SC-88A IEC1000-4-2 SC-88A/SOT-323 BRD8011/D AND8308/D IEC61000-4-2 AND8307/D

Quad Array for ESD Protection ESD Protection Diodes with Low Clamping Voltage This quad monolithic silicon voltage suppressor is

MSQA6V1W5T2 Quad Array for ESD Protection ESD Protection Diodes with Low Clamping Voltage This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com 1 2 3 Features · · · · · · Low Clamping Voltage Stand Off Voltage 3 V Low Leakage < 1 mA @ 3 V SC-88A SC-88A Package Allows Four Separate Unidirectional Configurations IEC1000-4-2 IEC1000-4-2 Level 4 ESD Protection Pb-Free Package is Available* · · · · 5 Void Free, Transfer-Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications 4 SC-88A/SOT-323 SC-88A/SOT-323 CASE 419A Mechanical Characteristics: MARKING DIAGRAM 61 M G G MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 20 ms @TA 25°C (Note 1) Ppk 150 W Steady State Power - 1 Diode (Note 2) PD 385 mW Thermal Resistance, Junction-to-Ambient Above 25°C, Derate RqJA 325 3.1 °C/W mW/°C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ Tstg -55 to +150 °C ESD Discharge MIL STD 883C - Method 3015-6 IEC1000-4-2 IEC1000-4-2, Air Discharge IEC1000-4-2 IEC1000-4-2, Contact Discharge Lead Solder Temperature (10 s duration) VPP TL 61 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MSQA6V1W5T2 SC-88A SC-88A 3000/Tape & Reel SC-88A SC-88A (Pb-Free) 3000/Tape & Reel kV 16 16 9 MSQA6V1W5T2G 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non-repetitive current per Figure 5. Derate per Figure 10. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D BRD8011/D. *T2 Suffix Devices are Packaged with Pin 1 Opposing Sprocket Hole. See Application Note AND8308/D AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 5 1 Publication Order Number: MSQA6V1W5T2/D MSQA6V1W5T2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) I Parameter Symbol IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR Working Peak Reverse Voltage VC VBR VRWM Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk V IR VF IT Peak Power Dissipation C IPP Uni-Directional TVS Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS Breakdown Voltage VBR @ 1 mA (Vo) (Note 3) Device MSQA6V1W5 Min Nom Max Leakage Current IRM @ VRWM = 3 V (mA) 6.1 6.6 7.2 Capacitance @ 0 V Bias (pF) 1.0 Max VF @ IF = 200 mA (V) 90 1.25 VC Per IEC61000-4-2 IEC61000-4-2 (Note 4) Figures 1 and 2 See Below 3. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000-4-2 IEC61000-4-2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000-4-2 IEC61000-4-2 http://onsemi.com 2 MSQA6V1W5T2 IEC61000-4-2 IEC61000-4-2 Waveform IEC 61000-4-2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000-4-2 IEC61000-4-2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D AND8308/D - Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000-4-2 IEC61000-4-2 waveform. Since the IEC61000-4-2 IEC61000-4-2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform http://onsemi.com 3 80 MSQA6V1W5T2 100 Ipp, PEAK PULSE CURRENT (AMPS) IF , FORWARD CURRENT (A) 1.0 0.1 0.01 0.001 0.6 0.7 0.8 0.9 1.0 1.1 10 2.5 ms SQUARE WAVE 1.0 1.2 0 5.0 10 20 15 25 Figure 7. Clamping Voltage versus Peak Pulse Current (Reverse Direction) 100 Ppk , PEAK SURGE POWER (WATTS) 1000 10 1.0 2.5 ms SQUARE WAVE 100 10 NOTE: Non-Repetitive Surge. 0.1 1 0 2.0 4.0 6.0 8.0 12 10 1 10 100 VC, FORWARD CLAMPING VOLTAGE (VOLTS) 1000 t, TIME (ms) Figure 8. Clamping Voltage versus Peak Pulse Current (Forward Direction) Figure 9. Pulse Width 100 100 90 90 80 TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 ° C 30 VC, CLAMPING VOLTAGE (VOLTS) Figure 6. Forward Voltage Ipp, PEAK FORWARD PULSE CURRENT (AMPS) VF, FORWARD VOLTAGE (VOLTS) 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 80 70 60 50 40 30 20 10 0 0 TA, AMBIENT TEMPERATURE (°C) 1.0 2.0 3.0 BIAS VOLTAGE (VOLTS) Figure 10. Pulse Derating Curve Figure 11. Capacitance http://onsemi.com 4 4.0 5.0 MSQA6V1W5T2 PACKAGE DIMENSIONS SC-88A SC-88A / SOT-353 / SC-70 SC-70 CASE 419A-02 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A-01 OBSOLETE. NEW STANDARD 419A-02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G 5 4 -B- S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC -0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC -0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MSQA6V1W5T2/D