MSA-0420 5965-9574E 5989-2752EN

Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features · Cascadable 50 Gain Block · 3 dB Bandwidth: DC to

Agilent MSA-0420 MSA-0420 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features · Cascadable 50 Gain Block · 3 dB Bandwidth: DC to 4.0 GHz Description · 8.5 dB Typical Gain at 1.0 GHz 200 mil BeO Package · 16.0 dBm Typical P1 dB at 1.0 GHz The MSA-0420 MSA-0420 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Agilent's 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. · Unconditionally Stable (k>1) · Hermetic Metal/Beryllia Microstrip Package Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block C block 3 IN 1 OUT MSA 2 Vd = 6.3 V 2 MSA-0420 MSA-0420 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 120 mA 850 mW +13 dBm 200°C 65 to 200°C Thermal Resistance[2,4]: jc = 40°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 25 mW/°C for TC > 166°C. 4. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 90 mA, ZO = 50 (|S21| 2) GP Power Gain GP Gain Flatness f3 dB Units Min. f = 0.1 GHz dB 7.5 f = 0.1 to 2.5 GHz dB 3 dB Bandwidth VSWR Max. 8.5 9.5 ±0.6 GHz Input VSWR Typ. ±1.0 4.3 f = 0.1 to 2.5 GHz 1.7:1 Output VSWR f = 0.1 to 2.5 GHz NF 50 Noise Figure f = 1.0 GHz dB 1.8:1 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm IP3 Third Order Intercept Point f = 1.0 GHz dBm tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 6.5 14.0 16.0 30.0 140 5.7 6.3 6.9 8.0 Note: 1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current is on the following page. 3 MSA-0420 MSA-0420 Typical Scattering Parameters (ZO = 50 , TA = 25°C, Id = 90 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .25 .25 .24 .22 .21 .20 .14 .10 .08 .10 .13 .14 .14 .16 177 173 167 160 154 148 136 136 161 178 176 163 133 91 8.6 8.6 8.6 8.5 8.5 8.3 8.1 7.9 7.4 7.0 6.6 5.9 5.3 4.5 2.70 2.69 2.69 2.67 2.66 2.60 2.54 2.48 2.34 2.24 2.13 1.97 1.83 1.69 175 170 159 149 139 129 104 80 62 39 18 3 23 343 16.4 16.5 16.5 16.4 16.3 16.1 15.6 14.8 14.3 13.7 12.6 11.9 11.3 10.5 .151 .150 .150 .152 .154 .156 .166 .181 .193 .206 .233 .253 .273 .299 1 1 1 2 2 3 4 6 5 11 18 25 33 43 .03 .04 .07 .10 .13 .16 .22 .25 .28 .31 .34 .36 .37 .37 30 59 79 92 99 109 124 139 147 157 167 176 174 162 Typical Performance, TA = 25°C (unless otherwise noted) 100 12 I d (mA) 8 Gain Flat to DC 6 8 60 G p (dB) 10 G p (dB) 9 TC = +125°C TC = +25°C 80 T = 25°C C 40 7 6 4 20 2 0.1 0.3 0.5 1.0 3.0 0 6.0 0 2 FREQUENCY (GHz) 21 12 9 8 7 7 6 70 18 9 110 7.5 I d = 110 mA I d = 110 mA I d = 30 mA I d = 90 mA Id= 60 mA I d = 90 mA 15 12 90 6.5 I d = 60 mA 6.0 I d = 30 mA 6 NF 25 NF (dB) G p (dB) GP 50 Figure 3. Power Gain vs. Current. 7.0 P1 dB (dBm) P1 dB (dBm) P1 dB 9 30 I d (mA) 24 14 5 55 4 8 Figure 2. Device Current vs. Voltage. 18 8 6 Vd (V) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 90 mA. 16 4 NF (dB) 0 0.1 GHz 1.0 GHz 2.0 GHz 5 +25 +85 5 +125 6 0.1 5.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 90 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. Ordering Information Part Numbers No. of Devices Comments MSA-0420 MSA-0420 10 Bulk 200 mil BeO Package Dimensions 4 GROUND .300 ± .025 7.62 ± .64 45° .030 .76 3 1 RF OUTPUT AND BIAS RF INPUT NO REFERENCE GROUND 2 .060 1.52 .048 ± .010 1.21 ± .25 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .128 3.25 .004 ± .002 .10 ± .05 .205 5.21 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2005 Agilent Technologies, Inc. Obsoletes 5965-9574E 5965-9574E April 4, 2005 5989-2752EN 5989-2752EN .023 .57