STY130NF20D 130NF20D - Datasheet Archive

 

N-channel 200 V, 0.010 , 130 A, Max247 STripFETTM II with fast recovery diode Power MOSFET Preliminary Data Features Type VDSS

 

STY130NF20D STY130NF20D N-channel 200 V, 0.010 , 130 A, Max247 STripFETTM II with fast recovery diode Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STY130NF20D STY130NF20D 200 V < 0.012 130 A Exceptional dv/dt capability 100% avalanche tested Application 1 Switching applications 2 3 Max247 Description This Power MOSFET is produced using STMicroelectronics' unique STripFETTM process, which is specifically designed to minimize input capacitance and gate charge. The STY130NF20D STY130NF20D offers extremely fast switching performance thanks to the instrinsic fast body diode, making the device ideal for hard switching topologies. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STY130NF20D STY130NF20D 130NF20D 130NF20D Max247 Tube January 2009 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/10 www.st.com 10 Contents STY130NF20D STY130NF20D Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 . 6 STY130NF20D STY130NF20D 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 200 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 130 A ID (1) Drain current (continuous) at TC=100 °C 75.6 A Drain current (pulsed) 520 A Total dissipation at TC = 25 °C 450 W Derating factor TBD W/°C 25 V/ns - 55 to 150 °C Value Unit TBD °C/W IDM (2) PTOT (2) dv/dt(3) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area 3. ISD 30 A, di/dt TBD A/µs, VDD 80% V(BR)DSS Table 3. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient 50 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit TBD A TBD mJ TL Table 4. Avalanche data Symbol Parameter IAR Avalanche current, repetitive or not repetitive EAS Single pulse avalanche energy (2) (1) 1. Pulse width limited by Tjmax 2. Strating Tj = 25 °C, ID = IAR, VDD = 50 V 3/10 Electrical characteristics 2 STY130NF20D STY130NF20D Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating, VDS =max rating @125 °C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±21 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 65 A 0.010 0.012 Typ. Max. Unit V(BR)DSS Table 6. Symbol gfs Ciss Coss Crss Qg Qgs Qgd 4/10 200 2 V Dynamic Parameter Test conditions Min. Forward transconductance ID = 130 A, VDS = 150 V TBD Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 9900 2000 450 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD=480 V, ID = 130 A VGS= 4.5 V (see Figure 3) 390 TBD TBD nC nC nC STY130NF20D STY130NF20D Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD ISDM(1) VSD (2) trr Qrr IRRM Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. TBD TBD TBD TBD VDD = 400 V, ID= 65 A, RG= 4.7 , VGS =10 V (see Figure 2) Unit ns ns ns ns Source drain diode Parameter Test conditions Max. Unit Source-drain current 130 A Source-drain current (pulsed) 520 A 1.6 V Forward on voltage ISD = 65 A, di/dt = 100 A/µs, VDD= 100 V, Tj=150 °C Typ. ISD = 65 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current Min. TBD TBD TBD ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/10 Test circuit STY130NF20D STY130NF20D 3 Test circuit Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped inductive load test circuit L A D G VD L=100µH S 3.3 µF B 25 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform AM01471v1 Figure 7. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 6/10 0 10% AM01473v1 STY130NF20D STY130NF20D 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 7/10 Package mechanical data Table 9. STY130NF20D STY130NF20D Max247 mechanical data mm Dim. Min. Typ. Max. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 Figure 8. 0094330_Rev_D 8/10 Max247 drawing STY130NF20D STY130NF20D 5 Revision history Revision history Table 10. Document revision history Date Revision 27-Jan-2009 1 Changes First release 9/10 STY130NF20D STY130NF20D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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