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MT46H32M16LFBF-5 IT:C TR Micron Technology Inc 32MX16 MOBILE DDR SDRAM PLASTIC IND TEMP PBF VFBGA 1.8V visit Digikey Buy
MT46H32M32LFB5-5 IT:B TR Micron Technology Inc 32MX32 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V visit Digikey Buy
MT46H32M32LFMA-5 IT:B TR Micron Technology Inc 32MX32 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN POP 1.8V visit Digikey Buy
MT46H16M32LFB5-5 IT:C TR Micron Technology Inc 16MX32 MOBILE DDR SDRAM PLASTIC IND TEMP GREEN VFBGA 1.8V visit Digikey Buy
MT46H32M16LFBF-5 IT:C Micron Technology Inc DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA Tray visit Digikey Buy
MT46H32M32LFB5-5 IT:B Micron Technology Inc DRAM Chip Mobile LPDDR SDRAM 1G-Bit 32Mx32 1.8V 90-Pin VFBGA Tray visit Digikey Buy

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Part : MT46H16M32LFCM-6IT:B Supplier : Micron Technology Manufacturer : America II Electronics Stock : 1,150 Best Price : - Price Each : -
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Part : MT46H64M16LFCK-6:A Supplier : Micron Technology Manufacturer : Bristol Electronics Stock : 7 Best Price : $18.00 Price Each : $18.00
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Part : DEMT46H128M16LFCK6ITA Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 14 Best Price : $9.9840 Price Each : $10.8450
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Part : MT46H128M32L2KQ-5 WT:B Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 66 Best Price : $12.5770 Price Each : $15.2410
Part : MT46H16M16LFBF-6 IT:H Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 124,950 Best Price : $12.80 Price Each : $17.60
Part : MT46H16M16LFBF-6 IT:H TR Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 317,000 Best Price : $5.26 Price Each : $5.26
Part : MT46H16M16LFBF-6:H TR Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 57,000 Best Price : $3.65 Price Each : $3.65
Part : MT46H16M32LFB5-5 IT:C Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 8,805 Best Price : $4.09 Price Each : $4.09
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Part : MT46H16M32LFB5-6 AIT:C Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 1,333 Best Price : $5.9560 Price Each : $7.7560
Part : MT46H16M32LFB5-6 AIT:CTR Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 2,000 Best Price : $4.9520 Price Each : $7.4520
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Part : MT46H16M32LFB5-6 AT:CTR Supplier : Micron Technology Manufacturer : Chip1Stop Stock : 974 Best Price : $7.8120 Price Each : $11.7570
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MT46H Datasheet

Part Manufacturer Description PDF Type
MT46H128M16LFB7-5AIT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT FBGA Original
MT46H128M16LFB7-5AIT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT FBGA Original
MT46H128M16LFB7-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H128M16LFB7-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H128M16LFB7-5WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H128M16LFB7-5WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H128M16LFB7-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H128M16LFB7-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H128M16LFB7-6WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H128M16LFB7-6WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT VFBGA Original
MT46H128M16LFCK-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 60VBGA Original
MT46H128M16LFCK-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 2GBIT 60VBGA Original
MT46H128M32L2KQ-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-5IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT 168BGA Original
MT46H128M32L2KQ-5WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-5WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-6IT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
MT46H128M32L2KQ-6WT Micron Technology Memory, Integrated Circuits (ICs), IC LPDDR SDRAM 4GBIT WFBGA Original
Showing first 20 results.

MT46H

Catalog Datasheet MFG & Type PDF Document Tags

90 ball VFBGA

Abstract: MT46H16M32LF Advance 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H32M16LF ­ 8 Meg x 16 x 4 Banks MT46H16M32LF ­ 4 Meg x 32 x 4 Banks For a complete data sheet, please , : 09005aef818ff7ae MT46H32M16.fm - Rev. A 03/05 EN 1 Micron Technology, Inc., reserves the right to change , : 09005aef818ff7ae MT46H32M16.fm - Rev. A 03/05 EN 2 Micron Technology, Inc., reserves the right to change , MT46H32M16.fm - Rev. A 03/05 EN 3 Micron Technology, Inc., reserves the right to change products or
Micron Technology
Original
90 ball VFBGA micron ddr mt46h32m16 32M16 A12 marking diode MARKING A9 Micron
Abstract: Preliminaryâ'¡ 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF â'" 32 Meg x 16 x 4 Banks MT46H64M32LF â'" 16 Meg x 32 x 4 Banks MT46H128M32L2 â'" 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 â'" 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features Options Mark -5 200 MHz 5.0ns â'¢ VDD/VDDQ â'" 1.8V/1.8V â'¢ Configuration â'" 128 Meg x 16 (32 Meg x 16 x 4 banks) â'" 64 Meg x 32 (16 Meg x 32 x 4 banks) â'¢ Addressing â Micron Technology
Original
Abstract: Part Numbers Part Number MT46H8M16LFCF-75 MT46H8M16LFCF-75IT MT46H8M16LFCF-10 MT46H8M16LFCF-10IT , : 09005aef8199c1ec/Source: 09005aef81a19319 MT46H8M16LF_1.fm - Rev. J 11/05 EN 1 Micron Technology, Inc , . . . . . . . . . . . .68 PDF: 09005aef8199c1ec/Source: 09005aef81a19319 MT46H8M16LF_1.fm - Rev , /Source: 09005aef81a19319 MT46H8M16LF_1.fm - Rev. J 11/05 EN 3 Micron Technology, Inc., reserves the , /Source: 09005aef81a19319 MT46H8M16LF_1.fm - Rev. J 11/05 EN 4 Micron Technology, Inc., reserves the Micron Technology
Original
A10/AP

MT46H64M16LF

Abstract: : MT46H32M32LFXX-75IT MT46 VDD/ VDDQ Mobile Configuration Package Speed Temp. VDD/VDDQ 1.7V/1.95V H IT , Advance 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF ­ 16 Meg x 16 x 4 banks MT46H32M32LF ­ 8 Meg x 32 x 4 banks For the latest data sheet, refer to Micron's Web site: www.micron.com Features · · · · · · · · · · · · · · · · · · · · Endur-ICTM technology VDD/VDDQ = 1.70­1.95V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two
Micron Technology
Original
Abstract: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF ­ 8 Meg x 16 x 4 banks MT46H16M32LF ­ 4 Meg x 32 x 4 banks Features · · · · · · · · · · · · · · · · · · · · VDD/VDDQ = 1.70­1.95V 1.2V I/O option VDDQ = 1.14­1.30V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge-aligned with data for READs; centeraligned Micron Technology
Original
305/S

marking k22 SMD

Abstract: pop 168 , standard addressing Table 2: 168-ball Production Part Numbers Part Numbers MT46H32M32LFJG-5:A MT46H32M32LFJG-5 IT:A MT46H32M32LFJG-54:A MT46H32M32LFJG-54 IT:A MT46H32M32LFJG-6:A MT46H32M32LFJG-6 IT:A MT46H64M32L2JG-5:A MT46H64M32L2JG-5 IT:A MT46H64M32L2JG-54:A MT46H64M32L2JG-54 IT:A MT46H64M32L2JG-6:A MT46H64M32L2JG-6 IT:A LPDDR Product 1Gb DDR, x32, 200 MHz 1Gb DDR, x32, 200 MHz 1Gb DDR, x32, 185 MHz 1Gb DDR , -Ball Package-on-a-Package (PoP) TI OMAPTM MT46HxxxMxxLxJG Features · Vdd/Vddq = 1.70­1.95V · Bidirectional data strobe
Micron Technology
Original
marking k22 SMD pop 168 MT46H64M32 AB22-AB23 micron lpddr AC18-AC19 168-B MT46H 128M16 64M32 64M16 32M32

lpddr elpida 512

Abstract: ELPIDA lpddr 512 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF ­ 8 Meg x 16 x 4 Banks MT46H16M32LF ­ 4 Meg x 32 x 4 Banks Features · · · · · · · · · · · · · · · · · · · · Vdd/Vddq = 1.70­1.95V 1.2V I/O option Vddq = 1.14­1.30V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge-aligned with data for
Micron Technology
Original
lpddr elpida 512 ELPIDA lpddr 512 winbond 2503 elpida lpddr2 Mobile LPDDR2

MT46H64M16LF

Abstract: wfbga 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF ­ 16 Meg x 16 x 4 banks MT46H32M32LF ­ 8 Meg x 32 x 4 banks MT46H32M32LG ­ 8 Meg x 32 x 4 banks Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on each positive CK edge · DQS edge-aligned with data for READs; centeraligned with data
Micron Technology
Original
wfbga 152-Ball PoP 1GB-x16

78s24

Abstract: MT46H16M32 Preliminary 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF ­ 8 Meg x 16 x 4 banks MT46H16M32LF ­ 4 Meg x 32 x 4 banks MT46H16M32LG ­ 4 Meg x 32 x 4 banks Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on each positive CK edge · DQS edge-aligned with data for READs
Micron Technology
Original
78s24 MT46H16M32 samsung confidential

ELPIDA mobile dram LPDDR2

Abstract: LPDDR2 SDRAM micron 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF ­ 16 Meg x 16 x 4 banks MT46H32M32LF ­ 8 Meg x 32 x 4 banks MT46H32M32LG ­ 8 Meg x 32 x 4 banks Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on each positive CK edge · DQS edge-aligned with data for READs; centeraligned with data
Micron Technology
Original
ELPIDA mobile dram LPDDR2 LPDDR2 SDRAM micron samsung lpddr samsung* lpddr2* pop package LPDDR2 SDRAM elpida infineon power cycling

ELPIDA mobile dram LPDDR2

Abstract: infineon power cycling 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF ­ 4 Meg x 16 x 4 Banks MT46H8M32LF ­ 2 Meg x 32 x 4 Banks Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on each positive CK edge · DQS edge-aligned with data for READs; centeraligned with data for WRITEs · 4 internal banks for
Micron Technology
Original

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on
DigiKey Electronics Catalog
Original
schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38

MT46H64M32

Abstract: cx 2601 Preliminaryâ'¡ 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF â'" 16 Meg x 16 x 4 banks MT46H32M32LF â'" 8 Meg x 32 x 4 banks Features Options â'¢ â'¢ â'¢ â'¢ â'¢ VDD/VDDQ â'" 1.8V/1.8V â'¢ Configuration â'" 64 Meg x 16 (16 Meg x 16 x 4 banks) â'" 32 Meg x 32 (8 Meg x 32 x 4 banks) â'¢ Row-size option â'" JEDEC-standard option â'" Reduced page-size option1 â'¢ Plastic â'greenâ' package â'" 60-ball VFBGA (10mm x 11.5mm)2 â'" 90-ball VFBGA (10mm x
Micron Technology
Original
cx 2601 240-B
Abstract: Preview 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H16M16LF ­ 4 Meg x 16 x 4 Banks MT46H8M32LF ­ 2 Meg x 32 x 4 Banks For a complete data sheet, please , MT46H16M16.fm - Rev. A 03/05 EN 1 Micron Technology, Inc., reserves the right to change products or , MT46H16M16.fm - Rev. A 03/05 EN 2 Micron Technology, Inc., reserves the right to change products or , . . . . . . . . . . . 03/05 PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16.fm - Rev Micron Technology
Original
3074/S

90 ball VFBGA

Abstract: diode MARKING A9 Preliminary 2Gb: x16, x32 Automotive Mobile LPDDR SDRAM Features Automotive Mobile LPDDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features · VDD/VDDQ = 1.70­1.95V · Bidirectional data strobe per byte of data (DQS) · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs
Micron Technology
Original
mobile ddr transistor marking A9 781/S

ELPIDA DDR User

Abstract: MT46H128M32L2 Advance 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF ­ 32 Meg x 16 x 4 Banks MT46H64M32LF ­ 16 Meg x 32 x 4 Banks MT46H128M32L2 ­ 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 ­ 32 Meg x 16 x 4 Banks x 4 Features · · · · · · · · · · · · · · · · · · · · VDD/VDDQ = 1.70­1.95V 1.2V I/O option VDDQ = 1.14­1.30V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs
Micron Technology
Original
ELPIDA DDR User

MT46H128M16LF

Abstract: MT46H128M32L2 MT46H32M16LF_1.fm - Rev. F 06/05 EN CL = 2 CL = 3 -6 â'" 166 MHz 1.5ns 5.5ns 83.3 MHz , Number: MT46H16M32LFXX-75IT MT46V Mobile Configuration VDD/ VDDQ Package Temp. Speed , from the part number. Micronâ'™s new FBGA Part Marking Decoder makes it easier MT46H32M16LF_2.fmo , : 09005aef818ff7c5/Source: 09005aef81a6c5f3 MT46H32M16LF_2.fm - Rev. F 06/05 EN 5 Micron Technology, Inc , /Source: 09005aef81a6c5f3 MT46H32M16LF_2.fm - Rev. F 06/05 EN 6 Micron Technology, Inc., reserves
Micron Technology
Original
MT46H128M16 MT46H256M32 152-Ball winbond 05 solder ball material MT46H128 ELPIDA 152-Ball PoP MTG-626

LCD Iphone 3G

Abstract: cd player amplifier double ic 4440 (MT46H32M16LF from Micron). The chip is powered by 1.8V and is organized as 32Mbit x16, i.e. it has 16
National Semiconductor
Original
LCD Iphone 3G cd player amplifier double ic 4440 Amphenol Connectors CATALOG hynix lpddr2 iphone camera module Hynix Semiconductor lpddr2 TMS320DM355 LP5552 LP5550 LLP-16 LP5551 LLP-36
Showing first 20 results.