NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| DS2405-037-01 | Maxim Integrated Products | Addressable Switch | 
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| DS2405AP-02C-166/T&R-VARTA | Maxim Integrated Products | Addressable Switch |
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| DS2405AP-02C-166/VARTA | Maxim Integrated Products | Addressable Switch |
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| DS2405AP-02C-114/T&R-SANYO | Maxim Integrated Products | Addressable Switch |
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| DS2405AR-100-550/T | Maxim Integrated Products | Addressable Switch |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: W), regulation is maintained by skipping MOSFET switching cycles. When the current demanded by the load exceeds the peak power point, MOSFET switching cycles are no longer skipped and the internal , enables MOSFET switching for approximately 100 ms. The LNK564DN LNK564DN will remain in auto-restart mode until the FB pin voltage rises above 0.8 V during the 100 ms of enabled MOSFET switching. Operation The , 0.89 inches) · High switching frequency (100 kHz) enables use of small, lightweight transformer ... | Original |
2 pages, |
topswitch flyback EE-13 EE13 flyback transformer construction flyback transformer design for mosFET tinyswitch 175 1N4005 flyback snubber circuit design flyback snubber tinyswitch EE-13 snubber circuit for mosfet lnk564dn DI-132 DI-132 abstract |
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| Abstract: Gate-drain (Miller) charge Qgd VDD=0.5BVDSS, ID=7.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.5BVDSS(MOSFET Switching time are , Gate-drain (Miller) charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=9.0A (MOSFET switching , Gate-drain (Miller) charge Qgd VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.5BVDSS(MOSFET Switching time are ... | Original |
20 pages, |
TO-3P-5L KA5S0765C KA5S09654QT KA5S1265 KA5S1265-TU KA5S12656 150 WATT smps KA5S-SERIES KA5S0965 5S0965 5s0765 application note 5s0765c 5s12656 KA5S0765C application KA5S1265 abstract |
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| Abstract: Gate-drain (Miller) charge Qgd VDD=0.5BVDSS, ID=7.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.5BVDSS(MOSFET Switching time are , Gate-drain (Miller) charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=9.0A (MOSFET switching , Gate-drain (Miller) charge Qgd VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.5BVDSS(MOSFET Switching time are ... | Original |
20 pages, |
MOSFET "MARKING CODE 7V" KA5S0765C KA5S09654QT KA5S1265 KA5S12656 5s0765 KA5S0965 5S0965 5S12656 application note 5s0765c 5S1265 5s0765c KA5S0765C/KA5S09654QT/KA5S0965/ KA5S0765C/KA5S09654QT/KA5S0965/ KA5S12656/KA5S1265 KA5S0765C/KA5S09654QT/KA5S0965/ abstract |
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| Abstract: 55 150 PF tdfon) Turn-On Delay Time 9 140 ns VDD=75V,Id=5A Rg = 75Q,RL=15Q (MOSFET switching times aie essentially independent of operating temperature.) 15 30 ns VDD=30V,ID=8A Rg=75Q,RL«=4JQ (MOSFET switching times are essentially independent of operating temperature.) 9 30 ns Vdq â- > 75V, lD=5A R9 = 75£2,Rl=15£1 (MOSFET switching times are essentially independent of operating temperature.) t, Rise Time 18 , switching limes are 30 40 ns (MOSFET switching times are 45 50 ns (MOSFET switching times are In 1. ... | OCR Scan |
4 pages, |
OM9340SC OM9339SC OM9337SC OM9336SC OM9335SC OM9334SC OM9333SC OM9332SC OM9332SC abstract |
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| Abstract: (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - 310 , 1MHz Qgd VDD=0.5B VDSS, ID=9.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating , , ID=12.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=12.0A ... | Original |
16 pages, |
KA5S12656 5s0765 KA5S0765C KA5S0765CTU KA5S0965 KA5S1265 application note 5s0765c 5S0965 5S12656 5S1265 5S0765C KA5S0765C/KA5S0965/KA5S12656/KA5S1265 KA5S0765C/KA5S0965/KA5S12656/KA5S1265 abstract |
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| Abstract: Gate-Drain (Miller) Charge Qgd VDD=0.5B VDSS, ID=7.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.5B VDSS(MOSFET switching time is essentially , (Miller) Charge 4 VGS=0V, VDS=25V, f = 1MHz Qgd VDD=0.5B VDSS, ID=9.0A (MOSFET switching , Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VDD=0.5B VDSS, ID=12.0A (MOSFET switching , (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=12.0A ... | Original |
16 pages, |
500 WATT smps 5S12656 application note 5s0765c KA5S0765C KA5S0765C-TU KA5S0965 KA5S1265 KA5S12656 5S0965 5S0765C MOSFET SWITCHING 5S1265 KA5S0765C/KA5S0965/KA5S12656/KA5S1265 KA5S0765C/KA5S0965/KA5S12656/KA5S1265 abstract |
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| Abstract: fuse. The MOSFET within U1, diode D3, inductor L2 and capacitor C3 form the buck converter stage. The controller within U1 regulates the output current by enabling and disabling MOSFET switching cycles. , into the FB pin exceeds 49 mA, MOSFET switching is disabled. The controller adjusts the ratio of , a reference. The output voltage is regulated to , · To prevent EMI coupling between the switching nodes on the main board and the input filter board ... | Original |
2 pages, |
TOPSWITCH buck DI-131 GU10 LinkSwitch-TN lnk30 BAV21WS-7-F MMST3904 MMST3906 MURS160T3 mb6s mb6s diode GU10 halogen lamp lnk306dn lnk306 DI-131 abstract |
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| Abstract: current by enabling and disabling MOSFET switching cycles. During normal operation, the output current , (FB) pin of U1 from C5, via R3. Whenever the current into the FB pin exceeds 49 A, MOSFET switching , MOSFET switching cycles as the current into the FB pin exceeds 49 A. Diode bridge BR1 rectifies the , indefinitely · Thermal shutdown: protects entire lamp assembly The MOSFET within U1, diode D3, inductor L2 , switching nodes on the main board and the input filter board, a shield board (connected to C2 negative ... | Original |
2 pages, |
LinkSwitch-TN MURS160T3 MMST3906 MMST3904 GU10 DI-131 BAV21WS-7-F mb6s diode lnk306dn DI-131 abstract |
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| Abstract: ) for more information. APPLICATION AREAS · · · Power MOSFET Switching Switch-Mode Power , MOSFET Switching Ordering Information PART Switch-Mode Power Supplies LOGIC INPUT , April 27, 2002 MAXIM'S NEW PRODUCT RELEASE ANNOUNCEMENT MAX5048 MAX5048 7.6A, 12ns, SOT23 MOSFET Driver , DESCRIPTION The MAX5048A/MAX5048B MAX5048A/MAX5048B are high-speed MOSFET drivers capable of sinking/sourcing 7.6A/1.3A peak currents. These devices take logic input signals and drive a large external MOSFET. The MAX5048A/ MAX5048A/ MAX5048B MAX5048B ... | Original |
2 pages, |
power mosfet switching MAX5048BAUT-T MAX5048AAUT-T MAX5048 MAX5048A/MAX5048B MAX5048A/ MAX5048B MAX5048A MAX5048 abstract |
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| Abstract: MOSFET. Switching pin. Drain of internal power MOSFET. Switching pin. Drain of internal power MOSFET. Pin , constant current LED driver with current-mode switching DC-DC controller. The output current range can be , supports the boost, coupled-inductor boost-buck or SEPIC topologies and operates in an adjustable switching , protection, thermal shutdown protection and internal power MOSFET over-current protection. Two fault , MOSFET Current Limitation and Soft-Start LED Open / Short Protection Output Over-Voltage Protection ... | Original |
4 pages, |
resistor 100k pin configuration PT16972 mosfet overcurrent 200Hz PWM 200khz power mosfet power mosfet switching PT16972 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| App Note Abstract: NEW DRIVER ICS OPTIMIZE HIGH-SPEED POWER MOSFET SWITCHING CHARACTERISTICS MOSFET SWITCHING CHARACTERISTICS The UC3705 UC3705 UC3705 UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices, particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps it is touted as a high-impedance, voltage-controlled device, prospective users of Power MOSFETs soon www.datasheetarchive.com/files/texas-instruments/data/www.ti.com/sc/docs/psheets/abstract/apps/slua054.htm |
Texas Instruments | 19/01/2000 | 7.82 Kb | HTM | slua054.htm |
| App Note Abstract: NEW DRIVER ICS OPTIMIZE HIGH-SPEED POWER MOSFET SWITCHING CHARACTERISTICS MOSFET SWITCHING CHARACTERISTICS The UC3705 UC3705 UC3705 UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices, particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps it is touted as a high-impedance, voltage-controlled device, prospective users of Power MOSFETs soon www.datasheetarchive.com/files/texas-instruments/data/wwwti~1.com/sc/docs/psheets/abstract/apps/slua054.htm |
Texas Instruments | 18/01/2000 | 7.82 Kb | HTM | slua054.htm |
| thermal and packaging standpoint. Although brief, each of the MOSFET switching transitions can be App Note Abstract: PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT AND MCT GATE PERFORMANCE MOSFET, IGBT AND MCT GATE DRIVE CIR The switch-mode power supply industry's trend towards higher these frequencies are pushed towards and beyond one MHz, the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and www.datasheetarchive.com/files/texas-instruments/data/www.ti.com/sc/docs/psheets/abstract/apps/slua105.htm |
Texas Instruments | 19/01/2000 | 7.8 Kb | HTM | slua105.htm |
| thermal and packaging standpoint. Although brief, each of the MOSFET switching transitions can be App Note Abstract: PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT AND MCT GATE PERFORMANCE MOSFET, IGBT AND MCT GATE DRIVE CIR The switch-mode power supply industry's trend towards higher these frequencies are pushed towards and beyond one MHz, the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and www.datasheetarchive.com/files/texas-instruments/data/wwwti~1.com/sc/docs/psheets/abstract/apps/slua105.htm |
Texas Instruments | 18/01/2000 | 7.8 Kb | HTM | slua105.htm |
| OPTIMIZE HIGH-SPEED POWER MOSFET SWITCHING CHARACTERISTICS (SLUA054 SLUA054 SLUA054 SLUA054) POWER DISSIPATION CONSIDERATIONS FOR Analog & Mixed-Signal : Power Management : MOSFET and Power Drivers -Signal : Power Management : MOSFET and Power Drivers > Application Notes > Block Diagrams Application Notes (SLUA083 SLUA083 SLUA083 SLUA083) ELECTROSTATIC DISCHARGE APPLICATION NOTE (SSYA008 SSYA008 SSYA008 SSYA008) IGBT DRIVE USING MOSFET GATE DRIVERS SUPPLIES (SLUA110 SLUA110 SLUA110 SLUA110) PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT AND MCT GATE DRIVE CIR www.datasheetarchive.com/files/texas-instruments/data/www.ti.com/sc/docs/apps/analog/mosfet_and_power_drivers.html |
Texas Instruments | 24/01/2000 | 8.99 Kb | HTML | mosfet_and_power_drivers.html |
| OPTIMIZE HIGH-SPEED POWER MOSFET SWITCHING CHARACTERISTICS (SLUA054 SLUA054 SLUA054 SLUA054) POWER DISSIPATION CONSIDERATIONS FOR Analog & Mixed-Signal : Power Management : MOSFET and Power Drivers -Signal : Power Management : MOSFET and Power Drivers > Application Notes > Block Diagrams Application Notes (SLUA083 SLUA083 SLUA083 SLUA083) ELECTROSTATIC DISCHARGE APPLICATION NOTE (SSYA008 SSYA008 SSYA008 SSYA008) IGBT DRIVE USING MOSFET GATE DRIVERS SUPPLIES (SLUA110 SLUA110 SLUA110 SLUA110) PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT AND MCT GATE DRIVE CIR www.datasheetarchive.com/files/texas-instruments/data/wwwti~1.com/sc/docs/apps/analog/mosfet~1.htm |
Texas Instruments | 24/01/2000 | 8.99 Kb | HTM | mosfet~1.htm |
| AN7260 AN7260 AN7260 AN7260 Harris Corporation's Home Page ¤ Semiconductor's Home Page ¤ Product Information ¤ AN7260 AN7260 AN7260 AN7260 AN7260 AN7260 AN7260 AN7260 Appnotes an7260.pdf Power MOSFET Switching Waveforms: a New Insight (All MOSFETs) ( Adobe's pdf format - 94979 bytes) Here's where you can find out how to get your free copy of Adobe's acrobat reader . All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 ISO9000 ISO9000 ISO9000 quality systems certification. Harris www.datasheetarchive.com/files/harris/data/an/an7/an7260/index.htm |
Harris | 15/08/1997 | 2.36 Kb | HTM | index.htm |
| Optimize High Speed Power MOSFET Switching Characterisitics U-137 U-137 U-137 U-137 Optimize High Speed Power MOSFET Switching Characterisitics UC3707 UC3707 UC3707 UC3707 U-118 U-118 U-118 U-118 New Driver ICs Optimize High Speed Power MOSFET Switching Optimize High Speed Power MOSFET Switching Characterisitics UC3717 UC3717 UC3717 UC3717 Switching Power Supply Topology: Voltage Mode vs. Current Mode DN-64 DN-64 DN-64 DN-64 www.datasheetarchive.com/files/unitrode/catalog/apps/apps_prt.htm |
Unitrode | 30/06/1998 | 58.61 Kb | HTM | apps_prt.htm |
| INTERNATIONAL RECTIFIER LAUNCHES LINE OF LOW CHARGE HEXFET ® POWER MOSFETs Low charge process improves switching performance and reduces gate driver requirements of HEXFET ® power MOSFETs conversion applications, now offers a line of low charge HEXFET power MOSFETs that improve the switching and gate charge goes down by 40 percent. This cuts MOSFET switching losses in half. As an supplies and ballasts, even for larger MOSFETs . The reduced switching losses provide higher efficiency www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd00138.htm |
International Rectifier | 06/10/1998 | 5.43 Kb | HTM | wcd00138.htm |
| trademark of International Rectifier) 1. HOW THE IGBT COMPLEMENTS THE POWER MOSFET Switching speed, peak current capability, ease of drive, wide SOA, avalanche and dv/dt capability have made power MOSFETs the logical choice in new power electronic designs. These advantages, a natural increasing switching losses. IGBTs on the other hand, being minority carrier devices, have superior conduction characteristics, while sharing many of the appealing features of power MOSFETs such as ease of www.datasheetarchive.com/files/international-rectifier/docs/wcd0000c/wcd00cff.htm |
International Rectifier | 06/10/1998 | 4.83 Kb | HTM | wcd00cff.htm |