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Part : MRF6S9125NBR1 Supplier : Freescale Semiconductor Manufacturer : Rochester Electronics Stock : 699 Best Price : $51.27 Price Each : $63.10
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MRF6S9125NR1 Datasheet

Part Manufacturer Description PDF Type
MRF6S9125NR1 Freescale Semiconductor RF Power Field Effect Transistors Original
MRF6S9125NR1 Freescale Semiconductor RF Power Field Effect Transistors Original
MRF6S9125NR1 Freescale Semiconductor RF Power Field Effect Transistors Original
MRF6S9125NR1 Freescale Semiconductor RF Power Field Effect Transistors Original

MRF6S9125NR1

Catalog Datasheet MFG & Type PDF Document Tags

A114

Abstract: 300 watts power amplifier layout rms MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and , CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB , , 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 1 , internally input matched. (continued) MRF6S9125NR1 MRF6S9125NBR1 2 RF Device Data Freescale
Freescale Semiconductor
Original
MRF6S9125N A114 300 watts power amplifier layout rms A115 capacitor 15 F 50 VDC C101 Chemi-Con DATE CODES MRF6S9125NR1/NBR1

MRF6S9125N

Abstract: CRCW121015R0FKEA Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral , , STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC , . RF Device Data Freescale Semiconductor LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 MRF6S9125NR1 , . MRF6S9125NR1 MRF6S9125NBR1 1 Table 2. Thermal Characteristics Value (1,2) Symbol Thermal Resistance , ORDER 3 APR 08 LAST SHIP 1 OCT 08 Characteristic (continued) MRF6S9125NR1 MRF6S9125NBR1 2
Freescale Semiconductor
Original
CRCW121015R0FKEA MRFE6S9125NR1 atc100b6r2 atc100b200ft500xt JESD22
Abstract: MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and , Enhancement - Mode Lateral MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE , Semiconductor MRF6S9125NR1 MRF6S9125NBR1 1 Table 2. Thermal Characteristics Value (1,2) Symbol , input matched. (continued) MRF6S9125NR1 MRF6S9125NBR1 2 RF Device Data Freescale Semiconductor Freescale Semiconductor
Original

Nippon chemi

Abstract: Nippon capacitors Reel. MRF6S9125NR1 MRF6S9125NBR1 865 - 960 MHz, 27 W AVG., 28 V SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE , reserved. MRF6S9125NR1 MRF6S9125NBR1 1 RF Device Data Freescale Semiconductor Table 2. Thermal , . (continued) MRF6S9125NR1 MRF6S9125NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical , 125 - - - - dB % dB W MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 3
Freescale Semiconductor
Original
Nippon chemi Nippon capacitors

Nippon chemi

Abstract: Nippon capacitors Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 , , STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC , , Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S9125NR1 , internally input matched. (continued) MRF6S9125NR1 MRF6S9125NBR1 2 RF Device Data Freescale , 1 dB Compression Point, CW (f = 880 MHz) MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale
Freescale Semiconductor
Original
515D107M050BB6A 700B470FW500XT A113 AN1955
Abstract: Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 , 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1(MR1) CASE 1484 - 02, STYLE 1 TO - 272 WB , . All rights reserved. RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 , ) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 2 RF Device Data Freescale Semiconductor Table 5 , 1 dB Compression Point, CW (f = 880 MHz) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Freescale Semiconductor
Original
MRF6S9125

A113

Abstract: A114 Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 , PLASTIC MRF6S9125NR1(MR1) CASE 1484 - 02, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1(MBR1 , Semiconductor MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 1 Table 2. Thermal Characteristics , . (continued) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 2 RF Device Data Freescale , Loss Pout @ 1 dB Compression Point, CW (f = 880 MHz) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1
Freescale Semiconductor
Original

GPS52

Abstract: MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1(MR1) CASE 1484 , observed. Freescale Semiconductor, Inc., 2005. All rights reserved. MRF6S9125NR1 MRF6S9125NBR1 , . (continued) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 2 RF Device Data Freescale Semiconductor , MHz) Gps D IRL P1dB - - - - 19 62 - 12 125 - - - - dB % dB W MRF6S9125NR1 MRF6S9125NBR1
Freescale Semiconductor
Original
GPS52

MRF6S9125MBR1

Abstract: MRF6S9125MR1 Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 2, 2/2006 Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF6S9125MR1 MRF6S9125MBR1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs N - CDMA Application ·
Freescale Semiconductor
Original
TO272 J194 IPC 1725

T491B476K016AT

Abstract: CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB
Freescale Semiconductor
Original
T491B476K016AT MRFE6S9125N MRFE6S9125NBR1
Abstract: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 2, 2/2006 Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF6S9125MR1 MRF6S9125MBR1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs N - CDMA Application â Freescale Semiconductor
Original

T491B476K016AT

Abstract: CRCW121015R0FKEA - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC
Freescale Semiconductor
Original
J037 ATC100B5R1BT250XT

stripline directional couplers

Abstract: MRFP36030 RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What's New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3, MW6S010NR1, MW6S010GNR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base , -Tone 26 16.5/880 39 0.45 375B/1 MRF6S9125NR1(18a) I 880 27 AVG N-CDMA 28
Freescale Semiconductor
Original
MRF5S9080NB stripline directional couplers MRFP36030 MRF1511NT1 ESD NONLINEAR MODEL LDMOS mrf6s19100nb MRF6S18060NR1 MRF6S18060NBR1 MHV5IC2215NR2 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19100NR1

MMM6029

Abstract: NONLINEAR MODEL LDMOS Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1 , , Class AB (continued) MRF6S9125NR1(18a) I 880 27 AVG N-CDMA 28 20.2/880 31 0.44
Freescale Semiconductor
Original
MMM6035 MRF6P3300HR3 MRF6P3300HR5 MMM6029 MMM6007 baseband DigRF MW6S010 semiconductor cross index MMM6000 SG1009Q42005 MRF6S19100NBR1 MRF6P18190HR6