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MTP8P10 Datasheet

Part Manufacturer Description PDF Type
MTP8P10 Toshiba Power MOSFETs Cross Reference Guide Original
MTP8P10 Motorola Switchmode Datasheet Scan
MTP8P10 Motorola European Master Selection Guide 1986 Scan
MTP8P10 Motorola POWER FIELD EFFECT TRANSISTOR Scan
MTP8P10 Motorola P-channel TMOS power FET. 100 V, 8 A, Rds(on) 0.4 Ohm. Scan
MTP8P10 N/A Shortform Datasheet & Cross References Data Scan
MTP8P10 N/A Semiconductor Master Cross Reference Guide Scan
MTP8P10 N/A FET Data Book Scan

MTP8P10

Catalog Datasheet MFG & Type PDF Document Tags

MTM13N50E

Abstract: P40N10 MTM8P20 MTP8P10 MTP8P10 MTP8P10 MTP8P10 MTP8P10 MTP8P10 MTP8P10 M TP12P10 M TP12P10 MTP8P10 MTP8P10 , MTM5N40 M TM8N20 M TM8N20 M TM12P10 M TM12P10 MTP8P20 M TP12N10EL M TP12N10EL MTP8P10 M TP12P10 MTP15N05E , TP5N08L M TP5N08L MTP4N40E M TP50N06E MTP6N20E M TP4N50E M TP4N50E MTP8P10 MTP8P10 MTP10N40E MTP8N20 MTP8N20 MTP12P10 MTP8P10 MTD2955 MTD2955 MTM8P20 MTM8P20 MTM8N60 MTM12P06 MTM24N50E MTM20P10 MTM24N40E
-
OCR Scan
TP2955 TP8N20 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171

MTP8P10

Abstract: relay 9v 100 ohm '¢ Source-to-Drain Diode Characterized for Use With Inductive Loads TT TMOS MTP8P10 TMOS POWER FET 8 AMPERES RDS , ?254 â¡â¡cifl710 Ã"25 «IIOTb MTP8P10 ELECTRICAL CHARACTERISTICS (Tq = 25°C unless otherwise noted , MTP8P10 b3b?S5M DDTfl?!! 7bcJ â  MOTb TYPICAL ELECTRICAL CHARACTERISTICS 1 5V 9V Tj - 2S , Temperature 200 MOTOROLA TMOS POWER MOSFET DATA 3-317 MOTOROLA SC f/STRS/R F) bflE » â  MTP8P10 b3L , 3-318 MOTOROLA SC (X5TRS/R F) bôE P â  b3b7254 0010713 531 â  PIOTb MTP8P10 o 10 0 -10 -20 VGS
-
OCR Scan
AN569 relay 9v 100 ohm 008I0 T0-204

MR918

Abstract: MJ16006A VCC = 20 Volts +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 , tr H.P. 214 OR EQUIV. P.G. ts and tf 1 µF 150 100 µF 100 MTP8P10 MTP8P10 , Figure 16. Power Derating VCE (1000 V MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR8100 MUR1100 MPF930 MUR105 +10 T.U.T. MPF930 RB2 MUR105
Motorola
Original
MJH16006A MR918 MJ16006A PK MUR1100 MTP12N10 pin configuration AN952 IC 7403 MJH16006A/D

mjw16010a

Abstract: PK MUR1100 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 RB1 MPF930 +10 RB2 MUR105 50 MJE210 1 µF 150 Voff *Tektronix AM503 , RB1 RB2 MUR105 50 11 V MTP8P10 MTP8P10 *IC *IB RB = 8.5 ts and tf , MJW16010A VCE (1000 V MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10 RB1 10
ON Semiconductor
Original
MTP12N10 P6302 247AE MJW16010A/D

MTP8p10

Abstract: TO R O LA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP8P10 P o w er Field E , I O Ô25 MOTb MTP8P10 ELECTRICAL C H A R A C TE R IS TIC S ITC = 25°C unless otherwise , MOTOROLA TMOS POWER MOSFET DATA 3-316 MO TO RO LA S: (XSTRS R F> bôE D MTP8P10 MOTb TYPICAL , 00^0715 bTS M O T b MTP8P10 SAFE OPERATING AREA INFORMATION 30 20 100 pis _ 20 I j 2 , 531 MOTb MTP8P10 C, CAPACITANCE |pF| VGS_- J_ ^ VD S GATE-TO-SOURCE OR DRAIN
-
OCR Scan
Y145M 221D-02 AND-02 314B03

MR918

Abstract: Motorola mr918 +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 , OR EQUIV. P.G. ts and tf 1 µF 150 100 µF 100 MTP8P10 MTP8P10 *IC *IB , µF MTP8P10 MTP8P10 RB1 10 mH MUR8100 MUR1100 MPF930 MUR105 +10 T.U.T
Motorola
Original
Motorola mr918

8P08

Abstract: mtp8p08 275 °C MTM8P08 MTM8P10 MTP8P08 MTP8P10 TMOS POWER FETs 8 AMPERES 'DS(on) = 0.4 OHM 80 and 100 VOLTS GO- MTM8P08 MTM8P10 CASE 1-04 TO-204AA MTP8P08 MTP8P10 CASE 221A-04 TO-220AB Designer's Data , Drain-Source Breakdown Voltage (VQS = 0, ID = 0.25 mA) MTM/MTP8P08 MTM/MTP8P10 V(BR)DSS 80 100 - Vdc Zero
-
OCR Scan
8P08 8P10 motorola a043 221A-04 T0-220

MTP12N10 pin configuration

Abstract: PD-135 +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 MUR105 , MTP8P10 MTP8P10 *IC *IB T.U.T. RB = 8.5 RL 50 V(off) adjusted to give specified , . Power Derating VCE (1000 V MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10
Motorola
Original
PD-135 driver transistor hfe 60 IC 7403 datasheet

AM503

Abstract: MJE210 +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 , OR EQUIV. P.G. ts and tf 1 µF 150 100 µF 100 MTP8P10 MTP8P10 *IC *IB , µF MTP8P10 MTP8P10 RB1 10 mH MUR8100 MUR1100 MPF930 MUR105 +10 T.U.T
Motorola
Original

MR918

Abstract: MJ16006A (sus) L = 10 mH RB2 = VCC = 20 Volts +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 , *Tektronix AM503 *P6302 or Equivalent RB2 MUR105 50 11 V MTP8P10 MTP8P10 *IC *IB , 100 µF 10 µF MTP8P10 MTP8P10 RB1 MPF930 10 mH MUR8100 MUR1100 MUR105 +10
ON Semiconductor
Original
tektronix 475 MJh-16006A

MTP12N10 pin configuration

Abstract: MTP12N10 Load Switching Drive Circuit +15 1 µF 150 100 100 µF MTP8P10 MTP8P10 RB1 A MPF930 50 MUR105 , tf 1 µF 150 100 100 µF MTP8P10 MTP8P10 RB1 A V(off) adjusted to give specified off , Figure 16. Power Derating +15 1 µF 150 100 100 µF MTP8P10 10 µF MTP8P10 RB1 MPF930 +10 MPF930 50
Motorola
Original

K 3699 transistor

Abstract: D 400 F 6 F BIPOLAR TRANSISTOR ioon U J lo o u F ^ " MTP8P10 ' r 1 VCEO(sus) L - 10 mH RB2 - oo P MTP8P10 , 'in i 100fi OR EQUIV. P.G. H Rl vcc 3 100 nF r MTP8P10 ¡2 MTP8P10
-
OCR Scan
K 3699 transistor D 400 F 6 F BIPOLAR TRANSISTOR two transistor flyback bipolar transistor td tr ts tf k 2445 transistor Tektronix AM503 MJE16106 AN951 AN875 MUR170 UR405 MUR470

MTP8N10

Abstract: mtp7n06 .Ã0AB 100 0.3 6 MTM12P10 12 204AA MTP12P10 220AB 0.4 4 MTM8P10 8 204AA MTP8P10 220AB 80 0.3 , MTP6N10 6 50 0.5 4 MTP8N10 8 75 0.4 MTP8P10* IRF522 7 40 0.33 5 MTP10N10 10 75 0.30 6
-
OCR Scan
MTH8P20 MTP12P08 MTP3N15 MTP5N15 MTP7N15 MTP8N15 mtp7n06 power mosfets to 204aa mtp25n10 MTM2P50 MTP2P50 MTM2P45 MTP2P45 218AC

P6302

Abstract: TL 3849 . Inductive Load Switching Drive Circuit 15 O- vCEO{tut) 1nF? 100m F? MTP8P10 L - 10 mH HP , ) MTP8P10 RB1 JX 1° JrMPF930 MPF930 :-K rB 2 VCE- RB2 " 0 Vqc - 20 Volts Rb i selected , and tf ipF; 1500
-
OCR Scan
TL 3849 transistor equivalent table 340F-03 MUR405 MUR4100 AR131

MJF16006A

Abstract: vqe 14e Circuit M5on fioon J 100'lF: -1 MTP8P10 VoffO â'¢Tektronix AM503 P6302 or Equivalent Scope , MTP8P10 V(0ff) adjusted to give specified off drive j-jjt-10V vcc 250 v RL 50 n Ic 5 a ibi 0.66 a 'b2 1 a Rbi 20 n rb2 4il MTP8P10 VoffO A© PHâ'"fcmï Vcc J -àUfi - I â'¢ 11 m I , P~MTP8P10 MUR8100 -W- 1 f-HR J-1 _^_MPF93ol FMPF930 â'" MTP8P10 MUR105
-
OCR Scan
MJF16006A vqe 14e wMR918 MJF16006 lr 2905 transistor TCA 700 y MJF16006A/D 33-II AN1040 C64449

MTP12N10 pin configuration

Abstract: MJ16110 20 mA +15 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 , IC 0V MUR105 250 V IC 250 Vdc RL 11 V Vin 0 MTP8P10 MTP8P10 *IC , MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR870
Motorola
Original
MJ16110 MJW16110 IRFD9123 IRFD113 equivalent pk98 MTP25N06 MJ16110/D

MJ16110

Abstract: MJW16110 150 1 µF 100 µF 100 MTP8P10 MTP8P10 RB1 MPF930 +10 RB2 MUR105 50 , MTP12N10 250 V IC RB2 MUR105 50 Vin MTP8P10 MTP8P10 *IC *IB RB = 8.5 , MAX) +15 150 1 µF 100 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR870
ON Semiconductor
Original
IRFD9120

MR918

Abstract: two transistor flyback 1 µF 150 100 µF 100 MTP8P10 MTP8P10 A +10 MPF930 RB2 50 MUR105 , IC MUR105 250 V VCE, COLLECTOR­EMITTER VOLTAGE (VOLTS) Vin MTP8P10 MTP8P10 *IC , ) 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR870 MUR170 MPF930 MUR105 +10
Motorola
Original
mje16 IRFD113 MJE16106/D

8P08

Abstract: MTP8P08 ith In d uctive Lo ad s MTM8P08 MTM8P10 MTP8P08 MTP8P10 TM O S P O W ER FE T s 8 A M P ER ES T D , -204AA °OW R0JC r 0JA 1.67 30 62.5 275 °C MTP8P08 MTP8P10 CASE 221A-04 TO-220A8 Designer's Data for , Unit V{BR)DSS MTM/MTP8P08 MTM/MTP8P10 >DSS ·g s s f ·g s s r 10 100 100 100 80 100 - Vdc ¿¿Ade
-
OCR Scan
mtp8p TQ-204AA

MJ11016 equivalent

Abstract: DIODE MOTOROLA 633 . Thermal Response VCE (1000 V MAX) 10 µF MUR8100 +15 1 µF 100 µF 150 10 mH MTP8P10 100 MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T. MUR105 50 RB2 MTP12N10 , 100 MTP8P10 MTP8P10 V(off) adjusted to give specified off drive VCC Per Fig. 17 & 18
Motorola
Original
MJW16206 MJF16206 MJ11016 equivalent DIODE MOTOROLA 633 726 MOTOROLA TRANSISTORS 2N5337 2N6191 MJW16206/D

1811P3C8

Abstract: TO247AE 150 10 mH MTP8P10 100 MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T , MJW16206 +15 1 µF ts and tf 150 100 µF 100 MTP8P10 MTP8P10 V(off) adjusted to give
Motorola
Original
1811P3C8 TO247AE 120C4 MDC1000 MR856 MUR8100E

2N5337

Abstract: 2N6191 150 10 mH MTP8P10 100 MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T , MJW16206 +15 1 µF ts and tf 150 100 µF 100 MTP8P10 MTP8P10 V(off) adjusted to give
Motorola
Original

1811P3C8

Abstract: 2N5337 150 10 mH MTP8P10 100 MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T , MJW16206 +15 1 µF ts and tf 150 100 µF 100 MTP8P10 MTP8P10 V(off) adjusted to give
Motorola
Original
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