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MT46H128M32L2KQ-48 WT:C Micron Technology Inc IC SDRAM 4GBIT 208MHZ 168WFBGA visit Digikey Buy
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MT46H128M32L2KQ-48 IT:C TR Micron Technology Inc IC SDRAM 4GBIT 208MHZ 168WFBGA visit Digikey Buy

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MT46H128M32L2 Datasheet

Part Manufacturer Description PDF Type
MT46H128M32L2KQ-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT 168BGA Original
MT46H128M32L2KQ-5WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-5WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-6WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-6WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2MC-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT 240BGA Original
MT46H128M32L2MC-5WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2MC-5WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2MC-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT 240BGA Original
MT46H128M32L2MC-6WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2MC-6WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original

MT46H128M32L2

Catalog Datasheet MFG & Type PDF Document Tags

Micron Technology automotive

Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs (CK and CK#) â'¢ Commands entered on
Micron Technology
Original
Micron Technology automotive
Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 16 Meg x 32 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs (CK and CK#) â'¢ Commands entered on Micron Technology
Original
256M32 128M32
Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive Low-Power LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 16 Meg x 32 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs (CK and CK#) â Micron Technology
Original
Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 Features Options Mark Speed Grade Clock Rate Access Time -48 208 MHz 4.8ns â'¢ VDD/VDDQ â'" 1.8V/1.8V H â'¢ Configuration â'" 256 Meg x 32 (32 Meg x 16 x 4 banks x 256M32 4) â'" 128 Meg x 32 (16 Meg x 32 x 4 banks x 128M32 2) â'" 128 Meg Micron Technology
Original
128M16 64M32
Abstract: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive Low-Power LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 16 Meg x 32 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs (CK and CK#) â Micron Technology
Original

Dual LPDDR2

Abstract: F012 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
Dual LPDDR2 F012 MT46H128 MT46H128M16 MT46H128M ELPIDA mobile dram LPDDR2 168-B 240-B

064MEG

Abstract: MT46H64M32 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
064MEG MT46H64M32 LPD-D

MT46H128M16

Abstract: MT46H128M16LF 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
MT46H256M32 MT46H128M16L 240-ball MT46H128M32 ELPIDA LPDDR2 POP sac105

A1833

Abstract: Advanceâ'¡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 banks MT46H256M16L2 â'" 32 Meg x 16 x 4 banks x 2 MT46H64M32LF â'" 16 Meg x 32 x 4 banks MT46H128M32L2 â'" 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 â'" 16 Meg x 32 x 4 banks x 4 Features Options Speed Grade 4.8ns 185 5.0ns Notes: 166 5.5ns -75 â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Access Time -6 â'¢ â'¢ 208 -54 â
Micron Technology
Original
A1833 MTG-626
Abstract: Preliminaryâ'¡ 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features Options Mark -5 200 MHz 5.0ns â'¢ VDD/VDDQ â'" 1.8V/1.8V â'¢ Configuration â'" 128 Meg x 16 (32 Meg x 16 x 4 banks) â'" 64 Meg x 32 (16 Meg x 32 x 4 banks) â'¢ Addressing â Micron Technology
Original

MT46H64M32

Abstract: cx 2601 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
cx 2601

MT46H256M32L4

Abstract: MT46H128 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 ­ 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
152-ball DQ31-DQ16 M1110 micron lpddr2

MT46H128M16

Abstract: MT46H64M32 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
lpddr2 168

ELPIDA DDR User

Abstract: MT46H128M32L2 Preliminary 2Gb: x16, x32 Automotive Mobile LPDDR SDRAM Features Automotive Mobile LPDDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs
Micron Technology
Original
ELPIDA DDR User

MT46H128M16LF

Abstract: MT46H128M32L2 Advance 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 Features · · · · · · · · · · · · · · · · · · · · VDD/VDDQ = 1.70­1.95V 1.2V I/O option VDDQ = 1.14­1.30V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs
Micron Technology
Original
winbond 05 solder ball material ELPIDA 152-Ball PoP lpddr 152-Ball PoP

MT46H256M32

Abstract: LPDDR2 SDRAM micron 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 ­ 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
Micron Technology
Original
LPDDR2 SDRAM micron samsung* lpddr2* pop package 78s24
Abstract: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features Options â'¢ VDD/VDDQ = 1.70â'"1.95V â'¢ Bidirectional data strobe per byte of data (DQS) â'¢ Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle â'¢ Differential clock inputs Micron Technology
Original