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MRF6V14300H/HS

Catalog Datasheet MFG & Type PDF Document Tags

gsm booster circuit

Abstract: MRF5P21180H 900-1400 10 Peak Pulsed 50 25/1090 69 1.6 MRF6V14300H/HS I/O 1200-1400 330 , /HS U 10-500 1000 Peak Pulsed 50 20/450 64 0.03 MRF6V2010N/NB U , 1.2 MRF6S24140H/HS I/O 2450 140 CW 1-Tone 28 13.2/2450 45 0.29 , /W 4 PEP 2-Tone 28 18/1960 33 8.8 MRF6VP3450H/HS Cellular - To 500 MHz - , 860-900 27 AVG N -CDMA 28 20.2/880 31 0.44 MRFE6S9130H/HS I 860-900 27 AVG
Freescale Semiconductor
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MRF6VP11KH MRF6VP2600H gsm booster circuit MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit SG1009Q22009 MRF6VP21KH MRF6VP41KH/HS MRF6V2150N/NB MRF6V2300N/NB

MPC5634M

Abstract: MRF6VP11KH . SG1009­ 2 MRF6V14300H/HS. SG1009­ 2 MRF6V2010N/NB. SG1009­ 2 MRF6V2150N , MCIMX31L.SG1013­ 6 MD7IC21100N/GN/NB.SG1009­ 5 MD7IC2755N/GN.SG1009­ 7 MD7P19130H/HS , (ALPHANUMERIC LISTING) (CONTINUED) PRODUCT. PAGE NUMBER MRF6S19100H/HS. SG1009­ 4 MRF6S19100N/NB. SG1009­ 4 MRF6S19120H/HS. SG1009­ 4 MRF6S19140H/HS. SG1009­ 4 MRF6S19200H/HS. SG1009­ 4 MRF6S20010N/GN . SG1009­ 3, 4 MRF6S21050L
Freescale Semiconductor
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MPC5634M mw4ic2020nb MPC5516E S12XEQ512 MPC5602P mpx6115 DSP56311EVM DSP56311VF150 DSP56311VL150 DSP56321VF200 DSP56321VF220 DSP56321VF240

MPX6115

Abstract: S08DZ128 . SG1009­ 2 MRF6V14300H/HS. SG1009­ 2 MRF6V2010N/NB. SG1009­ 2 MRF6V2150N , MCIMX31L.SG1013­ 6 MD7IC21100N/GN/NB.SG1009­ 5 MD7IC2755N/GN.SG1009­ 7 MD7P19130H/HS , CROSS-REFERENCE (ALPHANUMERIC LISTING) (CONTINUED) PRODUCT. PAGE NUMBER MRF6S19100H/HS. SG1009­ 4 MRF6S19100N/NB. SG1009­ 4 MRF6S19120H/HS. SG1009­ 4 MRF6S19140H/HS. SG1009­ 4 MRF6S19200H/HS. SG1009­ 4 MRF6S20010N/GN .
Freescale Semiconductor
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S08DZ128 S12XDT256 SG1002 S08SG16 DSPB56364AF100 dspc56371af180 SG1000CRQ22009 SG187 SG1002Q22009 SG1004Q22009 SG1007Q22009 SG1010Q22009

800w rf power amplifier circuit diagram

Abstract: MRF6VP11KH MRF6V14300H 500 MHz 600W 19 dB 57% devices. The MRF6V10010N is in a low-cost over-molded , management. The MRF6V14300H is designed for the 1200 to 1400 MHz band as a P3dB 330W pulsed final-stage , 960­1215 MHz 1000W 20 dB MRF6V14300H 1200­1400 MHz 330W 18 dB Drain Efficiency , MRF6V14300H, the thermal performance was optimized for best pulse droop and RF performance. The typical pulse , .42 MRF6V10010N 1090 MHz 1.15 + j8.96 13.47 + j34.32 MRF6V14300H 1400 MHz 7.01 - j2.87 Figure
Freescale Semiconductor
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800w rf power amplifier circuit diagram 200W PUSH-PULL 1000w power amplifier circuit diagram 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram 50VRFLDMOSWP
Abstract: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. ! Typical Pulsed , . MRF6V14300HR3 MRF6V14300HSR3 Document Number: MRF6V14300H Rev. 10 3, 4/2010 RF Device Data Freescale Freescale Semiconductor
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NI-780 NI-780S

arco capacitors 262

Abstract: A114 Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. · Typical , . 2008. All rights reserved. MRF6V14300HR3 MRF6V14300HSR3 Document Number: MRF6V14300H Rev. 10 2
Freescale Semiconductor
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arco capacitors 262 A114 A115 AN1955 C101 JESD22

MRF6V14300H

Abstract: 250GX-0300-55-22 Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. · Typical , . 2008, 2010. All rights reserved. MRF6V14300HR3 MRF6V14300HSR3 Document Number: MRF6V14300H Rev
Freescale Semiconductor
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250GX-0300-55-22

J266

Abstract: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. · Typical Pulsed Performance: VDD = 50 Volts, IDQ = , Rev. 1, 10/2008 10 Document Number: MRF6V14300H RF Device Data Freescale Semiconductor
Freescale Semiconductor
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J266

MS08QD4

Abstract: MCF52236 . SG1009­ 2 MRF6V14300H/HS. SG1009­ 2 MRF6V2010N/NB. SG1009­ 2 MRF6V2150N , MCIMX31L.SG1013­ 6 MD7IC21100N/GN/NB.SG1009­ 5 MD7IC2755N/GN.SG1009­ 7 MD7P19130H/HS , CROSS-REFERENCE (ALPHANUMERIC LISTING) (CONTINUED) PRODUCT. PAGE NUMBER MRF6S19100H/HS. SG1009­ 4 MRF6S19100N/NB. SG1009­ 4 MRF6S19120H/HS. SG1009­ 4 MRF6S19140H/HS. SG1009­ 4 MRF6S19200H/HS. SG1009­ 4 MRF6S20010N/GN .
Freescale Semiconductor
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MS08QD4 MCF52236 MPC56xx instruction set digrf MCF52252 MMM6000 SG1000 SG1000CR SG1004 SG1007 SG1010 Q2/2009