MPS650 MPS651 MPS750 MPS751 226AL MPS650/D MPS65 MPS75 - Datasheet Archive

 

NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER

 

ON Semiconductort NPN MPS650 MPS650 MPS651 MPS651 * PNP MPS750 MPS750 MPS751 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol MPS650 MPS650 MPS750 MPS750 MPS651 MPS651 MPS751 MPS751 Unit Collector­Emitter Voltage VCE 40 60 Vdc Collector­Base Voltage VCB 60 80 Vdc Emitter­Base Voltage VEB 5.0 Vdc Collector Current - Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg ­55 to +150 °C Rating Operating and Storage Junction Temperature Range 1 2 3 CASE 29­10, STYLE 1 TO­92 (TO­226AL 226AL) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 60 - - 60 80 - - 5.0 - - - 0.1 0.1 - 0.1 Unit OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector­Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO MPS650 MPS650, MPS750 MPS750 MPS651 MPS651, MPS751 MPS751 V(BR)CBO MPS650 MPS650, MPS750 MPS750 MPS651 MPS651, MPS751 MPS751 Emitter­Base Breakdown Voltage (IC = 0, IE = 10 µAdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc V(BR)EBO Vdc µAdc ICBO MPS650 MPS650, MPS750 MPS750 MPS651 MPS651, MPS751 MPS751 Emitter Cutoff Current (VEB = 4.0 V, IC = 0) IEBO Vdc µAdc 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2001 March, 2001 ­ Rev. 1 1 Publication Order Number: MPS650/D MPS650/D NPN MPS650 MPS650 MPS651 MPS651 PNP MPS750 MPS750 MPS751 MPS751 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 75 75 75 40 - - - - - - Unit 0.5 0.3 ON CHARACTERISTICS(1) DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) hFE - Collector­Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) VCE(sat) Vdc Base­Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) VBE(on) - 1.0 Vdc Base­Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VBE(sat) - 1.2 Vdc fT 75 - MHz SMALL­SIGNAL CHARACTERISTICS Current­Gain - Bandwidth Product(2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. Figure 1. http://onsemi.com 2 NPN MPS650 MPS650 MPS651 MPS651 PNP MPS750 MPS750 MPS751 MPS751 NPN PNP 300 250 240 225 VCE = 2.0 V TJ = 125°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 270 210 180 25°C 150 120 -55°C 90 TJ = 125°C 60 30 200 175 25°C 150 125 100 -55°C 75 50 25 0 10 20 50 0 -10 -20 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. MPS650 MPS650, MPS651 MPS651 Typical DC Current Gain -50 -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) Figure 2. MPS750 MPS750, MPS751 MPS751 Typical DC Current Gain NPN 2.0 PNP -2.0 -1.8 1.6 -1.6 1.4 -1.4 V, VOLTAGE (VOLTS) 1.8 V, VOLTAGE (VOLTS) VCE = -2.0 V 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.6 0.4 VBE(sat) @ IC/IB = 10 -1.0 -0.8 VBE(on) @ VCE = 2.0 V -0.6 -0.4 VCE(sat) @ IC/IB = 10 0.2 0 -1.2 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 -0.2 2.0 A 0 4.0 A -50 Figure 3. MPS650 MPS650, MPS651 MPS651 On Voltages -100 -200 -500 -1.0 A IC, COLLECTOR CURRENT (mA) Figure 4. MPS750 MPS750, MPS751 MPS751 On Voltages http://onsemi.com 3 -2.0 A -4.0 A NPN 1.0 -0.9 0.9 0.8 -0.7 -0.6 0.6 -0.5 0.5 0.3 IC = 10 mA IC = 100 mA IC = 500 mA -0.4 IC = 2.0 A -0.2 -0.1 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 NPN IC, COLLECTOR CURRENT 0.5 0.01 1.0 -50 -100 -200 -500 PNP -10 1.0 ms 1.0 0.02 IC = -100 mA -4.0 2.0 0.05 IC = -2.0 A Figure 6. MPS750 MPS750, MPS751 MPS751 Collector Saturation Region 4.0 0.1 IC = -10 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) Figure 5. MPS650 MPS650, MPS651 MPS651 Collector Saturation Region 10 IC = -500 mA -0.3 0.2 0.2 TJ = 25°C -0.8 TJ = 25°C 0.7 0.4 PNP -1.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) NPN MPS650 MPS650 MPS651 MPS651 PNP MPS750 MPS750 MPS751 MPS751 TA = 25°C 100 µs -2.0 -1.0 MPS65 MPS65 0 MPS65 MPS65 1 TC = 25°C -0.5 -0.2 -0.1 -0.05 WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 ms -0.02 -0.01 -1.0 100 Figure 7. MPS650 MPS650, MPS651 MPS651 SOA, Safe Operating Area TA = 25°C MPS75 MPS75 0 MPS75 MPS75 1 100 µs TC = 25°C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -2.0 -5.0 -10 -20 -50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. MPS750 MPS750, MPS751 MPS751 SOA, Safe Operating Area http://onsemi.com 4 -100 NPN MPS650 MPS650 MPS651 MPS651 PNP MPS750 MPS750 MPS751 MPS751 PACKAGE DIMENSIONS TO­92 (TO­226) CASE 29­10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X­X N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 5 INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 -0.250 -0.080 0.105 -0.100 0.135 - MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 -6.35 -2.04 2.66 -2.54 3.43 - NPN MPS650 MPS650 MPS651 MPS651 PNP MPS750 MPS750 MPS751 MPS751 Notes http://onsemi.com 6 NPN MPS650 MPS650 MPS651 MPS651 PNP MPS750 MPS750 MPS751 MPS751 Notes http://onsemi.com 7 NPN MPS650 MPS650 MPS651 MPS651 PNP MPS750 MPS750 MPS751 MPS751 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303­675­2175 or 800­344­3860 Toll Free USA/Canada Fax: 303­675­2176 or 800­344­3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4­32­1 Nishi­Gotanda, Shinagawa­ku, Tokyo, Japan 141­0031 Phone: 81­3­5740­2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800­282­9855 Toll Free USA/Canada http://onsemi.com 8 MPS650/D MPS650/D