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Part Manufacturer Description Last Check Distributor Ordering
MTB29N15ET4 ON Semiconductor N/A 47,200 from $1.81 (Sep 2016) Rochester Electronics Buy

MTB29N15E Datasheet

Part Manufacturer Description PDF Type Ordering
MTB29N15E Motorola TMOS POWER FET 29 AMPERES 150 VOLTS
ri

4 pages,
76.24 Kb

Original Buy
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MTB29N15E On Semiconductor Power MOSFET 29 A, 150 V
ri

12 pages,
115.91 Kb

Original Buy
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MTB29N15E/D On Semiconductor TMOS POWER FET 29 AMPERES 150 VOLTS
ri

10 pages,
193.58 Kb

Original Buy
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MTB29N15E/D On Semiconductor TMOS POWER FET 29 AMPERES 150 VOLTS
ri

4 pages,
78.15 Kb

Original Buy
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MTB29N15E-D On Semiconductor Power MOSFET 29 Amps, 150 Volts N-Channel D2PAK
ri

12 pages,
115.91 Kb

Original Buy
datasheet frame
MTB29N15ET4 On Semiconductor Power MOSFET 29 A, 150 V
ri

12 pages,
115.91 Kb

Original Buy
datasheet frame

MTB29N15E

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Package Shipping MTB29N15E D2PAK 50 Units/Rail MTB29N15ET4 D2PAK 800/Tape & Reel , MTB29N15E Preferred Device Power MOSFET 29 Amps, 150 Volts N­Channel D2PAK This Power , Components Industries, LLC, 2000 November, 2000 ­ Rev. 2 1 Publication Order Number: MTB29N15E/D MTB29N15E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min , operating junction temperature. http://onsemi.com 2 MTB29N15E TYPICAL ELECTRICAL CHARACTERISTICS ... ON Semiconductor
Original
datasheet

12 pages,
115.91 Kb

MTB29N15ET4 MTB29N15E AN569 t29n15e TEXT
datasheet frame
Abstract: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET.TM Power Field Effect Transistor N­Channel Enhancement­Mode Silicon Gate TMOS , MTB29N15E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min , temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MTB29N15E TYPICAL ELECTRICAL , Leakage Current versus Voltage 3 MTB29N15E POWER MOSFET SWITCHING Switching behavior is most ... Motorola
Original
datasheet

10 pages,
193.59 Kb

SMD310 S 170 MOSFET TRANSISTOR MTB29N15E AN569 MTB29N15E/D TEXT
datasheet frame
Abstract: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET.TM Power Field Effect Transistor N­Channel Enhancement­Mode Silicon Gate TMOS , . © Motorola TMOS Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MTB29N15E ELECTRICAL , Device Data MTB29N15E PACKAGE DIMENSIONS C E V ­B­ NOTES: 1. DIMENSIONING AND , ISSUE C Motorola TMOS Power MOSFET Transistor Device Data 3 MTB29N15E Motorola reserves the ... Motorola
Original
datasheet

4 pages,
78.15 Kb

MTB29N15E MTB29N15E/D TEXT
datasheet frame
Abstract: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This , MTB29N15E TYPICAL ELECTRICAL CHARACTERISTICS C O Q_ s < cc cc CC CC < cc o Q Cl , Leakage Current versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 3 MTB29N15E , Power MOSFET Transistor Device Data MTB29N15E 10 rn h-j 120 i 9 C) ■> _ LU C ... OCR Scan
datasheet

9 pages,
143.55 Kb

MTB29N15E/D TEXT
datasheet frame
Abstract: = Device Code = Year = Work Week ORDERING INFORMATION Device MTB29N15E MTB29N15ET4 Package D2PAK , MTB29N15E Preferred Device Power MOSFET 29 Amps, 150 Volts N-Channel D2PAK This Power MOSFET , Order Number: MTB29N15E/D MTB29N15E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted , http://onsemi.com 2 MTB29N15E TYPICAL ELECTRICAL CHARACTERISTICS 60 VGS = 10 V ID , DRAIN , MTB29N15E POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing ... ON Semiconductor
Original
datasheet

9 pages,
237.74 Kb

mosfet transistor 400 volts.100 amperes J 350 FET t29n15e MTB29N15E TEXT
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB29N15E/D Product Preview , Circuits IDSS ancl V oS(on) Specified at Elevated Temperature MTB29N15E ¥ T MOS N-Channel TM OS , MTB29N15E TYPICAL ELECTRICAL CHARACTERISTICS C O Q_ s < cc cc CC CC < cc Cl o Q 1 2 , versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 3 MTB29N15E POWER MOSFET , Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTB29N15E 10 rn h-j C) > LU C) § O ... OCR Scan
datasheet

9 pages,
561.33 Kb

S 170 MOSFET TRANSISTOR MTB29N15E/D TEXT
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Abstract: SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MTB29N15E/D Product Preview , O S N-Channel MTB29N15E TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0-07 OHM DP CASE , MTB29N15E ELECTRICAL CHARACTERISTICS (T j = 25°C unless otherwise noted) Characteristic OFF , - 7.5 - 2 Motorola TMOS Power MOSFET Transistor Device Data MTB29N15E PACKAGE , TMOS Power MOSFET Transistor Device Data 3 MTB29N15E Motorola reserves the right to make ... OCR Scan
datasheet

4 pages,
86.43 Kb

MTB29N15E/D TEXT
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Abstract: MTB16N25ET4 MTB16N25ET4 MTB1N100E MTB1N100E MTB20N20E MTB20N20E MTB20N20ET4 MTB20N20ET4 MTB23P06V MTB23P06V MTB23P06VT4 MTB23P06VT4 MTB29N15E MTB29N15ET4 MTB2N60ET4 MTB2N60ET4 ... ON Semiconductor
Original
datasheet

6 pages,
23.16 Kb

PLA508 MTB3N120E MJL21193 MTB40N10ET4 MTP12N10E MBR7030WT MTP2N60E mtp4n50e MTB30 MTB1306 0708B MTP6N60E equivalent MTB3N100ET4 MTB3N60ET4 08-DEC-2000 MTP27N10E 08-DEC-2000 IRF540 08-DEC-2000 irf630 irf640 08-DEC-2000 MTP5P25 08-DEC-2000 NTP3055 08-DEC-2000 NTP3055AV 08-DEC-2000 08-DEC-2000 08-DEC-2000 TEXT
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Abstract: SG385-D MTB29N15E 100 0.060 - - 33 MTB33N10E MTB33N10E 0.04 - - 40 MTB40N10E MTB40N10E 0.12 ... ON Semiconductor
Original
datasheet

10 pages,
348.98 Kb

transistor SOT23 TO4 36 IGBT Manual MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTB3N100E mtd1p50e MTP75N06HD sg388 transistor book SG385/D TEXT
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Abstract: dl135d MTB15N06VL mtd3055et4 NTB35N15 NTB35N15 Single N­Channel 0.070 29 125 MTB29N15E Single N­Channel 0.081 30 178 , N­Channel 0.070 29 125 MTB29N15E Single N­Channel 0.050 39 178 NTB35N15 NTB35N15 Single ... ON Semiconductor
Original
datasheet

66 pages,
418.2 Kb

ic Cross Reference book free international rectifier guide book MGSF1N02L MGSF1P02L MGSF2P02HD MLP2N06 MMBF0201NL USE OF TRANSISTOR ignition MMDF3N04HD MMFT2955E MPF960 "cross reference" amplifier, sot-89, H1 SGD507/D BSS84L SGD507/D DL135 SGD507/D sot 223 marking code AH SGD507/D transistor equivalent mtp2955v SGD507/D ngb15n41 SGD507/D SGD507/D SGD507/D TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/datasheets/files/philips/xref/data/xref.txt
Philips 21/03/2003 434.46 Kb TXT xref.txt
No abstract text available
/download/29940701-653733ZC/xref.zip ()
Philips 21/03/2003 66.17 Kb ZIP xref.zip

Ixys Corp. Cross Reference Results

Ixys Corp. Part Ixys Description Industry Part Manufacturer Description Type
IXTA50N20P Buy VDSS (V)=200, ID@TC=25°C(A)=50, RDS(on) max @TJ=25°C(Ohm)=0.0600 MTB29N15E Buy On Semiconductor VDSS (V)=150, ID@TC=25°C(A)=29, RDS(on) max @TJ=25°C(Ohm)=0.0700 Close

NXP / Philips Cross Reference Results

NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
PHB30NQ15T Buy MTB29N15E/1/T4 Buy

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
NTB35N15T4G Buy MTB29N15E Buy Motorola Close

Misc. Cross Reference Results

Part Similar Part Notes
MTB29N15E Buy MTB30N06VL Buy