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Part : MTP3N120E Supplier : Motorola Manufacturer : Bristol Electronics Stock : 18 Best Price : - Price Each : -
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MTP3N120E Datasheet

Part Manufacturer Description PDF Type
MTP3N120E Motorola TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM Original
MTP3N120E On Semiconductor TMOS E-FET Power Field Effect Transistor Original
MTP3N120E Toshiba Power MOSFETs Cross Reference Guide Original
MTP3N120E/D On Semiconductor TMOS POWER FET 3.0 AMPERES 1200 VOLTS Original
MTP3N120E/D On Semiconductor TMOS POWER FET 3.0 AMPERES 1200 VOLTS Original
MTP3N120E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Original

MTP3N120E

Catalog Datasheet MFG & Type PDF Document Tags

UC3845BN

Abstract: MBR370 MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET.TM Power Field Effect Transistor Motorola Preferred Device , TMOS Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MTP3N120E ELECTRICAL , junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MTP3N120E TYPICAL , MTP3N120E POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing
Motorola
Original
AN1327 UC3845BN MBR370 Flyback Switching Power Supply UC3845BN USED CIRCUIT MUR430 Motorola diode 207 220AB

MUR430

Abstract: UC3845BN MTP3N120E Designer's Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel , Publication Order Number: MTP3N120E/D MTP3N120E MAXIMUM RATINGS (TC = 25°C unless otherwise noted , ://onsemi.com 2 MTP3N120E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic , . trr ta tb QRR LD LS http://onsemi.com 3 MTP3N120E TYPICAL ELECTRICAL CHARACTERISTICS 6 TJ , . Drain-To-Source Leakage Current versus Voltage http://onsemi.com 4 MTP3N120E POWER MOSFET SWITCHING
ON Semiconductor
Original
mtp3n120

UC3845BN USED CIRCUIT

Abstract: MBR370 MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET.TM Power Field Effect Transistor Motorola Preferred Device , TMOS Motorola, Inc. 1998 Power MOSFET Transistor Device Data 1 MTP3N120E ELECTRICAL , MTP3N120E TYPICAL ELECTRICAL CHARACTERISTICS 6 6 5 I D , DRAIN CURRENT (AMPS) I D , DRAIN , MTP3N120E POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing
Motorola
Original
AN569 MOC8102 mosfet transistor 800 volts.400 amperes

3n120e

Abstract: mtp3n O S F E T T ra n sisto r D evice Data 4 -7 2 7 MTP3N120E TYPICAL ELECTRICAL CHARACTERISTICS , O S F E T T ra n s is to r D evice Data MTP3N120E POWER MOSFET SWITCHING S w itchin g b e h a , MTP3N120E Qg, TOTAL GATE CHARGE (nC) R q . g a t e RESISTAN CE (OHMS) Figure 8. G ate-T o-S o urce , ro la T M O S P o w e r M O S F E T T ra n sisto r D evice Data MTP3N120E SAFE OPERATING AREA , Response M o to rola T M O S P o w e r M O S F E T T ra n sisto r D evice Data 4 -7 3 1 MTP3N120E
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OCR Scan
3n120e mtp3n
Abstract: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designerâ'™s Data Sheet M TP3 N 120E TMOS E-FETâ"¢ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS This advanced high-vo , Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 M O T O R O L A MTP3N120E/D MTP3N120E/D -
OCR Scan

NTP3055AV

Abstract: NTP3055 December, 2000 Page 5 of 6 MTP3N120E MTP3N50E MTP3N60E MTP40N10E MTP4N40E MTP4N50E MTP4N80E
ON Semiconductor
Original
MTB20N20E MTB3N100ET4 MTB3N120E MTB3N60ET4 MTP27N10E MTP5P25 NTP3055AV NTP3055 irf630 irf640 IRF540 0708B 08-DEC-2000 S21431 RYFV70 T0220 MTB1306T4 MTB15N06V

NTE199

Abstract: NTE2324 NTE 837 MTP3N100E 1.86 ONS 847 NE558D 1.21 PHI 855 NTE2014 5.03 NTE — NTE378 2.61 NTE 837 MTP3N120E
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Original
NTE102A NTE2324 NTE107 NTE109 NTE116 NTE2354 NTE199 NTE262 nte222 NTE3098 MPX2010GS MTP75N06HD NTE2312 MPX2050DP MTP8N50E

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide MTP3N120E MTP40N10E MTP33N10E MTP20N20E MTP20N20E Page 2 12/10/98 TMOS® Power MOSFET Cross
Motorola
Original
mosfet cross reference Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET MOSFET TOSHIBA 2SK SUP60NO6-18 2SJ334 2SJ380 2SJ402 2SJ412 2SJ419 2SJ420

IRF9310

Abstract: mosfet cross reference MTP3N120E MTP40N10E MTP33N10E MTP20N20E MTP20N20E MTP50N06V MTP50N06V MTP60N06HD MTP4N80E MTP4N80E MTP8N50E
ON Semiconductor
Original
IRF9310 IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution SG388/D CR108/D

HC08MP16

Abstract: ac motor speed control circuit diagram with IGBT max 5 ID Amps 1.5 Device MTP3N120E MTB3N120E ID(cont) Amps 3 Pd(1) Watts 2.5
Motorola
Original
HC05MC4 HC08MP16 ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT BR1480/D MMDS05 K1TITC127/D

mgb20n40cl

Abstract: MOTOROLA 136 DPAK ID (Amps) MTP3N120E 1 PD(1) (Watts) Max 250 @ 1.5 MTP1N100E ID (cont) Amps
Motorola
Original
mgb20n40cl MOTOROLA 136 DPAK MPIC2131FN MPIC2112DW MPIC2151D MTP75N06 MTD/MTP3055E MTD/MTP2955E MMSF4P01HDR1 SG265/D MC6530

MBR370

Abstract: AN1327 C8 1000 pF +5 V C14 MTP3N120E UC3845BN D5 3.3 V C12 Vaux 7 R10 27 k +
Motorola
Original
MTB3N120E/D

mgb20n40cl

Abstract: 340G MTP3N120E 3 125 MTP1N100E 1 75 1.5 MTP3N100E 3 125 2 MTP4N80E 4 V(BR
Motorola
Original
MGP20N60 340G TO-220AB footprint Motorola Master Selection Guide 221A-06 IGBTs Designed For Automotive Ignition Systems MGP20N14CL MGP20N35CL MGB20N35CL MGP20N40CL 247AE MGP5N60E

mgb20n40cl

Abstract: MGB20N40 (cont) Amps PD(1) (Watts) Max MTP3N120E 3 125 MTP1N100E 1 75 1.5 MTP3N100E
Motorola
Original
MGW12N120 MGB20N40 motorola automotive transistor coil ignition MTD1N60E1 MTSF3N03HD MTD20N06V MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D

SSH6N80

Abstract: ptc6063 equivalent : MTP3N35 STI Type: MTP3N120E Notes: Breakdown Voltage: 1200 Continuous Current: 3 RDS(on) Ohm: 5.0 , Polarity: Industry Type: MTP3N120E STI Type: MTP3N40 Notes: Breakdown Voltage: 400 Continuous Current
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Original
SSH6N80 ptc6063 equivalent MTW15N25E NTE2393 SPA08N80C3 NTE99 MTM8N55 MTM8N60 MTM8N40 MTP10N10 MTP10N25 SSH5N90
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