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Part Manufacturer Description Datasheet BUY
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

MOSFET IRF540n

Catalog Datasheet MFG & Type PDF Document Tags

irf540n

Abstract: MOSFET IRF540n IRF540N Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET , ) Ordering Information PART NUMBER IRF540N G PACKAGE TO-220AB BRAND IRF540N S TC = 25oC, Unless Otherwise Specified IRF540N UNITS V V V A A 100 100 ±20 33 23 Figure 4 Figures 6, 14, 15 120 0.80 -55 to 175 , of this specification is not implied. ©2001 Fairchild Semiconductor Corporation IRF540N Rev. A IRF540N Electrical Specifications PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage
Intersil
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MOSFET IRF540n IRF540NT

IRF540N

Abstract: mosfet irf540n PD - 91341A IRF540N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic , . Max. Units ­­­ 0.50 ­­­ 1.1 ­­­ 62 °C/W 5/13/98 IRF540N Electrical , Conditions D MOSFET symbol 33 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 110 p-n junction , (BR)DSS, TJ 175°C Pulse width 300µs; duty cycle 2% IRF540N 1000 1000 VGS 15V 10V , . Temperature IRF540N V GS C iss C rs s C iss C o ss C , Capacitance (pF) 2000 = = = = 20
International Rectifier
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IRF1010
Abstract: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET® Power MOSFET â , IRF540N_ TO R Electrical Characteristics @ Tj = 25°C (unless otherwise , 1.1 1.3 250 1.6 V ns M C Conditions MOSFET symbol showing the integral reverse p-n , 610 â'" s0 ( i â'˜) â'" ^ ft ISR IRF540N C 9 > 3 O D O w 6 ± 2 Q VDg , . Normalized On-Resistance Vs. Temperature 0D23Db4 757 â  IRF540N 2400 IÃR |VGS = 0V, f = 1MHz -
OCR Scan
T0-220 10CTC

IRF540N

Abstract: IRF1010 Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast , °C/W Previous Datasheet Index Next Data Sheet IRF540N Electrical Characteristics @ TJ = , ­­­ ­­­ ­­­ 170 1.1 1.3 250 1.6 A V ns µC Conditions MOSFET symbol showing the , Index Next Data Sheet IRF540N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM
International Rectifier
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IRF540N

Abstract: MOSFET IRF540n PD - 91341A IRF540N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic , . Max. Units ­­­ 0.50 ­­­ 1.1 ­­­ 62 °C/W 5/13/98 IRF540N Electrical , Conditions D MOSFET symbol 33 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 110 p-n junction , (BR)DSS, TJ 175°C Pulse width 300µs; duty cycle 2% IRF540N 1000 1000 VGS 15V 10V , . Temperature IRF540N V GS C iss C rs s C iss C o ss C , Capacitance (pF) 2000 = = = = 20
International Rectifier
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ISD 1400 d

IRF540N

Abstract: 91341B PD - 91341B IRF540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology , Typ. Max. Units ­­­ 0.50 ­­­ 1.15 ­­­ 62 °C/W 1 03/13/01 IRF540N , . Max. Units Conditions D MOSFET symbol 33 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ , to TJ = 175°C . 2 www.irf.com IRF540N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V , . Temperature 3 IRF540N VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds +
International Rectifier
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4.5V TO 100V INPUT REGULATOR 16ans

91341B

Abstract: irf540n PD - 91341B IRF540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology , Typ. Max. Units ­­­ 0.50 ­­­ 1.15 ­­­ 62 °C/W 1 03/13/01 IRF540N , . Max. Units Conditions D MOSFET symbol 33 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ , to TJ = 175°C . 2 www.irf.com IRF540N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V , . Temperature 3 IRF540N VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds +
International Rectifier
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irf540n

Abstract: MOSFET IRF540n IRF540N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) IRF540N · Ultra Low On-Resistance - , Pulse Width Curve · UIS Rating Curve Ordering Information Symbol D PART NUMBER IRF540N PACKAGE TO-220AB BRAND IRF540N G S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF540N UNITS 100 V 100 V ±20 V Drain Current Continuous (TC= 25oC, VGS
Fairchild Semiconductor
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power 22E Datasheet IRF540n AN7254 AN7260 AN9321 AN9322

IRF540N

Abstract: MOSFET IRF540n PD - 9.1341 IRF540N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology Dynamic , ­­­­ 1.6 ­­­­ 62 °C/W IRF540N Electrical Characteristics @ TJ = 25°C (unless otherwise , µC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = , ; duty cycle 2%. IRF540N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V , IRF540N 2400 VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 20 V GS = 0V, f =
International Rectifier
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irf1010 applications

IRF540n

Abstract: MOSFET IRF540n IRF540N TM Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) · Ultra , NUMBER IRF540N PACKAGE TO-220AB BRAND IRF540N G S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF540N UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . , Corporation 2000 IRF540N TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER
Intersil
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mosfet 4842 TB334 ISO9000
Abstract: PD - 91341B IRF540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology , °C/W 1 03/13/01 IRF540N Electrical Characteristics @ TJ = 25°C (unless otherwise specified , Time Min. Typ. Max. Units Conditions D MOSFET symbol 33 â'"â'"â'" â'"â'"â'" showing the A , calculated value limited to TJ = 175°C . 2 www.irf.com IRF540N 1000 #20; 1000 VGS 15V 10V , . Normalized On-Resistance Vs. Temperature 3 IRF540N VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds International Rectifier
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Abstract: IRF540N TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET , www.kersemi.com IRF540N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS , . Max. Units Conditions D MOSFET symbol 33 â'"â'"â'" â'"â'"â'" showing the A G integral , 175°C . 2014-8-9 2 www.kersemi.com IRF540N 1000 #20; 1000 VGS 15V 10V 8.0V 7.0V KERSEMI
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IRF540N

Abstract: huf76639p3 Power MOSFET SPICE and Thermal Models TM Features · · · · · · · Sub Circuit Approach , Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation POWER MOSFET , HUF76633S3S HUF76639P3 HUF76639S3S HUF76645P3 HUF76645S3S HUFA7510P3 HUFA7510S3S IRF530N IRF540N , RLD03N06CLE RLP03N06CLE RLP1N08LE © Intersil Corporation 2000 Power MOSFET SPICE and Thermal Models , Thermal Resistance (ZJC) Representation POWER MOSFET THERMAL MODELS Available on the web @
Intersil
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HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HRF3205 equivalent ITF87056DQT HUF75623P3 huf75339 HUF76343 RF1K49093

irf540n irf640

Abstract: IRF630 complementary MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 , IRF530N IRF540N IRF610 IRF620 IRF630 IRF640 IRF646 IRF710 IRF720 IRF730 IRF740 IRF820 IRF830 , MOSFET Selection Trees P-CHANNEL MOSFETs P-CHANNEL STANDARD GATE MOSFETs IRF9510 IRF9520 IRF9530
Intersil
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IRF510N IRFR110N IRFU120N irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary HUF75321S3S HUF75329D3 HUF75329D3S HUF75329G3 HUF75329P3 HUF75329S3S

EF25 transformer

Abstract: transformer winding formula step down this system both power switching MOSFET sources are connected to 0V. In order to obtain the required current level and phase information a sense resistor must be added from the source of the LO side MOSFET , consisting of R15 and C10 is also added to reduce ringing overshoot voltages that occur when each MOSFET , be achieved using the IR2159 which has a fixed dead time of 1.8uS. The MOSFETs used are type IRF540N , ) R4 12K MAX 5 R5 27K MIN R6 36K FMIN R7 27K IRF540N VS 3 R3 10K Q1
International Rectifier
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AN1038 IR2156 EF25 transformer transformer winding formula step down 100nF 400V polyester capacitor AN1038 application ferrite material 3c85 capacitor 470nf 50v IRF540

complementary of irf830

Abstract: IRF630 complementary Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3 HUF75329D3S , HUF75831SK8 HUF75842P3 HUF75842S3S HUF75852G3 IRF510 IRF520 IRF530N IRF540N IRF610 IRF620 IRF630 , © Intersil Corporation 2000 MOSFET Selection Trees P-CHANNEL STANDARD GATE MOSFETs IRF9510 IRF9520
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IRFP150N complementary of irf830 IRF640 irf510 IRF610 complementary IRFP150 Irfp250 irfp460 HUF75332G3 HUF75332P3 HUF75332S3S HUF75333G3 HUF75333P3 HUF75333S3S

equivalent of irf540n

Abstract: IRF540 PD - 94833 IRFI540NPbF HEXFET® Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS(on) = 0.052 G Description ID = 20A S Fifth , 1.1 1.3 250 1.6 A V ns µC Conditions MOSFET symbol showing the integral reverse p-n , = 25°C, L = 2.0mH t=60s, =60Hz ISD 16A, di/dt 210A/µs, VDD V(BR)DSS, Uses IRF540N
International Rectifier
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equivalent of irf540n irf540n or equivalent irf540N equivalent IRFI540NP I840G

ELECTRONIC BALLAST 36W circuit diagram

Abstract: EF25 transformer the lamp. In this system both power switching MOSFET sources are connected to 0V. In order to obtain , LO side MOSFET to 0V. The current will be much larger at this point than in a mains powered ballast , when each MOSFET switches off. The snubber will also increase the commutation time at switch off so , used are type IRF540N which have a Vdss rating of 100V and Rds(on) of 0.044 at 25ºC. The peak drain , ) R4 12K MAX 5 R5 27K MIN R6 36K FMIN R7 27K IRF540N VS 3 R3 10K Q1
International Rectifier
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ELECTRONIC BALLAST 36W circuit diagram circuit diagram electronic ballast for 36W tube EF25 ferrite transformer ungapped EF25 n27 36W Ballast E25/13/7 EF25 AN-1038

irf540

Abstract: IRF540NS Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 33 ­­­ ­­­ , limits. This is a calculated value limited to TJ = 175°C . Uses IRF540N data and test conditions
International Rectifier
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AN-994 IRF540NS IRF540NL to262 pcb footprint diode 16A 100V IRF540NS/IRF540NL

IRF540NS D2PAK

Abstract: IRF540NS Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 33 ­­­ ­­­ , limits. This is a calculated value limited to TJ = 175°C . Uses IRF540N data and test conditions
International Rectifier
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IRF540NS D2PAK ir 941 EIA-418
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