MRF1550N MRF1550NT1 MRF1550FNT1 VK200 AN211A AN721 AN215A CH370 - Datasheet Archive

 

Technical Data Document Number: MRF1550N Rev. 11, 9/2006 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel

 

Freescale Semiconductor Technical Data Document Number: MRF1550N MRF1550N Rev. 11, 9/2006 RF Power Field Effect Transistors MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. · Specified Performance @ 175 MHz, 12.5 Volts Output Power - 50 Watts Power Gain - 12 dB Efficiency - 50% · Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive Features · Excellent Thermal Stability · Characterized with Series Equivalent Large - Signal Impedance Parameters · Broadband - Full Power Across the Band: 135 - 175 MHz · Broadband Demonstration Amplifier Information Available Upon Request · 200_C Capable Plastic Package · N Suffix Indicates Lead - Free Terminations. RoHS Compliant. · In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 175 MHz, 50 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1264 - 09, STYLE 1 TO - 272 - 6 WRAP PLASTIC MRF1550NT1 MRF1550NT1 CASE 1264A - 02, STYLE 1 TO - 272 - 6 PLASTIC MRF1550FNT1 MRF1550FNT1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +40 Vdc Gate - Source Voltage VGS ± 20 Vdc ID 12 Adc PD 165 0.50 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value(2) Unit RJC 0.75 °C/W Drain Current - Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. Calculated based on the formula PD = Rating Package Peak Temperature Unit 1 260 °C TJ ­ TC RJC 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) IDSS - - 1 Adc Gate - Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS - - 0.5 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 800 A) VGS(th) 1 - 3 Vdc Drain - Source On - Voltage (VGS = 5 Vdc, ID = 1.2 A) RDS(on) - - 0.5 Drain - Source On - Voltage (VGS = 10 Vdc, ID = 4.0 Adc) VDS(on) - - 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss - - 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss - - 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss - - 35 pF Gps - 14.5 - dB - 55 - % Off Characteristics On Characteristics Dynamic Characteristics RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz Drain Efficiency (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 2 RF Device Data Freescale Semiconductor VGG C10 C9 C8 + R4 C20 C21 R3 C19 C18 Z9 L4 C13 C14 VDD + L5 C7 R2 Z6 N1 RF INPUT Z1 L1 Z2 Z3 L2 Z4 Z5 C2 C3 B1 C1 C2 C3 C4, C16 C5 C6 C7, C17 C8, C18 C9, C19 C10 C11, C12 C13 C14 C15 C20 L1 L2 L3 C4 Z8 C12 L3 Z10 Z11 C17 N2 RF OUTPUT DUT C6 C1 Z7 C11 R1 C15 C16 C5 Ferroxcube #VK200 VK200 180 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 240 pF, 100 mil Chip Capacitor 300 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 0.1 F, 100 mil Chip Capacitors 470 pF, 100 mil Chip Capacitor 200 pF, 100 mil Chip Capacitors 22 pF, 100 mil Chip Capacitor 30 pF, 100 mil Chip Capacitor 6.8 pF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 18.5 nH, Coilcraft #A05T 5 nH, Coilcraft #A02T 1 Turn, #24 AWG, 0.250 ID L4 L5 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Z11 Board 1 Turn, #26 AWG, 0.240 ID 3 Turn, #24 AWG, 0.180 ID Type N Flange Mounts 5.1 , 1/4 W Chip Resistor 39 Chip Resistor (0805) 1 k, 1/8 W Chip Resistor 33 k, 1/4 W Chip Resistor 1.000 x 0.080 Microstrip 0.400 x 0.080 Microstrip 0.200 x 0.080 Microstrip 0.200 x 0.080 Microstrip 0.100 x 0.223 Microstrip 0.160 x 0.080 Microstrip 0.260 x 0.080 Microstrip 0.280 x 0.080 Microstrip 0.270 x 0.080 Microstrip 0.730 x 0.080 Microstrip Glass Teflon®, 31 mils Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS 0 135 MHz 70 VDD = 12.5 Vdc IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 80 60 175 MHz 50 155 MHz 40 30 20 10 0 -5 175 MHz -10 135 MHz -15 155 MHz VDD = 12.5 Vdc 0 1.0 2.0 3.0 4.0 Pin, INPUT POWER (WATTS) 5.0 Figure 2. Output Power versus Input Power 6.0 -20 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) 70 80 Figure 3. Input Return Loss versus Output Power MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS 16 80 175 MHz GAIN (dB) 14 h, DRAIN EFFICIENCY (%) 15 135 MHz 155 MHz 13 12 11 70 155 MHz 60 175 MHz 135 MHz 50 40 VDD = 12.5 Vdc 10 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) 70 VDD = 12.5 Vdc 30 10 80 Figure 4. Gain versus Output Power 80 80 155 MHz 135 MHz h, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 70 Figure 5. Drain Efficiency versus Output Power 70 65 175 MHz 60 155 MHz 55 175 MHz 70 135 MHz 60 50 VDD = 12.5 Vdc Pin = 35 dBm VDD = 12.5 Vdc Pin = 35 dBm 50 200 400 600 800 IDQ, BIASING CURRENT (mA) 1000 40 200 1200 Figure 6. Output Power versus Biasing Current 400 800 600 IDQ, BIASING CURRENT (mA) 1000 1200 Figure 7. Drain Efficiency versus Biasing Current 90 80 155 MHz 80 h, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 30 40 50 60 Pout, OUTPUT POWER (WATTS) 20 70 155 MHz 135 MHz 60 175 MHz 50 70 175 MHz 135 MHz 60 50 IDQ = 500 mA Pin = 35 dBm 40 30 10 11 12 13 14 VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage IDQ = 500 mA Pin = 35 dBm 15 40 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Drain Efficiency versus Supply Voltage MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS2) 1011 1010 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 10. MTTF Factor versus Junction Temperature MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 5 Zo = 10 f = 175 MHz f = 175 MHz Zin ZOL* f = 135 MHz f = 135 MHz VDD = 12.5 V, IDQ = 500 mA, Pout = 50 W f MHz ZOL* 135 4.1 + j0.5 1.0 + j0.6 155 4.2 + j1.7 1.2 + j.09 175 Zin Zin 3.7 + j2.3 0.7 + j1.1 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 11. Series Equivalent Input and Output Impedance MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 6 RF Device Data Freescale Semiconductor Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 500 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.93 - 178 4.817 80 0.009 - 39 0.86 - 176 100 0.94 - 178 2.212 69 0.009 -3 0.88 - 175 150 0.95 - 178 1.349 61 0.008 -8 0.90 - 174 200 0.95 - 178 0.892 54 0.006 - 13 0.92 - 174 250 0.96 - 178 0.648 51 0.005 -7 0.93 - 174 300 0.97 - 178 0.481 47 0.004 -8 0.95 - 174 350 0.97 - 178 0.370 46 0.005 4 0.95 - 174 400 0.98 - 178 0.304 43 0.001 15 0.97 - 174 450 0.98 - 178 0.245 43 0.005 81 0.97 - 174 500 0.98 - 178 0.209 43 0.003 84 0.97 - 174 550 0.99 - 177 0.178 41 0.007 70 0.98 - 175 600 0.98 - 178 0.149 41 0.010 106 0.96 - 175 IDQ = 2.0 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.93 - 177 4.81 80 0.003 - 119 0.93 - 178 100 0.94 - 178 2.20 69 0.006 4 0.93 - 178 150 0.95 - 178 1.35 61 0.003 -1 0.93 - 177 200 0.95 - 178 0.89 54 0.004 18 0.93 - 176 250 0.96 - 178 0.65 51 0.001 28 0.94 - 176 300 0.97 - 178 0.48 47 0.004 77 0.94 - 175 350 0.97 - 178 0.37 46 0.006 85 0.95 - 175 400 0.98 - 178 0.30 43 0.007 53 0.96 - 174 450 0.98 - 178 0.25 43 0.006 74 0.97 - 174 500 0.98 - 177 0.21 44 0.006 84 0.97 - 174 550 0.99 - 177 0.18 41 0.002 106 0.97 - 175 600 0.98 - 178 0.15 41 0.004 116 0.96 - 174 IDQ = 4.0 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.97 - 179 5.04 87 0.002 - 116 0.94 - 179 100 0.96 - 179 2.43 82 0.006 42 0.94 - 178 150 0.96 - 179 1.60 77 0.004 13 0.94 - 177 200 0.96 - 179 1.14 74 0.003 43 0.95 - 176 250 0.97 - 179 0.89 71 0.004 65 0.95 - 175 300 0.97 - 179 0.71 68 0.006 68 0.95 - 175 350 0.97 - 179 0.57 67 0.006 74 0.97 - 174 MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 7 Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc) (continued) IDQ = 4.0 mA (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 400 0.97 - 179 0.49 63 0.005 58 0.97 - 173 450 0.98 - 178 0.41 63 0.005 73 0.98 - 173 500 0.98 - 178 0.36 62 0.003 128 0.98 - 173 550 0.98 - 178 0.32 58 0.004 57 0.99 - 174 600 0.98 - 178 0.27 58 0.009 83 0.98 - 174 MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 8 RF Device Data Freescale Semiconductor APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 - resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating - Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection - These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 9 AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721 AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two - port stability analysis with this device's S - parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A AN215A, "RF Small - Signal Design Using Two - Port Parameters" for a discussion of two port network theory and stability. MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A E1 B r1 aaa M 1 D1 aaa M 6 D A DRAIN ID D A 2X b1 aaa 5 M 2 D D A 5 4X e 3 6 4 4X b3 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 4 b2 4X C SEATING PLANE D SEATING PLANE A H E2 Y Y A1 L q A2 c1 NOTE 6 3 2 1 E2 VIEW Y - Y E DATUM PLANE DRAIN ID STYLE 1: PIN 1. 2. 3. 4. 5. 6. SOURCE (COMMON) DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE SOURCE (COMMON) CASE 1264 - 09 ISSUE K TO - 272- 6 WRAP PLASTIC MRF1550NT1 MRF1550NT1 NOTES: 1. CONTROLLING DIMENSION: INCH . 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.006 PER SIDE. DIMENSION D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS b1 AND b3 DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS OF THE b1 AND b2 DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 L b1 b2 b3 c1 e r1 q aaa INCHES MIN MAX 0.098 0.108 0.000 0.004 0.100 0.104 0.928 0.932 0.806 0.814 0.296 0.304 0.248 0.252 0.241 0.245 0.060 0.070 0.193 0.199 0.078 0.084 0.088 0.094 0.007 0.011 0.193 BSC 0.063 0.068 0_ 6_ 0.004 MILLIMETERS MIN MAX 2.49 2.74 0.00 0.10 2.54 2.64 23.57 23.67 20.47 20.68 7.52 7.72 6.30 6.40 6.12 6.22 1.52 1.78 4.90 5.05 1.98 2.13 2.24 2.39 0.18 0.28 4.90 BSC 1.60 1.73 0_ 6_ 0.10 MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 11 aaa 4X M P D A B b2 aaa M D A 4 E2 1 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 2X A E1 B 6 DRAIN ID 2X b1 aaa M D A 5 2 D D2 5 4X e 6 3 4 4X b3 D1 aaa M D A E A SEATING PLANE F Y NOTE 5 3 2 1 bbb C A B VIEW Y - Y c1 D DRAIN ID ZONE "J" Y A1 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 6 A2 SOURCE (COMMON) DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE SOURCE (COMMON) CASE 1264A - 02 ISSUE C TO - 272- 6 PLASTIC MRF1550FNT1 MRF1550FNT1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.006 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 4. DIMENSIONS b1 AND b3 DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS OF THE b1 AND b2 DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 5. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 6. DIMENSION A2 APPLIES WITHIN ZONE J ONLY. DIM A A1 A2 D D1 D2 E E1 E2 F P b1 b2 b3 c1 e aaa bbb INCHES MIN MAX 0.098 0.106 0.038 0.044 0.040 0.042 0.926 0.934 0.810 BSC 0.608 BSC 0.492 0.500 0.246 0.254 0.170 BSC 0.025 BSC 0.126 0.134 0.193 0.199 0.078 0.084 0.088 0.094 0.007 0.011 0.193 BSC 0.004 0.008 MILLIMETERS MIN MAX 2.49 2.69 0.96 1.12 1.02 1.07 23.52 23.72 20.57 BSC 15.44 BSC 12.50 12.70 6.25 6.45 4.32 BSC 0.64 BSC 3.20 3.40 4.90 5.05 1.98 2.13 2.24 2.39 0.178 0.279 4.90 BSC 0.10 0.20 MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 CH370 1300 N. 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For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MRF1550NT1 MRF1550NT1 MRF1550FNT1 MRF1550FNT1 Document Number: RF Device Data MRF1550N MRF1550N Rev. 11, 9/2006 Freescale Semiconductor 13