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Part Manufacturer Description Datasheet BUY
846793-2 TE Connectivity Ltd RECPT, MARKED visit Digikey
521207-3 TE Connectivity Ltd HSG POSI-LOCK MARK III visit Digikey
174879-2 TE Connectivity Ltd 1 POS HSG MARK II+ visit Digikey
3-1546310-1 TE Connectivity Ltd 6P .563 DR Barrier, Marked visit Digikey
3-1546310-9 TE Connectivity Ltd 4P .563 DR Barrier, Marked visit Digikey
1986474-4 TE Connectivity Ltd 503SI BZ/4 Marking Strip visit Digikey

Marking JD

Catalog Datasheet MFG & Type PDF Document Tags

KRA724U

Abstract: Package mark JD SEMICONDUCTOR KRA724U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JD KRA724U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index. Note) * Lot No. marking method Character arrangement , ) H (8) I (9) J (0) Year Marking (Week) Periode (Year) 1 st Year (2006) 01
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Package mark JD

marking jd

Abstract: marking je Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Diodes BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW (Tamb=25) Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAV99T Marking: JE unless otherwise specified) Test
Transys Electronics
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marking jd marking je marking A2

DIODE marking A2

Abstract: marking A2 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW (Tamb=25) Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAV99T Marking: JE unless otherwise specified
Jiangsu Changjiang Electronics Technology
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DIODE marking A2 A2 marking diode A2 marking JD marking cd diode JD
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE Maximum Ratings @Ta=25â"ƒ Parameter Symbol Limit Unit Reverse voltage VR 85 V Forward current IO 75 mA Forward power dissipation PD 150 mW Junction temperature Tj Jiangsu Changjiang Electronics Technology
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KRA724E

Abstract: JD13 SEMICONDUCTOR KRA724E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JD KRA724E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index. Note) * Lot No. marking method Character arrangement , ) H (8) I (9) J (0) Year Marking (Week) Periode (Year) 1 st Year (2006) 01
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JD13
Abstract: Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulate Diodes BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW (Tamb=25â"ƒ) Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55â"ƒ to +150â"ƒ BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25â"ƒ Parameter Symbol BAV99T Marking: JE unless otherwise specified) Test Transys Electronics
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BAV99T

Abstract: BAV70T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Diodes BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE Maximum Ratings @TA=25 Parameter Symbol Limits Unit Reverse voltage VR 85 V Forward current IO 75 mA Forward power dissipation PD 150 mW Junction temperature
Jiangsu Changjiang Electronics Technology
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marking A2

Abstract: DIODE marking A2 BAS16T/BAW56T/BAV70T/BAV99T BAS16T/BAW56T/BAV70T/BAV99T 1.60 1.00 SWITCHING DIODE 0.20 1.60 FEATURES 0.30 Power dissipation 150 PD: 0.50 mW (Tamb=25) 0.81 Forward Current IF: 75 m A Reverse Voltage 85 V VR: Operating and storage junction temperature range SOT-523 TJ, Tstg: -55 to +150 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAV99T Marking: JE unless otherwise specified) Test
WEJ Electronic
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Abstract: MCC Features · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAS16T BAW56T BAV70T BAV99T 150mW 85Volt Switching Diode Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance BAS16T Marking : A2 BAW56T Marking : JD BAV70T Marking : JJ BAV99T Marking : JE SOT-523 A D Maximum Ratings · · Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C B G C Electrical Micro Commercial Components
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BAS16T/BAW56T BAV70T/BAV99T
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAS16T BAW56T BAV70T BAV99T 150mW 85Volt Switching Diode Features · · · · Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance BAS16T Marking : A2 BAW56T Marking : JD BAV70T Marking : JJ BAV99T Marking : JE SOT-523 A D Maximum Ratings · · Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C B G Micro Commercial Components
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smd marking JD

Abstract: MARKING 60 SOT-89 JD ns Rise time tr Turn-off delay time Fall time VDD=-15V,ID=-250mA RL=60 Marking Marking JD www.kexin.com.cn 1 Kexin
Kexin
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2SJ287 smd marking JD MARKING 60 SOT-89 JD FET MARKING KEXIN SOT89 FET marking

CH721UGP

Abstract: CHENMKO ENTERPRISE CO.,LTD CH721UGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * High speed switching SC-88/SOT-363 FEATURE * Small surface mounting type. (SC-88/SOT-363) * Low VF and low IR * Three diodes in parallel installation (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 CONSTRUCTION (4) 0.15~0.35 (3) 1.15~1.35 * Silicon epitaxial planar MARKING * JD 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. (6) (4) (1) CIRCUIT
Chenmko Enterprise
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Abstract: CHENMKO ENTERPRISE CO.,LTD CH721UPT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * High speed switching SC-88/SOT-363 FEATURE * Small surface mounting type. (SC-88/SOT-363) * Low VF and low IR * Three diodes in parallel installation (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 CONSTRUCTION * Silicon epitaxial planar (4) 0.15~0.35 (3) 1.15~1.35 MARKING * JD 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. (6) (4) (1) CIRCUIT Chenmko Enterprise
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Abstract: BAW56 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching dual diode with common anode. ♦ This diode is also available in other configurations including: a single diode with type designation BAL99, a dual anode to cathode with type designation BAV99, and a dual common cathode with type designation BAV70. _ MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) Marking JD -
OCR Scan
Abstract: ) Dimensions ininches inches (millimeters) Marking JD Mechanical Data Case: SOT-23 Plastic Package General Semiconductor
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E8/10K
Abstract: Dimensions in mm BAS16T Marking: A2 BAW56T Marking: JD BAS70T Marking: JJ BAV99T Marking: JE , : Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: See Diagram Weight: 0.002 grams (approx Diodes
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DS30260 BAS16T-7 BAW56T-7 BAV70T-7 BAV99T-7 3000/T

BAS16T

Abstract: sot-523 ba Plastic-Encapsulate Diodes Elektronische Bauelemente Surface Mount Switching Diodes Marking BAS16T Marking: A2 BAW56T Marking: JD Typical Characteristics IF, INSTANTANEOUS FORWARD CURRENT (A) IF , 100 BAV99T Marking: JE BAS16T/BAW56T/BAV70T/BAV99T 300 0 BAV70T Marking: JJ 150
SeCoS
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J-STD-020A sot-523 ba Diode BA 100 W5* MARKING BAS16T/BA W56T/BA V70T/BA

715mV

Abstract: MCC TM Micro Commercial Components BAS16T BAW56T BAV70T BAV99T omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features · · Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 BAS16T Marking : A2 BAW56T BAV70T Marking : JD Marking : JJ 150mW 85Volt Switching Diode BAV99T Marking : JE SOT-523 Maximum Ratings A Operating
Micro Commercial Components
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715mV
Abstract: (Sn) Lead Finish 1 2 1 BAV70T Marking: JJ BAW56T Marking: JD 2 BAV99T Marking , serviceability of the diode may be impaired. Electrical Symbol & Marking Codes: Specification Features Tak Cheong Electronics
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TCBAT42WS DB-243 ED-7500A SC-75A DB-100

BAL99

Abstract: BAV70 . 0.008 g Marking JD 3 Top View 1 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings
General Semiconductor
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