| Abstract: MPS MPS MPS MPS A13 A14 A65 A66 THE MPS-A131 MPS-A131 MPS-A14 MPS-A14 (NPN) AND MPS-A65, MPS-A66 MPS-A66 (PNP) ARE SILICON , negali«. MPS-AI3(NPN) MPS-A65(PNP) mps-a14(npn; kps-a66(pnp) Collector-Emitter Voltage (Vbe=0) VCES 30V , MPS-Al3 MPS-A14 MPS-A14 MPS-A65 MPS-A66 MPS-A66 HpE * 5 10 50 75 xlO^ Xl0x xlO5 xl03 IC=10mA VCE-5V D.C. Current Gain MPS-Al3 MPS-A14 MPS-A14 MPS-A65 MPS-A66 MPS-A66 -HFE * 10 20 20 40 xlO^ xl03 xl03 xl03 l5=100mA VCE=5V Current Gain-Bandwidth Product MPS-A13 MPS-A13, MPS-A65, 14 66 fT 125 100 MHz MHz IC=10mA VCE=5V • Collector-Base Capacitance ... |
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1 pages, 96.89 Kb
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MPS-A66 MPS-A65 MPS-A14 MPS-A13 pnp MPS-A13 mps a14 mpsa14 MPS-A131 T0-92A MPS-A131 abstract |
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| Abstract: ni MPS - A65 MPS - A66 THE MPS-A15 MPS-A15, MPS-A14 MPS-A14 (NPN) AND MPS-A65, MPS-A66 MPS-A66 (PNP) ARE SILICON PLANAR , , Gain MPS-Al3 MPS-A14 MPS-A14 MPS-A65 MPS-A66 MPS-A66 HpE * 5 10 50 75 xlO3 xiol xlO5 xl03 IC=10mA VCE=5V D.C. Current Gain MPS-Al3 MPS-AI4 MPS-A65 MPS-A66 MPS-A66 -hfe * 10 20 20 40 xlO5 xlO? xl03 xl03 Ifc-lOOmA VCE=5V Current Gain-Bandwidth Product MPS-Al3, MPS-A65, 14 66 fT 125 100 MHz MHz IC=10mA VCE=5V Collector-Base ... |
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2 pages, 140.37 Kb
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MPS-A66 MPS-A65 MPS-A14 MPS-A13 pnp MPS-A13 ic 4565 mpsa15 MPS-A15 T0-92A MPS-A15 abstract |
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| Abstract: MPS-A65 (siliconi MPS-A66 MPS-A66 PNP SILICON DARLINGTON AMPLIFIER TRANSISTORS . . . designed for , Iq = 10 mAdc (MPS-A65) 75,000 (Min) @ le - 10 mAdc (MPS-A66 MPS-A66) • Collector-Emitter Breakdown Voltage - , 0.095 0.105 S 2.030 2.670 0.080 0.105 CASE 29 02 TO-92 1003 MPS-A65, MPS-A68 MPS-A68 (continued) ELECTRICAL , CHARACTERISTICS 111 DC Current Gain dC - 10 mAdc, VCE - 5 0 Vdc) MPS-A65 MPS-A66 MPS-A66 dC - 100 mAdc, VCE " 5.0 Vdc) MPS-A65 MPS-A66 MPS-A66 hFe 50,000 75.000 20.000 40,000 - - Collector-Emitter Saturation Voltage dC - ... |
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3 pages, 95.38 Kb
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MPS-A66 MPS-A65 MPS-A68 MPS-A65 abstract |
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| Abstract: MPSA65 MMBTA65 MMBTA65 PZTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring , Ambient Max Units MPSA65 625 5.0 83.3 *MMBTA65 MMBTA65 350 2.8 *PZTA65 PZTA65 1,000 8.0 200 , Fairchild Semiconductor Corporation A65, Rev A MPSA65 / MMBTA65 MMBTA65 / PZTA65 PZTA65 Discrete POWER & Signal , = 5.0 V, f = 100 MHz 100 MHz MPSA65 / MMBTA65 MMBTA65 / PZTA65 PZTA65 PNP Darlington Transistor ... |
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2 pages, 24.71 Kb
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PZTA65 MPSA65 MPSA64 MMBTA65 MPSA65 abstract |
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| Abstract: Silicon Darlington Transistor r-xj MPS-A65 MPS-A66 MPS-A66 The General Electric MPS-A65, A66 are Silicon Planar Epitaxial Passivated PNP Darlington Transistors designed for preamplifier input applications where high impedance is a requirement. absolute maximum ratings: (TA = 25°C unless otherwise , Vdc) - MPS-A65 - MPS-A66 MPS-A66 - MPS-A65 - MPS-A66 MPS-A66 Collector-Emitter Saturation Voltage (Ic = lOOmAdc , nAdc nAdc 0.9 1.45 125 2.5 2.0 1.5 2.0 Vdc Vdc MHz PF dB I 1355 MPS-A65 MPS-A66 MPS-A66 rrp ... |
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2 pages, 104.02 Kb
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MPS-A66 MPS-A65 MPS-A65 abstract |
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| Abstract: Data Sheet Central™ Semiconductor Corp. 145 Adams Ave., Hauppauge, NY 11788 USA Phone (516) 435-1110 FAX (516) 435-1824 Manufacturers of World Class Discrete Semiconductors MPSA62 MPSA62 MPSA63 MPSA63 MPSA64 MPSA64 MPSA65 MPSA66 MPSA66 PNP SILICON DARLINGTON TRANSISTORS JEDEC TO-92 CASE (EBC) DESCRIPTION The CENTRAL , ) SYMBOL MPSA62 MPSA62 MPSA63 MPSA63 MPSA6^ MPSA65 MPSA66 MPSA66 UNIT Collector-Base Voltage vCB0 20 30 30 30 30 V Col , CHARACTERISTICS MPSA62 MPSA62 MPSA63 MPSA63 MPSA64 MPSA64 MPSA65 MPSA66 MPSA66 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN ... |
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1 pages, 36.67 Kb
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MPSA66 MPSA65 MPSA64 MPSA62 MPSA63 MPSA62 abstract |
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| Abstract: Units MPSA65 625 5.0 83.3 *MMBTA65 MMBTA65 350 2.8 *PZTA65 PZTA65 1,000 8.0 200 357 125 mW , Semiconductor Corporation A65, Rev A MPSA65 / MMBTA65 MMBTA65 / PZTA65 PZTA65 MPSA65 (continued) Electrical , MPSA65 / MMBTA65 MMBTA65 / PZTA65 PZTA65 PNP Darlington Transistor TRADEMARKS The following are registered and ... |
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3 pages, 32.43 Kb
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PZTA65 MPSA64 MMBTA65 MPSA65 MPSA65 abstract |
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| Abstract: G E SOLI» STATE 01 DlF| 3075001 OGITTTE S 3875081 G E SOLID STATE 01E 17992 D Signal Transistors- - T-11-11 T-11-11 MPS-A65 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A65 is a planar epitaxial passivateci PNP applications where high impedance is a requirement. These silicon Darlington transistor designed for preamplifier input types are supplied in JEDEC TO-92 package. MAXIMUM RATINGS , ODI?™ Signal Transistors MPS-A65 T'ZI'Zl -1 -10 -100 COLLECTOR CURRENT de) - mA -1 -10 -100 ... |
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2 pages, 67.8 Kb
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MPS-A65 T-11-11 T-11-11 abstract |
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| Abstract: F* A. IR C H i L*D SS ?v? C2NDJ TOR Discrete POWER & Signal Technologies -a > 0 01 MPSA65 TO-92 MMBTA65 MMBTA65 SOT-23 B Mark: 2W PZTA65 PZTA65 SOT-223 GO Ü 0 01 -a N ü 0 01 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 MPSA64 for characteristics. Absolute Maximum Ratings" TA = 25° C , Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPSA65 *MMBTA65 MMBTA65 *PZTA65 PZTA65 ... |
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2 pages, 65.13 Kb
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PZTA65 MPSA65 MPSA64 MMBTA65 FAIRCHILD SOT-223 MARK MPSA65 abstract |
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| Abstract: Units MPSA65 625 5.0 83.3 *MMBTA65 MMBTA65 350 2.8 *PZTA65 PZTA65 1,000 8.0 200 357 125 mW , Corporation A65, Rev A MPSA65 / MMBTA65 MMBTA65 / PZTA65 PZTA65 MPSA65 (continued) Electrical Characteristics , : Pulse Width 300 祍, Duty Cycle 2.0% IC = 10 mA, VCE = 5.0 V, f = 100 MHz 100 MHz MPSA65 ... |
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12 pages, 575.42 Kb
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PZTA65 PN2222N MPSA65 MPSA64 MMBTA65 F63TNR CBVK741B019 MPSA65 abstract |
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| Abstract: 200 100 6.0 MPSA55 MPSA55 THMPSA55 THMPSA55 PNP 800 -60 -60 -4.0 100 60 - - MPSA65 THMPSA65 THMPSA65 PNP 300 -30 -30 -8.0 - - ... |
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2 pages, 42.86 Kb
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THMJE15028 D41D11 D44H10 D45H10 MJE15028 D40D11 THC40D11 THC41D11 THD44H10 THD45H10 MPSU95 0S0M33 0S0M33 abstract |
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