MX29LV400C MX29LV800C MX29LV160C MX29LV400B/MX29LV800B/MX29LV160B PM1300

MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES · Byte/Word mode switchable: -

MX29LV400C MX29LV400C T/B MX29LV800C MX29LV800C T/B MX29LV160C MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES · Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 (MX29LV400C MX29LV400C) - 1,048,576 x8 / 524,288 x16 (MX29LV800C MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C MX29LV160C) · Sector Structure - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C MX29LV400C), 64K-Byte x 15 (MX29LV800C MX29LV800C), 64K-Byte x 31 (MX29LV160C MX29LV160C) - Provides sector protect function to prevent program or erase operation in the protected sector - Provides chip unprotect function to allow code changing - Provides temporary sector unprotect function for code changing in previously protected sector · Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations · Latch-up protected to 250mA from -1V to Vcc + 1V · Low Vcc write inhibit : Vcc