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MRF141G MACOM Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET visit Digikey Buy

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Part : MRF141G Supplier : M/A-COM Manufacturer : Richardson RFPD Stock : 365 Best Price : $148.2400 Price Each : $157.13
Part : MRF141G Supplier : M/A-COM Manufacturer : Chip1Stop Stock : 365 Best Price : $200.00 Price Each : $228.00
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MRF141G Datasheet

Part Manufacturer Description PDF Type
MRF141G Advanced Semiconductor RF FIELD-EFFECT POWER TRANSISTOR Original
MRF141G M/A-COM RF FETs, Discrete Semiconductor Products, FET RF 2N CH 28V 300W 375-04 Original
MRF141G M/A-COM 300 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Original
MRF141G Motorola FET Transistor, RF Power Field-Effect Transistor, N-Channel Enhancement-Mode MOSFET Original
MRF141G Motorola N-CHANNEL BROADBAND RF POWER MOSFET Original
MRF141G Motorola MRF141G RF Power Transistor Original
MRF141G NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original
MRF141G Motorola Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, MOSFET, RF Power, VDD=28V, 300W, Class AB, Pkg Style 375/2 Scan
MRF141G N/A FET Data Book Scan

MRF141G

Catalog Datasheet MFG & Type PDF Document Tags

MRF141G

Abstract: TOROIDS Design Considerations applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN­TO­SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus Drain Current , MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N­Channel Enhancement­Mode MOSFET Designed for , ©MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF141G 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless
Motorola
Original
TOROIDS Design Considerations arco 403 arco 406 how to build vhf tv transmitter AN211A CO-AX MRF141G/D

application MOSFET transmitters fm

Abstract: TOROIDS Design Considerations WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF141G 4.2-117 TYPICAL CHARACTERISTICS NOTE: Data shown applies to each halt of MRF141G. NOTE: Data shown applies to each half of MRF141G. Figure 4 , MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF141G 4.2-115 ELECTRICAL CHARACTERISTICS (Tc , push-pull configuration. Gps tl ¥ No Degradation in Output Power 12 45 14 55 - - dB % MRF141G 4.2-116 , Output Impedances MRF141G 4.2-118 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA RF POWER
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OCR Scan
application MOSFET transmitters fm

MRF141G

Abstract: MRF141G data sheet MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products Released - Rev. 3 Product Image , ) or information contained herein without notice. MRF141G RF Power FET 300W, 175MHz, 28V M , . MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products Released - Rev. 3 3 ADVANCED: Data , information contained herein without notice. MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products , . changes to the product(s) or information contained herein without notice. MRF141G RF Power FET 300W
M/A-COM
Original
MRF141G data sheet 175MH

MRF141G

Abstract: Nippon capacitors applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN­TO­SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus Drain , MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N­Channel Enhancement­Mode MOSFET Designed for , ©MOTOROLA RF DEVICE DATA Motorola, Inc. 1998 MRF141G 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless
Motorola
Original
Nippon capacitors 954 zener

transistor fet N-Channel RF Amplifier

Abstract: RF TOROIDS Design Considerations : Data shown applies to each half of MRF141G. NOTE: Data shown applies to each half of MRF141G. , Reliability MRF141G 300 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS , observed. REV 2 MRF141G 2-236 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS (Tc = 25 , - % V No Degradation in Output Power MOTOROLA RF DEVICE DATA MRF141G 2-237 C1 - , ) Figure 2. DC Safe Operating Area Figure 3. Gate-Source Voltage versus Case Temperature MRF141G
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OCR Scan
transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Abstract: DEVICE DATA MRF141G 2-145 TYPICAL CHARACTERISTICS fj. UNITY GAIN FREQUENCY (MHz) lD, DRAIN CURRENT (AMPS) NOTE: Data shown applies to each half of MRF141G. NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus Drain Current Figure 5 , packaging MOS devices should be observed. MOTOROLA RF DEVICE DATA MRF141G 2-143 ELECTRICAL , configuration. V = 175 MHz, No Degradation in Output Power MRF141G 2-144 MOTOROLA RF DEVICE DATA -
OCR Scan

arco 403

Abstract: MRF141G 18 Ciss 200 Crss 20 20 0 NOTE: Data shown applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. , MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141G N­Channel Enhancement­Mode MOSFET Designed for broadband commercial and , MOTOROLA RF © Motorola, Inc. 1998 DEVICE DATA MRF141G 1 PRODUCT TRANSFERRED TO M/A­COM The RF
Motorola
Original
Abstract: Voltage versus Case Temperature NOTE: D ata s h o w n a p p lie s to each h a lf o f MRF141G. NOTE : Data s h o w n a p p lie s to each h a lf o f MRF141G. Figure 4. Common Source Unity Gain Frequency , u tp u t Power · N itrid e Passivated Die fo r Enhanced R eliab ility MRF141G 300 W, 28 V, 175 , R F D E V IC E DATA 2 -3 7 9 MRF141G ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS , quivalent Figure 1. 175 MHz Test Circuit M OTOROLA RF DEVICE DATA 2-380 MRF141G TYPICAL -
OCR Scan
F141G

SU 179 transistor

Abstract: Nippon capacitors ate-S ource Voltage versus Case Temperature MOTOROLA RF DEVICE DATA MRF141G 3 TYPICAL CHARACTERISTICS fT UNITY GAIN FREQUENCY (MHz) NOTE: Data shown applies to each half of MRF141G. NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus , Simulators. See http://m otorola.com/sps/rf/desiantds/ MRF141G 300 W, 28 V, 175 MHz N -C H A N N E L , Degradation in O utput Power MRF141G 2 MOTOROLA RF DEVICE DATA R1 + o- V W BIAS 0 - 6 V
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OCR Scan
SU 179 transistor Motorola ic 1036 RF141G/D
Abstract: 0 NOTE: Data shown applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN­TO­SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. 25 Figure 4. Common Source Unity Gain , /sps/rf/designtds/ D MRF141G 300 W, 28 V, 175 MHz N­CHANNEL BROADBAND RF POWER MOSFET G G S , should be observed. REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141G 5.2­31 , 12 45 14 55 - - dB % MRF141G 5.2­32 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Motorola
Original

TOROIDS Design Considerations

Abstract: Temperature MOTOROLA RF DEVICE DATA MRF141G 2 -3 1 5 TYPICAL CHARACTERISTICS , DEVICE DATA MRF141G 2 -3 1 3 ELECTRICAL CHARACTERISTICS (Tc = 25C 'C unless otherwise noted , Power MRF141G 2 -3 1 4 MOTOROLA RF DEVICE DATA IC 12 X I WT ± =" J L1 28 V OUTPUT
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OCR Scan
Abstract: MRF141G Transistors Matched Pair of N-Channel Enhancement MOSFETs V(BR)DSS (V)65 V(BR)GSS (V) I(D) Max. (A)32.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC American Microsemiconductor
Original

MRF141G

Abstract: MOSFET RF POWER MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID 32 A VDSS 65 V VGS ±40 V PDISS 500 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C JC O O O O O O 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE 0.35 C/W CHARACTERISTICS
Advanced Semiconductor
Original
MOSFET RF POWER push pull power amplifier

u 172

Abstract: MRF141G 20 20 0 NOTE: Data shown applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source , Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N­Channel Enhancement­Mode MOSFET Designed for broadband commercial and , with a grounded iron. DESIGN CONSIDERATIONS The MRF141G is an RF Power, MOS, N­channel enhancement
M/A-COM
Original
u 172

motorola mrf

Abstract: MRF255 equivalent CROSS REFERENCE (Click on part No. to retrieve data sheet). 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341 SR341 MRF166 MRF166C MRF166W MRF171 MRF172 MRF173 MRF174 MRF175GU MRF176GU MRF177 MRF 255 SA701 SM704 SA741 SM341 PRF134 DU1215S DU1230P DU1230S DU1260T DU2805S F1215 F1207 F1220 F1260
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DU28120U DU28200M SD701 MRF255 LX802 BLF543 motorola mrf MRF255 equivalent Motorola transistors MRF mrf184 mrf5015 F2012 BLF244 BLF245 BLF245B SE701 DU2810S DU28120T

MRF648

Abstract: TPV3100 June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137 MRF138 MRF141G MRF148 MRF150 MRF151 MRF151G MRF166 MRF175GV MRF175GU MRF182 MRF182S MRF183 MRF183S MRF184 MRF184S MRF186 MRF187 MRF188 MRF224 MRF233 MRF238 MRF240 MRF240A MRF247
STMicroelectronics
Original
MRF646 MRF648 SD2909 TP9383 TPV3100 SD1393 TPV-3100 MRF238 MOTOROLA MRF275G MRF316 MRF317 MRF321 MRF323 MRF325

RF MOSFET

Abstract: MRF141G LPioaucti, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, â'¢ Guaranteed Performance
New Jersey Semiconductor
Original
RF MOSFET

blf245

Abstract: motorola MRF150 Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 Philips Motorola Motorola Motorola Motorola Motorola Motorola Philips Motorola Philips MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF Operation BLF368 MRF141G BLF278 Motorola Philips Motorola Philips Philips Motorola Philips Motorola Philips MRF176GV MRF151G MRF175GV
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Original
MRF140 motorola MRF150 MRF174 "cross-reference" mrf151g 300 SOT171A mrf171a MRF157 MRF154 MRF173CQ BLF248 BLF246B

transistors cross reference list

Abstract: MOTOROLA circuit for mrf150 PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Philips Type UHF Motorola Type BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF BLF368 MRF141G BLF278 MRF176GV MRF151G BLF248 MRF175GV BLF177 MRF157 MRF154 MRF151 MRF150 Operation Class-B Class-AB Class-AB Class-AB Class-AB Class-AB Class-AB Class-B Class-AB Class-B Class-B
Philips Semiconductors
Original
transistors cross reference list MOTOROLA circuit for mrf150 CLASS AB BLF246 transistors cross reference 744A-01

arco 402

Abstract: ¬ guration â'¢ High Voltage Replacement for MRF141G â'¢ RoHS Compliant Maximum Ratings Symbol VDSS
Microsemi
Original
arco 402 VRF141G
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