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Part Manufacturer Description Datasheet BUY
V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
ISL6625ACRZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; DFN8; Temp Range: See Datasheet visit Intersil Buy
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy

MOSFET N-CH 200V

Catalog Datasheet MFG & Type PDF Document Tags

push-pull converter 80V output

Abstract: TL431 2.5V 1 MOSFET, Nch 200V, 90mohm (6) or R4 2 Vishay FMMT493 MMBTA55 Qty. (6 , 2005 M9999-080404 (408) 955-1690 Micrel MIC3809 Evaluation Board MOSFET is off, thereby preventing current from flowing through the other. VDS across the off MOSFET is equal to twice the input , from VDD, which supplies power to the MOSFET gate drive circuit. Figure 3 Current Sense and Slope , illustrate the MOSFET drain-source voltages and drain currents. When one of the primary MOSFETs is on
Micrel Semiconductor
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MIC3808 push-pull converter 80V output TL431 2.5V 220PF-630V CTX04-16236-X2 72V DC to 12V dC converter circuit diagram MIC3808/9

MOSFET N-CH 200V

Abstract: MF72-060D5 N-CHANNEL 100V SOT323 Diodes Inc BSS123W-7-F Q7 MOSFET N-CH 200V POWERPAK 8-SOIC Vishay , pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current. 8 GATE Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. 9 VCC 10 BLDR Input voltage pin. This pin provides the , BZX84C15LT1G D2, D3, D5, D6, D7 DIODE FAST REC 200V 1A Rohm Semiconductor RF071M2STR D4 DIODE
National Semiconductor
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MOSFET N-CH 200V MF72-060D5 mf72 CRCW2512330RJNEG SCHEMATIC dimmer lm3445 LM3445 90VAC 135VAC AN-1978

lm3445

Abstract: RF071M2STR N-CHANNEL 100V SOT323 Diodes Inc BSS123W-7-F Q7 MOSFET N-CH 200V POWERPAK 8-SOIC Vishay , LED current sense pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current. 8 GATE Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. 9 VCC 10 BLDR Input voltage pin. This pin , BZX84C15LT1G D2, D3, D5, D6, D7 DIODE FAST REC 200V 1A Rohm Semiconductor RF071M2STR D4 DIODE
National Semiconductor
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br1 BRIDGE application note LM3445 BRIDGE-RECTIFIER 100v 1a dale fuse dale fuse resistor HD04-T

application note LM3445

Abstract: GRM188R71C474K N-CHANNEL 100V SOT323 MOSFET N-CH 200V POWERPAK 8-SOIC TRANS PNP LP 100MA 30V SOT23 330ohm 2512 5% Resistor , switching MOSFET source, ISNS to GND to set the maximum LED current. Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. Input voltage pin. This pin , , X7R, 16V, 10% Ceramic, 330pF 100V C0G 0603 DIODE ZENER 225MW 15V SOT23 DIODE FAST REC 200V 1A DIODE SWITCH SS DUAL 70V SOT323 DIODE SUPER FAST 200V 1A SMB FUSE 1A 125V FAST Conn, Term Block 2POS INDUCTOR
National Semiconductor
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GRM188R71C474K GCM1885C GRM188R71C474KA HI1206T161 murs120-13-f 120VAC SNVA401F

Light Dimmer 800 watt with Schematic

Abstract: zero crossing dimmer zigbee , Filter Choke, 1mH, ±10%, 6 mm Dia MOSFET, N-ch, 200V, 600mA, 2.2 Ohms, TSOP-6 MOSFET, N-ch, 600V, 0.3A, 11.5 Ohms, TO-92 MOSFET, N-ch, 800V, 2.5A, 4.5 Ohms, DPAK Resistor, Chip, 7.5k, 1/10W, ±1%, 0805 , , 4.7 uF, 200V, -40 to +105°C, ±20%, 8.00 mm Dia Capacitor, Ceramic, 10 uF, 25V, X7R, ±10%, 1206
Texas Instruments
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SLUU523 Light Dimmer 800 watt with Schematic zero crossing dimmer zigbee 2250u busch dimmer 2250u light dimmer working circuit using triac Voltech dimmer TPS92070EVM-648 TPS92070
Abstract: , 5.08mm 2POS Terminal Block 1715721 Phoenix Contact Q1 1 200V MOSFET, N-CH, 200V, 0.6A TSOP-6 IRF5801TRPBF International Rectifier Q2 1 600V MOSFET, N-CH, 600V, 2A , Part Number MFR C1 1 680pF CAP, CERM, 680pF, 200V, +/-10%, X7R 0805 , EPCOS Inc C4 1 22ÂuF CAP, Alum, 22ÂuF, 200V, +/-20% 10x20mm UPW2D220MPD Nichicon , 200V Diode, Switching, 200V, 0.2A SOT-23 BAS21-7-F Diodes Inc. Cool White LED, Cool Texas Instruments
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TPS92410EVM-002 SLVUA46 ISO/TS16949
Abstract: MOSFET, 100V Vishay Intertechnology, Inc. SIS890DN-T1-GE3 1 Q2 MOSFET N-Ch. 200V 15.2A , coupled inductor has a 2:1 ratio. The secondary MOSFET has a 200V maximum VDS rating. The default , maximum). The primary side MOSFET has a maximum VDS rating of 100V. Users should be cautious that this , GND VIN FIGURE 2-2: Applying Power to the Board. CAUTION The Primary side MOSFET is Rated to 100V. The transformer turns ratio is 1:2. Do Not exceed the 100V MOSFET Rating. Primary MOSFET Microchip Technology
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MCP19114 DS50002255A

IRF9210

Abstract: darlington NPN 600V 8a transistor 93 93 96 96 100 100 98 98 102 102 104 104 TR : Transistor, L I : Linear, FET : MOSFET, MPR , : Linear, F E T : MOSFET, MPR : Microprocessor Peripherals, T&R : Tape & Reel * See Supplement 1 POWER MOSFET Standard MOSFET PART NO. 2N7000 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF530 , IRF540 FET, 100V, 1.50R, 3.3A, 43W, N-CH, TO-220 USE IRF610 USE IRF610 USE IRF610 FET, 200V, 0.8R, 5A , FET, 200V, 0.40R, 9.0A, 75W, N-CH, TO-220 USE IRF630 USE IRF630 USE IRF630 FET, 200V, 0.18R, 18.0A
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KSH117-1 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088

SSD20N20-125D

Abstract: MosFET SSD20N20-125D 12A , 200V , RDS(ON) 260m N-Ch Enhancement Mode Power MOSFET Elektronische , SSD20N20-125D Elektronische Bauelemente 12A , 200V , RDS(ON) 260m N-Ch Enhancement Mode Power MOSFET , -252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide , informed individually. Page 1 of 4 SSD20N20-125D 12A , 200V , RDS(ON) 260m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise
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MosFET

ssd10n20-400d

Abstract: ssd10n20 SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen free DESCRIPTION These miniature , Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m Elektronische Bauelemente ELECTRICAL , -400D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m CHARACTERISTIC , Power MOSFET 9.2A, 200V, RDS(ON) 400m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 08
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ssd10n20

IFRZ44

Abstract: IRFZ43 , 60V, 0.5A, TO-92 MPSA42 TR, NPN, HI-VOLT, 300V, 0.5A, TO-92 MPSA43 TR, NPN. HI-VOLT. 200V. 0.5A. TO , IRF612 IRF613 FET, 200V,1.50R, 3.3A, 43W, N-CH, TO-220 USE IRF610 USE IRF610 USE IRF610 IRF624 , , 200V, 0.40R, 9.0A, 75W, N-CH, T0-220 USE IRF630 USE IRF630 USE IRF630 IRF640 IRF641 IRF642 IRF643 FET, 200V,0.18R, 18.0A, 125W, N-CH, T0-220 USE IRF640 USE IRF640 USE IRF640 IRF644 FET, 250V, 0.28R, 14A, 125W, N-CH, T0-220 USE IRF644 IRF645 TR: Transistor, LI: Linear, FET: MOSFET, MPR
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IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct 2N4400 2N4402 2NS088 2NS551 2N6S15 IRFS30

vishay zener diode 1A 30v

Abstract: zener smd diode 3.3v 1w -48V 10uA UVLO GND UVLO 2.00V UVLO UVLO 2.00V UVLO LM5070 UVLO 23V SMPS , 2.0V 3.4A MOSFET 390mA , 25k I-V 0 , RCLASS 15V 600A / GND -48V +3.3V RTN (48V) 3.3V LM5070 MOSFET 3.3V (UUT) / LM5070 80% . (VCC) , www.national.com 2 RTN AN-1346 2 LM5070 3.3V 8 +3.3VRTN 1. UVLO VEE(IC MOSFET 2 , +3.3V VCC 1. (CS) 2. MOS-FET 390mA MOSFET 3. MOSFET (RTN ) VEE 2.5V 4. 1
National Semiconductor
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SM76925 vishay zener diode 1A 30v zener smd diode 3.3v 1w N mosfet 100v 600A zener diode 3.3v 10w zener 15v diode 300mA 1A 60V SCHOTTKY diode toshiba IEEE802 LM5070HE AN201271 W08050000Z CRCW08051001F100 C1023-A
Abstract: SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen free DESCRIPTION These , Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400mΩ Elektronische Bauelemente ELECTRICAL , of 4 SSD10N20-400D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 9.2A, 200V , Bauelemente N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400mΩ CHARACTERISTIC CURVE http SeCoS
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SSG4472N

Abstract: MosFET SSG4472N 5.1A, 200V, RDS(ON) 78mâ"¦ â"¦ N-Ch Enhancement Mode Power MOSFET Elektronische , Any changes of specification will not be informed individually. Page 1 of 4 SSG4472N 5.1A, 200V, RDS(ON) 78mâ"¦ â"¦ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL , not be informed individually. Page 2 of 4 SSG4472N Elektronische Bauelemente 5.1A, 200V, RDS(ON) 78mâ"¦ â"¦ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http
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Quasi-resonant Converter for induction cooker

Abstract: IGBT 60A spice model module) for 1020A appliance motor control . . Page 4 Interface & Logic P-Channel MOSFET BGAs , Power Transistors Discrete Dual N-Channel and Dual P-Channel MOSFET BGAs . . . Page 2 Analog new products Summer - 2002 FREE literature MOSFET BGA Design Guide contains information about , Semiconductor Discrete Power Solutions Newsletter Dual N- and dual P-channel MOSFET BGAs combine small , Fairchild has introduced two new dual Nchannel and two new dual P-channel 20V MOSFET BGA (ball grid array
Fairchild Semiconductor
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Quasi-resonant Converter for induction cooker IGBT 60A spice model 1000V igbt dc to dc buck converter 10 kw schematic induction heating CAR IGNITION WITH IGBTS Quasi-resonant Converter induction cooker applications

P-Channel mosfet 400v

Abstract: IRF7101 PD - 95296 IRF7317PbF HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description l l S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing , 2.70V 2.00V BOTTOM 1.50V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A
International Rectifier
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IRF7101 P-Channel mosfet 400v IRF7317P EIA-481 EIA-541

MMBD2104

Abstract: Transistor NEC 05F 33 300mW zener 33V 1W zener npn/pnp 22k+47k bias res dual ca Si diode 200V 100mA n-ch mosfet 1.3A 20V , BC846A Phi ITT N BC546A FMMT3904 Zet N 2N3904 MMBT3904 Mot N 2N3904 IRLML2402 IR F n-ch mosfet 20V 0.9A , diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 50V 100mA npn sw + 10k base res DC-8GHz MMIC amp 16dB , zener Si diode 200V 100mA 11V 0.3W zener 11V 1W zener npn/pnp 22k+22k bias res npn + res npn + res Si diode 200V 100mA dual ca 12V 0.3W zener dual series RF schottky15V 20mA 12V 0.3W zener 12V 1W zener
SMD Code Book
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MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d T2D DIODE 3w BZV49 BZV55 BAS32 BAS45 BAV105 LL4148

MMBD2103

Abstract: ZENER DIODE t2d /pnp dtr 22k+47k dual ca Si diode 200V 100mA n-ch mosfet 1.3A 20V 3.3V 300mW zener 3.3V 300mW zener , IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , modamp mosfet n-ch npn o/p p-ch pin pkg pnp prot res s ser Si substr sw Vce Vcc junction field effect , mosfet gate) resistor source series silicon substrate switch or switching collector - emitter voltage , -8GHz MMIC amp 12dB gain PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 50V 100mA npn
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MMBD2103 MMBD2101 MMBD2102 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 ZENER DIODE t2d 93 LL4448 BB241 BB249 LL914 LL4150 BB219

SMD Codes

Abstract: TRANSISTOR SMD T1P IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , mosfet gate) resistor source series silicon substrate switch or switching collector - emitter voltage , 4k7+4k7 pnp dtr 4k7+4k7 DC-8GHz MMIC amp 12dB gain PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA , dual ca 11V 0.3W zener Si diode 200V 100mA 11V 0.3W zener 11V 1W zener npn/pnp dtr 22k+22k pnp dtr
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TRANSISTOR SMD T1P BAW92 smd transistor A6a a4s smd transistor schottky diode s6 81A transistor SMD P2F LL300 BA682 BA683 BA423L LL600 LL3595

SSD14N25-280D

Abstract: MosFET SSD14N25-280D 10.9A , 250V , RDS(ON) 280m N-Ch Enhancement Mode Power MOSFET Elektronische , -252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide , , RDS(ON) 280m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL , Voltage RDS(ON) Dynamic ÂuA VDS=200V, VGS=0, TJ=55° C A m Qg - 16 Gate-Source , Time VDS=5V, VGS=10V 2 Total Gate Charge Rise Time VDS=200V, VGS=0 nC VDS
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