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MT46H64M32LFBQ-48 IT:C Micron Technology Inc DRAM Chip Mobile LPDDR SDRAM 2G-Bit 64M x 32 1.8V 90 -Pin VFBGA visit Digikey Buy
MT46H64M32LFBQ-48 WT:C TR Micron Technology Inc IC SDRAM 2GBIT 208MHZ 90VFBGA visit Digikey Buy
MT46H64M32LFBQ-48 AIT:C Micron Technology Inc DRAM Chip Mobile LPDDR SDRAM 2G-Bit 64M x 32 1.8V 90 -Pin VFBGA visit Digikey Buy
MT46H64M32LFBQ-48 AIT:C TR Micron Technology Inc IC SDRAM 2GBIT 208MHZ 90VFBGA visit Digikey Buy
MT46H64M32LFKQ-5 IT:C TR Micron Technology Inc IC SDRAM 2GBIT 167MHZ 168WFBGA visit Digikey Buy
MT46H64M32LFBQ-48 WT:C Micron Technology Inc DRAM Chip Mobile LPDDR SDRAM 2G-Bit 64M x 32 1.8V 90 -Pin VFBGA visit Digikey Buy

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MT46H64M32 Datasheet

Part Manufacturer Description PDF Type
MT46H64M32L2CG-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 152BGA Original
MT46H64M32L2CG-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 152BGA Original
MT46H64M32L2CG-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 152BGA Original
MT46H64M32L2CG-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 152BGA Original
MT46H64M32L2JG-5:A Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 168BGA Original
MT46H64M32L2JG-5:A Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 168BGA Original
MT46H64M32L2JG-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 168BGA Original
MT46H64M32L2JG-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 168BGA Original
MT46H64M32L2JG-6:A Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 168BGA Original
MT46H64M32L2JG-6:A Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 168BGA Original
MT46H64M32L2JG-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 168BGA Original
MT46H64M32L2JG-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 168BGA Original
MT46H64M32LFCM-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 90VFBGA Original
MT46H64M32LFCM-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 90VBGA Original
MT46H64M32LFCM-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 90VBGA Original
MT46H64M32LFCX-48IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H64M32LFCX-48IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H64M32LFCX-48WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H64M32LFCX-48WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H64M32LFCX-5AIT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
Showing first 20 results.

MT46H64M32

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Preliminaryâ'¡ 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features Options Mark -5 200 MHz 5.0ns â'¢ VDD/VDDQ â'" 1.8V/1.8V â'¢ Configuration â'" 128 Meg x 16 (32 Meg x 16 x 4 banks) â'" 64 Meg x 32 (16 Meg x 32 x 4 banks) â'¢ Addressing â Micron Technology
Original

marking k22 SMD

Abstract: pop 168 MT46H64M32L2JG-5:A MT46H64M32L2JG-5 IT:A MT46H64M32L2JG-54:A MT46H64M32L2JG-54 IT:A MT46H64M32L2JG-6:A MT46H64M32L2JG-6 IT:A LPDDR Product 1Gb DDR, x32, 200 MHz 1Gb DDR, x32, 200 MHz 1Gb DDR, x32, 185 MHz 1Gb DDR
Micron Technology
Original
marking k22 SMD pop 168 MT46H64M32 AB22-AB23 micron lpddr AC18-AC19 168-B MT46H 128M16 64M32 64M16 32M32

MT46H64M32

Abstract: cx 2601 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
cx 2601 240-B

ELPIDA DDR User

Abstract: MT46H128M32L2 Preliminary 2Gb: x16, x32 Automotive Mobile LPDDR SDRAM Features Automotive Mobile LPDDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs
Micron Technology
Original
ELPIDA DDR User

MT46H128M16LF

Abstract: MT46H128M32L2 Advance 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 Features · · · · · · · · · · · · · · · · · · · · VDD/VDDQ = 1.70­1.95V 1.2V I/O option VDDQ = 1.14­1.30V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs
Micron Technology
Original
MT46H128M16 MT46H256M32 152-Ball winbond 05 solder ball material MT46H128 ELPIDA 152-Ball PoP MTG-626
Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive Low-Power LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 16 Meg x 32 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs (CK and CK#) â Micron Technology
Original
256M32 128M32

MT46H128M16

Abstract: MT46H128M16LF 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
MT46H128M MT46H128M16L 240-ball MT46H128M32 ELPIDA LPDDR2 POP sac105

Micron Technology automotive

Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs (CK and CK#) â'¢ Commands entered on
Micron Technology
Original
Micron Technology automotive

Dual LPDDR2

Abstract: F012 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
Dual LPDDR2 F012 ELPIDA mobile dram LPDDR2

D9KG

Abstract: marking aa5 MT46H32M32LFCG-54:A MT46H32M32LFCG-54 IT:A MT46H32M32LFCG-6:A MT46H32M32LFCG-6 IT:A MT46H64M32L2CG-5:A MT46H64M32L2CG-5 IT:A MT46H64M32L2CG-54:A MT46H64M32L2CG-54 IT:A MT46H64M32L2CG-6:A MT46H64M32L2CG-6 IT:A LPDDR
Micron Technology
Original
D9KG marking aa5 marking code micron label M2P20 d9kh MT46H32M32LFCG 152-B
Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 Features Options Mark Speed Grade Clock Rate Access Time -48 208 MHz 4.8ns â'¢ VDD/VDDQ â'" 1.8V/1.8V H â'¢ Configuration â'" 256 Meg x 32 (32 Meg x 16 x 4 banks x 256M32 4) â'" 128 Meg x 32 (16 Meg x 32 x 4 banks x 128M32 2) â'" 128 Meg Micron Technology
Original
Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive Low-Power LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 16 Meg x 32 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs (CK and CK#) â Micron Technology
Original

MT46H256M32

Abstract: LPDDR2 SDRAM micron 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 ­ 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
LPDDR2 SDRAM micron samsung* lpddr2* pop package 78s24 M1110
Abstract: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs Micron Technology
Original

MT46H64M32

Abstract: MT46H128 MT46H64M32L2CG-5:A MT46H64M32L2CG-5 IT:A MT46H64M32L2CG-54:A MT46H64M32L2CG-54 IT:A MT46H64M32L2CG-6:A MT46H64M32L2CG-6 IT:A MT46H128M32L4KZ-6 IT ES:A Physical Part Marking D9KTK D9KTL D9KTM D9KTN D9KGX
Micron Technology
Original
lpddr MT46H128M32L4KZ SMD MARKING CODE 152 CSN-11 152-Ball PoP MT46H64M32L2CG 16M32

MT46H256M32L4

Abstract: MT46H128 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 ­ 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
DQ31-DQ16 micron lpddr2

MT46H128M16

Abstract: MT46H64M32 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
lpddr2 168

064MEG

Abstract: MT46H64M32 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
064MEG LPD-D

A1833

Abstract: Advanceâ'¡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 banks MT46H256M16L2 â'" 32 Meg x 16 x 4 banks x 2 MT46H64M32LF â'" 16 Meg x 32 x 4 banks MT46H128M32L2 â'" 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 â'" 16 Meg x 32 x 4 banks x 4 Features Options Speed Grade 4.8ns 185 5.0ns Notes: 166 5.5ns -75 â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Access Time -6 â'¢ â'¢ 208 -54 â
Micron Technology
Original
A1833

smd marking K23

Abstract: lpddr MT46H32M32LFJG-54 IT:A MT46H32M32LFJG-6:A MT46H32M32LFJG-6 IT:A MT46H64M32L2JG-5:A MT46H64M32L2JG-5 IT:A MT46H64M32L2JG-54:A MT46H64M32L2JG-54 IT:A MT46H64M32L2JG-6:A MT46H64M32L2JG-6 IT:A LPDDR Product 1Gb DDR
Micron Technology
Original
smd marking K23 SMD transistor MARKING CODE g23 168-ball LPDDR LPDDR Pop smd transistor ab2 E23 SMD Transistor A1
Showing first 20 results.