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Part Manufacturer Description Datasheet BUY
V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
ISL6625ACRZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; DFN8; Temp Range: See Datasheet visit Intersil Buy
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy

MOSFET MARKING ZA

Catalog Datasheet MFG & Type PDF Document Tags

2N7000BU

Abstract: 2N7000BU/2N7000TA 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Description â'¢ â'¢ â'¢ â'¢ â , , low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching , Ordering Information Part Number Marking Package Packing Method 2N7000BU 2N7000 TO-92 3L , / 2N7000TA Rev. 1.1.0 www.fairchildsemi.com 1 2N7000BU / 2N7000TA â'" Advanced Small-Signal MOSFET , www.fairchildsemi.com 2 2N7000BU / 2N7000TA â'" Advanced Small-Signal MOSFET Thermal Characteristics(2
Fairchild Semiconductor
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2N7000BU/2N7000TA

FS12KM

Abstract: FS12KM-5 MITSUBISHI Neh POWER MOSFET F M S12K -5 HIGH-SPEED SWITCHING USE FS12KM-5 OUTLINE ,   . 2-46 # 1 MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED , LU C C cc Œ o z < cc Û 40 ii i i i 30 i i i i 20 10 V gs uv 1n , 154 A DRAIN-SOURCE VOLTAGE V ds (V) MITSUBISHI ELECTRIC 47 MITSUBISHI Neh POWER MOSFET , ELECTRIC 5 7 102 MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED SWITCHING USE SOURCE-DRAIN
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FS12KM MAX240

B1470

Abstract: K775 MOSFET LEAD FORMING OUTLINE AND TAPING TAPING (1 ) TO-220S (a) Marking -ID î L Orientation "1" , MITSUBISHI POWER MOSFET LEAD FORMING OUTLINE AND TAPING (2) MP-3 (a) Marking â lO î L Orientation "1" , MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE â'¢ VDSS , MITSUBISHI ^m. ELECTRIC MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE ELECTRICAL , VOLTAGE VDS (V) bSMTÃE^ â¡ Ol'ìbflE on A MITSUBISHI ELECTRIC 75 MITSUBISHI Neh POWER MOSFET
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B1470 K775 mitsubishi MOSFET FS20KM5 F3005 MITSUBISHI MOSFET FS T0-220S MAX60S

Transistor 4515

Abstract: CF300 ±180- »12 'ž. so a l0- 2. 20 mA I- 100.1300 MHz W- «8« »21 -90° OdB -3 -« -s -IS -a , \\ / \ / * s22 l0. 2.20 itiA f0s.5V VG2S-ÃV 'ž- SO Q I- 100. 1300 MHz W-Wc 10 20 mA 224 3659 B , transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tape Additional marking" 0": taping without paper film Additional marking" Z": Zigzag folded tape in special box. Marking for orientation of
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Transistor 4515 CF300 transistor D 4515 lm 4580 sot-23 MARKING CODE ZA Telefunken u 237 50B4DIN41867 569-GS

HN7G01

Abstract: MOSFET MARKING ZA Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent Q1 (Transistor) MAXIMUM RATINGS (Ta = 25°C) Q2 (MOS-FET , â'" MARKING Type Name CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation PC (*) 200 mW , : 300-600, B : 500-1000 Q2 (MOS-FET) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , / 0.0 -0.4 -0.8 -1.2 BASE-EMITTER VOLTAGE VÃE (V) -1.6 3 2001-05-31 TOSHIBA HN7G01FU O MOS-FET , 3000 Kl C3 1000 < H J 5(1(1 >> 300 ¢ o W £ as 100 t> w o " 50 ¡3 < 30 « p
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2SA1955 HN7G01 MOSFET MARKING ZA marking za mosfet Scans-005646 N7G01FU

IRF7102

Abstract: 0-30Q International S Rectifier PD 9.872A IRF7102 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Si CE 01 CE s2qi Q2 CC Udì xi di HD2 ¶ D2 Top View Description Fourth Generation , Characteristics Parameter Min. Typ. Max. Units Test Conditions Is Continuous Source Current 1.8 MOSFET , Appendix C: Part. Marking Information-See page 332 â  Appendix D: Tape & Reel Information - See page 336
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SS455 0-30Q AN-994 554S2 111181X131101131 S54S5

AN-994

Abstract: IRF7406 International iü Rectifier PRELIMINARY PD-9.1247B IRF7406 HEXFET® Power MOSFET â'¢ Generation V Technology â'¢ Ultra Low On-Resistance â'¢ P-Channel Mosfet â'¢ Surface Mount â'¢ Available in Tape & Reel â , Continuous Source Current (Body Diode) â'" â'" -2.0 A MOSFET symbol S showing the A integral reverse a â \Jj , tl) 16 â o > ® 1? o 1â'" o CO ld -2.8a vnc - -24v , 332. Appendix C: Part Marking Information â'" See page 332. Appendix D; Tape and Reel Information â
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Abstract: www.fairchildsemi.com FDA59N25 â'" N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1 , FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description â'¢ RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductorâ'™s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce , FDA59N25 Rev. C2 oC/W 40 1 www.fairchildsemi.com FDA59N25 â'" N-Channel UniFETTM MOSFET Fairchild Semiconductor
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IRF3205 application

Abstract: MOSFET MARKING ZA IRF3205S/L HEXFET® Power MOSFET Voss = 55V R d s (oh) = 0.008Q Id = 110A® Description Fifth , Conditions D MOSFET symbol _ 110® - showing the / I , A integral reverse a \. p ) - - 390 S p-n junction , : \ .i ` Urns 10 : t ~ .\ zA : -. . . . . . [ . 1: : ! . . ; . i L.;. : .J . , Transient Thermal Impedance, Junction-to-Case Mechanical drawings, Appendix A Part marking information
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IRF32305S IRF3205 application IRF3205L 1304B

B1470

Abstract: FS20KM-5 MOSFET LEAD FORMING OUTLINE AND TAPING (2) MP-3 (a) Marking â lO î L Orientation "1" Orientation , MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 â'¢ VDSS , ¼ MITSUBISHI Thfts Material Copyrighted By Its Respective Manuf ELEOTRIO MITSUBISHI Neh POWER MOSFET FS20KM , Respective Manufact' W1* MITSUBISHI ELECTRIC 75 MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED , GATE-SOURCE VOLTAGE VGS (V) UJ Sf CO S OUJ O LU Om 5 y o< cop £2 5 tn 5 w Sec ON-STATE RESISTANCE
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M-1510 FS 8201 mitsubishi fs20km-5

K775

Abstract: B1470 MOSFET LEAD FORMING OUTLINE AND TAPING TAPING (1 ) TO-220S (a) Marking -ID î L Orientation "1" , MITSUBISHI POWER MOSFET LEAD FORMING OUTLINE AND TAPING (2) MP-3 (a) Marking â lO î L Orientation "1" , MITSUBISHI Neh POWER MOSFET FS20UM-5 HIGH-SPEED SWITCHING USE FS20UM-5 â'¢ VDSS , 2.0 g b2LHÃ2T DDnb73 00b 66 JL MITSUBISHI 1 ELECTRIC Ai MITSUBISHI Neh POWER MOSFET FS20UM , < en II \\ o 2 s? i>m z=° "S I c ¡o > X
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sk 3005 mitsubishi marking diode ct 2405

FS10UM-5

Abstract: K775 MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 â'¢ VDSS , MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Teh = 25 , ELECTRIC 2-27 MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE lu ! , GATE-SOURCE VOLTAGE VGS (V) n » O Q LLI Ouj o< H « < w S LU O* ON-STATE RESISTANCE VS. DRAIN , " TJ O £ m x S O w â n m MITSUBISHI POWER MOSFET LEAD FORMING OUTLINE AND TAPING LEAD FORMING
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3DG5 FS10UM5 1.5A 150V power mosfet 3d fs 45
Abstract: MOSFET â'¢ â'¢ â'¢ â'¢ Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channei MOSFET . * «1 : n V q ss J O'â'" JJ f , * *| â'" G ~ iJ L-f~ s = -20V ^ D S (o n ) = , -0.78 -13 (Body Diode) a VsD trr Qrr A ! Conditions ! MOSFET symbol i showing ne , O R R ec tifier Package Outline Microô Outline Part Marking Information Micro6 E X A M P L , 2 000 2 4 20 0 0 ZA * I R L M S 1 9 0 2 27 2005 1998 W A F E R L OT NUMBER C -
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IRLMS6702 EIA-481 EIA-541
Abstract: FQD17P06 / FQU17P06 P-Channel QFET® MOSFET - 60 V, - 12 A, 135 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®â'™s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored , FQD17P06/ FQU17P06 P-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted , / FQU17P06 P-Channel QFET® MOSFET Elerical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V Fairchild Semiconductor
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FQD17P

AOZ1360

Abstract: marking alpha omega Marking SO-8 DFN4x4 10L LOGO Z1 3 6 0 D I ZA 8 R 1 B AOZ1360 Preliminary Data Sheet Rev0 9 , AOZ1360 Preliminary Data Sheet Rev0 Pin Function P-channel MOSFET source. Connect a 1uF capacitor , . Connect a resistor from SET to GND to set the switch current limit. No Connect P-channel MOSFET Drain , monitors the input voltage and prevents the output MOSFET from turning on until VIN exceeds 4.9V
Alpha & Omega Semiconductor
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DFN-10 AOZ1360AI AOZ1360DI marking alpha omega omega power amplifier diagram omega power amplifier circuit ALPHA OMEGA PART MARKING ALPHA SEMICONDUCTOR 4DFN10
Abstract: FQD17P06 / FQU17P06 P-Channel QFET® MOSFET - 60 V, - 12 A, 135 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®â'™s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored , www.fairchildsemi.com FQD17P06/ FQU17P06 P-Channel QFET® MOSFET June 2013 Symbol TC = 25°C unless , / FQU17P06 P-Channel QFET® MOSFET Elerical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V Fairchild Semiconductor
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1RF9510

Abstract: w5A marking International SêS Rectifier PD-9.390D IRF9510 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating â , Characteristics Parameter Min. Typ. Max. Units Test Conditions Is Continuous Source Current -4.0 MOSFET , -4-0A. di/dt , See page 1509 Appendix C: Part Marking information - See page 1516 IntCITICrtiOnOl Ml Rectifier , ® Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated
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IRF9510S 1RF9510 w5A marking ls40a 390D ScansUX102 1RF9510S

OFET

Abstract: FAIRCHILD January 2006 SEMICONDUCTOR® FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V,5.0A,40mQ General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(on) @VQS=2.5V on special MicroFET leadframe , Thermal Resistance, Junction-to-Ambient (Note 1 b) 52 Package Marking and Ordering Information ©2006 , Voltage Temperature Coefficient lD = 250joA, Referenced to 25°C 25.2 mV/°C 'dss ©ro Gâte Voltage
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OFET
Abstract: FA IRCHILD SEMICONDUCTOR® January 2006 FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 5.7A, 30mQ General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(on) @VQS=2.5V on special MicroFET leadframe , 1a) Thermal Resistance, Junction-to-Ambient (Note 1 b) 145 52 °C/W Package Marking and Ordering , Voltage Temperature Coefficient lD = 250joA, Referenced to 25°C 12 mV/°C ATj tass ©ro -
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XP202A0003

Abstract: XP202A XP202A0003MR-G P-channel 4V (G-S) MOSFET ETR1128-003 FEATURES Low On Resistance Ultra High Speed Switching 4V Driving EU RoHS Compliant, Pb Free APPLICATIONS Switching PRODUCT NAME PRODUCT NAME XP202A0003MR-G * PACKAGE SOT-23 ORDER UNIT 3,000/Reel The , SOT-23 MARKING RULE represents product series MARK , XP202A0003*-G represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to
Torex Semiconductor
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XP202A single diode sot-23 mark pd A9 marking diode sot23 12Represents sot-23 single diode mark PD SOT-23 MOSFET P-CHANNEL a1 1- mark 000/R
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