MPS8550 MPS8050 - Datasheet Archive

 

MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8050. N

 

SEMICONDUCTOR MPS8550 MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8050 MPS8050. N MAXIMUM RATING (Ta=25 E K ) G CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 J D V H F F V Collector Current IC -1.5 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 L Emitter-Base Voltage Storage Temperature Range 1 2 C -6 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 3 M VEBO DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V VCE=-1V, IC=-5mA 45 170 - hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300 hFE(3) VCE=-1V, IC=-800mA 40 80 - Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA - -0.28 -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA - -0.98 -1.2 V hFE(1) DC Current Gain Base-Emitter Voltage VBE VCE=-1V, IC=-10mA - -0.66 -1.0 V Transition Frequency fT VCE=-10V, IC=-50mA 100 200 - MHz - 15 - pF Collector Output Capacitance Note : hFE(2) Classification 1999. 10. 25 Cob VCB=-10V, f=1MHz, IE=0 B:85 160 , C : 120 200 , D : 160 Revision No : 1 300 1/2 MPS8550 MPS8550 1999. 10. 25 Revision No : 1 2/2