MS1079 - Datasheet Archive

 

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features · · · · · 30 MHz 50 VOLTS POUT =

 

MS1079 MS1079 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features · · · · · 30 MHz 50 VOLTS POUT = 220 W GP = 13 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1079 MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) ° Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 110 55 4.0 12 320 +200 -65 to +150 V V V A W °C °C 0.7 °C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7052 Rev - 10-2002 MS1079 MS1079 25° ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Min. BVCBO BVCEO BVEBO ICEO ICES hFE Test Conditions IC = 200mA IC = 200mA IE = 20mA VCE = 30V VCE = 55V VCE = 6V Max. Unit 110 55 4.0 -15 IE = 0mA IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 10A Value Typ. - -5 10 80 V V V mA mA - DYNAMIC Symbol Min. POUT Gp IMD C COB Conditions Test Conditions Value Typ. Max. Unit f =30 MHz VCE = 50 V ICQ=150mA 220 - - WPEP f =30 MHz VCE = 50 V ICQ=150mA 13 - - dB f =30 MHz VCE = 50 V ICQ=150mA - - -30 dBc f =30 MHz VCE = 50 V ICQ=150mA 40 - - % f = 1 MHz VCB = 50 V - - 390 pF f1= 30.000 MHz f2 = 30.001 MHz 053-7052 Rev - 10-2002 MS1079 MS1079 TYPICAL PERFORMANCE 053-7052 Rev - 10-2002 MS1079 MS1079 PACKAGE MECHANICAL DATA 053-7052 Rev - 10-2002