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MTP6N60 Datasheet

Part Manufacturer Description PDF Type
MTP6N60 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original
MTP6N60 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original
MTP6N60 Motorola European Master Selection Guide 1986 Scan
MTP6N60 Motorola Switchmode Datasheet Scan
MTP6N60 N/A Shortform Datasheet & Cross References Data Scan
MTP6N60 STMicroelectronics Shortform Data Book 1988 Scan
MTP6N60E Motorola TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 ? Original
MTP6N60E On Semiconductor TMOS E-FET Power Field Effect Transistor Original
MTP6N60E Toshiba Power MOSFETs Cross Reference Guide Original
MTP6N60E N/A FET Data Book Scan
MTP6N60E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 600V, 3A, Pkg Style TO220AB Scan
MTP6N60E/D On Semiconductor TMOS POWER FET 6.0 AMPERES 600 VOLTS Original
MTP6N60E/D On Semiconductor TMOS POWER FET 6.0 AMPERES 600 VOLTS Original
MTP6N60E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Original

MTP6N60

Catalog Datasheet MFG & Type PDF Document Tags

MTP6N60

Abstract: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 s s s s s V DSS , limited by safe operating area May 1992 1/9 MTP6N60 THERMAL DATA R thj-cas e Rthj- amb Rthj , . 2 4.8 1150 160 75 Max. Unit S 1500 240 110 pF pF pF MTP6N60 ELECTRICAL , Thermal Impedance 3/9 MTP6N60 Derating Curve Output Characteristics Transfer , 4/9 MTP6N60 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature
STMicroelectronics
Original
P011G

MTP6N6

Abstract: MTP6N60 MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS s s s s s ID 600 V MTP6N60 R DS(on) < 1.2 6.8 A TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY , /9 MTP6N60 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance , 0 Typ. 2 4.8 1150 160 75 Max. Unit S 1500 240 110 pF pF pF MTP6N60 , Thermal Impedance 3/9 MTP6N60 Derating Curve Output Characteristics Transfer
STMicroelectronics
Original
MTP6N6

MTP6N60

Abstract: MTP6N6 MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS s s s s s ID 600 V MTP6N60 R DS( on) < 1.2 6.8 A TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY , 150 o C (·) Pulse width limited by safe operating area November 1996 1/9 MTP6N60 , pF pF MTP6N60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt , safe operating area Safe Operating Area Thermal Impedance 3/9 MTP6N60 Derating Curve
STMicroelectronics
Original
12 v smps

MTP6N60

Abstract: MTP6N6 Æ 7 SGS-THOMSON MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE MTP6N60 V DSS R DS(on) *d 600 V 1.2 a 6A · HIGH VOLTAGE - 600 V FOR OFF-LINE , P.O. ^stg -6 5 to 150 150 Ti June 1988 1/5 391 MTP6N60 THERMAL DATA Rthj . case , 8SOI5iOII(l,ieiiB90ioei 392 MTP6N60 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test , characteristics SCS-THOMSON 3/5 393 MTP6N60 Transconductance Static drain-source on resistance Gate
-
OCR Scan
100KH 10OA/
Abstract: ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V MTP6N60 â  . â  . . R DS(on) Id < 1 .2 , November 1996 1/9 MTP6N60 THERMAL DATA R thj-case R thj-am b R thj-am b Ti Therm al , L L LL L L Q Q Q_ _ _ C jss Coss Param eter Forward T ransconductance MTP6N60 , +0 7 SGS-THOMSON ^ 7# RiiieR®iiLii£iîR®(iaies MTP6N60 Derating Curve Output , ®iiLii£iîR®(iaies MTP6N60 Capacitance Variations Normalized Gate Threshold Voltage vs -
OCR Scan
ISOWATT22Q

TP6N60

Abstract: MTP6N6 to 150 150 1/7 319 MTP6N60 THERMAL DATA Rthj-case Rthj-am b Rthj-am b Ti Therm al R , ® T = T= = Max Rating = Max Rating x 0.8 200 1000 n n A > > MTP6N60 ELECTRICAL , 4/7 322 ^7# £ = T SGS-THOMSON 8*oMJSEnwi*)»Bi MTP6N60 Capacitance Variations , raDCWEUWTTOSWira 323 MTP6N60 Switching Safe Operating Area 0024310 Accidental Overload Area 0024320 , 2200 M F 3 .3 J"~L 6/7 Ä 7# rZZ SCS-THOMSON MUCBBOOLBCTNOBIOCS 324 MTP6N60
-
OCR Scan
TP6N60 CC36A00 GC2Q540

MTP6N60

Abstract: smps circuit diagram Æ 7 SCS-THO M SO N Räö(g»[llLli(g'ir^©R5tl(gi MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR P R E L IM IN A R Y D A TA TYPE MTP6N60 V Dss R DS(on) 1 .2 ß 600 V 6 A · HIGH , MTP6N60 THERMAL DATA R,hj . case Thermal resistance junction-case R,hj_am b Thermal resistance , 60 150 200 120 ns ns ns ns 2/5 " 7#>. 392 r= J SCS-THOMSON MTP6N60 ELECTRICAL , f Z J SCS-THOMSON 7#. 3/5 393 MTP6N60 T ransconductance Static drain-source on
-
OCR Scan
smps circuit diagram N4723
Abstract: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP6N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain â'" Source Voltage Drain â'" Gate Voltage Drain Current â'" Continuous Drain Current â'" Pulsed Gate â'" Source , : MTP6N60 Drain Source Diode Characteristics Forward On Voltage Reverse Recovery Time IS = 6.0A VGS = Semiconductor Technology
Original

TP6N60

Abstract: 6N60 November 1996 MTP6N60 THERMAL DATA R lh j-c a s e R lh j-a m b R th j-a m b Ti Therm al R , MTP6N60 Derating Curve Output Characteristics Ptoi(W ) 120 X 80 s . N \ N\ N V , Cross-over Time *T # KooeasiiiLiieiragH ioes /IT SGS-THOMSON 5/9 MTP6N60 Switching Sate , *T # RKRQiuieirftgHioes /IT SGS-THOMSON 7/9 MTP6N60 ISOWATT22Q MECHANIC AL DATA mm MI N
-
OCR Scan
6N60

irfp 950

Abstract: tsd4m450v 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218 STHV 82 5.5 125 2 1000 1000 3.5 2 TO 218 , 1000 600 1.2 3 ISOWATT 218 MTH6N60FI 3.5 40 2 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO
-
OCR Scan
SGSP479 MTP3N60 STHV82 irfp 950 tsd4m450v transistor BUZ45 SGSP369 BUZ74 IRF842 IRF842FI IRF840 IRF840FI BUZ354 BUZ45A

IRF732P

Abstract: IRF722P MTP5N18 MTP5N20 MTP5N35 MTP5N40 MTP6N08 MTP6N10 MTP6N60 MTP7N05 MTP7N12 MTP7N15 MTP7N18 MTP7N20 MTP8N08 , IRF620 IRF731 IRF730 SGSP311 SGSP311 MTP6N60 SGSP358 SGSP317 SGSP317 SGSP317 SGSP317 IRF520 IRF520
-
OCR Scan
2SK295 SGSP321 SGSP367 IRF540FI SGSP381 BUZ71 IRF732P IRF722P SGSP3055 1rfp450 MTP20N10 irf522p 2SK296 2SK308 2SK310 2SK311 2SK312

MTP2P45

Abstract: MTP4N90 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75 6 1 MTP2N55 2
-
OCR Scan
MTP2P45 MTH8P20 MTP12P08 T0204AA MTP1N95 MTP2N90 MTP4N90 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTM2P50 204AA MTP2P50 220AB MTM2P45
Abstract: Cx / i, LJ nc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP6N60 N-Channel Mosfet Transistor FEATURES â'¢ Drain Current -ID= 6A@ TC=25°C â'¢ Drain Source Voltage1 0(2) â'¢, ^f£\ /-s, : VDSs= 600V(Min) Static Drain-Source On-Resistance 1 :RDS ( on)= 1.2Q (Max) â'¢ Avalanche Energy Specified â'¢ Fast Switching â'¢ Simple Drive Requirements " ^ â"¢ u ! o S{3) !; 1 2 LGate New Jersey Semiconductor
Original

MTP6N55

Abstract: MTP2P45 Plastic TMOS Power MOSFETs â'" T0-220AB TO-220AB CASE 221A-02 Â¥ TMOS 3 VBR(DSS) (Volts) Min rDS(on) @ 'D (Ohms) (Ampi Max Device 'D(Cont) (Ampi Max PD @ Tc = 25°C (Watts) Max 1000 10 0.5 MTP1N100 1 75 7 1.5 MTP3N100 3 950 10 0.5 MTP1N95 1 7 1.5 MTP3N95 3 900 8 1 MTP2N90 2 5 2 MTP4N90 4 125 850 8 1 MTP2N85 2 75 5 2 MTP4N85 4 125 800 7 1.5 MTP3N80 3 75 750 MTP3N75 600 12 0.5 MTP1N60 1 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75
-
OCR Scan
MTP6N55 IRF843 irf8408 mtp3n6 MTP3N55 MTP1N50 MTP2N50 IRF822 IRF820

MTP3N80

Abstract: MTP1N60 Plastic TMOS Power MOSFETs â'" T0-220AB TO-220AB CASE 221A-02 Â¥ TMOS 3 VBR(DSS) (Volts) Min rDS(on) @ 'D (Ohms) (Ampi Max Device 'D(Cont) (Ampi Max PD @ Tc = 25°C (Watts) Max 1000 10 0.5 MTP1N100 1 75 7 1.5 MTP3N100 3 950 10 0.5 MTP1N95 1 7 1.5 MTP3N95 3 900 8 1 MTP2N90 2 5 2 MTP4N90 4 125 850 8 1 MTP2N85 2 75 5 2 MTP4N85 4 125 800 7 1.5 MTP3N80 3 75 750 MTP3N75 600 12 0.5 MTP1N60 1 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75
-
OCR Scan
MTP4N50 MTM1N100 MTM6N90 MTM6N60 MTM4N50 MTM7N50 MTM2N45 mtm2n50 IRF450 MTP3N50 IRF832 IRF830 MTP8N50 MTP1N45

SGSP369

Abstract: TSD4M450V 1.2 3 ISOWATT 218 MTH6N60FI 3.5 40 2 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218
-
OCR Scan
IRF831 IRF831FI SGSP364 IRF841 IRF841FI SGSP474 IRFP450fi SGSP239 sgsp579 smd hl IRF843FI

TSD4M450V

Abstract: SGSP479 1.2 3 ISOWATT 218 MTH6N60FI 3.5 40 2 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218
-
OCR Scan
IRF453 IRFP453FI BUZ41A SGS100MA010D1 TSD4M250V TSD4M351V tsd4m45 tsd4m250 BUZ41 SGSP574 IRFP453 IRF451 IRFP451

IRFP 740

Abstract: IRF 810 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218 STHV 82 5.5 125 2 1000 1000 3.5 2 TO 218
-
OCR Scan
IRFP 740 IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 MTH6N60

all mosfet equivalent book

Abstract: MOSFET FOR 100khz SWITCHING APPLICATIONS .1 s DC .2 V 5.3mV 1 V DC 2.00mV AC 1.87 MOSFET MTP6N60 di/dt = 53 A/uS s 500 MS
International Rectifier
Original
all mosfet equivalent book MOSFET FOR 100khz SWITCHING APPLICATIONS mosfet equivalent book MTP6N60 equivalent comparison of IGBT and MOSFET parallel mosfet

IRF 850

Abstract: mje13005-1 1800 600 1.2 3 TO 220 MTP6N60 6 125 2 1800 800 2 2 TO 218 STHV 82 5.5 125 2 1000 1000 3.5 2 TO 218
-
OCR Scan
TS59C11 M9306 IRF 850 mje13005-1 transistors bu 407 sgsp 369 13005 A ST24C02 TS93C46 M9346

12N60FI

Abstract: K791 PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP6N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain â'" Source Voltage Drain â'" Gate Voltage Drain Current â'" Continuous Drain Current â'" Pulsed Gate â'" Source , : MTP6N60 Drain Source Diode Characteristics Forward On Voltage Reverse Recovery Time IS = 6.0A VGS =
-
OCR Scan
2SK1723 12N60FI K791 a4n50e 2N60E k2n50 p3n90 2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118

TP8N10

Abstract: th15n20 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75 6 1 MTP2N55 2
-
OCR Scan
TP3055A TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346

P6N60

Abstract: p6n55 Cx / i, LJ nc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP6N60 N-Channel Mosfet Transistor FEATURES â'¢ Drain Current -ID= 6A@ TC=25°C â'¢ Drain Source Voltage1 0(2) â'¢, ^f£\ /-s, : VDSs= 600V(Min) Static Drain-Source On-Resistance 1 :RDS ( on)= 1.2Q (Max) â'¢ Avalanche Energy Specified â'¢ Fast Switching â'¢ Simple Drive Requirements " ^ â"¢ u ! o S{3) !; 1 2 LGate
-
OCR Scan
P6N60 p6n55 tp6n55 6N55 SITH 6n55 data
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