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MUN5311DW1T1G ON Semiconductor Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL visit Digikey Buy
SMUN5311DW1T1G ON Semiconductor Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL visit Digikey Buy

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MUN5311DW1T1 Datasheet

Part Manufacturer Description PDF Type
MUN5311DW1T1 E-Tech Electronics Dual Bias Resistor Transistors Original
MUN5311DW1T1 Leshan Radio Company Dual Bias Resistor Transistors Original
MUN5311DW1T1 Motorola Dual Bias Resistor Transistors Original
MUN5311DW1T1 On Semiconductor Bias Resistor Transistor Original
MUN5311DW1T1 On Semiconductor Dual Bias Resistor Transistor Original
MUN5311DW1T1 On Semiconductor Dual Bias Resistor Transistors Original
MUN5311DW1T1 On Semiconductor MUN5311 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN, BIP General Purpose Small Signal Original
MUN5311DW1T1/D On Semiconductor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Original
MUN5311DW1T1-D On Semiconductor Dual Bias Resistor Transistors NPN and PNP Silicon Original
MUN5311DW1T1G On Semiconductor Small Signal Bias Resistor Transistor SC88, (SOT363) Complementary NPN & PNP 50V Original
MUN5311DW1T1G On Semiconductor Dual Bias Resistor Transistors Original
MUN5311DW1T1G On Semiconductor Small Signal Bias Resistor Transistor SC88, (SOT363) Complementary NPN & PNP 50V; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Original
MUN5311DW1T1G On Semiconductor MUN5311 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, SC-70, 6 PIN, BIP General Purpose Small Signal Original
MUN5311DW1T1 Series Motorola NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Original

MUN5311DW1T1

Catalog Datasheet MFG & Type PDF Document Tags

3050H

Abstract: dual npn sot-363 Resistor Network MUN5311DW1T1 Series The BRT (Bias Resistor Transistor) contains a single transistor , MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT­363 package which is ideal for low , MUN5311DW1T1 Marking 11 12 13 14 15 16 30 31 32 33 34 35 R 1(K) 10 22 47 10 10 4.7 1.0 , Package MUN5311DW1T1 SOT­363 MUN5312DW1T1 SOT­363 MUN5313DW1T1 SOT­363 MUN5314DW1T1 SOT , 50 V, I B = 0) I CEO ­ ­ 500 I EBO ­ ­ 0.5 Emitter-Base Cutoff Current MUN5311DW1T1 ­ ­
ETL Semiconductor
Original
MUN5315DW1T1 MUN5316DW1T1 3050H dual npn sot-363 MUN5330DW1T1 MUN5331DW1T1 MUN5311
Abstract: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT , : MUN5311DW1T1/D MUN5311DW1T1 Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5316DW1T1G MUN5330DW1T1 , V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 ON Semiconductor
Original

MUN5311DW1T1

Abstract: MUN5312DW1T1 MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT , Rev. 9 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series ORDERING, SHIPPING , MUN5311DW1T1 SOT-363 11 10 10 3000/Tape & Reel MUN5312DW1T1 SOT-363 12 22 22 , 50 - - Vdc OFF CHARACTERISTICS MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1
ON Semiconductor
Original

mun5330dw

Abstract: them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the , , 7 inch/3000 Unit Tape and Reel. MUN5311DW1T1 SERIES Motorola Preferred Devices CASE 419B-01 , MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 , Diodes Device Data 2-777 MUN5311DW1T1 SERIES ELECTRICAL CHARACTERISTICS (Ty\ = 25°C unless , ) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1
-
OCR Scan
mun5330dw
Abstract: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT , January, 2001 ­ Rev. 6 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 (Note 3 , (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 ON Semiconductor
Original

MUN5311DW1

Abstract: MUN5311DW1T1 Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 Series The BRT (Bias Resistor , integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed , °C/W 2. FR­4 @ 1.0 x 1.0 inch Pad MUN5311dw­1/13 LESHAN RADIO COMPANY, LTD. MUN5311DW1T1 , MUN5311DW1T1 SOT­363 MUN5312DW1T1 SOT­363 MUN5313DW1T1 SOT­363 MUN5314DW1T1 SOT­363 MUN5315DW1T1 (Note , ­ ­ 0.5 Emitter-Base Cutoff Current MUN5311DW1T1 ­ ­ 0.2 (V EB = 6.0 V, I C = 0
Leshan Radio Company
Original
MUN5311DW1 MUN5332DW1T1

1000 volt pnp transistor

Abstract: MUN5331DW1T1G ) MUN5311DW1T1 MUN5311DW1T1G SOT-363 SOT-363 (Pb-Free) 11 10 10 MUN5312DW1T1 MUN5312DW1T1G , MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT , , 2005 - Rev. 11 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series ORDERING , . http://onsemi.com 2 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
ON Semiconductor
Original
1000 volt pnp transistor MUN5331DW1T1G MUN5313DW1T1G MUN5314DW1T1G

MUN5311DW1T1

Abstract: MUN5312DW1T1 MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias , Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT (Bias Resistor Transistor) contains , them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the , : MUN5311DW1T1 SERIES Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1(2 , © Motorola, Inc. 1997 1 MUN5311DW1T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
Motorola
Original

MUN5311DW1T1

Abstract: MUN5312DW1T1 MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT , . 6 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN5311DW1T1 SOT , , IB = 0) V(BR)CEO 50 ­ ­ Vdc Characteristic OFF CHARACTERISTICS MUN5311DW1T1
ON Semiconductor
Original
Abstract: : MUN5311DW1T1/D MUN5311DW1T1 Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device MUN5311DW1T1 MUN5311DW1T1G MUN5312DW1T1 MUN5312DW1T1G MUN5313DW1T1 MUN5313DW1T1G MUN5314DW1T1 MUN5314DW1T1G , MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT , Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5311DW1T1 ON Semiconductor
Original

MUN5331DW1T1

Abstract: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT , Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 , Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1
ON Semiconductor
Original
MUN5337DW1T1
Abstract: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT , December, 2003 - Rev. 7 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 , , IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 ON Semiconductor
Original

MUN5311DW1T1

Abstract: MUN5311DW1T1G ) MUN5311DW1T1 MUN5311DW1T1G SOT-363 SOT-363 (Pb-Free) 11 10 10 MUN5312DW1T1 MUN5312DW1T1G , MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT , , 2005 - Rev. 11 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series ORDERING , . http://onsemi.com 2 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
ON Semiconductor
Original

MUN5313DW1T1

Abstract: MUN5314DW1T1 MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias , Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT (Bias Resistor Transistor) contains , them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the , : MUN5311DW1T1 SERIES Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1(2 , © Motorola, Inc. 1997 1 MUN5311DW1T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
Motorola
Original
k1112

MUN5331DW1T1

Abstract: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon , into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT , , 2001 ­ Rev. 6 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 (Note 3 , (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1
ON Semiconductor
Original
Abstract: MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias , MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT (Bias Resistor Transistor) contains a single , device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT-363 package , MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES Marking R1 (K) R2 (K) MUN5311DW1T1 , CHARACTERISTICS MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 -
OCR Scan

5311DW

Abstract: un5313 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN5311DW1T1/D Dual Bias , these individual com ponents by integrating them into a single device. In the MUN5311DW1T1 series, two , Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel. MUN5311DW1T1 S ER IES Motorola , VALUES: MUN5311DW1T1 SERIES Device MUN5311DW1T1 M UN5312DW 1T1 MUN5313DW 1T1 M UN5314DW 1T1 M UN5315DW , best overall value. REV 3 © Motorola, Inc. 1997 (M) MOTOROLA MUN5311DW1T1 SERIES ELECTRICAL
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OCR Scan
5311DW un5313

Transistor 2N2905A

Abstract: BC237 into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT , Unit Tape and Reel. MUN5311DW1T1 SERIES Motorola Preferred Devices 6 5 4 1 2 3 , to +150 *150 DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES Device MUN5311DW1T1 , Transistors, FETs and Diodes Device Data 2­777 MUN5311DW1T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25 , ) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1
ON Semiconductor
Original
Transistor 2N2905A BC237 applications of Transistor BC108 transistor equivalent 2n5551 transistor c-1000 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1
Abstract: MUN5213 MUN2240 4.7K/47K Package MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 ON Semiconductor
Original
MUN5211 MUN5212 MUN5214 MUN5215 MUN5216 MUN5230

philips resistor

Abstract: mosfet 4800 Resistor Transistor -Examples: EMF5XV6T5 and MUN5311DW1T1 Series Note: Crosses are provided as
Diodes
Original
LMN200B01 LMN400B01 LMN200B02 LMN400E01 EMF32 EMF33 philips resistor mosfet 4800 sot26 sot363 transistor 4800 mosfet philips data pdta Si3863DV

ISS400

Abstract: BC857BM3T5G MUN5234DW1T1 MUN5234T1 MUN5235DW1T1 MUN5235T1 MUN5236DW1T1 MUN5236T1 MUN5237DW1T1 MUN5237T1 MUN5311DW1T1 MUN5311DW1T1 Series MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1
ON Semiconductor
Original
BAS16XV2T1 BAT54CLT1 ISS400 BC857BM3T5G MPSA42 168 EMC3DXV5T5 MPSA92 168 1SS383T1 2N3819 2N3903 2N3904 2N3906 2N4401
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