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MS4168A3264DS-07 256MB S4816A3264DS DDR266 DQS15 DQS16 DQS12 DQS14 DQS10 DQS11 - Datasheet Archive
MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION
MACROTRON MS4168A3264DS-07 MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB 256MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES T h e M a c r o t r o n M S4816A3264DS S4816A3264DS - 0 7 i s an 32M bit x 64 bit DDR266 DDR266 Synchronous Dynamic RAM high speed memory module. It consists of sixteen CMOS 16M x 8 bit Double Data Rate Synchronous DRAMs in TSOP packages and a 2K EEPROM in 8-pin TSOP package on a 184-pin glassepoxy substrate. Decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The product is a Dual In-line Memory Module and is intended for mounting into 184-pin edge connector sockets. Synchronous design allows precise cycle controls with the use of system clock. Range of operating frequencies and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. · 32 Megabit by 64 bit (256 Megabyte) Synchronous DDR266 DDR266 DRAM Module · JEDEC-standard 184-pin, dual in-line memory module (DIMM) · Utilizes 7ns DDR SDRAM components · Nonbuffered · 2.5V I/O (SSTL_2 compatible) · Commands entered on each positive CK edge · Internal, pipelined Double Data Rate (DDR) architecture; two data accesses per clock · Four internal banks for concurrent operation · Programmable burst lengths: 2,4 or 8 · Self Refresh and Auto Refresh Modes · Serial Presence Detect (SPD) KEY TIMING PARAMETERS PART NUMBER DESIGNATOR MS 4 168 A 3264 DS -07 PARAMETER Module Speed (uses 7ns DDR SDRAMS) Module Bus Speed DDR Synchronous Module Speed Module Configuration of 32Mb x 64 bit Clock Frequency DDR266 DDR266 CAS Latency VALUE UNIT 266 MHz 7.0 ns 133 MHz 2 Clock SDRAM Configuration of 16Mb x 8 bit 184-Pin DIMM Macrotron Systems MACROTRON SYSTEMS, INC. · 40939 Encyclopedia Circle · Fremont, CA 94538 · Phone: (510) 683-9600 1-8 Fax: (510) 651-6922 · web: www.macrotronusa.com DS.Rev1.0 (1/01) MACROTRON MS4168A3264DS-07 MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB 256MB DDR SDRAM Module PIN NAMES PIN CONFIGURATIONS P IN S YMB OL P IN S YMB OL P IN S YMB OL P IN S YMB OL P IN S YMB OL P IN S YB MOL P IN NAME F UNCT ION 1 VREF 32 A5 62 VDDQ 93 VSS 124 VSS 154 R AS A0~A13 Addres s Input (Multiplexed) 2 DQ0 33 DQ24 63 WE 94 DQ4 125 A6 155 DQ45 B A0~B A1 B ank S elect Addres s 3 VSS 34 VSS 64 DQ41 95 DQ5 126 DQ28 156 VDDQ 4 DQ1 35 DQ25 65 CAS 96 VDDQ 127 DQ29 157 CS0 DQ0~DQ63 DataInput/DataOutput 5 DQS0 36 DQS3 66 VSS 97 DQS9 128 VDDQ 158 CS1 CK0~CK2, CK0~CK2 Clock Input CKE0~CKE1 Clock Enable Input CS0~CS1 ChipS elect Input R AS R owAddres s Strobe NC CAS Column Addres s S trobe 164 VDDQ WE Write Enable 165 DQ52 VDDS P D S erial EEP R OM P ow Supply er VDDQ 166 DQ53 137 CK0 167 NC VDD P ow S upply (2.5V) er 138 CK0 168 VDD VDDQ P ow S upply for DQs (2.5V) er VDD 139 VSS 169 DQS15 DQS15 VDDID VDD Identification F lag DQ14 140 NC 170 DQ54 VSS Ground DQ15 141 A10 171 DQ55 CKE1 142 NC 172 VDDQ VREF P ow S upply for R eference er VDDQ 143 VDDQ 173 NC S DA S erial DataI/O 113 NC 144 NC 174 DQ60 S CL S erial Clock 114 DQ20 175 DQ61 DU Don't Us e DQ57 115 NC 145 VSS 176 VSS 85 VDD 116 VSS 146 DQ36 177 DQS16 DQS16 NC No Connection 86 DQS7 117 DQ21 147 DQ37 178 DQ62 S A0~2 Addres s in EEP R OM Write P rotection 6 DQ2 37 A4 67 DQS5 98 DQ6 129 DQS12 DQS12 159 DQS14 DQS14 7 VDD 38 VDD 68 DQ42 99 DQ7 130 A3 160 VSS 8 DQ3 39 DQ26 69 DQ43 100 VSS 131 DQ30 161 DQ46 9 NC 40 DQ27 70 VDD 101 NC 132 VSS 162 DQ47 10 NC 41 A2 71 NC 102 NC 133 DQ31 163 11 VSS 42 VSS 72 DQ48 103 NC 134 NC 12 DQ8 43 A1 73 DQ49 104 VDDQ 135 NC 13 DQ9 44 NC 74 VSS 105 DQ12 136 14 DQS1 45 NC 75 CK2 106 DQ13 15 VDDQ 46 VDD 76 CK2 107 DQS10 DQS10 16 CK1 47 NC 77 VDDQ 108 17 CK1 48 A0 78 DQS6 109 18 VSS 49 NC 79 DQ50 110 19 DQ10 50 VSS 80 DQ51 111 20 DQ11 51 NC 81 VSS 112 21 CKE0 52 B A1 82 VDDID 22 VDDQ 83 DQ56 23 DQ16 53 DQ32 84 24 DQ17 54 VDDQ 25 DQS2 55 DQ33 26 VSS KEY 56 DQS4 87 DQ58 118 A11 KEY 148 179 VDD DQ63 WP NC No Connection CB 0~7 Check B it (Data-In/Data-Out) DQS0~DQS 7 LowDataS trobes DQS9~DQS 16 LowDataMas k/High DataStrobes 27 A9 57 DQ34 88 DQ59 119 DQS11 DQS11 149 DQS13 DQS13 180 VDDQ 28 DQ18 58 VSS 89 VSS 120 VDD 150 DQ38 181 S A0 29 A7 59 B A0 90 WP 121 DQ22 151 DQ39 182 S A1 30 VDDQ 60 DQ35 91 S DA 122 A8 152 VSS 183 S A2 31 DQ19 61 DQ40 92 S CL 123 DQ23 153 DQ44 184 VDDS P D .157 (4.00) MAX 5.256 (133.50) 5.244 (133.20) .079 (2.00) R (4X) 1.255 (31.88) 1.245 (31.62) .700 (17.78) TYP. .098 (2.50) D (2X) .091 (2.30) TYP. .035 (0.90) R PIN 1 .091 (2.30) TYP. .250 (6.35) TYP. .050 (1.27) TYP. PIN 92 .054 (1.37) .046 (1.17) .040 (1.02) TYP. 4.750 (120.65) MACROTRON SYSTEMS, INC. · 40939 Encyclopedia Circle · Fremont, CA 94538 · Phone: (510) 683-9600 2-8 Fax: (510) 651-6922 · web: www.macrotronusa.com DS.Rev1.0 (1/01) MACROTRON MS4168A3264DS-07 MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB 256MB DDR SDRAM Module ABSOLUTE MAXIMUM RATINGS PARAMETERS SYMBOL VALUE UNIT Voltage on any pin relative to VS S V I N, VOUT -1.0 ~ 3.6 V Voltage on VDD supply relative to VS S VDD, VDDQ -1.0 ~ 4.6 V TS T G -55 ~ +150 C Power Dissipation PD 18 W Short Circuit Current IOS 50 mA Storage Temperature DC OPERATING CONDITIONS AND CHARACTERISTICS PARAMETERS SYMBOL MIN MAX UNIT Supply Voltage VDD 2.3 2.7 V I/O Reference Voltage VR E F 0.49 x VDD 0.51 x VDD Input High Voltage (Logic 1), All Inputs VIH VR E F + 0.18 VDD + 0.3 V Input Low Voltage (Logic 0), All Inputs VIL -0.3 VR E F - 0.18 NOTES V INPUT LEAKAGE CURRENT Any input 0V < V I N < VDD WE, RAS, CAS, BA0, BA1 I I1 -32 32 µA (All other pins not under test = 0V) CS0, CS1, CKE0. CKE1 I I2 -16 16 µA CK, CK I I3 -12 12 µA DQ0-DQ63 DQ0-DQ63, IOZ -10 10 µA Output High Voltage VOH -15.2 mA Output low Voltage VOL 15.2 mA OUTPUT LEAKAGE CURRENT (DQs are disabled; 0V < VOUT < VDD DQS0~7 - DQS9~16 OUTPUT LEVELS CAPACITANCE PARAMETERS SYMBOL MAX UNIT Input/Output Capacitance: DQ, DQS, CB CI/O 14 pF Input Capacitance: (CK, CK) CI 1 24 pF Input Capacitance: A0~A13, BA0, BA1, RAS, CAS, WE CI 2 60 pF Input Capacitance (CS0, CS1, CKE0, CKE1) CI 3 30 pF MACROTRON SYSTEMS, INC. · 40939 Encyclopedia Circle · Fremont, CA 94538 · Phone: (510) 683-9600 3-8 Fax: (510) 651-6922 · web: www.macrotronusa.com DS.Rev1.0 (1/01) MACROTRON MS4168A3264DS-07 MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB 256MB DDR SDRAM Module OPERATING CONDITIONS AND MAXIMUM LIMITS MAX PARAMETER/CONDITION SYMBOL OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC MIN; UNITS IDD0 1560 mA IDDP 560 mA tRC = tRFC MIN IDD5 2480 mA tRC = 15.625 us IDD6 400 mA Standard IDD7 32 mA tCK = tCK MIN; DQ, DM, AND DQS inputs changing twice per clock cycle; Address and control inputs changing once per clock cycle; CL = 2.5 ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; CKE = LOW; tCK =tCK MIN AUTO REFRESH CURRENT: tRC > tRC (MIN) SELF REFRESH CURRENT: CKE < 0.2V AC FUNCTIONAL CHARACTERISTICS SYMBOL MIN MAX UNITS Access window of DQs from CK/CK tAC -0.75 0.75 ns CK high-level width tCH 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 tCK PARAMETERS Clock cycle time CL=2 tCK 7 15 ns Clock cycle time CL=2.5 tCK 7.5 15 ns Auto precharge write recovery plus precharge time tDAL 35 ns DQ and DM input hold time tDH 0.5 ns DQ and DM input setup time tDS 0.5 ns tDIPW 1.75 ns tDQSCK -0.75 DQS input high pulse width tDQSH 0.35 tCK DQS input low pulse width tDQSL 0.35 tCK DQS-DQ-DQ skew (first to last transition per access) tDQSQ Write command to first DQS latching transition tDQSS 0.75 DQS falling edge to CK rising - setup time tDSS 0.2 tCK DQS falling edge from CK rising - hold time tDSH 0.2 tCK tDV 0.35 tCK DQ and DM input pulse width (for each input) Access window of DQS from CK/CK DQ/DQS output valid window ns 0.5 MACROTRON SYSTEMS, INC. · 40939 Encyclopedia Circle · Fremont, CA 94538 · Phone: (510) 683-9600 4-8 0.75 ns 1.25 tCK Fax: (510) 651-6922 · web: www.macrotronusa.com DS.Rev1.0 (1/01) MACROTRON MS4168A3264DS-07 MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB 256MB DDR SDRAM Module AC FUNCTIONAL CHARACTERISTICS (continued) SYMBOL MIN MAX UNITS Data-out high-impedance window from CK/CK tHZ -0.75 0.75 ns Data-out low-impedance window from CK/CK tLZ -0.75 0.75 ns Address and control input hold time tIH 0.75 ns Address and control input setup time tIS 0.75 ns Address and control input pulse width tIPW 2 ns LOAD MODE REGISTER command cycle time tMRD 15 ns ACTIVE to PRECHARGE command tRAS 45 ACTIVE to ACTIVE/AUTO REFRESH command period tRC 65 ns tRFC 75 ns PARAMETERS AUTO REFRESH to ACTIVE/AUTO REFRESH command period 120,000 ns REFRESH to REFRESH command interval tREFC 31.2 us Average periodic refresh interval tREFI 15.6 us ACTIVE to READ or WRITE delay tRCD 20 ns PRECHARGE command period tRP 20 ns Read preamble tRPRE 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 tCK ACTIVE bank a to ACTIVE bank b command tRRD 15 ns Terminating voltage delay to VDD tVTD 0 ns tWPRE 0.25 tCK tWPRES 0 ns tWPST 0.4 tWR 15 ns Internal WRITE to READ command delay tWTR 1 tCK Exit SELF REFRESH to non-READ command tXSNR 75 ns Exit SELF REFRESH to READ command tXSRD 200 tCK DQS Write Preamble DQS Write Preamble setup time DQS Write Postamble DQS Write recovery time MACROTRON SYSTEMS, INC. · 40939 Encyclopedia Circle · Fremont, CA 94538 · Phone: (510) 683-9600 5-8 0.6 tCK Fax: (510) 651-6922 · web: www.macrotronusa.com DS.Rev1.0 (1/01) MACROTRON MS4168A3264DS-07 MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB 256MB DDR SDRAM Module SERIAL PRESENCE DETECT REFERENCE BYTE 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36-61 62 63 64 65-71 DESCRIPTION Number of bytes used Total number of SPD memory bytes Memory type Number of row addresses Number of column addresses Number of banks Module data width Module data width (continued) Module voltage interface levels SDRAM cycle time, tCK (CAS Latency = 2.5) SDRAM access from clock, tAC (CAS Latency = 2.5) Module configuration type Refresh rate/type SDRAM width (primary SDRAM) Error-checking SDRAM data width Minimum clock delay, back-to-back random column access Burst lengths supported Number of banks on SDRAM device CAS Latencies supported CS Latency WE Latency SDRAM module attributes SDRAM device attributes: general SDRAM cycle time, tCK (CAS Latency = 2) SDRAM access from clock, tAC (CAS Latency = 2) SDRAM cycle time, tCK (CAS Latency = 1) SDRAM access from clock, tAC (CAS Latency =1) Minimum row precharge time, tRP Minimum row active to row active, tRRD Minimum RAS to CAS delay, tRCD Minimum RAS pulse width, tRAS Module bank density Address and command setup time, tIS Address and command hold time, tIH Data/Data mask setup time, tDS Data/Data mask hold time, tDH Reserved SPD revision Checksum for bytes 0-62 Manufacturer's JEDEC ID code Manufacturer's JEDEC ID code (continued) ENTRY (VERSION) 128 256 SDRAM DDR 12 9 1 or 2 64 0 SSTL 2.5V 7 0.75 NON-ECC 15.65us/SELF 8 NONE 1 2, 4, 8 4 2, 2.5 0 1 7.5 7 20 15 20 45 128MB 128MB 0.9 0.9 0.5 0.5 0 MACROTRON MACROTRON SYSTEMS, INC. · 40939 Encyclopedia Circle · Fremont, CA 94538 · Phone: (510) 683-9600 6-8 HEX VALUE 80 08 07 0C 09 02 40 00 04 70 75 00 80 08 00 01 0E 04 0C 01 02 20 00 75 70 00 00 50 3C 50 2D 20 90 90 50 50 00 00 67 7C 00 Fax: (510) 651-6922 · web: www.macrotronusa.com DS.Rev1.0 (1/01) MACROTRON MS4168A3264DS-07 MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB 256MB DDR SDRAM Module SERIAL PRESENCE DETECT REFERENCE (continued) BYTE 72 Manufacturing Location 73-90 91 Module part number (ASCII) PCB Identification code 92 93 94 95-98 99-127 DESCRIPTION ENTRY (VERSION) 1 2 3 4 5 6 7 8 9 0 Identification code (continued) Year of manufacturer in BCD Week of manufacturer in BCD Module serial number Manufacturer-specific data (RSVD) MACROTRON SYSTEMS, INC. · 40939 Encyclopedia Circle · Fremont, CA 94538 · Phone: (510) 683-9600 7-8 HEX VALUE 01 02 03 04 05 06 07 08 09 x 01 02 03 04 05 06 07 08 09 00 x x x Fax: (510) 651-6922 · web: www.macrotronusa.com DS.Rev1.0 (1/01) MACROTRON MS4168A3264DS-07 MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB 256MB DDR SDRAM Module FUNCTIONAL BLOCK DIAGRAM CS1 CS0 DQS0 DQS4 DQS9 DQS13 DQS13 DM CS# DQS DQ0 DQ1 D8 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 D0 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DM CS# DQS DQ0 DQ1 D5 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 D13 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DM CS# DQS DQ0 DQ1 D6 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 D14 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DM CS# DQS DQ0 DQ1 D7 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 D15 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS5 DQS10 DQS10 DM CS# DQS DQ0 DQ1 D12 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS1 DM CS# DQS DQ0 DQ1 D4 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS14 DQS14 DM CS# DQS DQ0 DQ1 D1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DM CS# DQS DQ0 DQ1 D9 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS2 DQS6 DQS11 DQS11 DQS15 DQS15 DM CS# DQS DQ0 DQ1 D10 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 D2 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS7 DQS12 DQS12 DQS16 DQS16 DM CS# DQS DQ0 DQ1 D11 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 D3 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 BA0, BA1 120 BA0, BA1: SDRAMS D0 - D15 A0-A11 A0-A11 A0-A11 A0-A11: SDRAMS D0 - D15 RAS RAS: SDRAMS D0 - D15 CAS CKE0: SDRAMS D0 - D15 CKE1 CKE1: SDRAMS D0 - D 15 SDRAM X 4 CAS: SDRAMS D0 - D15 CKE0 CK0 CK0# WE WE: SDRAMS D0 - D15 120 CK1 CK1# SDRAM X 6 120 SERIAL PD SCL A0 A1 A2 CK2 CK2# SDA SDRAM X 6 SA0 SA1 SA2 VDDQ SDRAMS D0 - D15 VDD SDRAMS D0 - D15 VREF SDRAMS D0 - D15 VSS SDRAMS D0 - D15 NOTE: All resistor values are 20 ohms unless otherwise specified. D0 - D15 = 16M x 8 DDR SDRAMs MACROTRON SYSTEMS, INC. · 40939 Encyclopedia Circle · Fremont, CA 94538 · Phone: (510) 683-9600 8-8 Fax: (510) 651-6922 · web: www.macrotronusa.com DS.Rev1.0 (1/01)