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Part : MTP3N60E Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
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MTP3N60 Datasheet

Part Manufacturer Description PDF Type
MTP3N60 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original
MTP3N60 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original
MTP3N60 Motorola Switchmode Datasheet Scan
MTP3N60 Motorola European Master Selection Guide 1986 Scan
MTP3N60 Motorola (MTP3N55) Power Field Effect Transistor Scan
MTP3N60 N/A Shortform Datasheet & Cross References Data Scan
MTP3N60 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MTP3N60 N/A Semiconductor Master Cross Reference Guide Scan
MTP3N60 N/A FET Data Book Scan
MTP3N60 Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan
MTP3N60 STMicroelectronics Shortform Data Book 1988 Scan
MTP3N60E Motorola TMOS E-FET High Density Power FET Original
MTP3N60E Toshiba Power MOSFETs Cross Reference Guide Original
MTP3N60E Motorola TMOS Power FET 3.0 Amperes 600 Amperes 600 Volts Scan
MTP3N60E N/A Shortform Datasheet & Cross References Data Scan
MTP3N60E N/A FET Data Book Scan
MTP3N60E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 600V, 1.5A, Pkg Style TO220AB Scan
MTP3N60E/D On Semiconductor TMOS POWER FET 3.0 AMPERES 600 VOLTS Original
MTP3N60E-D On Semiconductor TMOS E-FET High Energy Power FET N-Channel Enhanc Original
MTP3N60FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original
Showing first 20 results.

MTP3N60

Catalog Datasheet MFG & Type PDF Document Tags

MTP3N60

Abstract: MTP3N6 MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS MTP3N60 MTP3N60FI s s s s s R DS(on) ID 600 V 600 V < 2.5 < 2.5 3.9 A 2.5 A TYPICAL RDS , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value MTP3N60 V DS V DGR V GS Unit MTP3N60FI Drain-source Voltage (V GS = 0) 600 V Drain- gate Voltage (R GS = 20 k) 600 V , (·) Pulse width limited by safe operating area November 1996 1/10 MTP3N60/FI THERMAL DATA
STMicroelectronics
Original
MTP3N6 ISOWATT220 MTP3N60/FI P011G

MTP3N60

Abstract: MTP3N60FI MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS MTP3N60 MTP3N60FI s s s s s R DS( on) ID 600 V 600 V < 2.5 < 2.5 3.9 A 2.5 A TYPICAL RDS , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value MTP3N60 VD S V DG R V GS Unit MTP3N60FI Drain-source Voltage (V GS = 0) 600 V Drain- gate Voltage (R GS = 20 k) 600 V , (·) Pulse width limited by safe operating area November 1996 1/10 MTP3N60/FI THERMAL DATA
STMicroelectronics
Original

MTP3N6

Abstract: MTP3N60 MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS MTP3N60 MTP3N60FI s s s s s R DS( on) ID 600 V 600 V < 2.5 < 2.5 3.9 A 2.5 A TYPICAL RDS , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value MTP3N60 VD S V DG R V GS Unit MTP3N60FI Drain-source Voltage (V GS = 0) 600 V Drain- gate Voltage (R GS = 20 k) 600 V , o C (·) Pulse width limited by safe operating area May 1993 1/10 MTP3N60/FI THERMAL
STMicroelectronics
Original

MTP3N60FI

Abstract: ^ 7 SGS-THOMSON MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP3N60 MTP3N60FI Voss ^OS(on) ·d 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A , 1988 1/6 385 MTP3N60 - MTP3N60FI THERMAL DATA Rthj . case Thermal resistance junction-case R , ns ns *1 1 . SMEEKjRItmM'OGi Æ 7 SGS-THOMSON MTP3N60 - MTP3N60FI ELECTRICAL , MTP3N60 - MTP3N60FI Transconductance Static drain-source on resistance Gate charge vs gate-source voltage
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OCR Scan
10OKH ISQWATT220

mtp3n

Abstract: TP3N60 Si TYPE MTP3N60 MTP3N60FI SGS-THOMSON ELiOT(ö«S MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT , ) Pulse width limited by safe operating area June 1992 1/7 311 MTP3N60/FI THER M AL DATA TO , # MDonisisejsawsraiics 312 / = 7 SGS-TKOM SON MTP3N60/FI ELECTRICAL CHA RA CTERISTICS (continued) SW ITCHING ON , SNaUSSTRM KCS 313 r ; 7 SGS-THOMSON 3/7 MTP3N60/FI Thermal Impedance For ISOWATT22Q Thermal , _ MTP3N60/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage
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OCR Scan
mtp3n TP3N60 A1412 TP3N60FI TT220

mtp3n6

Abstract: )227-6005 FAX: (973) 376-8960 MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS MTP3N60 MTP3N60FI RDS(on) ID 600 V 600 V < 2.5Q < 2.5 Q. 3.9 A 2.5 A , ) S(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value MTP3N60 Unit MTP3N60FI , MTP3N60/FI THERMAL DATA TO-220 Rthj-case Thermal Resistance Junction-case Rthj-amb ISOWATT220 , - 1.5 2.6 560 90 40 Max. Unit S 800 130 55 pF pF PF MTP3N60/FI ELECTRICAL
New Jersey Semiconductor
Original
100QC
Abstract: * 5 7 SGS-THOMSON ilLiC TIK M D e® mTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER , MTP3N60 Value MTP3N60FI Unit V ds V dgr V gs Id Id Id m D rain-source Voltage (V gs = 0) D rain , November 1996 1/10 MTP3N60/ FI THERMAL DATA T O -2 20 I SO W A T T 2 2 0 R lh j - c a s e , /IT SGS-THOMSON MTP3N60/ FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol , 10 ms 100 ms n 2 4 6 8 . 2 4 -5 8 ,2 10° 101 10z 4 es , 10 ` 4il vb (' MTP3N60/ FI -
OCR Scan
MTP3N60/
Abstract: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI â  . â  . . SGS-THOMSON ¡m era©«® dss 600 V 600 V R DS(on , Symbol P aram eter V alue MTP3N60 V ds V dgr V gs Unit MTP3N60FI D rain-source V , '¢) Pulse width limited by safe operating area November 1996 1/10 MTP3N60/FI THERMAL DATA TO -220 , Unit 55 L L LL L L Q_ Q_ Q_ Ciss Coss Param eter Forward T ransconductance MTP3N60 -
OCR Scan

MTP3N6

Abstract: r r z S G S -T H O M S O N *7#TM » » E tL ie T O K f© ! MTP3N60 MTP3N60FI N - CHANNEL , ns ns ns ns L L L L LL Q . Q . Q. MTP3N60 - MTP3N60FI ELECTRICAL C HARACTERISTICS (Continued , SCS-THOMSON 3/6 387 MTP3N60 - MTP3N60FI T ransconductance Static drain-source on resistance Gate , SGS-THOMSON 388 MTP3N60 - MTP3N60FI Sw itching tim es test circu it for resistive load Sw itching tim , Jedec test circuit / I T SGS-THOMSON 5/6 389 MTP3N60 - MTP3N60FI ISO W A TT220 PACKAGE CH
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OCR Scan
100KH ATT22Q ATT22 ATT220
Abstract: , Dnc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM3N60 MTP3N55 MTP3N60 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS TMOS POWER FETs 3 AMPERES 'DS(on) = 2.5 OHMS 550 and 600 VOLTS These , = 1 IWl) MTP3N60 Unit VQS VGSM ±20 ±40 ID IDM 3 10 PD 76 0,6 Watts , MTM/MTP3N60 Zero Gate Voltage Drain Current (V[>s = Rated VDSS. VGS - 0] (Vos - 0.8 Rated VDSS New Jersey Semiconductor
Original
MTM3N90 104AA
Abstract: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain â'" Source Voltage Drain â'" Gate Voltage Drain Current â'" Continuous Drain Current â'" Pulsed Gate â'" Source , 1000 pF VDS = 25V, f = 1 MHz 300 pF 80 pF Page 1 of 2 TYPE: MTP3N60 Drain Semiconductor Technology
Original

MTM3N60

Abstract: MTP3N55 â I MTM3N60 MTP3N55 MTP3N60 TMOS POWER FETs 3 AMPERES 'DS(on) = 25 °HMS 550 and 600 VOLTS GO- Rating Symbol MTP3N55 MTM3N60 MTP3N60 Unit Drain-Source Voltage voss 550 600 Vdc Drain-Gate Voltage , /8" from case for 5 seconds Tl 275 °C MTM3N60 CASE 1-06 TQ-204AA MTP3N55 MTP3N60 CASE 221A-04 TO , CHARACTERISTICS Drain-Source Breakdown Voltage (Vqs = 0, ID = 0,25 mA) MTP3N55 MTM/MTP3N60 V(BR)DSS 550 600
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OCR Scan
AN569 p3nb 221A-04 25CC

TP3N55

Abstract: MTM3N60 MTP3N55 MTP3N60 T M O S POWER FETs 3 AMPERES r D S(on) = 2 '5 O H M S 550 and 600 VOLTS M A X , MTP3N60 600 600 Unit Vdc Vdc Vdc Vpk Ade 50 ¡xs) ± 20 ±40 3 10 75 0.6 - 6 5 to 150 Watts W/°C , nit V(BR)DSS MTP3N55 MTM/MTP3N60 dss iGSSF IGSSR 0.2 ' 100 100 550 600 - Vdc mAdc , - , ä | M TM /M TP3N 60, MTP3N55 SAFE OPERATING AREA INFORMATION 150° à 4 TP3N55 -j MTM/MTP3N60
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OCR Scan
T0-204 204AA

TP3N60

Abstract: TP3N55 e n to fa c ilita te "w o rs t c a s e " design. MOTOROLA TMOS POWER MOSFET DATA MTM/MTP3N60 , 7.5 (T yp ) - nH - MOTOROLA TMOS POWER MOSFET DATA 3*413 MTM/MTP3N60, MTP3N55 TYPICAL , /MTP3N60, MTP3N55 SAFE OPERATING AREA INFORMATION æ Z J * - rDS|oni - PACKAGE L IM IT , DATA MTM/MTP3N60, MTP3N55 C, CAPACITANCE (pF) o Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qg
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OCR Scan
p3n60 3n60 transistor 3n60 MOSFEt 3N55 3N60 MTM/MTP3N60

IRFP 740

Abstract: IRF 810 14 180 9.3 3000 500 0.4 7.9 ISOWATT 218 IRFP 450 Fi 9 70 9.3 3000 600 2.5 1.5 TO 220 MTP3N60 3 75 â'" 1000 600 2.5 1.5 ISOWATT 220 MTP3N60 Fl 2.5 35 1.5 1000 600 1.2 3 ISOWATT 218 MTH6N60 Fl 3.5 40 3
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OCR Scan
IRFP 740 IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 MTP6N60

irfp 950

Abstract: tsd4m450v 500 28 12000 600 2.5 1.5 TO 220 MTP3N60 3 75 1.5 1000 600 2.5 1.5 ISOWATT 220 MTP3N60FI 2.5 35 1.5 , 14 180 9.3 3000 500 0.4 7.9 ISOWATT 218 IRFP 450 Fi 9 70 9.3 3000 600 2.5 1.5 TO 220 MTP3N60 3 75 â'" 1000 600 2.5 1.5 ISOWATT 220 MTP3N60 Fl 2.5 35 1.5 1000 600 1.2 3 ISOWATT 218 MTH6N60 Fl 3.5 40 3
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OCR Scan
SGSP479 STHV82 irfp 950 tsd4m450v transistor BUZ45 SGSP369 BUZ74 IRF842 IRF842FI IRF840 IRF840FI BUZ354 BUZ45A

IRF 850

Abstract: mje13005-1 14 180 9.3 3000 500 0.4 7.9 ISOWATT 218 IRFP 450 Fi 9 70 9.3 3000 600 2.5 1.5 TO 220 MTP3N60 3 75 â'" 1000 600 2.5 1.5 ISOWATT 220 MTP3N60 Fl 2.5 35 1.5 1000 600 1.2 3 ISOWATT 218 MTH6N60 Fl 3.5 40 3
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OCR Scan
TS59C11 M9306 IRF 850 mje13005-1 transistors bu 407 sgsp 369 13005 A ST24C02 TS93C46 M9346

IRFP 740

Abstract: IRF 810 14 180 9.3 3000 500 0.4 7.9 ISOWATT 218 IRFP 450 Fi 9 70 9.3 3000 600 2.5 1.5 TO 220 MTP3N60 3 75 â'" 1000 600 2.5 1.5 ISOWATT 220 MTP3N60 Fl 2.5 35 1.5 1000 600 1.2 3 ISOWATT 218 MTH6N60 Fl 3.5 40 3
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OCR Scan
TSD4M351V IRF722FI TSD4M350V SGSP364 TSD4M250V IRFP150 SGS100MA010D1 IRF743FI IRF741 IRF741FI SGSP341 BUZ76A

MTP6N55

Abstract: MTP2P45 Plastic TMOS Power MOSFETs â'" T0-220AB TO-220AB CASE 221A-02 Â¥ TMOS 3 VBR(DSS) (Volts) Min rDS(on) @ 'D (Ohms) (Ampi Max Device 'D(Cont) (Ampi Max PD @ Tc = 25°C (Watts) Max 1000 10 0.5 MTP1N100 1 75 7 1.5 MTP3N100 3 950 10 0.5 MTP1N95 1 7 1.5 MTP3N95 3 900 8 1 MTP2N90 2 5 2 MTP4N90 4 125 850 8 1 MTP2N85 2 75 5 2 MTP4N85 4 125 800 7 1.5 MTP3N80 3 75 750 MTP3N75 600 12 0.5 MTP1N60 1 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75
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OCR Scan
MTP6N55 MTP2P50 MTP2P45 IRF843 MTP8N45 IRF840 SELECTION GUIDE irf8408 MTP2N55 MTP1N50 MTP2N50 IRF822

MTP3N80

Abstract: MTP1N60 Plastic TMOS Power MOSFETs â'" T0-220AB TO-220AB CASE 221A-02 Â¥ TMOS 3 VBR(DSS) (Volts) Min rDS(on) @ 'D (Ohms) (Ampi Max Device 'D(Cont) (Ampi Max PD @ Tc = 25°C (Watts) Max 1000 10 0.5 MTP1N100 1 75 7 1.5 MTP3N100 3 950 10 0.5 MTP1N95 1 7 1.5 MTP3N95 3 900 8 1 MTP2N90 2 5 2 MTP4N90 4 125 850 8 1 MTP2N85 2 75 5 2 MTP4N85 4 125 800 7 1.5 MTP3N80 3 75 750 MTP3N75 600 12 0.5 MTP1N60 1 6 1 MTP2N60 2 2.5 1.5 MTP3N60 3 1.2 3 MTP6N60 6 125 550 12 0.5 MTP1N55 1 75
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OCR Scan
MTP4N50 MTM1N100 MTM6N90 MTM6N60 MTM4N50 MTM7N50 MTM2N45 mtm2n50 IRF450 IRF820 MTP3N50 IRF832 IRF830 MTP8N50

12N60FI

Abstract: K791 e n to fa c ilita te "w o rs t c a s e " design. MOTOROLA TMOS POWER MOSFET DATA MTM/MTP3N60 , 7.5 (T yp ) - nH - MOTOROLA TMOS POWER MOSFET DATA 3*413 MTM/MTP3N60, MTP3N55 TYPICAL , /MTP3N60, MTP3N55 SAFE OPERATING AREA INFORMATION æ Z J * - rDS|oni - PACKAGE L IM IT , DATA MTM/MTP3N60, MTP3N55 C, CAPACITANCE (pF) o Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qg
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OCR Scan
2SK1723 12N60FI K791 a4n50e 2N60E k2n50 p3n90 2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118

IRF732P

Abstract: IRF722P 14 180 9.3 3000 500 0.4 7.9 ISOWATT 218 IRFP 450 Fi 9 70 9.3 3000 600 2.5 1.5 TO 220 MTP3N60 3 75 â'" 1000 600 2.5 1.5 ISOWATT 220 MTP3N60 Fl 2.5 35 1.5 1000 600 1.2 3 ISOWATT 218 MTH6N60 Fl 3.5 40 3
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OCR Scan
2SK295 SGSP321 SGSP367 IRF540FI SGSP381 BUZ71 IRF732P IRF722P SGSP3055 1rfp450 MTP20N10 irf522p 2SK296 2SK308 2SK310 2SK311 2SK312
Showing first 20 results.