NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| MPSH11 | Central Semiconductor | Leaded Small Signal Transistor General Purpose |
1 pages, |
Original |  |
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| MPSH11 | Continental Device India Limited | Semiconductor Device Data Book 1996 |
1 pages, |
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| MPSH11 | Fairchild Semiconductor | NPN RF Transistor |
8 pages, |
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| MPSH11 | Fairchild Semiconductor | NPN RF Transistor |
8 pages, |
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| MPSH11 | Fairchild Semiconductor | NPN RF Transistor |
8 pages, |
Original | |
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| MPSH11 | Micro Electronics | Semiconductor Device Data Book |
1 pages, |
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| MPSH11 | Motorola / Freescale Semiconductor | VHF/UHF Transistors |
4 pages, |
Original | |
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| MPSH11 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
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| MPSH11 | N/A | Shortform Transistor Datasheet Guide |
1 pages, |
Scan | |
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| MPSH11 | National Semiconductor | NPN Transistors |
8 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MPSH11 MMBTH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This , MPSH11 350 2.8 125 *MMBTH11 MMBTH11 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH11 / MMBTH11 MMBTH11 , CURRENT (mA) P4 20 30 MPSH11 / MMBTH11 MMBTH11 NPN RF Transistor (continued) (continued , of Constant Gain Bandwidth Product (fT) 100 MPSH11 / MMBTH11 MMBTH11 NPN RF Transistor , Current Input Admittance vs. Frequency Forward Transfer Admittance vs. Collector Current MPSH11 ... | Original |
8 pages, |
Z-235 Q100 Ohmite RF MPSH11 MMBTH11 transistor mark l6 MPSH11 abstract |
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| Abstract: MPS-H10 MPS-H10 (SILICON) MPS-H11 NPN SILICON EPITAXIAL TRANSISTORS . . . designed for use in VHF/UHF , Capacitance - Crb = 0.35-0.65 pF - MPS-H10 MPS-H10 0.6-0.9 pF -MPS-H11 MAXIMUM RATINGS Rating Symbol Value Unit , 0.095 0.105 S 2.030 2.670 0.080 0.105 CASE 29 02 TO-92 1036 MPS-H10 MPS-H10, MPS-H11 (continued , - 1.0 MHz) MPS-H10 MPS-H10 MPS-H11 Crb 0.35 0.6 0.65 0.9 pF Collector-Base Time Constant IIC - 4.0 mAdc , (mmhos) 1037 MPS-H10 MPS-H10, MPS-H11 (continued) COMMON-BASE y PARAMETERS versus FREQUENCY (Vcb = 10 Vdc, lc ... | OCR Scan |
3 pages, |
mpsh10 MPS-H11 K MPS MPS-H10 MPS-H10 abstract |
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| Abstract: MPSH11 / MMBTH11 MMBTH11 MPSH11 MMBTH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN , Ambient Max Units MPSH11 350 2.8 125 *MMBTH11 MMBTH11 225 1.8 357 556 mW mW/°C °C/W , MPSH11/MMBTH11, Rev. B (continued) Electrical Characteristics Symbol TA = 25°C unless , Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 MPSH11 / MMBTH11 MMBTH11 NPN RF Transistor nA ON , 125 °C 0.1 25 0.05 - 40 °C 0.1 1 10 I C - COLLECTOR CURRENT (mA) 20 30 MPSH11 ... | Original |
8 pages, |
Z-235 Q100 MPSH11 MMBTH11 MPSH11 abstract |
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| Abstract: MPSH10 MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 , © Motorola, Inc. 1996 1 MPSH10 MPSH10 MPSH11 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , mAdc, VCB = 10 Vdc, f = 31.8 MHz) 2 Crb MPSH10 MPSH10 MPSH11 rb'Cc pF ps Motorola SmallÂSignal Transistors, FETs and Diodes Device Data MPSH10 MPSH10 MPSH11 PACKAGE DIMENSIONS A NOTES: 1. , 2.54 2.93  3.43  STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR 3 MPSH10 MPSH10 MPSH11 ... | Original |
4 pages, |
MPSH11 MPSH10 MPSH10/D MPSH10/D abstract |
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| Abstract: PROCESS CP302 CP302 Small Signal Transistor NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization Al - 30,000Ã... Back Side Metalization Au - 18,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES MPSH10 MPSH10 MPSH11 CMPTH10 CMPTH10 CMPTH11 CMPTH11 R3 (22-March 2010) w w w. c e n t r ... | Original |
2 pages, |
MPSH11 mpsh10 data sheet MPSH10 CP302 CMPTH10 MPSH10 datasheet CP302 abstract |
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| Abstract: PROCESS CP302 CP302 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization Al - 30,000Ã... Back Side Metalization Au - 18,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES MPSH10 MPSH10 MPSH11 CMPTH10 CMPTH10 CMPTH11 CMPTH11 ... | Original |
2 pages, |
MPSH11 MPSH10 datasheet MPSH10 CP302 CMPTH10 SILICON TRANSISTOR CORP CP302 abstract |
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| Abstract: 'T-3I-2I. MPSH10 MPSH10 MMBTH10 MMBTH10 MPSH11 MMBTH11 MMBTH11 È 4f T0" TO-236 92 (SOT-23) TL/G/10100-5 TL/G/10100-5 TL/G , Feedback Capacitance (VCB = 10 Vdc, lE = 0, f = 1.0 MHz) MPS-H10 MPS-H10 (Note2) MPS-H11 (Note 3) 0.35 0.6 0.65 0.9 ... | OCR Scan |
3 pages, |
t-31-21 MPSW92 MPSH11 MPSH10 MMBTH11 MMBTA92 MMBTH10 0Q37273 TL/G/10100-1 MPSW92 abstract |
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| Abstract: MPSH11 / MMBTH11 MMBTH11 MPSH11 MMBTH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN , Max Units MPSH11 350 2.8 125 *MMBTH11 MMBTH11 225 1.8 357 556 mW mW/°C °C/W °C/W , , IC = 0 100 MPSH11 / MMBTH11 MMBTH11 NPN RF Transistor nA ON CHARACTERISTICS hFE DC Current , = 25ºC 0.1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 MPSH11 / MMBTH11 MMBTH11 NPN RF , Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 MMBTH11 NPN RF Transistor 3 g ie 8 b ie 4 0 ... | Original |
16 pages, |
Z-235 Q100 PN2222N MPSH11 MMBTH11 F63TNR CBVK741B019 MPSH11 abstract |
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| Abstract: MPSH11 / MMBTH11 MMBTH11 MPSH11 MMBTH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN , Max Units MPSH11 350 2.8 125 *MMBTH11 MMBTH11 225 1.8 357 556 mW mW/°C °C/W °C/W , , IC = 0 100 MPSH11 / MMBTH11 MMBTH11 NPN RF Transistor nA ON CHARACTERISTICS hFE DC Current , = 25ºC 0.1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 MPSH11 / MMBTH11 MMBTH11 NPN RF , Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 MMBTH11 NPN RF Transistor 3 g ie 8 b ie 4 0 ... | Original |
16 pages, |
Z-235 rf transistor mark code H1 Q100 PN2222N MPSH11 MMBTH11 F63TNR CBVK741B019 MPSH11 abstract |
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| Abstract: N MPSH24 MPSH24 MMBTH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 uA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value ... | Original |
2 pages, |
MPSH24 MPSH11 MMBTH24 MPSH24 abstract |
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| Abstract: TT CM m TT CM CO CL National Semiconductor" MPSH24 MPSH24 Discrete POWER & Signal Technologies MMBTH24 MMBTH24 TO-92 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 (tA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* ta=25°cumess omesse noted ... | OCR Scan |
2 pages, |
MPSH24 MPSH11 MMBTH24 MPSH24 abstract |
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| Abstract: 0.9 TO-236* MPSH11 25 50 60 4.0 10 660 0.9 T0-92 T0-92(96) MMBTH24 MMBTH24 30 100 30 8.0 10 400 0.36 ... | OCR Scan |
1 pages, |
PN918 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179 MPSH24 2N3663 PN3563 SD113D T0-92 SD113D abstract |
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| Abstract: MPSH24 MPSH24 MMBTH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 uA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value ... | Original |
2 pages, |
MPSH24 MPSH11 MMBTH24 MPSH24 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| -16 pnp .alias MPSH11 BF199 BF199 BF199 BF199 npn .alias BF459 BF459 BF459 BF459 BF257 BF257 BF257 BF257 npn .alias BF623 BF623 BF623 BF623 MPSA92 MPSA92 MPSA92 MPSA92 pnp .alias BFY55 BFY55 BFY55 BFY55 BFX84 BFX84 BFX84 BFX84 npn www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/simetrix/bipolar.lb |
Spice Models | 29/07/2012 | 31.39 Kb | LB | bipolar.lb |
| .3 TF=245P TR=170N) *MPSH11 MCE 4/8/97 *Si 350mW 25V 50mA 650MHz RF pkg:TO-92B 1,2,3 .MODEL MPSH11 www.datasheetarchive.com/files/spicemodels/misc/modelos/mcebjt.lib |
Spice Models | 21/02/2008 | 197.99 Kb | LIB | mcebjt.lib |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| MPS-H11 | N/A | Silicon NPN | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| 2N5088 | 2N5088BU Buy | MPSH11 Buy | American Microsemiconductor Inc | Close | Small Signal | NPN General Purpose Amplifier |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| MPSH11 Buy | 2N2857 Buy | |
| MPSH11 Buy | BF180 Buy | |
| MPSH11 Buy | BF181 Buy | |
| MPSH11 Buy | BF182 Buy | |
| MPSH11 Buy | BF183 Buy | |
| MPSH11 Buy | BF689 Buy | |
| MPSH11 Buy | BF763 Buy | |
| MPS-H11 Buy | 3DG112D Buy | |
| MPS-H11 Buy | BF181 Buy | |
| MPS-H11 Buy | BF182 Buy |