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ISL95839HRTZ-T Intersil Corporation Dual 3+1 PWM Controller with Current Monitor for IMVP-7/VR12™ CPUs; TQFN40; Temp Range: -10° to 100°C
ISL26311FBZ-T7A Intersil Corporation 12-bit, 125kSPS Low-power ADCs with Single-ended and Differential Inputs and Multiple Input Channels; SOIC8; Temp Range: -40° to 125°C
ISL28230CUZ-T7 Intersil Corporation Dual Micropower, Low Drift, RRIO Operational Amplifier; DFN8, MSOP8, SOIC8; Temp Range: See Datasheet
ISL267450AIUZ-T7A Intersil Corporation 12-Bit 1MSPS SAR ADCs; MSOP8, SOT8; Temp Range: -40° to 85°C
ISL78268ARZ-T Intersil Corporation 55V Synchronous Buck Controller with Integrated 3A Driver; QFN24; Temp Range: -40° to 125°C
HIP2103FRTAAZ-T7A Intersil Corporation 60V, 1A/2A Peak, Half Bridge Driver with 4V UVLO; DFN8; Temp Range: -40° to 125°C

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MOSFET cross-reference

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: System Power MOSETs for Compact Ballast Applications Power MOSFET Selection Guide PowerTrench MOSFETs , Module flyer SPMTM Catalog SPMTM Flyer Surface-Mount MOSFET package card Literature # 710003-002 , Reprints: MOSFET BGA Cover Story, Sep. 1999 PCIM Europe MOSFET Cross Conduction article - May 2001 PCIM Fairchild Semiconductor
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optocoupler crossreference Power MOSFET Cross Reference Guide fairchild mosfet selection guide IGBT cross-reference cfl kit using 2 mosfet logic ic databook
Abstract: consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven , MOSFET detctor which is parametric search driven by a photovoltaic generator. The devices are housed in a , diode optically Product selection and coupled to a power MOSFET detctor which is parametric search , to a power MOSFET detctor which is parametric search driven by a photovoltaic generator. The devices , emitting diode optically Product selection and coupled to a power MOSFET detctor which is parametric search Fairchild Semiconductor
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HSR312 HSR412 HSR312L HSR412L DS300310 HSR412LS
Abstract: driving a Power MOSFET. The UC3842 and UC3844 have UVLO thresholds of 16V (on) and 10V (off). The UC3843 , buy products ideally suited for driving a power technical support MOSFET. Protection circuity Includes , buy products ideally suited for driving a power technical support MOSFET. Protection circuity Includes , buy products ideally suited for driving a power technical support MOSFET. Protection circuity Includes , buy products ideally suited for driving a power technical support MOSFET. Protection circuity Includes Fairchild Semiconductor
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uc3845 application smps SMPS CIRCUIT DIAGRAM UC3842 uc3844 smps power supply uc3843 dc dc converter UC3842 smps design uc3844 reference smps UC3842/UC3843/UC3844/UC3845 500KH UC3845 14-SOP 14SOP UC3845D
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , 0.14 -400 125 40 60 95 65 38 -nC ns uA pF V V nA P-CHANNEL POWER MOSFET Electrical , -14 -56 -3.9 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-14A,VGS , , Duty Cycle < _ 2% O 5 Essentially Independent of Operating Temperature O P-CHANNEL POWER MOSFET , P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 2.5 Fig 7 Fairchild Semiconductor
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SFR 252 diode SFR/U9034 SFR9034 SFR9034TM SFR9034TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition , reverse pn-diode in the MOSFET TJ=25 C,IS=-18A,VGS=0V TJ=25 C,IF=-18A diF/dt=100A/us 4 O o o Notes , Operating Temperature O P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9Z34 Fig 2 , Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source Fairchild Semiconductor
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SFW9Z34TM SFW9Z34 IRFW9Z34
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , 100 -10 -100 0.28 -600 215 60 30 50 65 50 19 -nC ns pF uA V V nA P-CHANNEL POWER MOSFET , 0.22 -7.8 -31 -3.8 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics V GS SFR/U9024 Fig 2. Transfer Characteristics [A , Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 2.5 Fairchild Semiconductor
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SFU9024TU u9024 SFR9024 IRFR9024 SFR9024TF SFR9024TM
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 3.0 -285 65 25 30 50 65 35 11 -nC ns pF uA V V nA P-CHANNEL POWER MOSFET Electrical , 0.42 -1.75 -7.0 -4.0 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9610 Fig 2. Transfer Characteristics [A] -ID , , (Normalized) Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Fairchild Semiconductor
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SFW9610 SFW9610TM
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 4.0 -295 55 20 30 45 60 30 11 -nC ns pF uA S V o P-CHANNEL POWER MOSFET Electrical , -130 0.61 -1.53 -6.1 -4.0 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C , P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS -15 V -10 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V , ) Drain-Source Breakdown Voltage 1.2 2.5 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS Fairchild Semiconductor
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SFR/U9214 SFR9214 SFR9214TM SFR9214TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , 100 -10 -100 1.5 -540 105 40 35 55 75 40 19 -nC ns pF uA V V nA P-CHANNEL POWER MOSFET , -125 0.59 -3.1 -12 -5.0 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C , P-CHANNEL POWER MOSFET Fig 1. Output Characteristics 1 10 V GS SFR/U9220 Fig 2. Transfer , MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 3.0 Fig 7. Breakdown Voltage Fairchild Semiconductor
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SFR9220 IRFR9220 SFR9220TM SFR9220TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition , the MOSFET TJ=25 C,IS=-9.7A,VGS=0V TJ=25 C,IF=-9.7A diF/dt=100A/us 4 O o o Notes ; 1 O Repetitive , Temperature O P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9Z24 Fig 2. Transfer , MOSFET Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 2.5 Fairchild Semiconductor
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SFI9Z24 SFI9Z24TU
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 0.6 -550 135 45 30 50 80 45 20 -nC ns pF uA V V nA P-CHANNEL POWER MOSFET Electrical , -3.8 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-4.9A,VGS=0V TJ , < _ 2% O 5 Essentially Independent of Operating Temperature O P-CHANNEL POWER MOSFET Fig 1 , [nC] SFR/U9120 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs Fairchild Semiconductor
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SFR9120 IRFR9120 SFR9120TM SFR9120TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 3.0 -285 65 25 30 50 65 35 11 -nC ns pF uA V V nA P-CHANNEL POWER MOSFET Electrical , 0.42 -1.6 -6.4 -4.0 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , Fairchild Semiconductor Corporation P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS - 15 V - , ) Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source Fairchild Semiconductor
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SFR/U9210 SFR9210 IRFR9210 SFR9210TM SFR9210TF
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -100 0.5 -310 120 40 55 115 50 59 -nC ns uA pF V V nA P-CHANNEL POWER MOSFET Electrical , 1.24 -11 -44 -5.0 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9640 Fig 2. Transfer Characteristics [A] -ID , Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 3.0 Fairchild Semiconductor
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SFI9640 SFI9640TU
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition , MOSFET TJ=25 C,IS=-6A,VGS=0V TJ=25 C,IF=-6A diF/dt=100A/us 4 O o o Notes ; 1 O Repetitive Rating , P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS SFW/I9520 Fig 2. Transfer Characteristics [A , , Total Gate Charge [nC] SFW/I9520 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8 Fairchild Semiconductor
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SFW9520 SFW9520TM
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 0.3 -240 90 35 55 100 60 38 -nC ns uA pF V V nA P-CHANNEL POWER MOSFET Electrical , -120 0.53 -9.8 -39 -4.0 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C , P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - , MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 2.5 Fig 7. Breakdown Voltage Fairchild Semiconductor
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SFR/U9130 SFU9130 SFU9130TU
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 1.2 -335 80 25 30 50 60 35 10 -nC ns pF uA V V nA P-CHANNEL POWER MOSFET Electrical , -2.8 -11 -3.8 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics 101 V GS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - , Gate Charge [nC] SFR/U9110 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8 Fairchild Semiconductor
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SFR9110 IRFR9110 SFR9110TF SFR9110TM
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 4.0 -295 55 20 30 45 60 30 11 -nC ns pF uA S V o P-CHANNEL POWER MOSFET Electrical , 0.61 -1.6 -6.5 -4.0 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , 250us, Duty Cycle< Essentially Independent of Operating Temperature P-CHANNEL POWER MOSFET Fig 1 , Voltage 1.2 2.5 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized Fairchild Semiconductor
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SFW/I9614 SFI9614 SFI9614TU
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , -10 -100 0.5 -350 135 35 30 50 50 40 11 -nC ns pF uA V V nA P-CHANNEL POWER MOSFET Electrical , -6.7 -27 -3.8 -A V ns uC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS , POWER MOSFET Fig 1. Output Characteristics V GS SFW/I9Z14 Fig 2. Transfer Characteristics [A] -ID , , Total Gate Charge [nC] SFW/I9Z14 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8 Fairchild Semiconductor
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SFI9Z14 SFI9Z14TU
Abstract: Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n , S pF V V/ V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 unless otherwise , . Units -132 0.63 28 110 1.5 -A V ns C Test Condition Integral reverse pn-diode in the MOSFET , Operating Temperature 2 N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 2 1 0 Top : VGS 15V 10 , . Temperature 1 . 2 3 . 0 N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature BVDSS Fairchild Semiconductor
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MOSFET IRFI540 irfW540a IRFW/I540A IRFI540A IRFI540 IRFI540ATU
Abstract: Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , ©1999 Fairchild Semiconductor Corporation IRFR/U110A N-CHANNEL POWER MOSFET Electrical , Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=4.7A,VGS=0V TJ=25 C ,IF=5.6A diF/dt=100A/ u s , Independent of Operating Temperature 5 O N-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS , ) Drain-Source Breakdown Voltage N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS(on Fairchild Semiconductor
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IRFR110A IRFR110 IRFR110ATF IRFR110ATM
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