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Part Manufacturer Description Datasheet BUY
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

MOSFET S1A

Catalog Datasheet MFG & Type PDF Document Tags

RFD14N05 spice

Abstract: HUF76343 Power MOSFET SPICE and Thermal Models Power MOSFET Products Features · · · · Sub Circuit , MOSFET Electrical Models Available on the web @ www.intersil.com HRF3205 HRF3205S HRFZ44N HUF75229P3 , RFT2P03L RFT3055LE © Intersil Corporation 2000 Power MOSFET SPICE and Thermal Models Features · , Resistance (ZJC) Representation Power MOSFET Thermal Models Available on the web @ www.intersil.com , Power MOSFET SPICE and Thermal Models SPICE Models LDRAIN DPLCAP DRAIN 2 5 10 RLDRAIN
Intersil
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HUF75329S3S HUF75623P3 HUF76121P3 RFD14N05 spice HUF76343 HRF3205 equivalent MOSFET S1A DIODE S2B HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S

IRF540N

Abstract: huf76639p3 Power MOSFET SPICE and Thermal Models TM Features · · · · · · · Sub Circuit Approach , Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation POWER MOSFET , RLD03N06CLE RLP03N06CLE RLP1N08LE © Intersil Corporation 2000 Power MOSFET SPICE and Thermal Models , Thermal Resistance (ZJC) Representation POWER MOSFET THERMAL MODELS Available on the web @ , RFD20N03SM RFP10P03L RFT2P03L © Intersil Corporation 2000 Power MOSFET SPICE and Thermal Models
Intersil
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IRF540N huf76639p3 MOSFET IRF540n ITF87056DQT huf75339 RF1K49093 HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S

Spice 2 computer models for hexfets

Abstract: pspice high frequency mosfet A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 , power MOSFET electrical and for the first time, thermal responses. Excellent agreement is demonstrated between measured and modeled responses including first and third quadrant MOSFET and gate charge , . It is developed to provide black box conformity to the power MOSFET throughout the operating regime , been published to model the power MOSFET [2-10] with varying degrees of success. The more successful
Intersil
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Spice 2 computer models for hexfets pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs ISO9000

Sharp amplifier SM30

Abstract: Spice Model for TMOS Power MOSFETs A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October , vertical DMOS power MOSFET electrical and for the first time, thermal responses. Excellent agreement is demonstrated between measured and modeled responses including first and third quadrant MOSFET and gate charge , . It is developed to provide black box conformity to the power MOSFET throughout the operating regime , been published to model the power MOSFET [2-10] with varying degrees of success. The more successful
Intersil
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NMOS depletion pspice model RFH75N05 TRANSFORMER ERL 35 VDMOS DEVICE AN9210 RFH75N ED-17

n mosfet depletion pspice model parameters

Abstract: Sharp amplifier SM30 SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris , power MOSFET electrical and for the first time, thermal responses. Excellent agreement is demonstrated between measured and modeled responses including first and third quadrant MOSFET and gate charge , thermal sub-circuit model capable of providing accurate simulation throughout all of the power MOSFET , included in the supplied libraries. Efforts have been published to model the power MOSFET [2-10] with
Harris Semiconductor
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Sharp SM30 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets sub-circuit supply switch power 100khz filter 88CH2504-9 AN-1043

Spice 2 computer models for hexfets

Abstract: Spice Model for TMOS Power MOSFETs A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 , presented. It accurately portrays the vertical DMOS power MOSFET electrical and for the first time, thermal , third quadrant MOSFET and gate charge behavior, body diode effects, breakdown voltage at high and low , MOSFET throughout the operating regime normally traversed by the dictates of most power circuit , supplied libraries. Efforts have been published to model the power MOSFET [2-10] with varying degrees of
Fairchild Semiconductor
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Malouyans vertical JFET AN75 AN-7510 circuit divided in sub-circuit switch between power supply

pspice high frequency mosfet

Abstract: Spice Model for TMOS Power MOSFETs A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 , presented. It accurately portrays the vertical DMOS power MOSFET electrical and for the first time, thermal , third quadrant MOSFET and gate charge behavior, body diode effects, breakdown voltage at high and low , MOSFET throughout the operating regime normally traversed by the dictates of most power circuit , supplied libraries. Efforts have been published to model the power MOSFET [2-10] with varying degrees of
Fairchild Semiconductor
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ERL 35 transformer FULL WAVE mosfet RECTIFIER CIRCUITS TMOS spice model Rectifier application note switch cross reference

KP-69

Abstract: FDD24AN06LA0 FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET 60V, 36A, 24m Features , DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings TC = 25 , PowerTrench ® MOSFET January 2009 Device Marking Device FDD24AN06LA0_F085 FDD24AN06LA0_F085 , Level PowerTrench® MOSFET Package Marking and Ordering Information 1.2 50 ID, DRAIN CURRENT , . A 3 www.fairchildsemi.com FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET
Fairchild Semiconductor
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KP-69 mosfet 30V 18A TO 252

pspice high frequency mosfet

Abstract: pspice self-heating model list transistor , semiconductor devices, simulation, thermal design. Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical , procedure using parametric data is described. Simulation response of the new self-heating MOSFET model
Fairchild Semiconductor
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pspice self-heating model list transistor pspice model list transistor Power MOSFET, Fairchild Discrete PSPICE: Diode Models dell latitude ORCAD PSPICE BOOK

mosfet SPICE MODEL

Abstract: self-heating subckt Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature , empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET , evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2,3] is highly accurate and is recognized in the industry. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is
Fairchild Semiconductor
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mosfet SPICE MODEL self-heating subckt ronan A SPICE II subcircuit representation for power MOSFETs using empirical methods parallel mosfet difference between orcad pspice

Dell Latitude csx

Abstract: pspice model list transistor self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The , self-heating MOSFET model track the dynamic thermal response and is independent of SPICE's global temperature definition. 1. Introduction Many power MOSFET models available today are based on an ideal lateral MOSFET
Fairchild Semiconductor
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Dell Latitude csx PCIM 177 NMOS MODEL PARAMETERS SPICE eLED RG-136 FDP038AN06A0

D1SF4

Abstract: alco switch demonstration board is capable of handling up to 10 A of continuous output current. An additional MOSFET, input , Switch Setting S1D (R16) S1C (R15) S1B (R14) S1A (R13) VOUT 1 1 1 1 2.0 1 , U4 U3 U2 S1D S1C S1B S1A D1 C6 C5 C4 C2 C1 S1 P6 1B J1 1A , U1 SO-16 PWM IC Si9140CY Vishay Siliconix 29 2 U2, U3 SO-8 P-Ch MOSFET Si4435DY Vishay Siliconix 30 2 U4, U5 SO-8 N-Ch MOSFET Si4410DY Vishay Siliconix
Vishay Siliconix
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TNPW12064992BT-9 TNPW12062492BT-9 GDH045 D1SF4 alco switch dc to ac converter schematic schematic diagram dc to ac converter OS-CON 10SA220K 9140DB SI9140DB CRCW0805499JRT CRCW0805101JRT CRCW0805244JRT CRCW08051102FRT

ALCO Switch

Abstract: OS-CON 10SA220K capable of handling up to 10 A of continuous output current. An additional MOSFET, input capacitor, and , Setting for Various Output Voltages S1 Switch Setting S1D (R16) S1C (R15) S1B (R14) S1A (R13 , 0 0 0 0 3.5 L1 U5 U4 U3 U2 S1D S1C S1B S1A D1 C6 C5 C4 , P-Ch MOSFET SO8 Siliconix (800) 554-5565 U4, U5 Si4410DY N-Ch MOSFET SO8 J1
Temic Semiconductors
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10SA220K Si9140 4410DY 4435DY 9140CY 3SA330K CTX07-12877-X1

A3985

Abstract: A3985SLDTR-T will sink current from the external MOSFET gate circuit to the respective Sxx pin. S1A, S1B, S2A, and , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Features and Benefits Description , Typical Application 3985-DS Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 , current in the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , www.allegromicro.com 2 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Functional Block
Allegro MicroSystems
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IPC7351 A3985SLDTR-T s1a DIODE schottky A3985SLD-T Mosfet analog switch low voltage low resistance MO-153 TSSOP50P640X120-38M

SOP50

Abstract: A3985 turned on and will sink current from the external MOSFET gate circuit to the respective Sxx pin. S1A , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Features and Benefits Description , Typical Application 3985-DS, Rev. 3 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 , current in the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , ; www.allegromicro.com 2 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Functional Block
Allegro MicroSystems
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SOP50 pwm solenoid high-side driver GH-1B Complementary MOSFET Half Bridge

A3985

Abstract: full bridge control mosfet and driver circuit turned on and will sink current from the external MOSFET gate circuit to the respective Sxx pin. S1A , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Features and Benefits Description , Typical Application 3985-DS, Rev. 4 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 , current in the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , ; www.allegromicro.com 2 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Functional Block
Allegro MicroSystems
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full bridge control mosfet and driver circuit
Abstract: turned on and will sink current from the external MOSFET gate circuit to the respective Sxx pin. S1A , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Description Features and Benefits , 3985-DS, Rev. 4 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Description , the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , . 1.508.853.5000; www.allegromicro.com 2 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Allegro MicroSystems
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application note gate driver for h bridge mosfet

Abstract: A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Features and Benefits Serial , Digitally Programmable Dual Full-Bridge MOSFET Driver are protected from shoot-through by integrated , current in the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Functional Block Diagram +5 V VDD , High-Side Drive GH1B CBOOT1B C1B STR Serial Port GL1B S1B RSENSE1 P P C1A GH1A S1A RGH1A RGH1B
Allegro MicroSystems
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application note gate driver for h bridge mosfet
Abstract: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Features ! 6A, 20V General Description rDS(ON) = 0.028â"¦, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild , ® MOSFET December 2004 Symbol VDSS Drain to Source Voltage Ratings 20 Units V VGS , Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Absolute , FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified Fairchild Semiconductor
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FDS8878

Abstract: FDS8978 FDS8978 N-Channel PowerTrench® MOSFET tm 30V, 7.5A, 18m Features General Description rDS(on) = 18m, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to , Q2 G2 3 7 D1 G2 6 D1 D1 4 5 D2 D1 S1 MOSFET Maximum Ratings , FDS8978 Dual N-Channel PowerTrench® MOSFET May 2007 Symbol Parameter Test Conditions Min , www.fairchildsemi.com FDS8978 Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless
Fairchild Semiconductor
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FDS8878
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