMICONDUCTOR. INC Fast Recovery High Voltage Power Rectifier h2613 series High Power Avalanche Grade Junctions Fast trr High Purity Epoxy Encapsulated LTR. INCHES MILLIMETERS A .05 1,27 B .60 15,24 C 1.00 mm 25,40 min D .40 10,16 Inch tolerances .XX = ± .02, .XXX = ± .005 RATINGS SYMBOL H2613-6 H2613-6 H2613-6 H2613-6 H2613-10 H2613-10 , , and lnR = - 25mA (Figure 2) t. 250 nsec 213 KICROSEMI CORP/ MICRO SbE D â- bllS^D? 0001416 M1M ... | OCR Scan |
2 pages, |
H2613-10 H2613-6 Micro Quality Semiconductor h261 datasheet abstract |
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| Abstract: NICROSEfll CORP/ MICRO SbE ]> â- bllSTO? 00G13ti7 ... | OCR Scan |
2 pages, |
VHE1408 VHE1407 VHE1406 VHE1405 Micro Quality Semiconductor datasheet abstract |
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| Abstract: MICRO QUALITY / SEMICONDUCTOR, INC High Voltage Diode H1153 H1153 Designed for High Temperature Operation Low RFI/EMI LTR. INCHES MILLIMETERS A .360 Dia. 9,14 Dia. B .50 Dia. 12,70 Dia. C 3.7 94 D 1.18 Dia. 29,97 Dia. E .4 10,2 F .750 19,05 G .050 1,27 H .60 Dia. 15,24 I .40 10,16 Dimensional Tolerances .X ± .1, .XX ± .02, .XXX ± .005 inch. RATING SYMBOL UNITS Repetitive Peak Reverse Voltage See Fig. 1 & 2 Vrrm 45 KV Average Forward Current (Fig. 1) Ifiav) 2.2 mA F'eak Surge Current, V2 Cycle at ... | OCR Scan |
2 pages, |
H1153 H1153 abstract |
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| Abstract: MICROSEMI CORP/ MICRO SbE T> m blLSIO? DDD1323 DDD1323 b3fl â- MflL / MICRO QUALITY / SEMICONDUCTOR, INC Medium Current Silicon Rectifiers GS4 Series 50-600V Vrrm Ratings Glass Passivateci High Surge Current Standard D0203AA D0203AA Case (Formerly D04) LTR. INCHES MILLIMETERS A ,265-.424 6,74-10,76 B .060-.095 1,53-2,41 C .250 MAX. 6,35 MAX. D .075-. 175 1,91-4,44 E â- 422-.453 10,72-11,5 F .405 MAX. 10,28 MAX. G , 39 MICROSEMI CORP/ MICRO SbE TYPICAL FORWARD VOLTAGE OROP VS FORWARD CURRENT AT VARIOUS ... | OCR Scan |
2 pages, |
GS46 GS44 GS42 GS41 GS405 DDD1323 D0-203AA 100-C D0203AA DDD1323 abstract |
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| Abstract: MICROSEMI CORP/ MICRO SbE T> â- LllSID? GODIMI 70S HH(3L / -FOt-ift MICRO QUALITY / SEMICONDUCTOR, INC High Voltage Power Rectifier* h2612 series High Power Avalanche Grade Silicon Epoxy Encapsulated High Purity Epoxy MAXIMUM RATINGS (At TA = 25'C unless otherwise noted) RATINGS SYMBOL H2612-8 H2612-8 H2612-10 H2612-10 H2612-12 H2612-12 UNITS Peak Reverse Voltage V„„ 8 10 12 KV Peak Surge Forward Current, Va cycle @ 60 Hz , .005 Inch. 211 MICROSEMI CORP/ MICRO 2 < ie Z o z z uj oc ie D O uj O oc 3 U) ShE D â- ... | OCR Scan |
2 pages, |
H2612-8 H2612-12 H2612-10 h261 datasheet abstract |
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| Abstract: MICROSEni CORP/ MICRO 5bE D â- bll5T07 GÃœ014Ã-7 â- MÛL / t-O2>- [S MICRO QUALITY / SEMICONDUCTOR, INC Fast Recovery High Voltage Power Rectifier Subassembly Diode H2967 H2967 Series Fast Recovery Avalanche Grade Junctions 2 Amps DC Forward Current The H2967 H2967 subassembly diode is designed for use in building high voltage power rectifier assemblies. These diodes do not require resistors or capacitors to , Recovery Time, lF = 1 Amp, Ir = - 2 Amp, lRn = .5 Amp t. 200 nsec 203 MICROSEMI CORP/ MICRO c S S «0 e ... | OCR Scan |
2 pages, |
shell diala SHELL DIALA D H2967 H2967 abstract |
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| Abstract: MICROSEMI CORP/ MICRO 5bE D â- bllSTQ? OQQ1SD1 031 MICRO QUALITY / SEMICONDUCTOR. INC IflÃ-L High Voltage Multiplier Diode H1771 H1771 Aluminum Bonded Uniform Chip-to-chip Recovery Useful For Integrated Flyback Transformers & Voltage Multipliers LTR. INCHES MILLIMETERS A .020 Dia. ,508 Dia. B .4 10,2 C .82 Min. ,21 in. D .10 Dia. 2,54 Dia. A J„, ,-r 'I- -C - -1 il- T 8 *l t RATINGS SYMBOL , , pressurized nitrogen, Freon TF vapor, epoxy, or other plastic encapsulant. 217 niCROSEHI CORP/ MICRO SbE P ... | OCR Scan |
2 pages, |
flyback transformers H1771 H1771 abstract |
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| Abstract: MICROSEIII CORP/ MICRO SbE D â- tillSTG? GÃœG137S G137S T3b WÊML / -r- 03-a i MICRO QUALITY / SEMICONDUCTOR, INC 50 Amp Epitaxial High Efficiency Rectifiers Low Thermal Resistance Extremely Low Leakage at High Temperature High Surge Capability Very Fast Switching Speeds Glass Passivateci Standard D05 Case JEDEC Package 203ÀB (formerly DO-5) DIM. MILLIMETERS INCHES Min. Max. Min. Max. A 10 , MICROSEMI CORP/ MICRO TYPICAL FORWARD CHARACTERISTICS 5bE D 3 U U U W INSTANTANEOUS FORWARD VOLTAGE - ... | OCR Scan |
2 pages, |
VHE808 VHE807 VHE806 VHE805 100-C V4-28 G137S G137S abstract |
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| Abstract: niCROSEMI CORP/ MICRO SbE D â- bllSTD? GÃœGIHÃ-S fibb â- MÛL / T-O I" & MICRO QUALITY / SEMICONDUCTOR, INC High Voltage Power Rectifier Subassembly Diode H2935 H2935 All Diodes Contain Controlled Avalanche Junctions 2 Amps DC Forward Current The H2935 H2935 subassembly diode is designed for use in the buildup of high voltage power rectifier assemblies. Total assembly cost is greatly reduced by the use of , submerged in Shell Dlala Oil AX electrical Insulating oil or equivalent. 201 MICROSEMI CORP/ MICRO SbE D ... | OCR Scan |
2 pages, |
SHELL DIALA D H2935 electrostatic precipitator H2935 abstract |
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| Abstract: MICROSEMI CORP/ J1ICRO 5bE D bllSTO? 0001335 3ST I n £3 L MICRO QUALITY / SEMICONDUCTOR. INC. 2 Amp Very Fast Recovery TG24, TG26, TG28, TG210 TG210 100 ns Recovery High Voltage High Junction Temperature LTR. INCHES MILLIMETERS A .048-.052 Dia. 1,22-1,32 Dia. B -190-.225 4,83-5,72 C .360-.370 9,14-9,40 D 2.65-2.75 67,3-69,9 E 1.137-1.237 28,33-31,42 Ü -WHITE BAND ON CATHODE END 1 UL , - .5A It 100 nsec 51 HICROSEMI CORP/ MICRO 5bE D bllSTO? 000133b Elb 111(3 AVERAGE FORWARD ... | OCR Scan |
2 pages, |
TG28 TG24 TG26 TG210 TG210 abstract |
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| Semiconductor Microsmd Page Design Purchasing Quality Company Jobs 's New Micro SMD News! September 21, 1998 : LMC6035 LMC6035 LMC6035 LMC6035: National Semiconductor Processes Die-Sized Dual CMOS Op Amp Application Notes AN-1112 AN-1112 AN-1112 AN-1112: Micro SMD Wafer Level Chip Scale Package www.datasheetarchive.com/files/national/htm/nsc00017-v3.htm |
National | 13/08/1999 | 7.97 Kb | HTM | nsc00017-v3.htm |
| International Rectifier - Technical Documents Reliability Reports Device Analysis Quality Reliability Reports Request For Device Analysis HEXFET ® Reliability Report - 55th Edition Small Outline SMD Reliability Report - Micro3, Micro6, Micro8, and SO-8 Microelectronic Relay Reliability Report www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd00072.htm |
International Rectifier | 06/10/1998 | 3.93 Kb | HTM | wcd00072.htm |
| ! September 27, 1999 : National Semiconductor Delivers Intial Array of 13 Analog Products in Die-sized Micro Please enable Javascript in your browser. National Semiconductor Microsmd Page Design Purchasing Quality Company Jobs Products Design Tools LM20 - 2.4V, 10uA, SC70, micro SMD Temperature Sensor LM -to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown LP2967 LP2967 LP2967 LP2967 - Dual Micropower 150 m www.datasheetarchive.com/files/national/htm/nsc00024-v2.htm |
National | 13/09/2000 | 13.33 Kb | HTM | nsc00024-v2.htm |
| Please enable Javascript in your browser. National Semiconductor Products Catalog Design Purchasing Quality Company Jobs [Information as of 11-Aug-99] National Semiconductor Products DRAM Management (8) Dynamic RAM Controller (7) Parametric Table DP8421A DP8421A DP8421A DP8421A - microCMOS Programmable 1M Dynamic RAM Controller/Driver(s) DP8422A DP8422A DP8422A DP8422A - micro www.datasheetarchive.com/files/national/htm/nsc01072-v5.htm |
National | 13/08/1999 | 9.65 Kb | HTM | nsc01072-v5.htm |
| . National Semiconductor - Parametric Table for Dynamic RAM Controller Design Purchasing Quality Company Jobs Parametric Table National Semiconductor Products Microprocessor Support DP8421A DP8421A DP8421A DP8421A microCMOS Programmable 1M Dynamic RAM DP8422A DP8422A DP8422A DP8422A microCMOS Programmable 4M Dynamic RAM www.datasheetarchive.com/files/national/htm/nsc01802-v6.htm |
National | 13/08/1999 | 15.35 Kb | HTM | nsc01802-v6.htm |
| Design Purchasing Quality Company Jobs Ball Grid Array, micro SMD and Laminate CSP Packages Ball Grid Array (X,X) micro SMD A COST-EFFECTIVE PACKAGE MINIATURIZATION SOLUTION Micro SMD (Surface-Mount Device) is a chip-size package and was developed by National Semiconductor. It is the same size as the silicon chip and is available in 4-, 5-, and 8-I/O packages. The advantages of micro SMD compared with www.datasheetarchive.com/files/national/htm/nsc01985-v2.htm |
National | 14/09/2000 | 14.84 Kb | HTM | nsc01985-v2.htm |
| | Acquisition Notice from 1990 Over ten years ago, the Sprague Semiconductor Group of Sprague Electric Company was sold to a new corporation formed to operate that business. This new semiconductor company has the name Allegro MicroSystems, Inc., a Delaware corporation. In mid-December, 1990, Allegro advised that our quality procedures, manufacturing facility and management remain the same. The Sprague capabilities. Allegro MicroSystems is well positioned to provide "building block" Cell Library design www.datasheetarchive.com/files/allegro/control/acq1990.htm |
Allegro | 02/10/2001 | 4.83 Kb | HTM | acq1990.htm |
| Please enable Javascript in your browser. National Semiconductor - AnalogMicroControllers - COP8 FAQs Design Purchasing Quality Company Jobs COP8 Design and Architecture Questions Devices Architecture © National Semiconductor Corporation Preferences . Feedback www.datasheetarchive.com/files/national/htm/nsc01098-v2.htm |
National | 13/09/2000 | 9.43 Kb | HTM | nsc01098-v2.htm |
| options SOIC, MSOP, LLP and micro SMD National Semiconductor's industry leading micro SMD packaging provides excellent, high power audio quality in the smallest form factor available Boomer Audio Amp's legendary Audio quality continues its leadership with new technologies and features .NATIONAL.COM Introduction to Audio National Semiconductor's Boomer® Audio Amplifier family is the market leader © National Semiconductor Corporation www.datasheetarchive.com/files/national/introduc.htm |
National | 27/02/2004 | 2.51 Kb | HTM | introduc.htm |
| Allegro | Employment | Quality Systems | Employment - Quality Systems Our Success Is Powered By Our People At Allegro, we know that our -signal integrated circuits and semiconductor devices rests on the talent, drive and dedication of our people. Our 30 years of semiconductor experience and over a decade of merged technologies experience has afforded us international recognition for engineering excellence, quality and innovation. Our www.datasheetarchive.com/files/allegro/employ/quality.htm |
Allegro | 02/10/2001 | 4.74 Kb | HTM | quality.htm |