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Part : MWS5114D3X Supplier : Harris Semiconductor Manufacturer : Bristol Electronics Stock : 99 Best Price : - Price Each : -
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MWS5114 Datasheet

Part Manufacturer Description PDF Type
MWS5114 Harris Semiconductor 1024-Word x 4-Bit LSI Static RAM Original
MWS5114 Intersil 1024-Word x 4-Bit LSI Static RAM Original
MWS5114 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MWS5114-1 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MWS5114-2 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MWS5114-3 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MWS5114-5 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MWS5114-5D N/A IC Datasheet (Short Description and Cross Reference Only) Scan
MWS5114-5E N/A IC Datasheet (Short Description and Cross Reference Only) Scan
MWS5114D N/A IC Datasheet (Short Description and Cross Reference Only) Scan
MWS5114D1 Intersil 1024-Word x 4-Bit LSI Static RAM Original
MWS5114D1 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MWS5114D2 Intersil 1024-Word x 4-Bit LSI Static RAM Original
MWS5114D2 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MWS5114D2Z Intersil IC SRAM CHIP ASYNC SINGLE 5V 4KBIT 1KX4 250NS 10SBDIP Original
MWS5114D3 Intersil 1024-Word x 4-Bit LSI Static RAM Original
MWS5114D3 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MWS5114D3X Intersil 1024-Word x 4-Bit LSI Static RAM Original
MWS5114D3X Intersil 1024-Word x 4-Bit LSI Static RAM Original
MWS5114D3X N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

MWS5114

Catalog Datasheet MFG & Type PDF Document Tags

2114 Ram pinout 18

Abstract: 9114 RAM CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 SYMBOL VO (V) VIN (V) VDD (V) MIN , ) CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 PARAMETER SYMBOL VO (V) VIN (V , MWS5114E1 0oC to +70oC MWS5114D3 MWS5114D3X MWS5114D2 MWS5114D1 0oC to +70oC PACKAGE , ) MIN MWS5114-2 MWS5114-1 (NOTE 2) TYP MAX (NOTE 1) MIN (NOTE 2) TYP MAX , 50 µA MWS5114-2 2 - - 25 50 µA MWS5114-1 2 - - 60 125 µA
Intersil
Original
MWS5114E3 MWS5114E2 MWS5114E2X 2114 Ram pinout 18 9114 RAM 2114 static ram 2114 static ram ic ic 2114 1024-W ISO9000

2114 Ram pinout 18

Abstract: Data Retention Quiescent MWS5114-3 MWS5114-2 MWS5114-1 Chip Deselect to Data Retention Time Recovery to , TEMPERATURE RANGE 0°C to +70°C 200ns MWS5114E3 MWS5114E3X MWS5114D3 MWS5114D3X 250ns MWS5114E2 MWS5114E2X MWS5114D2 MWS5114D2X 300ns MWS5114E1 MWS5114E1X MWS5114D1 MWS5114D1X 0°C to +70°C Pinout 1 8L E A D , 10ns; c l = sopF and 1 m LIMITS MWS5114-3 CHARACTERISTIC SYMBOL (Note 1) MIN (Note 2) TYP MAX MWS5114-2 , Electrical Characteristics At t * = o°c to +70°c, v d d = ± 5%, Except as Noted LIMITS MWS5114-2 MIN
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OCR Scan
Abstract: Noted LIMITS CONDITIONS MWS5114-3 MWS5114-2 MAX MIN (Note 1) TYP MWS5114-1 MAX , DIP Burn-In 0°C to +70°C MWS5114E3 MWS5114E3X MWS5114E2 MWS5114E2X MWS5114E1 MWS5114E1X Ceramic DIP Burn-In 0°C to +70°C MWS5114D3 MWS5114D3X MWS5114D2 MWS5114D2X , CHARACTERISTIC SYMBOL (Note 1) MIN (Note 2) TYP MWS5114-1 MWS5114-2 MAX (Note 1) MIN , IDD 2 - - 25 50 HA MWS5114-2 2 - - 25 50 |iA MWS5114-1 2 -
OCR Scan
Abstract: Vo (V) MW S5114-2 (NOTE 1) TYP MAX 75 5 MIN 100 - MWS5114-1 (NOTE 1 , ; cycle tim e = 1ns. 4. All outputs in parallel. 6-163 MWS5114-1 (NOTE 1) TYP MAX Â , Load LIMITS MW S5114-3 PARAMETER SYMBOL (NOTE 1) MIN MW S5114-2 MWS5114-1 (NOTE , 50 HA MWS5114-1 2 - - 60 125 HA tCDR - 5 300 - - ns , MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features -
OCR Scan
S5114 S5114E3 S5114E2 S5114E2X S5114D3 S5114D3X

2114 Ram pinout 18

Abstract: MWS5114 CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 SYMBOL VO (V) VIN (V) VDD (V) MIN , ) CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 PARAMETER SYMBOL VO (V) VIN (V , MWS5114E2X MWS5114E1 0oC to +70oC MWS5114D3 MWS5114D3X MWS5114D2 MWS5114D1 0oC to +70oC , ) MIN MWS5114-2 MWS5114-1 (NOTE 2) TYP MAX (NOTE 1) MIN (NOTE 2) TYP MAX , 50 µA MWS5114-2 2 - - 25 50 µA MWS5114-1 2 - - 60 125 µA
Harris Semiconductor
Original

VDR 20-100

Abstract: MWS5114-2 Noted CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 SYMBOL VO (V) VIN (V , as Noted (Continued) CONDITIONS LIMITS MWS5114-3 MWS5114-2 MWS5114-1 PARAMETER , PARAMETER SYMBOL (NOTE 1) MIN MWS5114-2 MWS5114-1 (NOTE 2) TYP MAX (NOTE 1) MIN , - 25 50 µA MWS5114-2 2 - - 25 50 µA MWS5114-1 2 - - 60 , PACKAGE PKG. NO. MWS5114E3 MWS5114E2 MWS5114E2X MWS5114E1 0oC to +70oC PDIP Burn-In
Intersil
Original
VDR 20-100 1-888-INTERSIL

5114E

Abstract: memory ic 2114 NDITIONS MW S5114-3 Vo (V) V|N (V) o, 5 Vdd (V) 5 (NOTE 1) TYP 75 MW S5114-2 (NOTE 1) TYP 75 MWS5114-1 , (V) 0, 5 VDD (V) 5 (NOTE 1) TYP ±0.5 MW S5114-2 (NOTE 1) TYP ±0.5 MWS5114-1 (NOTE 1) TYP ±0.5 C , ) TYP MW S5114-2 (NOTE 1) MIN (NOTE 2) TYP MWS5114-1 (NOTE 1) MIN (NOTE 2) TYP PARAMETER SYMBOL , ® HARRIS S E M I C O N D U C T O R MWS5114 1024-Word x 4-Bit LSI Static RAM Description , MWS5114E1 TEM PER A TU R E RANGE 0 °C to +70°C PACKAGE PDIP Burn-In SBDIP Burn-In PKG. NO. E18.3 E18.3 D18
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OCR Scan
5114E memory ic 2114 5114E3 S5114D2 5114D3 5114D3X S5114-1
Abstract: MAX 75 100 Quiescent Device Current MWS5114-1 MWS5114-2 MWS5114-3 100 MAX , MWS5114D3 MWS5114D3X MWS5114D2 MWS5114D1 D18.3 D18.3 Pinout MWS5114 (PDIP, SBDIP) TOP VIEW , Noted (Continued) LIMITS CONDITIONS MWS5114-2 MWS5114-3 PARAMETER SYMBOL v0 (V) V , MWS5114-3 PARAMETER SYMBOL (NOTE 1) MIN MWS5114-1 (NOTE 2) TYP MAX (NOTE 1) MIN , Data Retention Quiescent MWS5114-3 Cu" tì' 1 1 MWS5114-2 2 - - 25 50 HA -
OCR Scan
Abstract: CONDITIONS MWS5114-3 MWS5114-2 MWS5114-1 Quiescent Device Current IDD - VIN (V) 0,5 , 50pF and 1 t t l Load D LIMITS MWS5114-2 MWS5114-3 CHARACTERISTIC SYMBOL (Note 1) MIN , V IDD 2 - - 25 50 ma 2 - - 25 50 HA MWS5114-2 MWS5114-1 , MWS5114E2X Ceramic DIP Burn-in 0°C to +70°C MWS5114D3 MWS5114D3X MWS5114D2 MWS5U4D2X 300ns MWS5114E1 MWS5114E1X MWS5114D1 MWS5114D1X Pinout 18 LEAD DIP TOP VIEW [7 A6 -
OCR Scan
M302571
Abstract: Random-Access Memories (RAMs) MWS5114 a6 â'" I I8 â' VDD A5 â'" 2 I7 â'" A , . The MWS5114 is supplied in 18-lead, hermetic, dual-in-line side-brazed ceram ic packages (D suffix , FUNCTION Not Selected 1 Fig. 1 â'" Functional block diagram for MWS5114 File Num ber 13 25 698 Random-Access Memories (RAMs) MWS5114 MAXIMUM RATINGS, A bsolute-M axim um Values: DC , ; cycle time = 1 ps. 'A ll outputs in parallel. Random-Access Memories (RAMs) MWS5114 DYNAM IC -
OCR Scan
92CS- 30982R RCA-MWS5114 92CM-34394 92CS-3III4R2

TC5513APL-20

Abstract: TC5514P 0.1/- 0.8 2.4 7. 5 0. 4/2 4. f/0. 4 15 MWS5114-2 g. e. 0â'"70 200 200 50 125 150 75 30 50 50 4
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OCR Scan
LH5114-6 SRM2114C TC5513APL-20 TC5514P TC5513AP-20 Srm2114 MSM5114-2RS tc5513apl 024X4 P4C150-15 P4C150-20 P4C150-25 P4C150L-10

TC5513APL-20

Abstract: TC5514P 200 75 30 50 50 4.5â'"6. 5 8 0.1/- 0.8 2.4 7. 5 0. 4/2 4. f/0. 4 15 MWS5114-2 g. e. 0â'"70 200 200
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OCR Scan
CY7C147-25 CY7C147-35 CY7C147-45 HM6147 HM6147-3 HM6147H-35 HM6147LP-3 TC5513APL20 Hitachi Scans-001

CDP18S601

Abstract: RCA cosmac 1802 CDP18S837 MWS5101 MWS5114 362 364 PD17A PD21 366 Description Floating-Point Arithmetic , CDP1821 CDP1822 CDP1823 CDP1824 MWS5114 1024 x 1 256 x 4 1 2 8 x8 32 x 8 1024 x 4 53 58 64 , RAMâ'™s MWS5101 256 x 4 MWS5114 1024x4 241 247 CD4000-Series RAMâ'™s CD4036A 4 x 8 NDRO , CDP1832 CDP1831 CDP1832 Motorola Harris 1024 x 4 RAM CDP1822* MWS5101* MWS5114 CPU 32 , CDP1821* CDP1822* MWS5101* CDP1822 CDP1822 CDP1822 CDP1822* MWS5101* MWS5114 256 x 4 RAM
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OCR Scan
CDP18S601 RCA cosmac 1802 CDP18S012 CD4061 CDP1802CD CDP1802CE CDP1800 MWS5000 CD4000 CDP18S600 CDP18S 661-S010

M5L8042

Abstract: panasonic inverter dv 707 manual CDP18S837 MWS5101 MWS5114 362 364 PD17A PD21 366 Description Floating-Point Arithmetic , CDP1821 CDP1822 CDP1823 CDP1824 MWS5114 1024 x 1 256 x 4 1 2 8 x8 32 x 8 1024 x 4 53 58 64 , RAMâ'™s MWS5101 256 x 4 MWS5114 1024x4 241 247 CD4000-Series RAMâ'™s CD4036A 4 x 8 NDRO , CDP1832 CDP1831 CDP1832 Motorola Harris 1024 x 4 RAM CDP1822* MWS5101* MWS5114 CPU 32 , CDP1821* CDP1822* MWS5101* CDP1822 CDP1822 CDP1822 CDP1822* MWS5101* MWS5114 256 x 4 RAM
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OCR Scan
M5L8042 panasonic inverter dv 707 manual ccd camera mc 7218 wiring diagram tmm2114 Toshiba DC MOTOR DGM 3520 2A panasonic inverter manual dv 707 J26487 S-17103 54070Z CH-5404
Showing first 20 results.