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Part Manufacturer Description Datasheet BUY
V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6605IRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

MOSFET cross-reference

Catalog Datasheet MFG & Type PDF Document Tags

MOSFET cross-reference

Abstract: optocoupler crossreference System Power MOSETs for Compact Ballast Applications Power MOSFET Selection Guide PowerTrench MOSFETs , Module flyer SPMTM Catalog SPMTM Flyer Surface-Mount MOSFET package card Literature # 710003-002 , Reprints: MOSFET BGA Cover Story, Sep. 1999 PCIM Europe MOSFET Cross Conduction article - May 2001 PCIM
Fairchild Semiconductor
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HSR412

Abstract: consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven , MOSFET detctor which is parametric search driven by a photovoltaic generator. The devices are housed in a , diode optically Product selection and coupled to a power MOSFET detctor which is parametric search , to a power MOSFET detctor which is parametric search driven by a photovoltaic generator. The devices , emitting diode optically Product selection and coupled to a power MOSFET detctor which is parametric search
Fairchild Semiconductor
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uc3845 application smps

Abstract: SMPS CIRCUIT DIAGRAM UC3842 driving a Power MOSFET. The UC3842 and UC3844 have UVLO thresholds of 16V (on) and 10V (off). The UC3843 , buy products ideally suited for driving a power technical support MOSFET. Protection circuity Includes , buy products ideally suited for driving a power technical support MOSFET. Protection circuity Includes , buy products ideally suited for driving a power technical support MOSFET. Protection circuity Includes , buy products ideally suited for driving a power technical support MOSFET. Protection circuity Includes
Fairchild Semiconductor
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uc3845 application smps SMPS CIRCUIT DIAGRAM UC3842 uc3844 smps power supply uc3843 dc dc converter UC3842 smps design uc3844 reference smps UC3842/UC3843/UC3844/UC3845 500KH UC3845 14-SOP 14SOP UC3845D

SFR 252 diode

Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , 0.14 -400 125 40 60 95 65 38 -nC ns µA pF V V nA P-CHANNEL POWER MOSFET Electrical , -14 -56 -3.9 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-14A,VGS , , Duty Cycle < _ 2% O 5 Essentially Independent of Operating Temperature O P-CHANNEL POWER MOSFET , P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 2.5 Fig 7
Fairchild Semiconductor
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SFR 252 diode SFR/U9034 SFR9034 SFR9034TM SFR9034TF

SFW9Z34TM

Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition , reverse pn-diode in the MOSFET TJ=25 C,IS=-18A,VGS=0V TJ=25 C,IF=-18A diF/dt=100A/µs 4 O o o Notes , Operating Temperature O P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9Z34 Fig 2 , Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source
Fairchild Semiconductor
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SFW9Z34TM SFW9Z34 IRFW9Z34

SFU9024TU

Abstract: u9024 Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , 100 -10 -100 0.28 -600 215 60 30 50 65 50 19 -nC ns pF µA V V nA P-CHANNEL POWER MOSFET , 0.22 -7.8 -31 -3.8 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics V GS SFR/U9024 Fig 2. Transfer Characteristics [A , Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 2.5
Fairchild Semiconductor
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SFU9024TU u9024 SFR9024 IRFR9024 SFR9024TF SFR9024TM
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 3.0 -285 65 25 30 50 65 35 11 -nC ns pF µA V V nA P-CHANNEL POWER MOSFET Electrical , 0.42 -1.75 -7.0 -4.0 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9610 Fig 2. Transfer Characteristics [A] -ID , , (Normalized) Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Fairchild Semiconductor
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SFW9610 SFW9610TM
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 4.0 -295 55 20 30 45 60 30 11 -nC ns pF µA S V o P-CHANNEL POWER MOSFET Electrical , -130 0.61 -1.53 -6.1 -4.0 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C , P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS -15 V -10 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V , ) Drain-Source Breakdown Voltage 1.2 2.5 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS Fairchild Semiconductor
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SFR/U9214 SFR9214 SFR9214TM SFR9214TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , 100 -10 -100 1.5 -540 105 40 35 55 75 40 19 -nC ns pF µA V V nA P-CHANNEL POWER MOSFET , -125 0.59 -3.1 -12 -5.0 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C , P-CHANNEL POWER MOSFET Fig 1. Output Characteristics 1 10 V GS SFR/U9220 Fig 2. Transfer , MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 3.0 Fig 7. Breakdown Voltage Fairchild Semiconductor
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SFR9220 IRFR9220 SFR9220TM SFR9220TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition , the MOSFET TJ=25 C,IS=-9.7A,VGS=0V TJ=25 C,IF=-9.7A diF/dt=100A/µs 4 O o o Notes ; 1 O Repetitive , Temperature O P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9Z24 Fig 2. Transfer , MOSFET Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 2.5 Fairchild Semiconductor
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SFI9Z24 SFI9Z24TU

SFR 252 diode

Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 0.6 -550 135 45 30 50 80 45 20 -nC ns pF µA V V nA P-CHANNEL POWER MOSFET Electrical , -3.8 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-4.9A,VGS=0V TJ , < _ 2% O 5 Essentially Independent of Operating Temperature O P-CHANNEL POWER MOSFET Fig 1 , [nC] SFR/U9120 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs
Fairchild Semiconductor
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SFR9120 IRFR9120 SFR9120TM SFR9120TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 3.0 -285 65 25 30 50 65 35 11 -nC ns pF µA V V nA P-CHANNEL POWER MOSFET Electrical , 0.42 -1.6 -6.4 -4.0 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , Fairchild Semiconductor Corporation P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS - 15 V - , ) Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source Fairchild Semiconductor
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SFR/U9210 SFR9210 IRFR9210 SFR9210TM SFR9210TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -100 0.5 -310 120 40 55 115 50 59 -nC ns µA pF V V nA P-CHANNEL POWER MOSFET Electrical , 1.24 -11 -44 -5.0 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9640 Fig 2. Transfer Characteristics [A] -ID , Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 3.0 Fairchild Semiconductor
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SFI9640 SFI9640TU
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition , MOSFET TJ=25 C,IS=-6A,VGS=0V TJ=25 C,IF=-6A diF/dt=100A/µs 4 O o o Notes ; 1 O Repetitive Rating , P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS SFW/I9520 Fig 2. Transfer Characteristics [A , , Total Gate Charge [nC] SFW/I9520 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8 Fairchild Semiconductor
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SFW9520 SFW9520TM
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 0.3 -240 90 35 55 100 60 38 -nC ns µA pF V V nA P-CHANNEL POWER MOSFET Electrical , -120 0.53 -9.8 -39 -4.0 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C , P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - , MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 2.5 Fig 7. Breakdown Voltage Fairchild Semiconductor
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SFR/U9130 SFU9130 SFU9130TU
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 1.2 -335 80 25 30 50 60 35 10 -nC ns pF µA V V nA P-CHANNEL POWER MOSFET Electrical , -2.8 -11 -3.8 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics 101 V GS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - , Gate Charge [nC] SFR/U9110 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8 Fairchild Semiconductor
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SFR9110 IRFR9110 SFR9110TF SFR9110TM
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 4.0 -295 55 20 30 45 60 30 11 -nC ns pF µA S V o P-CHANNEL POWER MOSFET Electrical , 0.61 -1.6 -6.5 -4.0 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , 250µs, Duty Cycle< Essentially Independent of Operating Temperature P-CHANNEL POWER MOSFET Fig 1 , Voltage 1.2 2.5 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized Fairchild Semiconductor
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SFW/I9614 SFI9614 SFI9614TU
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 0.5 -350 135 35 30 50 50 40 11 -nC ns pF µA V V nA P-CHANNEL POWER MOSFET Electrical , -6.7 -27 -3.8 -A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9Z14 Fig 2. Transfer Characteristics [A] -ID , , Total Gate Charge [nC] SFW/I9Z14 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8 Fairchild Semiconductor
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SFI9Z14 SFI9Z14TU

MOSFET IRFI540

Abstract: irfW540a Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n , S pF V V/ V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 unless otherwise , . Units -132 0.63 28 110 1.5 -A V ns C Test Condition Integral reverse pn-diode in the MOSFET , Operating Temperature 2 N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 2 1 0 Top : VGS 15V 10 , . Temperature 1 . 2 3 . 0 N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature BVDSS
Fairchild Semiconductor
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MOSFET IRFI540 irfW540a IRFW/I540A IRFI540A IRFI540 IRFI540ATU

IRFR110A

Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , ©1999 Fairchild Semiconductor Corporation IRFR/U110A N-CHANNEL POWER MOSFET Electrical , Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=4.7A,VGS=0V TJ=25 C ,IF=5.6A diF/dt=100A/ µ s , Independent of Operating Temperature 5 O N-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS , ) Drain-Source Breakdown Voltage N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS(on
Fairchild Semiconductor
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IRFR110A IRFR110 IRFR110ATF IRFR110ATM
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