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Part : MTP3N120E Supplier : Motorola Manufacturer : Bristol Electronics Stock : 18 Best Price : - Price Each : -
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MTP3N120E/D Datasheet

Part Manufacturer Description PDF Type
MTP3N120E/D On Semiconductor TMOS POWER FET 3.0 AMPERES 1200 VOLTS Original
MTP3N120E/D On Semiconductor TMOS POWER FET 3.0 AMPERES 1200 VOLTS Original
MTP3N120E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Original

MTP3N120E/D

Catalog Datasheet MFG & Type PDF Document Tags

UC3845BN

Abstract: MBR370 MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET.TM Power Field Effect Transistor Motorola Preferred Device , Ting Kok Road, Tai Po, N.T., Hong Kong. 852­26629298 8 *MTP3N120E/D* Motorola TMOS Power MOSFET Transistor Device Data MTP3N120E/D Motorola , Voltage Range; Off­line Flyback Switching Power Supply D G S CASE 221A­06, Style 5 TO
Motorola
Original
AN1327 UC3845BN MBR370 Flyback Switching Power Supply UC3845BN USED CIRCUIT MUR430 Motorola diode 207 220AB
Abstract: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designerâ'™s , Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 M O T O R O L A MTP3N120E/D MTP3N120E/D , q = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-Source Voltage V d SS 1200 Vdc Drain-Gate Voltage (R g s = 1 0 M il) V d GR 1200 Vdc VGS V g SM -
OCR Scan

MUR430

Abstract: UC3845BN D ® G S © Semiconductor Components Industries, LLC, 2006 August, 2006 - Rev. 3 1 Publication Order Number: MTP3N120E/D MTP3N120E MAXIMUM RATINGS (TC = 25°C unless otherwise noted , MTP3N120E SAFE OPERATING AREA 100 E AS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) I D , DRAIN , additional information, please contact your local Sales Representative http://onsemi.com 9 MTP3N120E/D , MTP3N120E Designer's Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel
ON Semiconductor
Original
mtp3n120

UC3845BN USED CIRCUIT

Abstract: MBR370 MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET.TM Power Field Effect Transistor Motorola Preferred Device , MTP3N120E TYPICAL ELECTRICAL CHARACTERISTICS 6 6 5 I D , DRAIN CURRENT (AMPS) I D , DRAIN , Time Comparable to Discrete Fast Recovery Diode ® D G * See App. Note AN1327 - Very Wide , TMOS Motorola, Inc. 1998 Power MOSFET Transistor Device Data 1 MTP3N120E ELECTRICAL
Motorola
Original
AN569 MOC8102 mosfet transistor 800 volts.400 amperes

3n120e

Abstract: mtp3n O S F E T T ra n sisto r D evice Data 4 -7 2 7 MTP3N120E TYPICAL ELECTRICAL CHARACTERISTICS , O S F E T T ra n s is to r D evice Data MTP3N120E POWER MOSFET SWITCHING S w itchin g b e h a , ro la T M O S P o w e r M O S F E T T ra n sisto r D evice Data MTP3N120E SAFE OPERATING AREA , Response M o to rola T M O S P o w e r M O S F E T T ra n sisto r D evice Data 4 -7 3 1 MTP3N120E , Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d h ig h -
-
OCR Scan
3n120e mtp3n

NTP3055AV

Abstract: NTP3055 December, 2000 Page 5 of 6 MTP3N120E MTP3N50E MTP3N60E MTP40N10E MTP4N40E MTP4N50E MTP4N80E
ON Semiconductor
Original
MTB20N20E MTB3N100ET4 MTB3N120E MTB3N60ET4 MTP27N10E MTP5P25 NTP3055AV NTP3055 irf630 irf640 IRF540 0708B 08-DEC-2000 S21431 RYFV70 T0220 MTB1306T4 MTB15N06V

NTE199

Abstract: NTE2324 NTE 837 MTP3N100E 1.86 ONS 847 NE558D 1.21 PHI 855 NTE2014 5.03 NTE — NTE378 2.61 NTE 837 MTP3N120E
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Original
NTE102A NTE2324 NTE107 NTE109 NTE116 NTE2354 NTE199 NTE262 nte222 NTE3098 MPX2010GS MTP75N06HD NTE2312 MPX2050DP MTP8N50E

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide MTP3N120E MTP40N10E MTP33N10E MTP20N20E MTP20N20E Page 2 12/10/98 TMOS® Power MOSFET Cross
Motorola
Original
mosfet cross reference Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK 2SJ334 2SJ380 2SJ402 2SJ412 2SJ419 2SJ420

IRF9310

Abstract: mosfet cross reference Guide (SG388/D) available from the Literature Distribution Center (LDC). When viewing this , Low Voltage Surface Mount TMOS Power MOSFET Selector Guide (SG385/D) or in the ON Semiconductor Master Components Selector Guide (SG388/D). Full device data sheets can be obtained through LDC or the ON , Publication Order Number: CR108/D ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ , MTP3N120E MTP40N10E MTP33N10E MTP20N20E MTP20N20E MTP50N06V MTP50N06V MTP60N06HD MTP4N80E MTP4N80E MTP8N50E
ON Semiconductor
Original
IRF9310 IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution SG388/D CR108/D

HC08MP16

Abstract: ac motor speed control circuit diagram with IGBT BR1480/D Silicon Solutions for Off Line Motor Drives · Application Specific MCU's · , current source port; and a 6-channel, 8-bit A/D module. Key features of the 6-pin, 2-channel PWM module , RAM 176 Timer 16-Bit (1IC, 1OC) MFT, RTI Serial SCI A/D 68HC708MP16 PWM I/O , MC68332G MC68HC16Y1 Now Sampling Documentation HC705MC4GRS/D AN1058/D port with 10 mA , -channel, 8-bit A/D module. Key features of the 6-channel PWM module include center- or edge-aligned modes, a
Motorola
Original
HC05MC4 HC08MP16 ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT BR1480/D MMDS05 K1TITC127/D

mgb20n40cl

Abstract: MOTOROLA 136 DPAK IGBT P FOR MULTIPLE CHIP PRODUCTS PACKAGE TYPE P FOR PLASTIC TO-220 D FOR DPAK A FOR TO , MMSF4P01HDR1 CHANNEL POLARITY, N OR P C FOR COMPLEMENTARY SG265/D Rev 12 VOLTAGE RATING DIVIDED BY , ID (3)P (3) D (Watts) (Watts) Max 300 100 500 - - - - - - 4 2 5 , ID (Amps) MTP3N120E 1 PD(1) (Watts) Max 250 @ 1.5 MTP1N100E ID (cont) Amps , MC6530, would be translated as follows: Two-digit codes: D 1 2 3 4 P R S Q 7 1 2 3 G H I
Motorola
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mgb20n40cl MOTOROLA 136 DPAK MPIC2131FN MPIC2112DW MPIC2151D MTP75N06 MTD/MTP3055E MTD/MTP2955E SG265/D

MBR370

Abstract: AN1327 MOTOROLA Order this document by MTB3N120E/D SEMICONDUCTOR TECHNICAL DATA TM Data Sheet , unexpected voltage transients. ® D G CASE 418B­02, Style 2 D2PAK · Avalanche Energy , CHARACTERISTICS 6 6 TJ = 25°C 4 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VDS 10 V , DRAIN­TO­SOURCE AS AVALANCHE ENERGY (mJ) I D , DRAIN CURRENT (AMPS) 100 10 µs 100 µs 1.0 1 ms 10 , r (t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 P(pk
Motorola
Original
MTB3N120E/D

mgb20n40cl

Abstract: MGB20N40 P FOR PLASTIC TO­220 D FOR DPAK A FOR TO­220 ISOLATED W FOR TO­247 B FOR D2PAK Y FOR TO­264 E , ) 400 400 180 200/400(11) 100 90/160(11) 90 75 25 - - - - 12 Device D i (5 , T4 suffix to part number. D The MLP1N06CL is a SMARTDISCRETES device that has integrated , 100 200 100/180(11) 200/400(11) 12 - - 45 45/180(11) Device D i (5) 1(3) Power , , STYLE 13 N­Channel D SO­8 EZFETTM - Power MOSFETs with Zener Gate Protection · New Family of
Motorola
Original
MGB20N35CL MGW12N120 MGB20N40 motorola automotive transistor coil ignition MTD1N60E1 MTSF3N03HD Motorola Master Selection Guide MGP20N14CL MGP20N35CL MGP20N40CL 247AE MGP5N60E

mgb20n40cl

Abstract: 340G P FOR PLASTIC TO­220 D FOR DPAK A FOR TO­220 ISOLATED W FOR TO­247 B FOR D2PAK Y FOR TO­264 E , T4 suffix to part number. D The MLP1N06CL is a SMARTDISCRETES device that has integrated , N­Channel D SO­8 EZFETTM - Power MOSFETs with Zener Gate Protection · New Family of Low RDS(on , MTP3N120E 3 125 MTP1N100E 1 75 1.5 MTP3N100E 3 125 2 MTP4N80E 4 V(BR
Motorola
Original
MGP20N60 340G TO-220AB footprint 221A-06 IGBTs Designed For Automotive Ignition Systems MTB75n05hd MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D

SSH6N80

Abstract: ptc6063 equivalent : MTP3N35 STI Type: MTP3N120E Notes: Breakdown Voltage: 1200 Continuous Current: 3 RDS(on) Ohm: 5.0 , Polarity: Industry Type: MTP3N120E STI Type: MTP3N40 Notes: Breakdown Voltage: 400 Continuous Current
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Original
SSH6N80 ptc6063 equivalent MTW15N25E NTE2393 SPA08N80C3 NTE99 MTM8N55 MTM8N60 MTM8N40 MTP10N10 MTP10N25 SSH5N90

tl4311

Abstract: SOP23-5 SG388CH/D 2000 4 2 SG388CH/D 2000 3 2 © SCILLC,2000 © 1999 , SMARTMOSTM ?@fgVh i je-Xk^hGIJl-mn_o;gV phiJqrsh tuv IC w [\Xx yz-. {Mi|}]pzJ], D ~zz-. CMOS J] qrJ-zz uvVO _3-. J J_ =&#X IC &#_ tbc - ¡ uv¡ ¬D ® ¢£ ¤¡ s¥ui MN ¹ ¾h Á1 ÃÄ ¦§s$ ¨© º» T¼ ½¾J¿ À$ I*ÍJ ÎÏ ÐiÑ )+ "« ª ¬D ¯°'± ²³´µ ¶·'¸ ÅÆÇ ÈWÇ ËÌ ½¸ z® É , "« .14 =>)*+,J"«èEFDE æ FGFH º» ö IJ J456 - ¡ uv¡ ¬D ® ¢£ ¤¡ s¥ui MN ¹ ¾h Á1 ÃÄ
ON Semiconductor
Original
tl4311 SOP23-5 LM337B uc3842a uc3842b MGB20N40CLT4 2N4920 SG388CH/D

12v dc power supply with sg3526

Abstract: MAC97A6 630 SGJ388/D Aug-2000 2 3 ON Semiconductor 4 6 SGJ388/D Aug , ­23 6 http://onsemi.co.jp/ 16 MC33340P, D, MC33342P, D TA=-25+85SO-8DIP-8 2 , ://onsemi.co.jp/ 17 MC33341P, D TA=-25+85SO-8DIP-8 MC33341 "H" 8 · · · · · , SOT­89 2.5V7.5V (0.1V MC33463H­XXKT1 D L Vin Cin VFM L Vin Cin MC33463H­XXLT1 3 Lx VLx 2 VO CO Q Rb 3 EXT Cb D 2 VO CO VFM 100kHz 100kHz
ON Semiconductor
Original
12v dc power supply with sg3526 MAC97A6 630 tl494 inverter 12v 230v LM7580 design smps 500 watt TL494 MRC 433 mosfet SGJ388/D T2800D TCA0372 TIP102 TIP107 TIP112

transistor marking code 12W SOT-23

Abstract: MGB20N40CL SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE , SG388/D Master Components Selector Guide ON Semiconductor and are trademarks of Semiconductor , SG388/D Rev. 1, Aug­1999 Contents Analog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , LM2901 LM2901V MC3302 Designed for single or split supply operation, l i input common i t d includes mode i l d ground (negative supply) ­25 to +85 ­25 to +85 0 to +70 0 to +70 ­40 to +85
ON Semiconductor
Original
transistor marking code 12W SOT-23 laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526

YTA630

Abstract: MTW14P20 SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION ­ Please see General Information Section , ­Pin DIP D = 8­Pin SOIC FN = 20­Pin PLCC FN = 84­Pin PLCC DD = 128­Pin PQFP DH DK HI KE , /D from LDC. Development Systems 4­3 Price Book, January 10, 1998 4 IMAGING AND , /ColdFire NOTES · For Third Party Software refer to the HPESD Source Catalog. Order BR729/D from LDC
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ401 2SJ407
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