NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

MPSH10 Datasheet

Part Manufacturer Description PDF Type Ordering
MPSH10 N/A Catalog Scans - Shortform Datasheet
ri

1 pages,
61.16 Kb

Scan Buy
datasheet frame
MPSH10 N/A Shortform Transistor PDF Datasheet
ri

1 pages,
157.29 Kb

Scan Buy
datasheet frame
MPSH10 National Semiconductor Shortform National Semiconductor Datasheet
ri

1 pages,
43.09 Kb

Scan Buy
datasheet frame
MPSH10 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, NPN, Bipolar, RF, 25V (BR), 4mA, Pkg Style TO92
ri

1 pages,
48.39 Kb

Scan Buy
datasheet frame
MPS-H10 N/A Basic Transistor and Cross Reference Specification
ri

1 pages,
53.97 Kb

Scan Buy
datasheet frame
MPS-H10 N/A Cross Reference Datasheet
ri

1 pages,
33.07 Kb

Scan Buy
datasheet frame
MPSH10 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
ri

1 pages,
44.91 Kb

Scan Buy
datasheet frame
MPSH10AMO N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
ri

1 pages,
44.91 Kb

Scan Buy
datasheet frame
MPSH10 N/A Shortform Transistor Datasheet Guide
ri

1 pages,
94.62 Kb

Scan Buy
datasheet frame
MPSH10 N/A Shortform Data and Cross References (Misc Datasheets)
ri

1 pages,
37.39 Kb

Scan Buy
datasheet frame

MPSH10

Catalog Datasheet Results Type PDF Document Tags
Abstract: C E B C Packing Tape Box Bulk Ordering Number Normal Lead Free Halogen Free MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10-x-T92-K MPSH10L-x-T92-K MPSH10G-x-T92-K Note: Pin assignment: E: EMITTER, C , UNISONIC TECHNOLOGIES CO., LTD MPSH10 RF TRANSISTOR DESCRIPTION NPN EPITAXIAL SILICON TRANSISTOR The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a , QW-R201-022 QW-R201-022,Ea MPSH10 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ... Original
datasheet

4 pages,
126.29 Kb

transistor l2 MPSH10G MPS-H10 mpsh10 MPSH10 MPSH10 abstract
datasheet frame
Abstract: MPS-H10 (SILICON) MPS-H11 MPS-H11 NPN SILICON EPITAXIAL TRANSISTORS . . . designed for use in VHF/UHF , Capacitance - Crb = 0.35-0.65 pF - MPS-H10 0.6-0.9 pF -MPS-H11 -MPS-H11 MAXIMUM RATINGS Rating Symbol Value Unit , 0.095 0.105 S 2.030 2.670 0.080 0.105 CASE 29 02 TO-92 1036 MPS-H10, MPS-H11 MPS-H11 (continued , - 1.0 MHz) MPS-H10 MPS-H11 MPS-H11 Crb 0.35 0.6 0.65 0.9 pF Collector-Base Time Constant IIC - 4.0 mAdc , (mmhos) 1037 MPS-H10, MPS-H11 MPS-H11 (continued) COMMON-BASE y PARAMETERS versus FREQUENCY (Vcb = 10 Vdc, lc ... OCR Scan
datasheet

3 pages,
89.78 Kb

MPSH11 MPS-H11 K MPS MPS-H10 mpsh10 datasheet abstract
datasheet frame
Abstract: FILTER LC tank BPF 46/49 MHz MPSH10 1st MIXER - 10.695 MHz cer-fil MPSH10 LOOP , LIM RSSI VCO (RX) VT DUPLEXER PRE 2nd LOCAL OSC OSCin MPSH10 SA676DK SA676DK - , XTAL AUDIO DATA out out data bus PA RFin TX VT DRV VCO (TX) MPSH10 MPSH10 ... Original
datasheet

4 pages,
19.34 Kb

455 khz ceramic filter BF510 mhz rf amplifier module PCD3354A sa576 SA676 SA676DK TEA1118 TEA1118A TEA1112 BPF filter rf wireless intercom TDA7052A-AT HEF4511 datasheet abstract
datasheet frame
Abstract: MPSH10 / MMBTH10 MMBTH10 Discrete POW ER & Signal Technologies S S M ÎO Q N Q U O T Q R MPSH10 , 2 5°C unless o th e rw ise noted Characteristic MPSH10 T o tal D evice D issipation D erate , tio n MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor (co n tin u e d ) Electrical Characteristics , V tf= 1 0 X tf= 3 0 R b= 10 ) MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor (c o n tin u e d , TEMPERATURE (°C ) MPSH10 / MMBTH10 MMBTH10 MPSH10 / MMBTH10 MMBTH10 MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor (co n ... OCR Scan
datasheet

6 pages,
139.94 Kb

mpsh10 MPSH10 MMBTH10 MPSH10 abstract
datasheet frame
Abstract: MPSH10 / MMBTH10 MMBTH10 MPSH10 MMBTH10 MMBTH10 C C E TO-92 B E SOT-23 Mark: 3E B NPN , Resistance, Junction to Ambient MPSH10 350 2.8 125 357 Max *MMBTH10 MMBTH10 225 1.8 556 Units mW mW/°C °C/W , 3-282 MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor Electrical Characteristics Symbol Parameter TA = 25°C , Vje=.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) 3-283 MPSH10 / MMBTH10 MMBTH10 NPN RF , 3-284 MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor Common Base Y Parameters vs. Frequency (continued ... Original
datasheet

6 pages,
531.38 Kb

MMBTH10 Spice Model MPS-H10 mpsh10 MPSH10 fairchild transistor MPSH10 MMBTH10 MPSH10 abstract
datasheet frame
Abstract: MPSH10 MMBTH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This , Fairchild Semiconductor Corporation Max Units MPSH10 350 2.8 125 *MMBTH10 MMBTH10 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH10 / MMBTH10 MMBTH10 Discrete POWER & Signal Technologies , Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor (continued) 100 , MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs. Frequency Output ... Original
datasheet

6 pages,
60.52 Kb

TRANSISTOR C 3223 MPSH10 MPS-H10 MMBTH10 MMBTH10 Spice Model MPSH10 fairchild transistor MPSH10 abstract
datasheet frame
Abstract: MOTOROLA Order this document by MPSH10/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 , © Motorola, Inc. 1996 1 MPSH10 MPSH11 MPSH11 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , mAdc, VCB = 10 Vdc, f = 31.8 MHz) 2 Crb MPSH10 MPSH11 MPSH11 rb'Cc pF ps Motorola Small­Signal Transistors, FETs and Diodes Device Data MPSH10 MPSH11 MPSH11 PACKAGE DIMENSIONS A NOTES: 1. ... Original
datasheet

4 pages,
77.81 Kb

MPSH11 MPS-H10 MPSH10 MPSH10/D MPSH10/D abstract
datasheet frame
Abstract: MPSH10 MMBTH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This , Units MPSH10 350 2.8 125 *MMBTH10 MMBTH10 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH10 , Xtf=30 Rb=10) MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor (continued) 100 Vce = 5V 80 125 °C , 0 25 50 75 100 TEMPERATURE ( o C) 125 150 MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor , MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency ... Original
datasheet

6 pages,
80.02 Kb

y-parameter TRANSISTOR C 3223 NPN power transistor spice MPS-H10 MMBTH10 MMBTH10 Spice Model MPSH10 MPSH10 abstract
datasheet frame
Abstract: N MPSH10 MMBTH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor , 1.6" X 0.06." Max Units MPSH10 350 2.8 125 *MMBTH10 MMBTH10 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH10 / MMBTH10 MMBTH10 Discrete POWER & Signal Technologies (continued) Electrical , Xtf=30 Rb=10) MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor (continued) 100 Vce = 5V 80 125 °C , 0 25 50 75 100 TEMPERATURE ( o C) 125 150 MPSH10 / MMBTH10 MMBTH10 NPN RF Transistor ... Original
datasheet

6 pages,
132.21 Kb

MMBTH10 NPN power transistor spice MMBTH10 Spice Model MPSH10 TRANSISTOR C 3223 MPSH10 abstract
datasheet frame
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors Order this document by MPSH10/D NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER MPSH10 MPSH11 MPSH11 Motorola Preferred Devices MAXIMUM , , Inc. 1996 1 MPSH10 MPSH11 MPSH11 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , = 0, f = 1.0 MHz) Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) MPSH10 , Transistors, FETs and Diodes Device Data MPSH10 MPSH11 MPSH11 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND ... Original
datasheet

4 pages,
55.4 Kb

MPSH10 MPSH10/D MPSH10/D abstract
datasheet frame
Abstract: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS Wideband transistors WIDEBAND TRANSISTORS FOR HIGH-SPEED SWITCHING APPLICATIONS polarity type number BSR12 BSR12 MPSH10 PMBTH10 PMBTH10 PMBTH81 PMBTH81 PnP npn npn pnp V CEO ratinas 'c P,o, «T (V) (mA) 200 40 40 40 (mW) 250 1000 400 400 (GHz) 1.5 0.65 0.65 0.6 package SOT23 TO-92 SOT23 SOT23 15 25 25 20 4-95 ... OCR Scan
datasheet

1 pages,
10.55 Kb

datasheet abstract
datasheet frame
Abstract: MPSH10/11 MPSH10/11 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM: 1. BASE 0.35 W (Tamb=25) 2. EMITTER Collector current ICM: 0.05 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= ... Original
datasheet

1 pages,
104.3 Kb

MPSH10 datasheet MPSH10/11 MPSH10/11 abstract
datasheet frame
Abstract: /°C Watts mW/°C °C MPSH10 ON Semiconductor Preferred Devices 1 2 3 CASE 29­04, STYLE 2 TO­92 , 892 October, 2001 ­ Rev. 1 Publication Order Number: MPSH10/D MPSH10 ELECTRICAL ... Original
datasheet

2 pages,
82.87 Kb

datasheet abstract
datasheet frame
Abstract: MPSH10/MMBTH10/MPSH1 1 /MMBTH11 /MMBTH11 a National Semiconductor MPSH10 MPSH 11 / MMBTH10 MMBTH10 MMBTH 11 TO-9 2 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -3 NPN RF Transistors Electrical Characteristics Symbol OFF CHARACTERISTICS v (BR)CEO T a = 25"C unless otherw ise noted Parameter Min Max Units C ollector-E m itter Breakdow n Voltage, (N ote 1) (lc = 1 0 mAdc, lg = 0) 25 , Vdc 10-70 OCR Scan
datasheet

2 pages,
33.04 Kb

NPN RF TRANSISTORS mpsh10 MPSH10/MMBTH10/MPSH1 /MMBTH11 MPSH10 MPSH10/MMBTH10/MPSH1 abstract
datasheet frame
Abstract: MPSH10/11 VHF/UHF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 °C ) Derate above 2 5 " C Collector Dissipation (Tc= 2 5 °C ) Derate above 25 , M S U N G Electronics 11 MPSH10/11 NPN EPITAXIAL SILICON TRANSISTOR COMMON-BASE y , g*( mmhos) eg SAMSUNG Electronics 117 MPSH10/11 NPN EPITAXIAL SILICON TRANSISTOR Yob ... OCR Scan
datasheet

3 pages,
98.9 Kb

transistor polar mpsh MPSH10/11 MPSH10/11 abstract
datasheet frame
Abstract: PROCESS CP302 CP302 Small Signal Transistor NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization Al - 30,000... Back Side Metalization Au - 18,000... GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES MPSH10 MPSH11 MPSH11 CMPTH10 CMPTH10 CMPTH11 CMPTH11 R3 (22-March 2010) w w w. c e n t r ... Original
datasheet

2 pages,
443.68 Kb

MPSH11 MPSH10 die mpsh10 data sheet MPSH10 CP302 CMPTH10 chip die transistor chip die npn transistor MPSH10 datasheet CP302 abstract
datasheet frame
Abstract: PROCESS CP302 CP302 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization Al - 30,000... Back Side Metalization Au - 18,000... GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES MPSH10 MPSH11 MPSH11 CMPTH10 CMPTH10 CMPTH11 CMPTH11 ... Original
datasheet

2 pages,
175.68 Kb

MPSH11 MPSH10 datasheet MPSH10 CP302 CMPTH10 chip die npn transistor SILICON TRANSISTOR CORP CP302 abstract
datasheet frame
Abstract: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHf Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Pc Ic Tj TSTG 30 25 3 250 50 150 -55 ~ +150 V V V mW mA °C °C Collector-base voltage ... Original
datasheet

1 pages,
11.75 Kb

vhf high gain transistor NPN Transistor TO92 25v MPS-H10 100MHZ MPSH10 datasheet MPSH10 MPSH10 abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
Product information page MPSH10; NPN 1 GHz general purpose switching transistor General info Silicon NPN general purpose transistor in a SOT54 (TO-92) package. PNP complement is the MPSH81 MPSH81 MPSH81 MPSH81. Features Low cost High power gain. Datsheet status Page count File size MPSH10 NPN 1 GHz general purpose switching Device Status MPSH10 MPSH10 AMO 9340 118 70126 Standard Marking * Ammopack
www.datasheetarchive.com/files/philips/pip/mpsh10_4.html
Philips 23/04/2003 2.32 Kb HTML mpsh10_4.html
MPSH10 NPN 1 GHz general purpose switching transistor ) f T (GHz) f T (GHz) MPSH10 40 25 1000 25 40 NPN Package Device Status MPSH10 MPSH10 AMO 9340 118 70126 Standard ) MPSH10 NPN 1 GHz general purpose switching transistor 27-Aug-98 Product
www.datasheetarchive.com/files/philips/pip/mpsh10_4-v1.html
Philips 14/02/2002 7.43 Kb HTML mpsh10_4-v1.html
as of 2000-01-10 Latest information online MPSH10; NPN 1 GHz general purpose switching products To be kept informed on MPSH10, subscribe to eNews. MPSH10 NPN 1 GHz general purpose switching transistor 27-Aug-98 Product Specification 8 77 Open Find similar products: MPSH10 links to the similar
www.datasheetarchive.com/files/philips/pip/mpsh10_4-v2.html
Philips 01/02/2000 22.27 Kb HTML mpsh10_4-v2.html
as of 2000-01-10 Latest information online MPSH10; NPN 1 GHz general purpose switching products To be kept informed on MPSH10, subscribe to eNews. MPSH10 NPN 1 GHz general purpose switching transistor 27-Aug-98 Product Specification 8 77 Open Find similar products: MPSH10 links to the similar
www.datasheetarchive.com/files/philips/pip/mpsh10.html
Philips 01/02/2000 22.27 Kb HTML mpsh10.html
*ZETEX MPSH10 Spice model Last revision 14/3/97 * .MODEL MPSH10 NPN IS=5.6E-16 6E-16 6E-16 6E-16 BF=133 IKF=2.5E-2 VAF=40 + ISE=6.367E-15 367E-15 367E-15 367E-15 NE=1.75 NR=0.99 BR=8 IKR=1E-2 VAR=6 + ISC=1E-15 1E-15 1E-15 1E-15 NC=1.167 RB=5 RE=0.65 RC=1.8 + CJC=1.197E-12 197E-12 197E-12 197E-12 MJC=0.2588 VJC=0.5617 CJE=1.012E-12 012E-12 012E-12 012E-12 + MJE=0.4496 VJE=1.195 RBM=0.5 IRB=5E-4 + TF=6E-11 6E-11 6E-11 6E-11 TR=40.5E-9 ITF=2.5 XTF=1000 * * (C) 1993 ZETEX PLC * * The copyright in this model and the design embodied belong to
www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/zetex/mpsh10.lib
Spice Models 29/07/2012 1.04 Kb LIB mpsh10.lib
*ZETEX MPSH10 Spice model Last revision 14/3/97 * .MODEL MPSH10 NPN IS=5.6E-16 6E-16 6E-16 6E-16 BF=133 IKF=2.5E-2 VAF=40 + ISE=6.367E-15 367E-15 367E-15 367E-15 NE=1.75 NR=0.99 BR=8 IKR=1E-2 VAR=6 + ISC=1E-15 1E-15 1E-15 1E-15 NC=1.167 RB=5 RE=0.65 RC=1.8 + CJC=1.197E-12 197E-12 197E-12 197E-12 MJC=0.2588 VJC=0.5617 CJE=1.012E-12 012E-12 012E-12 012E-12 + MJE=0.4496 VJE=1.195 RBM=0.5 IRB=5E-4 + TF=6E-11 6E-11 6E-11 6E-11 TR=40.5E-9 ITF=2.5 XTF=1000 * * (C) 1993 ZETEX PLC * * The copyright in this model and the design embodied belong to
www.datasheetarchive.com/files/zetex/spice/mpsh10.mod
Zetex 08/07/1999 1.04 Kb MOD mpsh10.mod
Order Code Description Guide Price Each Qty Add to Basket Exe. VAT Inc. VAT CR01B CR01B CR01B CR01B MPSH10 £0.162 £0.19
www.datasheetarchive.com/files/maplin/products/19/0/68prodp.htm
Maplin 28/02/2002 4.88 Kb HTM 68prodp.htm
V V mA mW Typ MHz MPSH10 TO92e 25 30 3 20
www.datasheetarchive.com/files/maplin/products/19/0/68prodd.htm
Maplin 28/02/2002 7.5 Kb HTM 68prodd.htm
MPSH10 - NPN 1 GHz general purpose switching transistor
www.datasheetarchive.com/files/philips/catalog/listing/30919.html
Philips 25/04/2003 5.33 Kb HTML 30919.html
MPSH10 - NPN 1 GHz general purpose switching transistor PMBTH10 PMBTH10 PMBTH10 PMBTH10 - NPN 1 GHz general purpose
www.datasheetarchive.com/files/philips/catalog/listing/30919-v1.html
Philips 17/02/2002 4.55 Kb HTML 30919-v1.html

Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
MPSH10 N/A RF Wideband

Shortform Datasheet

Buy
MPS-H10 N/A Silicon NPN

Shortform Datasheet

Buy
MPSH10AMO Philips Semiconductors / NXP Semiconductors Bipolar NPN UHF-Microwave Transisitor

Shortform Datasheet

Buy

CEL Cross Reference Results

CEL Part Industry Part Manufacturer Type Comments
NE58219 Buy MPSH-10 Buy Freescale Closest Equivalent NPN Silicon Amplifier and Oscillator Transistor (See-A part # for Pb-free)

Central Cross Reference Results

Central Part Industry Part Type Description
CMPTH10 Buy MPSH10 Buy SMD Small Signal Transistor NPN RF Oscillator

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
2N5088 2N5088TAR Buy MPSH10 Buy American Microsemiconductor Inc Close Small Signal NPN General Purpose Amplifier

NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE229 Buy MPSH10 Buy
NTE69 Buy MPS-H10 Buy
NTE69 Buy MPSH-10 Buy

NXP / Philips Cross Reference Results

NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
MPSH10,126 Buy MPSH10 Buy Replacement For Discontinued NXP Product

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
2N5088G Buy MPSH10AA Buy Unisonic Technologies Close
2N5088G Buy MPSH10AB Buy Unisonic Technologies Close
2N5088G Buy MPSH10-A-T92-B Buy Unisonic Technologies Close
2N5088G Buy MPSH10-A-T92-K Buy Unisonic Technologies Close
2N5088G Buy MPSH10B Buy Unisonic Technologies Close
2N5088G Buy MPSH10-B-T92-B Buy Unisonic Technologies Close
2N5088G Buy MPSH10-B-T92-K Buy Unisonic Technologies Close
2N5088G Buy MPSH10C Buy Unisonic Technologies Close
2N5088G Buy MPSH10-C-T92-B Buy Unisonic Technologies Close
2N5088G Buy MPSH10-C-T92-K Buy Unisonic Technologies Close

Misc. Cross Reference Results

Part Similar Part Notes
MPSH10 Buy 2N2857 Buy
MPSH10 Buy BF180 Buy
MPSH10 Buy BF181 Buy
MPSH10 Buy BF182 Buy
MPSH10 Buy BF183 Buy
MPSH10 Buy BF689 Buy
MPSH10 Buy BF763 Buy
MPS-H10 Buy 3DG112D Buy
MPS-H10 Buy BF181 Buy
MPS-H10 Buy BF182 Buy