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Part : MSM514256B-60J Supplier : OK International Manufacturer : Bristol Electronics Stock : 430 Best Price : $0.7350 Price Each : $2.10
Part : MSM514256C-70RS Supplier : OKI Electric Industry Manufacturer : New Advantage Stock : 200 Best Price : - Price Each : -
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MSM514256 Datasheet

Part Manufacturer Description PDF Type
MSM514256 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MSM514256-10 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MSM514256-10JS OKI Semiconductor 262,144-words x 4-Bits Dynamic DRAM Scan
MSM514256-10RS OKI Semiconductor 262,144-words x 4-Bits Dynamic DRAM Scan
MSM514256-10ZS OKI Semiconductor 262,144-words x 4-Bits Dynamic DRAM Scan
MSM514256-12 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MSM514256-12JS OKI Semiconductor 262,144-words x 4-Bits Dynamic DRAM Scan
MSM514256-12RS OKI Semiconductor 262,144-words x 4-Bits Dynamic DRAM Scan
MSM514256-12ZS OKI Semiconductor 262,144-words x 4-Bits Dynamic DRAM Scan
MSM514256A-10JS OKI Semiconductor 262,144-word x 4-Bit Dynamic RAM Scan
MSM514256A-10RS OKI Semiconductor 262,144-word x 4-Bit Dynamic RAM Scan
MSM514256A-10ZS OKI Semiconductor 262,144-word x 4-Bit Dynamic RAM Scan
MSM514256A-12 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MSM514256A-1A N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MSM514256A-70 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
MSM514256A-70JS OKI Semiconductor 262,144-word x 4-Bit Dynamic RAM Scan
MSM514256A-70RS OKI Semiconductor 262,144-word x 4-Bit Dynamic RAM Scan
MSM514256A-70ZS OKI Semiconductor 262,144-word x 4-Bit Dynamic RAM Scan
MSM514256A-80JS OKI Semiconductor 262,144-word x 4-Bit Dynamic RAM Scan
MSM514256A-80RS OKI Semiconductor 262,144-word x 4-Bit Dynamic RAM Scan
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MSM514256

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: O K I Semiconductor MSM514256C/CL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256C / CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ, or 20-pin plastic ZIP. The MSM514256CL (the low-power version) is specially -
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MSM514256C/CL 144-W DIP20-P-300-W1 MSM514256C/CL- 26/20-P 26/20-P-300
Abstract: , Japan http://www.okisemi.com/en/ E2G0010-17-41 ¡ Semiconductor MSM514256C/CL ¡ Semiconductor This version: Jan. 1998 MSM514256C/CL Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514256C/CL achieves high integration, high-speed , /single-layer metal CMOS process. The MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic OKI Electric Industry
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DIP20-P-300-2 54-W1 SOJ26/20-P-300-1 ZIP20-P-400-1
Abstract: MSM514256C/CL q l 1/2 VCC5V±10, Ta070 1, 2, 3, 4, 5 MSM514256 MSM514256 MSM514256 MSM514256 C , MSM514256C/CL q l 2/2 VCC5V±10, Ta070 1, 2, 3, 4, 5 MSM514256 MSM514256 MSM514256 MSM514256 C , J2G0010-17-41 1998 1 MSM514256C/CL q 1997 5 ¡ MSM514256C/CL 262,144-Word×4-Bit DYNAMIC RAM n MSM514256C/CLCMOS262,144×4 41CMOS 20DIP26/20SOJ20ZIP L n l 262,144-×4 l 5V±10 l , -300-2.54-W1MSM514256C/CL-xxRS SOJ26/20-P-300-1.27 MSM514256C/CL-xxJS 20400milZIP ZIP20-P-400-1.27 MSM514256C/CL-xxZS OKI Electric Industry
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DIP20 ZIP20 MSM514256C/CLCMOS262 54-W1MSM514256C/CL- MSM514256C/CL-45 MSM514256C/CL-50 MSM514256C/CL-60 MSM514256C/CL-70
Abstract: technology. The MSM514256B/BL achieves high integration, high-speed operation, and low-power consumption due to quadruple polysilicon single metal CMOS. The MSM514256B/BL is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ, or 20-pin plastic ZIP. The MSM514256BL (the lowpower version) is specially , '¢ Package options: 20-Pin 300 mil plastic DIP (DIP20-P-300-W1) (Product: MSM514256B/BL-xxRS) 26/20-Pin 300 mil plastic SOJ (S0j26/20-P-300) (Product: MSM514256B/BL-xxJS) 20-Pin 400 mil plastic ZIP -
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14256B/BL MSM514256B/BL MSM514256B/BL- ZIP20-P-400 MSM514256B/BL-60 MSM514256B/BL-70
Abstract: O K I Semiconductor MSM514256C/CL 262,144-Word x 4-BII DYNAMIC RAM : FAST PAGE MODE TYPE E2G0010-17-41 DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514256C/CL achieves high integration, high-speed operation, and low-power , process. The MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ, or 20-pin plastic ZIP. The MSM514256CL (the low-power version) is specially designed for lower-power applications -
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26/20-P-300-1 SM514256C/CL-45 SM514256C/CL-50
Abstract: OKI Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology. The device , .) Cycle Time Power Dissipation tRAC tAA tcAC *OEA (Min.) Operating (Max.) Standby (Max.) MSM514256B/BL-60 60ns 30ns 15ns 15ns 120ns 495mW MSM514256B/BL-70 70ns 35 ns 20ns 20ns 130ns 440mW 5.5mW/ MSM514256B -
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b72U2 20-PIN MSM514256B/BL-80 MSM514256B/BL-10 SOJ26-P-300 Z4240 L7242HD 724H40
Abstract: Semiconductor MSM514256B/BL DC Characteristics Parameter Symbol Condition MSM514256 B/BL-45 MSM514256 B/BL , OKI Semiconductor MSM514256B/BL_ 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE , technology. The MSM514256B/BL achieves high integration, high-speed operation, and low-power consumption due to quadruple polysilicon single metal CMOS. The MSM514256B/BL is available in a 20-pin plastic DIP, 26/20-pin plastìc SOJ, or 20-pin plastic ZIP. The MSM514256BL (the low-power version) is specially -
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BL-45 SOJ26/20-P-300
Abstract: Power Dissipation tRAC tAA tcAC toEA (Min.) Operating (Max.) Standby (Max.) MSM514256H-45 45ns 24ns 14ns 14ns 90ns 550mW MSM514256H-50 50ns 26ns 14ns 14ns 100ns 523mW 5.5mW MSM514256H-60 60ns 30ns 15ns 15ns 120ns 468mW This Material Copyrighted By Its Respective Manufacturer MSM514256H OKI , OKI Semiconductor MSM514256H 262,144-Word x 4-Bit DYNAMIC RAM DESCRIPTION The MSM514256H is , MSM514256H is OKI's CMOS silicon gate process technology. The device operates at a single 5V power supply -
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26-PIN package zip-20 514256 26-P-300 2424D 72H240
Abstract: OKI Semiconductor MSM514256B / MSM514256BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B / BL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256B/BL achieves high integration, high-speed operation, and low-power consumption due to quadruple polysilicon single metal CMOS. The MSM514256B/BL is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ, or 20-pin plastic ZIP. The MSM514256BL (the lowpower version) is specially -
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Abstract: .) MSM514256H-45 45ns 24ns 14ns 14ns 90ns 550mW MSM514256H-50 50ns 26ns 14ns 14ns 100ns 523mW MSM514256H-60 60ns 30ns 15ns 15ns 120ns 468mW fc,?2U2H0 0 0 1 7 6 1 b 74b â  5.5mW 129 MSM514256H O K I Semiconductor PIN CONFIGURATION (TOP , O K I Semiconductor MSM514256H 262,144-Word x 4-Bit DYNAMIC RAM DESCRIPTION The MSM514256H is , the MSM514256H is OKI's CMOS silicon gate process technology. The device operates at a single 5V -
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7B4E40 72424Q 24E4G 72M240
Abstract: tCAC toEA (Min.) Operating (Max.) Standby (Max.) MSM514256H-45 45 is 24 ns 14 ns 14 ns 90 ns 550 mW MSM514256H-50 50 ns 26 ns 14 ns 14 ns 100 ns 523 mW 5.5 mW MSM514256H-60 60 ns 30 ns 15 ns 15 ns 120 ns 468 , -300-W1) (Product : MSM514256H-xxRS) (SOJ26/20-P-300) (Product : MSM514256H-xxJS) (ZIP20-P-400) (Product : MSM514256H-xxZS) xx indicates speed rank. 20-Pin 300 mil plastic DIP 26/20-Pin 300 mil plastic SOJ 20-Pin 400 , Semiconductor MSM514256H 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION -
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dip26 MSM514256H- 724B40
Abstract: O K I semiconductor MSM514256B/BL 262,144-W ord x 4-Bit DYNAMIC RAM GENERAL DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology. The device operates at a single , â'¢ Built-in V bb generator circuit Input latch Family MSM514256B/BL-60 MSM514256B/BL-70 MSM514256B/BL-80 MSM 514256B/BL-10 RAS-only refresh capability Power Dissipation Operating Standby -
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MSM514256B/B MSM514256B/BL1
Abstract: Dissipation (MAX) (MIN) Operating (MAX) Standby (MAX) MSM514256A-70 70ns 140ns 468m W MSM514256A-8A/80 80ns 160ns 413mW 5.5mW MSM514256A-1A/10 100ns 190ns 358mW Single +5V supply, ±10% tolerance Input , MSM514256A_T-Hé-U -\7 262,144-WORD x 4-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM514256Aisanew generation , D â  b72M2M0 000^54=) 3Eb WOKIJ â  MSM514256Aâ _0 K 1 SEMICONDUCTOR GROUP _ _ T , capacitance (DQ1 to DQ4) C|/0 - - 7 PF 193 4bE T> â  L7242M0 0001551 TÃ"4 HOKIJ â  MSM514256Aâ - OKI -
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000R54 MSM514256A-8A/80 MSM514256A-1A/10 L1-E2-917-1 310A0 31IUM
Abstract: E2G0010-17-41 ¡ Semiconductor MSM514256C/CL ¡ Semiconductor This version: Jan. 1998 MSM514256C/CL Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514256C/CL achieves high integration, high-speed operation, and low-power consumption , MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ, or 20-pin plastic ZIP. The OKI Electric Industry
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Abstract: OKI Semiconductor MSM514256C / MSM514256CL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is available in a20-pin plastic , Input Leakage Current Symbol Condition MSM514256C/CL (Vcc = 5 V t10%, Ta = 0°C to70°C) MSM514256 -
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B72L
Abstract: O K I semiconductor MSM514256B/BL 262,144-W ord x 4-Bit DYNAMIC RAM GENERAL DESCRIPTION The M , Standby (MAX) (MAX) 495m W 440m W 385m W 330m W 5.5m W /1,4m W (L-Version) 271 MSM514256B/B L , Enable Power Supply (+5V) Ground (OV) No Connection 272 MSM514256B/BL FUNCTIONAL BLOCK DIAGRAM 273 MSM514256B/B L -ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS , - MSM514256B/B L DC CHARACTERISTICS (Vcc = 5 V ± 1 0% , T a = 0 to + 7 0°C ) MSM5Ì 4256 -
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BL70M SA73A 514256B/B 514256B/BL 514256B
Abstract: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology. The device , (Max.) Standby (Max.) tRAC *AA tcAC MSM514256B/BL-60 60ns 30ns 15ns 15ns 120ns 495mW MSM514256B/BL-70 70ns 35ns 20ns 20ns 130ns 440mW MSM514256B/BL -
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L724540 2424G 0017AD 72424D 7E4240 724S40
Abstract: Family Operating (MAX) Standby (MAX) MSM514256-10 100 ns 190 ns 413 mW 5.5 mW MSM514256-12 120 ns 220 , CHARACTERISTICS 1-46-23-17 (Vcc=5V±10%,Ta = 0to+70°C) , Note 1,2,3 Parameter Symbol MSM514256-10 MSM514256-12 , CHARACTERISTICS (CONT.) Parameter Symbol MSM514256-10 MSM514256-12 Unit Note MIN MAX MIN MAX Read command , OKI SEMICONDUCTOR GROUP IDE » g b7a4SMD OUGHEOE 7 | t MSM514256RS/JS/ZS 262,144-WORD x 4-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM514256 is a new generation dynamic RAM organized as 262,144 words -
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514256-10 A2E3 oki msm51426 MSM514256RS/JS/ZS L7E4240 DDD4213 MSM5142 T-46-23-17 L724240
Abstract: DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and low-power consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ, or 20-pin plastic ZIP. The MSM514256CL (the low-power version) is specially , '¢ Package options; 20-Pin 300 mil plastic DIP (DIP20-P-300-W1) (Product: MSM514256C/CL-xxRS) 26/20-Pin 300 -
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OF100 MSIVI514256C/CL
Abstract: -300-W1) (Product: MSM514256H-xxRS) 26/20-Pin 300 mil plastic SOJ (S0j26/20-P-300) (Product: MSM514256H-xxJS) 20-Pin 400 mil plastic ZIP (ZIP20-P-400) (Product: MSM514256H-xxZS) xx indicates speed rank. PRODUCT FAMILY Family MSM514256H-45 MSM514256H-50 MSM514256H-60 Access Time (Max.) tR A C tA A tc A C tO E A , DESCRIPTION The MSM514256H is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256H achieves high integration, high-speed operation, and low-power consumption due to -
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