MSG33003 SJC00294AED - Datasheet Archive

 

MSG33003 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 ­0.02 0.33+0.05 ­0.02 Features 5°

 

Transistors MSG33003 MSG33003 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 ­0.02 0.33+0.05 ­0.02 Features 5° 0.80±0.05 1.20±0.05 · Compatible between high breakdown voltage and high cutoff frequency · Low-noise, high-gain amplification · Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm) 0.15 min. 3 2 0.15 min. 1 0.23+0.05 ­0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5° Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open) 0.15 max. Parameter 0 to 0.01 Absolute Maximum Ratings Ta = 25°C VEBO 1 V Collector current IC 100 mA Collector power dissipation* PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package °C Marking Symbol: 5X Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12 mm × 0.8 mm. Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 Forward current transfer ratio hFE VCE = 3 V, IC = 10 mA Transition frequency fT VCE = 3 V, IC = 30 mA, f = 2 GHz Forward transfer gain S21e2 VCE = 3 V, IC = 30 mA, f = 2 GHz Min Typ Max Unit VCB = 9 V, IE = 0 1 µA VCE = 6 V, IB = 0 1 µA 1 µA 220 100 19 7.0 GHz 10.0 dB Noise figure NF VCE = 3 V, IC = 10 mA, f = 2 GHz 1.4 2.0 dB Collector output capacitance (Common base, input open circuited) Cob VCB = 3 V, IE = 0, f = 1 MHz 0.5 0.8 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: August 2003 SJC00294AED SJC00294AED 1 MSG33003 MSG33003 PC Ta IC VCE hFE IC 160 40 Forward current transfer ratio hFE 80 70 µA 60 µA 8 50 µA 40 µA 30 µA 4 20 µA 120 80 40 10 µA 0 0 0 40 80 120 0 15 10 5 1 0 0.01 6 10 0.1 1 10 GP I C 0.8 15 VCE = 3 V f = 2 GHz f = 1 MHz 0.7 10 0.6 0.5 0.4 0.3 5 0 ­5 0.2 0.1 100 0 2 4 ­10 0.1 6 1 10 Collector current IC (mA) Collector-base voltage VCB (V) NF IC 100 Collector current IC (mA) S21e2 IC S11 , S22 VCE = 3 V f = 2 GHz 12 6 VCE = 3 V IC = 10 mA 1.0 VCE = 3 V f = 2 GHz 0.5 2.0 Noise figure NF (dB) 2 Forward transfer gain S21e (dB) 100 Collector current IC (mA) Power gain GP (dB) 20 0 4 Cob VCB VCE = 3 V f = 2 GHz Collector output capacitance C (pF) (Common base, input open circuited) ob fT I C 25 2 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) Transition frequency fT (GHz) VCE = 3 V IB = 80 µA 12 Collector current IC (mA) Collector power dissipation PC (mW) 120 8 4 4 S11 S22 2 -2.0 - 0.5 0 1 10 Collector current IC (mA) 2 100 1 0 0 0.1 1 10 Collector current IC (mA) SJC00294AED SJC00294AED 100 -1.0 Forward transmission coefficient S21, Reverse transmission coefficient S12 (dB) MSG33003 MSG33003 40 S21, S12 f 20 0 S21 ­20 ­40 S12 0 Frequency f (GHz) 1 2 3 SJC00294AED SJC00294AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: · Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. · Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL