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Part : MT3S03AT(TE85L) Supplier : Toshiba Manufacturer : America II Electronics Stock : 18,796 Best Price : - Price Each : -
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MT3S03AT Datasheet

Part Manufacturer Description PDF Type
MT3S03AT Toshiba Scan
MT3S03AT Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan

MT3S03AT

Catalog Datasheet MFG & Type PDF Document Tags

IC 7486

Abstract: 534-1 MAG MT3S03AT NPN MT3S03AT VHF~UHF · · : mm : NF = 1.4dB (), |S21e|2 = 8dB () (f = 2 , 2-1B1A : 2.2mg () 1 2010-02-24 MT3S03AT (Ta = 25 , 2 2010-02-24 MT3S03AT 3 2010-02-24 MT3S03AT MT3S03AT : VCE = 1 V, IC = 5 mA, f , 2010-02-24 MT3S03AT : VCE = 2 V, IC = 20 mA, f = 100~2000 MHz Step 100 MHz S11 S21 S12 S21 , 65.14 0.269 66.91 0.044 -110.52 7.61 5 2010-02-24 MT3S03AT · · ·
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IC 7486 534-1 MAG 14241 13765 ic 7815 TA 7129

transistor 14315

Abstract: 14315 MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise , gain dB Noise figure dB 1 2003-08-08 MT3S03AT Electrical Characteristics (Ta = 25 , . Please handle with caution. 2 2003-08-08 MT3S03AT 3 2003-08-08 MT3S03AT MT3S03AT , 6.38 6.00 5.63 5.34 2 4 2003-08-08 MT3S03AT VCE = 2 V, IC = 20 mA, f = 100~2000 MHz Step , 2003-08-08 MT3S03AT 6 2003-08-08 Toshiba
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transistor 14315 14315

working of ic 8038

Abstract: marking 5241 MT3S03AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF , GHz 1.4 2.2 S21e2 (1) 2 1 Unit GHz dB dB 2003-08-08 MT3S03AT , This device electrostatic sensitivity. Please handle with caution. 2 2003-08-08 MT3S03AT 3 2003-08-08 MT3S03AT MT3S03AT VCE = 1 V, IC = 5 mA, f = 100~2000 MHz Step 100 MHz Frequency S11 , 0.234 60.42 0.166 -96.54 5.34 4 2003-08-08 MT3S03AT VCE = 2 V, IC = 20 mA, f =
Toshiba
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working of ic 8038 marking 5241 8250 bridge specifications of ic 8038

specifications of ic 8038

Abstract: working of ic 8038 MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise , figure dB 1 2007-11-01 MT3S03AT Electrical Characteristics (Ta = 25°C) Characteristics , . Please handle with caution. 2 2007-11-01 MT3S03AT 3 2007-11-01 MT3S03AT MT3S03AT , 6.38 6.00 5.63 5.34 2 4 2007-11-01 MT3S03AT VCE = 2 V, IC = 20 mA, f = 100~2000 MHz Step , 2007-11-01 MT3S03AT RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to
Toshiba
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for semiconductor IC 7106

of ic 8038

Abstract: MT3S03AT MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise , rate, etc). Marking 1 2010-02-24 MT3S03AT Microwave Characteristics (Ta = 25 , sensitive to electrostatic discharge. Please handle with caution. 2 2010-02-24 MT3S03AT 3 2010-02-24 MT3S03AT MT3S03AT VCE = 1 V, IC = 5 mA, f = 100 to 2000 MHz Step 100 MHz Frequency S11 , 60.42 0.166 -96.54 5.34 4 2010-02-24 MT3S03AT VCE = 2 V, IC = 20 mA, f = 100 to 2000
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of ic 8038
Abstract: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 40 10 100 125 -55-125 UNIT V V , notice. 2000 09-01 1/4 - TO SH IBA MT3S03AT ELECTRICAL CHARACTERISTICS (Ta = 25 , 09-01 2/4 - TO SH IBA MT3S03AT fT - IC NF - Iß >< o iz; w £ £ o tí , - p in - p in INPUT LEVEL PIN (dBmW) 2000 09-01 3/4 - TO SH IBA MT3S03AT -
OCR Scan
000707EAA2 IS21I2
Abstract: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise , contained herein is subject to change without notice. 2 000 01-18 - 1/4 TO SH IBA MT3S03AT , TO SH IBA MT3S03AT fT - IC NF - Iß > < o iz; w £ , MT3S03AT MT3S03AT VcE = 1 V, lc = 5 mA, f = 100-2000 MHz Step 100 MHz frequency (MHz) 100 200 300 400 -
OCR Scan
961001EAA1

working of ic 8038

Abstract: working of IC 7486 TOSHIBA MT3S03AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS â'¢ Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) â'¢ High , MT3S03AT ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT , MT3S03AT fT - ic nf - ic f = 2 GHz Ta = 25°C 3 V / s , TOSHIBA MT3S03AT MT3S03AT VCE = 1 V, lc = 5 mA, f = 100-2000 MHz Step 100 MHz frequency Sll S21 S12
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OCR Scan
working of IC 7486 8250 ic pin ic 8038

MT3S03AT

Abstract: 014E MT3S03AT SPICE parameters (UCB SPICE2G6) 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S03AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0 8 0 1 13 7 14 4 13 4 14 4 0 7 0 5 6 7 8 7 9 8 9 9 20 12 20 8 17 11 17 11 12 7 12 7 11 123 2.014E-02 2.014E-02 2.260E-10 2.260E-10 1.800E-13 1.346E-14 2.014E-02 2.014E-02
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014E 200E 800E 808E-10 053E-14 200E-15 066E-13 000E-13 400E-10

2SK3075 equivalent

Abstract: 10 ghz transistor 2SC5111FT 2SC5086FT 2SC5464FT 2SC5066FT 2SC5108FT MT3S03AT MT3S04AT MT3S07T 2SC5087 2SC5088 , 2SC5066 2SC5464 MT3S03AS MT3S04AS MT3S07S 2SC5086FT 2SC5066FT 2SC5464FT MT3S03AT MT3S04AT , 2SC5086FT 2SC5086 2SC5086FT 2SC5464 2SC5464FT MT3S04AS MT3S04AT MT3S03AS MT3S03AT VCO (2 , operating device MT3S03A MT3S03AU MT3S03AS MT3S03AT MT4S03A MT4S03AU - fT = , 2SC5098 MT3S03A MT3S03AU MT3S03AS MT3S03AT MT4S03A MT4S03AU MT3S06U MT3S06S MT3S06T MT4S06
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2SC5065 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 3SK320 transistor 2SC5066 2SC5085 2SC5090 2SC5095 MT3S07U 2SC5091

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner MT3S03AT MT3S06T MT3S07T MT3S14T MT3S35T MT3S36T MT3S37T MT3S41T fSM USQ 2SC5087 2SC5092 , 2SC5464FT 2SC5066FT 2SC5108FT 2SC5111FT MT3S03AT MT3S04AT MT3S05T MT3S06T MT3S07T MT3S11T MT3S12T , MT3S03AT MT3S06T MT3S07T MT3S14T* MT3S35T MT3S36T MT3S37T MT3S41T fSM USQ Bipolar , Bipolar transistor MT4S100T MT4S101T 2SC5317FT 2SC5086FT MT3S03AT MT3S04AT MT3S05T MT3S06T , S21e 2-IC 12 |S21e|2 ­ Insertion Gain (dB) MT3S03AT MT3S04AT MT3S05T MT3S06T 16 3
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sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor 2SC5088 SEC MT6L04AE 800-MH 900-MH DCS1800 BCE0003D S-167 BCE0003E

transistor 2SC5066

Abstract: BFP620 MT4S101U 2SC5508 2SC5509 2SC5010 2SC5435 2SC5317 2SC5317FT 2SC5316 MT3S03AS MT3S03AT MT3S03AU
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NESG250134 NESG260234 BFP450 BFP620 2SC5067 2SC5064 UPC2709 2SC5066 data sheet thn6601b THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z

MT3S03AS

Abstract: MT3S03AT MT6L58AE NPN MT6L58AE VHF~UHF /· · : mm · (6 ) ES6 2 Q1: SSM (TESM) Q2: SSM (TESM) MT3S06S MT3S03AS (MT3S06T) (MT3S03AT) 3 (SSM/TESM) (Ta = 25°C) Q1 Q2 VCBO 10 10 V VCEO 5 5 V VEBO 1.5 2 V IC 15 40 mA IB 7 10 ES6 mA PC ( 1) 100 JEDEC JEITA 2-2N1C : 3 mg () mW Tj
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MT6C03AE

Abstract: MT3S03AS MT6C03AE NPN MT6C03AE VHF~UHF · · : mm · (6 ) ES6 2 Q1/Q2: SSM (TESM) 3 (SSM/TESM) MT3S03AS (MT3S03AT) (Ta = 25°C) Q1/Q2 VCBO 10 V VCEO 5 V VEBO 2 V IC 40 mA JEDEC IB 10 mA JEITA 100 mW PC ( 1) ES6 2-2N1B : 3 mg () Tj 125 °C
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Abstract: BASE 2 1 4. COLLECTOR 2 25. BASE 1 6. COLLECTOR 1 H MT3S03AS (MT3S03AT) -H. j JEDEC EIAJ -
OCR Scan
MT6P03AT
Abstract: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P03AE MT6P03AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 Q1/Q2 : SSM (TESM) B1.210.05 5 MOUNTED DEVICES Three-pins (SSM/TESM) mold products are MT3S03AS (MT3S03AT) corresponded. M AXIM UM RATINGS (Ta = 25°C) 1.610.05 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector -
OCR Scan
Abstract: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P03AE MT6P03AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 5 MOUNTED DEVICES Three-pins (SSM/TESM) mold products are MT3S03AS (MT3S03AT) corresponded. M AXIM UM RATINGS (Ta = 25°C) Q1/Q2 : SSM (TESM) B1.210.05 1.610.05 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector -
OCR Scan
Abstract: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P03AE MT6P03AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 Q1/Q2 : SSM (TESM) B1.210.05 5 MOUNTED DEVICES Three-pins (SSM/TESM) mold products are MT3S03AS (MT3S03AT) corresponded. M AXIM UM RATINGS (Ta = 25°C) 1.610.05 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector -
OCR Scan
Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 in in O O o o p in V -F % 2 -O 1 1 1 6ö j5 MOUNTED DEVICES o o Q l : SSM (TESM) Q2 : SSM (TESM) Three-pins (SSM /T E SM ) mold products are corresponded. MT3S06S (MT3S06T) MT3S03AS (MT3S03AT) IT ) O +1 in 1 . 2 1 0 .0 5 q o +1 o " I o 1 . 6 -
OCR Scan
961001EA

2SC5256

Abstract: MT3S03AS TOSHIBA MT6L51AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ TWO devices are built in to the super-thin and ultra super mini (6 pins) package : TU6 MOUNTED DEVICES Unit in mm Q1 : SSM (TESM) Q2 : SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded. 2SC5256 (5256FT) MT3S03AS (MT3S03AT) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage vCBO 15 10 V Collector-Emitter
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OCR Scan

MT3S03

Abstract: MT6P03AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6P03AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Two devices are built in to the super-thin and extreme super mini (6 pins) package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded. MT3S03AS (MT3S03AT) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction
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MT3S03
Abstract: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 in in O O o o p in V -F 2 -O 1 1 1 T 5 6ö MOUNTED DEVICES o o Q l : SSM (TESM) Q2 : SSM (TESM) Three-pins (SSM /T E SM ) mold products are corresponded. MT3S06S (MT3S06T) MT3S03AS (MT3S03AT) IT ) O +1 in % 1 . 2 1 0 .0 5 q o +1 o " I 1 . 6 1 0 -
OCR Scan

FET K161

Abstract: Transistor C2216 00 522 MT4S101U P7 635 MT3S03AS MR 524 MT4S102T P8 638 MT3S03AT , 2SC5111FT *MT3S03AU *MT3S03AS VHF~UHF NPNTR OSC MT3S03AT MT3S03AFS MT4S03A MT4S03AU , 2 1.4 3 7 2 SSM MT3S03AT 5 40 100 0.75 10 3 10 8 3
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FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 050106DAD1 2SC382TM 2SC2114 2SK2497 2SC384 2SC1923
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