MS1226 - Datasheet Archive

 

MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1226 RF & MICROWAVE TRANSISTORS HF SSB

 

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1226 MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features · · · · · · 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 65 36 4.0 4.5 80 +200 -65 to +150 V V V A W °C °C 2.2 ° C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance MSCXXXX.PDF 10-28-98 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1226 MS1226 ELECTRICAL SPECIFICATIONS (Tcase = 25° C) 25° STATIC Symbol Min. IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V Max. Unit 65 65 35 4.0 -10 IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA Value Typ. - -1.0 200 V V V V mA - Min. BVcbo BVces BVceo BVebo Icbo HFE Test Conditions Value Typ. Max. Unit DYNAMIC DYNAMIC Symbol Test Conditions POUT f = 30 MHz PIN = 0.48W VCE = 28V 30 - - W GP f = 30 MHz PIN = 0.48W VCE = 28V 18 - - dB IMD f = 30 MHz PIN = 0.48W VCE = 28V - - -28 Cob Condition ss f = 1 MHz VCE = 28 V VCB = 30V ICQ = 25 mA - - 65 dBC pf MSCXXXX.PDF 10-28-98 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1226 MS1226 PACKAGE MECHANICAL DATA MSCXXXX.PDF 10-28-98