MRF18090B/D MRF18090BR3 MRF18090BSR3 GSM1900 BC847 MRF18090B LP2951 5M-1994 - Datasheet Archive

 

Freescale Semiconductor, Inc. Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090BR3

 

MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090B/D MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. · GSM and EDGE Performances, Full Frequency Band Power Gain - 13.5 dB (Typ) @ 90 Watts (CW) Efficiency - 45% (Typ) @ 90 Watts (CW) · Internally Matched, Controlled Q, for Ease of Use · High Gain, High Efficiency and High Linearity · Integrated ESD Protection · Designed for Maximum Gain and Insertion Phase Flatness · Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power · Excellent Thermal Stability · Characterized with Series Equivalent Large - Signal Impedance Parameters · In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1.90 - 1.99 GHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETS CASE 465B - 03, STYLE 1 NI - 880 MRF18090BR3 MRF18090BR3 CASE 465C - 02, STYLE 1 NI - 880S MRF18090BSR3 MRF18090BSR3 MAXIMUM RATINGS Symbol Value Unit Drain - Source Voltage Rating VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RJC 0.7 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 2 (Minimum) Machine Model M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) V(BR)DSS 65 - - Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS - - 10 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS - - 1 µAdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.7 4.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) - 0.1 - Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs - 7.2 - S Crss - 4.2 - pF 12 13.5 - 40 45 - - - - 10 OFF CHARACTERISTICS Freescale Semiconductor, Inc. ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) Common - Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Gps Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 - 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) dB % IRL dB No Degradation In Output Power Before and After Test (1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 GSM1900 band, ensuring batch - to - batch consistency. MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. R1 T1 R2 Z8 VDD R3 VGG C3 R4 R5 C1 Z4 Z5 Z9 C1 C2 C3, C4 C5 C6, C7 R1 R2, R3, R6 R4 R5 T1 Z1 C5 Z10 RF OUTPUT C7 Z6 C6 Z2 Freescale Semiconductor, Inc. Z7 Z3 Z1 C4 C2 R6 RF INPUT + DUT 1.0 mF Chip Capacitor (0805) 1.0 nF Chip Capacitor (0805) 6.8 pF, 100B Chip Capacitors 220 mF, 50 V Electrolytic Capacitor 12 pF, 100B Chip Capacitors 2.2 kW Chip Resistor (0805) 1.0 kW Chip Resistors (0805) 10 k Chip Resistor (0805) 6.8 k Chip Resistor (0805) BC847 BC847 SOT - 23 0.85 x 0.09 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB Printed Inductance Printed Inductance (Butterfly) 0.70 x 0.09 Microstrip 0.36 x 0.09 Microstrip 0.21 x 1.25 Microstrip 0.45 x 1.18 Microstrip 1.37 x 0.05 Microstrip 0.39 x 0.09 Microstrip 1.25 x 0.09 Microstrip Teflon Glass Figure 1. 1.93 - 1.99 MHz Test Fixture Schematic C5 R3 R5 VBIAS VSUPPLY R2 R1 T1 R4 R6 C3 C4 C1 C2 C6 C7 MRF18090B MRF18090B Ground Ground Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 3 Freescale Semiconductor, Inc. C2 C1 ÏÏÏ ÏÏÏ ÏÏÏ T1 T1 R1 VSUPPLY R6 R2 + C5 R5 R3 C3 C6 T2 R4 C4 RF INPUT C9 Z4 Z1 RF OUTPUT Z3 Z2 C8 C10 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 R1 R2, R3 R4 R5 10 k Chip Resistor (0603) R6 5 k, SMD Potentiometer T1 LP2951 LP2951 Micro - 8 Voltage Regulator T2 BC847 BC847 SOT - 23 NPN Transistor Z1 0.491 x 0.110 Microstrip Z2 0.756 x 1.260 Microstrip Z3 1.433 x 1.260 Microstrip Z4 0.567 x 0.110 Microstrip Substrate = 0.5 mm Teflon Glass 1 mF Chip Capacitors (0805) 0.1 mF Chip Capacitor (0805) 1 nF Chip Capacitor (0805) 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitors 22 pF, 100A Chip Capacitors 10 Chip Resistor (0805) 1 k Chip Resistors (0805) 2.2 k Chip Resistor (0805) Figure 3. 1.93 - 1.99 GHz Demo Board Schematic VSUPPLY C1 R1 T 1 R2 R3 Ground C2 C5 R5 C3 R4 T2 C7 C4 MRF18090B MRF18090B ÏÏ ÏÏ ÏÏ ÏÏ ÏÏ ÏÏÏÏ ÏÏ Ï ÏÏÏÏ Ï C8 R6 C6 C9 C10 Ï ÏÏÏ Ï Ï Ï Ï ÏÏÏ ÏÏÏ ÏÏ Ï Ï Freescale Semiconductor, Inc. C7 MRF18090B MRF18090B Figure 4. 1.93 - 1.99 GHz Demo Board Component Layout MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 16 140 750 mA 14 13 500 mA 12 300 mA 11 VDD = 26 Vdc f = 1990 MHz Pin = 5 W 100 80 2W 60 40 1W 20 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) 1000 12 Figure 5. Power Gain versus Output Power 14 16 18 20 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) 30 120 60 Pin = 5 W Pout , OUTPUT POWER (WATTS) h 100 80 2W 60 VDD = 26 Vdc IDQ = 750 mA 40 1W 20 0 100 50 Pout 80 40 60 30 40 20 VDD = 26 Vdc IDQ = 750 mA f = 1990 MHz 20 10 0 0 1.91 1.93 1.95 1.97 f, FREQUENCY (GHz) 1.99 2.01 0 Figure 7. Output Power versus Frequency 1 2 3 4 Pin, INPUT POWER (WATTS) 5 6 Figure 8. Output Power and Efficiency versus Input Power 16 0 Gps 14 G ps, POWER GAIN (dB) 32 Figure 6. Output Power versus Supply Voltage 120 Pout , OUTPUT POWER (WATTS) 28 , DRAIN EFFICIENCY (%) 0.1 Freescale Semiconductor, Inc. IDQ = 750 mA f = 1990 MHz 120 -5 12 -10 IRL -15 10 -20 8 VDD = 26 Vdc IDQ = 750 mA 6 1.88 1.90 1.92 1.96 1.98 1.94 f, FREQUENCY (GHz) 2.00 IRL, INPUT RETURN LOSS (dB) G ps, POWER GAIN (dB) 15 Pout , OUTPUT POWER (WATTS) IDQ = 1000 mA -25 2.02 2.04 Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 5 Freescale Semiconductor, Inc. f = 1805 MHz Zload Zo = 10 Freescale Semiconductor, Inc. f = 1990 MHz f = 1990 MHz f = 1805 MHz Zsource VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz Zsource Zload 1805 1.10 - j5.85 1.15 - j2.16 1880 1.56 - j6.75 1.13 - j2.60 1930 2.05 - j8.00 1.30 - j2.23 1990 2.30 - j7.30 0.82 - j2.90 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Large Signal Input and Output Impedance MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 4 2X 1 Q bbb M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994 5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. M B (FLANGE) 3 K 2 bbb M D T A M B M R ccc Freescale Semiconductor, Inc. bbb M T A M B ccc M T A M B T A M M T A M (INSULATOR) M N M aaa M (LID) B S M (INSULATOR) B M (LID) M H F C E T A A (FLANGE) SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465B - 03 ISSUE C NI - 880 MRF18090BR3 MRF18090BR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994 5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) 2 bbb M D T A M B M T A M B M T A M B (INSULATOR) M N ccc R M M bbb (LID) ccc M T A M B S aaa M T A M B (LID) M (INSULATOR) M M H F C E T A MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B K INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465C - 02 ISSUE A NI - 880S MRF18090BSR3 MRF18090BSR3 For More Information On This Product, Go to: www.freescale.com DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. 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E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF18090BR3 MRF18090BR3 MRF18090BSR3 MRF18090BSR3 8 MRF18090B/D MRF18090B/D MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com