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ICL7667MTV-4 Maxim Integrated Products DUAL POWER MOSFET DRIVER (INVERTING) ri Buy
MC33883HEGR2 Freescale Semiconductor IC FULL BRDG BASED MOSFET DRIVER, MOSFET Driver ri Buy
MAX15018AASA+T Maxim Integrated Products IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver ri Buy

MOSFET N-CH 200V

Catalog Datasheet Results Type PDF Document Tags
Abstract: N-CHANNEL 100V SOT323 Diodes Inc BSS123W-7-F BSS123W-7-F Q7 MOSFET N-CH 200V POWERPAK 8-SOIC Vishay , pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current. 8 GATE Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. 9 VCC 10 BLDR Input voltage pin. This pin provides the , BZX84C15LT1G BZX84C15LT1G D2, D3, D5, D6, D7 DIODE FAST REC 200V 1A Rohm Semiconductor RF071M2STR RF071M2STR D4 DIODE ... Original
datasheet

8 pages,
1245.38 Kb

CRCW1206100RFKEA BZX84C15LT1G BSS123w BAV99Wt1g 10UF/250V 1000UH smd trans. D2 SMD resistors 100 ohm 0603 vishay SI7464DP PWM chan LED dimmer murs120-13-f GRM31CR72A105KA01 CRCW2512330RJNEG LM3445 120VAC LM3445 abstract
datasheet frame
Abstract: MOSFET N-CH 200V POWERPAK 8-SOIC Vishay/Siliconix Si7464DP Si7464DP Q8 TRANS PNP LP 100MA 100MA 30V SOT23 , ISNS LED current sense pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current. 8 GATE Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. 9 VCC 10 BLDR Input voltage , 15V SOT23 ON Semiconductor BZX84C15LT1G BZX84C15LT1G D2, D3, D5, D6, D7 DIODE FAST REC 200V 1A Rohm ... Original
datasheet

8 pages,
1201.63 Kb

smd trans. D2 3W led driver application note LM3445 BRIDGE-RECTIFIER 100v 1a dale fuse dale fuse resistor HD04-T HI1206T161R-10 MSS1260 National Electronics SCHEMATIC dimmer control 1000UH br1 BRIDGE LM3445 120VAC LM3445 abstract
datasheet frame
Abstract: CRCW08051782FRT1 CRCW08051782FRT1 Vishay dale R10, R15 1 MOSFET, Nch 200V, 90mohm (6) or R4 2 Vishay , MIC3809 MIC3809 Evaluation Board MOSFET is off, thereby preventing current from flowing through the other. VDS across the off MOSFET is equal to twice the input voltage. The voltage across the secondary winding is , sensitive sections of the controller from VDD, which supplies power to the MOSFET gate drive circuit. , with each other. Figures 2 and 3 illustrate the MOSFET drain-source voltages and drain currents. When ... Original
datasheet

10 pages,
608.18 Kb

CRCW25121002F ES1D DIODE GRM21BR71E105KA99L MIC3809BM nec tl431 TDK TRANSFORMER VJ0805Y104KXAAT TL431 VJ0805Y332KXAAT M9999-080404 MIC3808 MIC3809 Murata GRM32ER72A105KA01L MOSFET N-CH 200V MIC3809 abstract
datasheet frame
Abstract: N-CHANNEL 100V SOT323 MOSFET N-CH 200V POWERPAK 8-SOIC TRANS PNP LP 100MA 100MA 30V SOT23 330ohm 2512 5% Resistor , input. Circuit ground connection. LED current sense pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current. Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. Input voltage pin. This pin provides , , 16V, 10% Ceramic, 330pF 100V C0G 0603 DIODE ZENER 225MW 225MW 15V SOT23 DIODE FAST REC 200V 1A DIODE SWITCH ... Original
datasheet

10 pages,
1282.48 Kb

murs120-13-f MOSFET N-CH 200V LM3445 GRM188R71C474KA GRM188R71C474K GCM1885C application note LM3445 120VAC SNVA401F LM3445 abstract
datasheet frame
Abstract: mm Dia MOSFET, N-ch, 200V, 600mA, 2.2 Ohms, TSOP-6 MOSFET, N-ch, 600V, 0.3A, 11.5 Ohms, TO-92 MOSFET, N-ch, 800V, 2.5A, 4.5 Ohms, DPAK Resistor, Chip, 7.5k, 1/10W 1/10W, ±1%, 0805 Resistor, Thick Film, 1.00M, 1 , , 305VAC 305VAC, X2, ±20%, 0.157 x 0.512 inch Capacitor, Aluminum Electrolytic, 4.7 µF, 200V, -40 to +105°C, ±20% ... Original
datasheet

21 pages,
2891.24 Kb

2250u busch low voltage ac led dimmer schematic MOSFET N-CH 200V SCHEMATIC dimmer control SCHEMATIC leading edge dimmer varistor 681k TRIAC dimmer control triac 600v 25a touch dimmer SLUU523 6813B 3 volt dimmer circuit SLUU523 abstract
datasheet frame
Abstract: n-ch p-ch 11 22 ns ns N-CHANNEL VDD =200V, ID=1.5A, VGS = 10V P-CHANNEL VDD = 200V, ID= , P-CHANNEL VDD = 200V, ID = 1.5A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. n-ch p-ch , ID = 250 µA, VGS = 0 P-CHANNEL ID = 250 µA, VGS = 0 n-ch 250 V p-ch 250 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C n-ch p-ch n-ch p-ch 1 1 10 10 µA µA µA µA IGSS Gate-body Leakage Current (VDS = 0 ... Original
datasheet

10 pages,
447.74 Kb

STS1C1S250 P-Channel MOSFET 120v MOSFET N-CH 200V dual zener diode 10v STS1C1S250 abstract
datasheet frame
Abstract: ) OFF Symbol V(BR)DSS Parameter Test Conditions Min. Max. n-ch 250 V p-ch , °C n-ch p-ch n-ch p-ch IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V n-ch , Max. Unit 2 3 4 V 2 3 4 V n-ch 0.9 1.4 p-ch 2.1 2.8 , Test Signal Level=20mV Open Drain n-ch p-ch 325 260 pF pF n-ch p-ch 51 52 pF pF n-ch p-ch N-CHANNEL VDS = 25V, f = 1 MHz, VGS = 0 P-CHANNEL VDS = 25V, f = 1 MHz, VGS = ... Original
datasheet

10 pages,
458.1 Kb

STS1C1S250 sd 150 zener diode MOSFET P-CH 250V 5A MOSFET N-CH 200V STS1C1S250 abstract
datasheet frame
Abstract: VDD =200V, ID=1.5A, VGS = 10V P-CHANNEL VDD = 200V, ID= 1.5A, VGS = 10V n-ch p-ch n-ch p-ch , Max. Unit N-CHANNEL ID = 250 µA, VGS = 0 P-CHANNEL ID = 250 µA, VGS = 0 n-ch 250 V , Rating, TC = 125 °C n-ch p-ch n-ch p-ch 1 1 10 10 µA µA µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V n-ch p-ch ±10 ±10 µA µA ON (1) Symbol VGS(th , n-ch 2 3 4 V p-ch 2 3 4 V N-CHANNEL VGS = 10V, ID = 0.40A P-CHANNEL ... Original
datasheet

10 pages,
449.29 Kb

Zener Diode B1 9 STS1C1S250 STS1C1S250 abstract
datasheet frame
Abstract: HEXFET® Power MOSFET N-Ch Voss P-Ch -20V 2 3 IS & s) 7 20V 4 S P-CHANNEL , V(BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. Units "TFChl 20 - V _ P-Ch -20 N-Ch 0.027L j- V/°C P-Ch 0.031 i~L_ - 0.0230.029 N-Ch - * 0.0300.046 £ 2 0.0490.058 P-Ch - 0.082 0.098 *~N-Ch 0.7 - - V - P-Ch -0.7 - r N-Ch 20 r - o P-Ch - 5.9 - r - - N-Ch 1.0 - -1.0 P-Chl - pA _ _ N-Ch 5.0 - -25 P-Ch - ±100 nA N-P - 27 N-Ch _rr_ >-Ch 29 N-Ch L "~ 2.2 3.3 nC 4.0 6.1 P-Ch ... OCR Scan
datasheet

8 pages,
423.82 Kb

MOSFET N-CH 200V international rectifier 137 UG 77A DIODE mosfet p-channel 300v datasheet abstract
datasheet frame
Abstract: SSD10N20-400D SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m Elektronische , Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m CHARACTERISTIC , changes of specification will not be informed individually. Page 1 of 4 SSD10N20-400D SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m Elektronische Bauelemente ELECTRICAL , informed individually. Page 3 of 4 SSD10N20-400D SSD10N20-400D Elektronische Bauelemente N-Ch Enhancement Mode ... Original
datasheet

4 pages,
381.89 Kb

ssd10n20-400d ssd10n20 SSD10N20-400D SSD10N20-400D abstract
datasheet frame

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N-Ch Mosfet PSO-10 PSO-10 PSO-10 PSO-10 STPSxxxx / STPSxxLxx Power Schottky - 15-100V, 1-240A (L: Vf=0.31V ] Fast Mosfet Max220 / TO247 / TO220/ ISOWATT218 ISOWATT218 ISOWATT218 ISOWATT218 STTH806TTI STTH806TTI STTH806TTI STTH806TTI 8A, 600V Hyperfast Diode control STY/U/W/P/H xx NA80/100 NA80/100 NA80/100 NA80/100 [FI] Fast Mosfet Max247 /Max220 /TO247 /TO247 /TO247 /TO247 / TO220/ ISOWATT218 ISOWATT218 ISOWATT218 ISOWATT218 STY/U/W/P/H xx NB50/60/80/100 NB50/60/80/100 NB50/60/80/100 NB50/60/80/100 [FI] New Mosfet Technology: less Si-Area, Low Ultra-fast Power Rectifier 200V/ 300V L4970A/2A/4A/5A/7A L4970A/2A/4A/5A/7A L4970A/2A/4A/5A/7A L4970A/2A/4A/5A/7A Cont. Mode Step Down 2-10A upto
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