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TWL6041BYFFR Texas Instruments 8-Channel High Quality Low-Power Audio Codec For Portable Applications 81-DSBGA -40 to 85 visit Texas Instruments Buy
TWL6041BYFFT Texas Instruments 8-Channel High Quality Low-Power Audio Codec For Portable Applications 81-DSBGA -40 to 85 visit Texas Instruments
ISL54405IVZ-T Intersil Corporation CD/MP3 Quality Stereo 2:1 Multiplexer with Click and Pop Elimination; TQFN16, TSSOP16, uTQFN16; Temp Range: -40° to 85°C visit Intersil Buy
ISL54405IVZ Intersil Corporation CD/MP3 Quality Stereo 2:1 Multiplexer with Click and Pop Elimination; TQFN16, TSSOP16, uTQFN16; Temp Range: -40° to 85°C visit Intersil Buy
ISL54405IRTZ Intersil Corporation CD/MP3 Quality Stereo 2:1 Multiplexer with Click and Pop Elimination; TQFN16, TSSOP16, uTQFN16; Temp Range: -40° to 85°C visit Intersil Buy
ISL54405IRTZ-T Intersil Corporation CD/MP3 Quality Stereo 2:1 Multiplexer with Click and Pop Elimination; TQFN16, TSSOP16, uTQFN16; Temp Range: -40° to 85°C visit Intersil Buy

Micro Quality Semiconductor Datasheet

Part Manufacturer Description PDF Type
GS405 Micro Quality Semiconductor Medium Current Silicon Rectifiers Scan
GS405 Micro Quality Semiconductor 12A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan
GS405A Micro Quality Semiconductor 12A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan
GS41 Micro Quality Semiconductor Medium Current Silicon Rectifiers Scan
GS42 Micro Quality Semiconductor Medium Current Silicon Rectifiers Scan
GS44 Micro Quality Semiconductor Medium Current Silicon Rectifiers Scan
GS46 Micro Quality Semiconductor Medium Current Silicon Rectifiers Scan
H1153 Micro Quality Semiconductor High Voltage Diode Scan
H1601-1 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-10 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-12 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-1.5 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-15 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-18 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-2 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-3 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-4 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-5 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-6 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
H1601-8 Micro Quality Semiconductor High Voltage, Fast Recovery Medium Current Rectifier Scan
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Micro Quality Semiconductor

Catalog Datasheet MFG & Type PDF Document Tags

flyback tv sharp

Abstract: flyback transformer tv sharp . RECTIFIER PACKAGING Packages are available in several sizes and Micro Quality Semiconductor, Inc. is always , characteristics in the rectifier itself. The epoxies or glass used to passivate Micro Quality Semiconductor, Inc , heat in creases. Micro Quality Semiconductor, Inc. rectifiers are balanced to give acceptable levels of , MICRO QUALITY / SEM IC O N D U C TO R , INC. Application Notes Design Considerations for HV , by the cali brated wax will be stated on many Micro Quality Semi conductor, Inc. data sheets
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flyback tv sharp flyback transformer tv sharp potting material used in rf SHARP FLYBACK TRANSFORMER sharp TV flyback transformer TV flyback transformer H1818 H1771 UL94V-0

H2613-10

Abstract: Micro Quality Semiconductor MICROSEMI CORP/ MICRO SbE J> biis-ìo? oQomi? saà mnaL MICRO QUALITY / SEMICONDUCTOR. INC Fast Recovery High Voltage Power Rectifier h2613 series High Power Avalanche Grade Junctions Fast trr High Purity Epoxy Encapsulated LTR. INCHES MILLIMETERS A .05 1,27 B .60 15,24 C 1.00 mm 25,40 min D .40 10,16 Inch tolerances .XX = ± .02, .XXX = ± .005 RATINGS SYMBOL H2613-6 H2613-6 H2613 , mA, lR = - 100mA, and lnR = - 25mA (Figure 2) t. 250 nsec 213 KICROSEMI CORP/ MICRO SbE D â
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H2613-10 Micro Quality Semiconductor h261

VHE1405

Abstract: VHE1406 NICROSEfll CORP/ MICRO SbE ]> â  bllSTO? 00G13ti7
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VHE1405 VHE1406 VHE1407 VHE1408 00G13 T0220

H2612-12

Abstract: h261 MICROSEMI CORP/ MICRO SbE T> â  LllSID? GODIMI 70S HH(3L / -FOt-ift MICRO QUALITY / SEMICONDUCTOR, INC High Voltage Power Rectifier* h2612 series High Power Avalanche Grade Silicon Epoxy Encapsulated High Purity Epoxy MAXIMUM RATINGS (At TA = 25'C unless otherwise noted) RATINGS SYMBOL H2612-8 H2612-10 H2612-12 UNITS Peak Reverse Voltage Vâ'žâ'ž 8 10 12 KV Peak Surge Forward Current, Va cycle @ , , .XXX ± .005 Inch. 211 MICROSEMI CORP/ MICRO 2 < ie Z o z z uj oc ie D O uj O oc 3 U) ShE
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V4-28

Abstract: 100-C MICROSEIII CORP/ MICRO SbE D â  tillSTG? GÃG137S T3b WÃML / -r- 03-a i MICRO QUALITY / SEMICONDUCTOR, INC 50 Amp Epitaxial High Efficiency Rectifiers Low Thermal Resistance Extremely Low Leakage at High Temperature High Surge Capability Very Fast Switching Speeds Glass Passivateci Standard D05 Case JEDEC Package 203Ã'B (formerly DO-5) DIM. MILLIMETERS INCHES Min. Max. Min. Max. A 10 , MICROSEMI CORP/ MICRO TYPICAL FORWARD CHARACTERISTICS 5bE D 3 U U U W INSTANTANEOUS FORWARD VOLTAGE â
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V4-28 VHE805 VHE806 VHE807 VHE808 100-C

H1153

Abstract: MICRO QUALITY / SEMICONDUCTOR, INC High Voltage Diode H1153 Designed for High Temperature Operation Low RFI/EMI LTR. INCHES MILLIMETERS A .360 Dia. 9,14 Dia. B .50 Dia. 12,70 Dia. C 3.7 94 D 1.18 Dia. 29,97 Dia. E .4 10,2 F .750 19,05 G .050 1,27 H .60 Dia. 15,24 I .40 10,16 Dimensional Tolerances .X ± .1, .XX ± .02, .XXX ± .005 inch. RATING SYMBOL UNITS Repetitive Peak Reverse Voltage See Fig. 1 & 2 Vrrm 45 KV Average Forward Current (Fig. 1) Ifiav) 2.2 mA F'eak Surge Current, V2
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100-C

Abstract: DDD1323 MICROSEMI CORP/ MICRO SbE T> m blLSIO? DDD1323 b3fl â  MflL / MICRO QUALITY / SEMICONDUCTOR, INC Medium Current Silicon Rectifiers GS4 Series 50-600V Vrrm Ratings Glass Passivateci High Surge Current Standard D0203AA Case (Formerly D04) LTR. INCHES MILLIMETERS A ,265-.424 6,74-10,76 B .060-.095 1,53-2,41 C .250 MAX. 6,35 MAX. D .075-. 175 1,91-4,44 E â 422-.453 10,72-11,5 F .405 MAX. 10 , Electronic-Library Service CopyRight 2003 39 MICROSEMI CORP/ MICRO SbE TYPICAL FORWARD VOLTAGE OROP VS FORWARD
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D0-203AA

flyback transformers

Abstract: MICROSEMI CORP/ MICRO 5bE D â  bllSTQ? OQQ1SD1 031 MICRO QUALITY / SEMICONDUCTOR. INC IflÃL High Voltage Multiplier Diode H1771 Aluminum Bonded Uniform Chip-to-chip Recovery Useful For Integrated Flyback Transformers & Voltage Multipliers LTR. INCHES MILLIMETERS A .020 Dia. ,508 Dia. B .4 10,2 C .82 Min. ,21 in. D .10 Dia. 2,54 Dia. A Jâ'ž, ,â'"r 'I- -C - -1 ilâ'" T 8 *l t RATINGS , CORP/ MICRO SbE P bllSIO? D0G1SÃ5 77S â  I1ÛL 3 CL I-g oc UJ s! 5 3 TYPICAL DERATING IN A
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flyback transformers 40OVDC
Abstract: MICROSEMI CÃRP/ MICRO HERB SbE D â  bllS'lQ? 0Q01347 071 « M à L T -2 -3 -O T MICRO QUALITY / SEMICONDUCTOR, INC. High Efficiency Rectifier Bridges 10 Amp., 50-200V Designed for High Frequency Switching Power Supply Applications Extremely Low Leakage at High Temperatures High Surge Capability Low Cost Epoxy Encapsulation Glass Passivation Metal Mounting Pad to , 30nS 5.0\iA @ Tj = 25®C 150nA @ Tj = 150®C 75 pf 2000VDC 63 MICROSEMI CORP/ MICRO -
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VJ048H VJ14BH VJ24SH 0DD134

VHE205

Abstract: VHE210 riICROSEIII CORP/ MICRO 5bE D bllS^G? GGD1341 hS3 IMÛL MICRO QUALITY / SEMICONDUCTOR, INC 2 Amp Epitaxial High Efficiency Rectifiers 50 Volt, 100 Volt, 150 Volt and 200 Volt VRRM Extremely Low Leakage at High Temperature High Surge Capability Very High Switching Speeds Minimum Sized, Low Cost Epoxy Encapsulation Glass Passivated LTR. INCHES MILLIMETERS A â 030-.034 Dia. ,76-,86 Dia. B â 10-.107 Dia. 2,54-2,72 Dia. C â 185-.205 4,70-5,21 D 2.1-2.2 53,3-55,9 E .9-1.1 22,9-28
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VHE205 VHE210 VHE215 VHE220 10CTC

TG210

Abstract: TG26 MICROSEMI CORP/ J1ICRO 5bE D bllSTO? 0001335 3ST I n £3 L MICRO QUALITY / SEMICONDUCTOR. INC. 2 Amp Very Fast Recovery TG24, TG26, TG28, TG210 100 ns Recovery High Voltage High Junction Temperature LTR. INCHES MILLIMETERS A .048-.052 Dia. 1,22-1,32 Dia. B -190-.225 4,83-5,72 C .360-.370 9,14-9,40 D 2.65-2.75 67,3-69,9 E 1.137-1.237 28,33-31,42 à -WHITE BAND ON CATHODE END 1 UL , To - .5A It 100 nsec 51 HICROSEMI CORP/ MICRO 5bE D bllSTO? 000133b Elb 111(3 AVERAGE FORWARD
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TG26 TG24 TG28

H1651-15

Abstract: H1651-3 MICROSEfll CORP/ MICRO SbE D â  bllS'iO? OGG14Ã"1 HQ â  11 (3L / MICRO QUALITY / SEMICONDUCTOR. INC High Voltage, Medium Current Rectifier H1651 Series 1 kv to 18 kv v, Avalanche Grade Junctions High Voltage Medium Current MAXIMUM RATINGS (At TA = 25JC unless otherwise noted) MOSI Part No. Package Style Repetitive Peak Reverse Voltage Vrrm Average Forward Current (Fig. 1) IflAV) RMS Forward Current I FIRMS) Non-Repetitive Peak Surge Current V2 Cycle @ 60 Hz IfSM Forward Voltage @ lF = 100mA VF
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H1651-1 H1651-2 H1651-3 H1651-4 H1651-5 H1651-6 H1651-15 30KV rectifier 180kV

VH048H

Abstract: VH248H MICRO QUALITY / SEMICONDUCTOR. INC JJ RB High Efficiency Rectifier Bridges 7 Amp. Designed for High Frequency Switching Power Supply Applications Extremely Low Leakage at High Temperatures High Surge Capability Low Cost Epoxy Encapsulation Glass Passivation LTR. INCHES MILLIMETERS A .411-. 441 10,44-11,20 B .590-.610 14,99-15,49 C .137-.167 Dia. 3,48-4,24 Dia. â¡ â 295-.305 7,49-7,75 E .037-.043 Dia. ,94-1,09 Dia. F 1.0 Min. 25,4 Min. G .195-.205 4,95-5,21 MAXIMUM RATINGS (At
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VH048H VH148H VH248H

SHELL DIALA D

Abstract: shell diala MICRO QUALITY / S E M IC O N D U C TO R . INC. High Voltage Rectifier Assemblies Micro Quality Semiconductor, Inc. has designed this series of high voltage rectifier assemblies for use in medium frequency (~7KHz) switching power supplies for use with X-Ray apparatus. They would be useful in other high voltage applications within their current ratings. Each diode package contains a stack of ava lanche quality junctions. For Medium Frequency X-Ray Apparatus H2771 H2772 H2773 LTR A B C D E F G H I J INCHES 6.00
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SHELL DIALA D shell diala H2745-7

VSK51

Abstract: niCROSEMI CORP/ MICRO SbE ]> â  bllS^O? 000142S 3^1 «HÃL / -T^OS-Zl MICRO QUALITY / SEMICONDUCTOR. INC 60 Amp Schottky VSK51 150X Max Tj 45 Volts VRRM .60 Volts VF @ lF = 60 Amps @ 125°C. Very Fast Switching Speed Standard DO-5 Stud Mount Case JEDEC Package 203AB (formerly 00-5) DIM , ) VR = 35 V max dv/dt 1000 V/nS 141 MICROSEMI CORP/ MICRO 5» 800 I SbE D â  bllSTO? DGÃlM2b 226 , -( » -25 0 25 50 75 100 125 ISO TEMPERATURES FIGURE 3 142 niCROSEMI CORP/ MICRO 60 Amp
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VHE560

Abstract: 264278 MICROSEMI CORP/ MICRO SbE D â  bllSTD? GDD13bl 4m â M(2L / ~/7 MICRO QUALITY / SEMICONDUCTOR, INC 5 Amp Epitaxial High Efficiency Rectifiers 300 To 600 Volt VRRM Low Leakage High Surge Capability Ultra Fast Switching Speeds Glass Passivated ltr. inches millimeters A .048-.052 Dia. 1,22-1,32 Dia. B .20 Dia. 5,08 Dia. C .38 9,65 D 2.64-2.78 67,06-70,61 E 1.137-1.237 28,33-31,42 , niCROSEMI CORP/ MICRO DUS FORWARD CURRENT â'" AMPS e o S TYPICAL FORWARD CHARACTERISTICS
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VHE560 264278 GDD13 XXX4-005 D0013

KD 605

Abstract: QDD1370 DDDlBb^ 732 â  HÛL 20 Amp Epitaxial Center Tapped High Efficiency Rectifiers 300 To 600 Volt VRRM Low Thermal Resistance Low Leakage High Surge Capability Ultra Fast Switching Speeds Glass Passivated niCROSEm CORP/ MICRO 5bE » â  hllSRD? MICRO QUALITY / SEMICONDUCTOR. INC LTR. INCHES MILLIMETERS A 0.415 MAX. 10,54 MAX. B .108 2,74 C .248 6,3 D 0.605 MAX. 15,37 MAX. E 0.552 14,02 F 0.240 , PF 85 mCROSENI CORP/ MICRO SbE D TYPICAL FORWARD CHARACTERISTICS (PER DIOOE) 0.6 1.0 1.4 1.8
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VHE2405 VHE2406 VHE2407 VHE2408 QDD1370 KD 605 150-C

12 volt-30 amp power diode

Abstract: 15 amp 1000 Volt Diode HICROSEMI CORP/ MICRO 5bE D â  bllSIG? DQG14D3 7Sà IJ1ÛL MICRO QUALITY / SEMICONDUCTOR, INC 12 Amp Center Tapped Schottky Rectifier 150°c max td 20 Volt, 30 Volt, and 40 Volt VRRM 12 Amp Average Full Wave Output Current l0 Plastic T0220 Package These units are designed to provide an economical 12 amp center tapped dual Schottky output. They should be used in high frequency power supplies , MICROSEMI CORP/ MICRO 5bE D bllS^O? 0DD14G4 bb? â  M
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VSK12 VSK13 VSK14 12 volt-30 amp power diode 15 amp 1000 Volt Diode T-23-07

SHELL DIALA D

Abstract: shell diala MICROSEni CORP/ MICRO 5bE D â  bll5T07 GÃ014Ã7 â  MÛL / t-O2>- [S MICRO QUALITY / SEMICONDUCTOR, INC Fast Recovery High Voltage Power Rectifier Subassembly Diode H2967 Series Fast Recovery Avalanche Grade Junctions 2 Amps DC Forward Current The H2967 subassembly diode is designed for use in building high voltage power rectifier assemblies. These diodes do not require resistors or capacitors to , Recovery Time, lF = 1 Amp, Ir = â'" 2 Amp, lRn = .5 Amp t. 200 nsec 203 MICROSEMI CORP/ MICRO c S S Â
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00D11AA

electrostatic precipitator

Abstract: H2935 niCROSEMI CORP/ MICRO SbE D â  bllSTD? GÃGIHÃS fibb â  MÛL / T-O I" & MICRO QUALITY / SEMICONDUCTOR, INC High Voltage Power Rectifier Subassembly Diode H2935 All Diodes Contain Controlled Avalanche Junctions 2 Amps DC Forward Current The H2935 subassembly diode is designed for use in the buildup of high voltage power rectifier assemblies. Total assembly cost is greatly reduced by the use of , . 201 MICROSEMI CORP/ MICRO SbE D bllSTQ? QQOmab 7TE DC FORWARD CURRENT VS AMBIENT TEMPERATURE
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electrostatic precipitator
Showing first 20 results.