MSC81002 C127317 - Datasheet Archive

 

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY :1 @ RATED

 

MSC81002 MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY :1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD (S016) hermetically sealed ORDER CODE MSC81002 MSC81002 BRANDING 81002 PIN CONNECTION DESCRIPTION The MSC81002 MSC81002 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC81002 MSC81002 was designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Value Unit 6.25 W Device Current* 200 mA Collector-Supply Voltage* 35 V TJ Junction Temperature 200 °C T STG Storage Temperature - 65 to +200 °C 20 °C/W PDISS IC VCC Parameter Power Dissipation* (TC 75°C) THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation October 1992 1/5 MSC81002 MSC81002 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 1mA IE = 0mA 45 - - V BVEBO IE = 1mA IC = 0mA 3.5 - - V BVCER IC = 5mA RBE = 10 45 - - V I CBO VCB = 28V - - 0.5 mA hFE VCE = 5V 15 - 120 - IC = 100mA DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT c f = 1.0 GHz PIN = 0.2 W VCC = 28 V 2.0 2.2 - W f = 1.0 GHz PIN = 0.2 W VCC = 28 V 50 55 - % GP f = 1.0 GHz PIN = 0.2 W VCC = 28 V 10 10.4 - dB COB f = 1 MHz VCB = 28 V - - 3.2 pF TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY RELATIVE POWER OUTPUT vs COLLECTOR VOLTAGE 2/5 MSC81002 MSC81002 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN PIN = 0.2 W VCC = 28 V Normalized to 50 ohms FREQ. Z IN () ZCL () 0.4 GHz 4.8 + j 3.7 60.0 + j 60.0 0.6 GHz 5.4 + j 5.3 32.0 + j 48.0 1.0 GHz 6.0 + j 7.0 18.0 + j 38.0 1.2 GHz 8.2 + j 11.6 12.8 + j 36.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL POUT = Saturated VCC = 28 V Normalized to 50 ohms 3/5 MSC81002 MSC81002 TEST CIRCUIT Ref.: Dwg. No. C127317 C127317 All dimensions are in inches. Frequency 1.0 GHz PACKAGE MECHANICAL DATA 4/5 MSC81002 MSC81002 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5