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LM4908LQBD Texas Instruments LM4908 10kV ESD Rated, Dual 120mW Headphone Amplifier visit Texas Instruments
HIP6601BCBZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HIP6603BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6596IBZ Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6608CBZ Intersil Corporation Synchronous Rectified MOSFET Driver; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6609AIRZ Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

MOSFET ESD Rated

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: P-Channel 1.2-V (G-S) Rated MOSFET VDS = -8 V, ID = -1.6 A rDS(on) = 78 milliohms Si8424DB NEW N-Channel 1.2V (G-S) Rated MOSFET VDS = 8 V, ID = 12.2 A rDS(on) = 31 milliohms SMD MICRO FOOT 1.6 x 1.6 Si8429DB NEW P-Channel 1.2V (G-S) Rated MOSFET VDS = -8 V, ID = -11.7 A rDS(on) = 35 milliohms SMD MICRO FOOT 1.6 x 1.6 Si8441DB NEW P-Channel 1.2-V (G-S) Rated MOSFET , P-Channel 1.2-V (G-S) Rated MOSFET VDS = -20 V, ID = -9.8 A rDS(on) = 84 milliohms SMD MICRO FOOT Vishay Intertechnology
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LLP1006-2L VESD05A1B-HD1 VLMW3200 VLMW3201 GMF05LC-HSF VESD09A4A-HS4
Abstract: Name 2N7002K Status Description N-Ch; 60V (DS) MOSFET; add ESD protect function Features , '¢ Visible LEDS â'¢ Inductors/EMI Filters â'¢ Transient/Overvoltage Protection Devices â'¢ ESD Protection , such as ESD protection, current limiting, or load switching. page 2 xDSL ModemRouter : DC/DC , N-Channel 30-V (D-S) Mosfet Features N-Channel; 30-V (D-S); rDS(on) = 0.0095 Ohm; Package Q-Level , ) Mosfet Features N-channel 30V rDSon= 0.0039 Ohm ID=30.5 A Package Q-Level SO-8 page 5 Vishay Intertechnology
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IHLP1616-01 IHLP2525CZ-01 IHLP4040DZ-01 IHLP4040DZ-11 1N4148WS-V BAT54A-V

Power MOSFET p-Channel n-channel dual

Abstract: 2A 12v nChannel mosfet , 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETTM Power MOSFET. 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET. 8-9 8-13 8-17 8-23 , . 1,4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET , N-Channel, Logic Level Power MOSFET. 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET. 3A, 55V, 0.070 Ohm, N-Channel
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Power MOSFET p-Channel n-channel dual 2A 12v nChannel mosfet MOSFET 6A MOSFET ESD Rated 60V 2A MOSFET N-channel power mosfet HP4410DY HP4936DY HUF75307T3ST HUF75309T3ST HUF75631SK8 HUF76105DK8

100V 60A Mosfet

Abstract: 50V 60A MOSFET . 4-51 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET. . . . 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET. . . . 25A, 60V, Hermetically , 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs. . . . 4-21 15A , POWER MOSFETs 4 PAGE 4-3 4-9 4-15 P-CHANNEL POWER MOSFETs P-CHANNEL POWER MOSFET DATA , 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .
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100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET 451 MOSFET P-Channel mosfet 30a 200v IRFU9110 IRFR9110 IRFU9120 IRFR9120 IRFR9220 IRFU9220

HUF76639

Abstract: MOSFET 60V 75A . 6-200 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs , . 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs. 4A , . 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs , . N-Channel Logic Level MOSFET Data Sheets HPLR3103, HPLU3103 HUF76107D3, HUF76107D3S HUF76107P3 HUF76121D3 , , Logic LevelUltraFET Power MOSFET. 27A, 60V, 0.040 Ohm, N-Channel, Logic
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HUF76639 MOSFET 60V 75A 100V 8A N-Channel MOSFET Power MOSFET 50V 20A huf76439p3 NCH 60V 20A HUF76121D3S HUF76121P3 HUF76121S3S HUF76129D3 HUF76129D3S HUF76129P3
Abstract: 1.0A SMD Micro SMP SSA34 40V, 3A 0.42V at 3.0A Q-Level SMA Switching MOSFET Product Name Status Si1032X Description N-channel 20V MOSFET VDS = 20V ; ID = 200mA ; rds(on) = , : Peripherals, Printer Power MOSFET Product Name Si4116DY Status Description N-channel 25V MOSFET VDS , page 6 Payment Systems : Peripherals, USB ESD protection diode Product Name VBUS051BD Status Description Single Line ESD protection device ESD Immunity > 15 kV Features Low capacitance Ultra Vishay Intertechnology
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7633DP IHLP2525 SIS402DN VLMW321 VEMI65AC LLP2513-13L

supercap

Abstract: the next SAB MOSFET down in the series, ALD810025. For an ALD810025 operating at a max. rated , /ALD910024/ALD910025/ ALD910026/ALD910027/ALD910028 DUAL SUPERCAPACITOR AUTO BALANCING (SABâ"¢) MOSFET , stacks and arrays â'¢ Near zero additional leakage currents â'¢ Zero leakage at 0.3V below rated , extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple , MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current
Advanced Linear Devices
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supercap ALD910023/ALD910024/ALD910025/ ALD8100 ALD9100 ALD910023 ALD910024 ALD910025

ALD810026SCL

Abstract: supply using two 2.7V rated supercaps connected in a series and a single SAB MOSFET array package. For a , /ALD810024/ALD810025/ ALD810026/ALD810027/ALD810028 QUAD SUPERCAPACITOR AUTO BALANCING (SABâ"¢) MOSFET , stacks and arrays â'¢ Near zero additional leakage currents â'¢ Zero leakage at 0.3V below rated , extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple , SAB MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current
Advanced Linear Devices
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ALD810026SCL ALD810023/ALD810024/ALD810025/ ALD810023 ALD810024 ALD810026 ALD810027 ALD810028

field-effect transistors

Abstract: RFP8N18L 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET (MegaFET , , 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs (MegaFETs , Enhancement-Mode Power Field-Effect Transistors . . . 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel , MOSFET DATA SHEETS 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L , ). 10A, -30V, Avalanche Rated, Logic Level P-Channel Enhancement-Mode Power MOSFETs (MegaFETs
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RFP14N05L RFP25N06L field-effect transistors RFP8N18L 05LSM M 615 transistor transistor T 67 RFL2N05L RFL2N06L RFW2N06RLE RFP2N08L RFP2N10L RFP2N12L

P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A , Fork Lift, Microwave Oven 5. Conclusion APEC '99 Planar versus Trench-Gate MOSFET Unit , APEC '99 Trench-Gate MOSFET Technology Focus: · · · · · · · Low voltage types 20V - 150V , ) at low driving voltage Preserve ESD ruggedness APEC '99 Low voltage MOSFETs benefit most from trench gate: % of RDS(ON) Typical 60V High Density Planar Gate MOSFET Typical 500V MOSFET RCH 30% 10% RJFET 20% 5% RN- 30% 80% Other 20% 5% Trench
Powerex
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CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CM300DU-24F CY25AAJ-8 350VDC CM600HA-5F CM450HA-5F CM350DU-5F
Abstract: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List , /02/10 2011/07/20 Revision F Page. 9 Formosa MS ESD N-Channel SMD MOSFET 2N7002K 60V N-Channel Enhancement Mode MOSFET- ESD Protection Package outline Features 0.012 (0.30 , ESD N-Channel SMD MOSFET 2N7002K Electrical characteristics (AT T =25 C unless otherwise noted) o , -251105 2008/02/10 2011/07/20 Revision F Page. 9 Formosa MS ESD N-Channel SMD MOSFET Formosa MS
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DS-251105 MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1026

corona treatment circuit

Abstract: MOSFET ESD Rated . 2 4. ESD Failure of the Power MOSFET , . Statistically, it is unlikely that a particular MOSFET will be destroyed by Electrostatic-Discharge (ESD). , high-energy ESD. ESD Failure of the Power MOSFET Failure Mode One of the biggest operating advantages of the power MOSFET can also be the cause of its demise when it comes to ESD ultra-high input resistance , insulation. Figure 1. Basic HEXFET Structure ESD destruction of the MOSFET occurs when the
International Rectifier
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AN-955 corona treatment circuit esd protect mosfet corona discharge circuit

SCHEMATIC POWER SUPPLY WITH mosfet

Abstract: MOSFET ESD Rated voltage which exceeds the MOSFET input voltage. For suppression of ESD, a device rated at 300W (tp = 8 , ://www.semtech.com Transient Protection of MOSFETS One of the most common causes of failure in MOSFET devices , cause transients which can force VDS to exceed the maximum breakdown voltage of the MOSFET. If the transient contains enough energy, the MOSFET will be destroyed if it begins to avalanche. Drain-Source Protection One method of protecting the MOSFET is to connect a TVS diode from drain to source. To choose
Semtech
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SCHEMATIC POWER SUPPLY WITH mosfet the mosfet 652 diode TRANSIENT mosfet tvs-diode TVS Diode SI96-13
Abstract: voltage which exceeds the MOSFET input voltage. For suppression of ESD, a device rated at 300W (tp = 8 , : 805-498-3804 Transient Protection of M O SFETS One of the most common causes of failure in MOSFET devices , can cause transients which can force VD to S exceed the maximum breakdown voltage of the MOSFET. If the transient contains enough energy, the MOSFET will be destroyed if it begins to avalanche. Drain-Source Protection One method of protecting the MOSFET is to connect a TVS diode from drain to source -
OCR Scan

SCHEMATIC POWER SUPPLY WITH mosfet

Abstract: TVS Diode voltage which exceeds the MOSFET input voltage. For suppression of ESD, a device rated at 300W (tp = 8 , MOSFETS One of the most common causes of failure in MOSFET devices results from exceeding the maximum , VDS to exceed the maximum breakdown voltage of the MOSFET. If the transient contains enough energy, the MOSFET will be destroyed if it begins to avalanche. l Gate-Source Protection Transient on the input of the MOSFET can puncture the thin gate oxide of the device and melt the silicon
Semtech
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MOSFET "CURRENT source" mosfet diagram power supply silicon diode load

GRM21BR71C475KA73L

Abstract: N-channel MOSFET. Supply VDD (supply) is rated for +2.7V to +9V. An external capacitor is recommended to , MIC5019 Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump General Description The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an NChannel enhancement type MOSFET control signal in high-side or low­side applications. The MIC5019 operates , mode. In high side configurations, the source voltage of the MOSFET approaches the supply voltage when
Micrel Semiconductor
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GRM21BR71C475KA73L

IRF540 n-channel MOSFET

Abstract: IRF540 mosfet with maximum VDS 12v standard MOSFET. The MIC5018 is available in the SOT-143 package and is rated for ­40°C to +85°C ambient , MOSFET protection Operates in low- and high-side configurations TTL compatible input ESD protected , MIC5018 Micrel MIC5018 IttyBittyTM High-Side MOSFET Driver Preliminary Information General Description Features The MIC5018 IttyBittyTM high-side MOSFET driver is designed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side
Micrel Semiconductor
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IRF540 n-channel MOSFET IRF540 mosfet with maximum VDS 12v Zener diode with 9v 5V GATE TO SOURCE VOLTAGE MOSFET IRF540 mosfet Zener 9v IRF540

SI96-13

Abstract: SCHEMATIC POWER SUPPLY WITH mosfet voltage which exceeds the MOSFET input voltage. For suppression of ESD, a device rated at 300W (tp = 8 , recommended. One of the most common causes of failure in MOSFET devices results from exceeding the maximum , VDS to exceed the maximum breakdown voltage of the MOSFET. If the transient contains enough energy, the MOSFET will be destroyed if it begins to avalanche. Gate-Source Protection Transient on the input of the MOSFET can puncture the thin gate oxide of the device and melt the silicon. Transients at
Semtech
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Switching Power Supply Schematic Diagram mosfet 300w TVS diode Application Note 300w power diode 10 A power MOSFET

corona treatment circuit

Abstract: AN-955 MOSFET will be destroyed by Electrostatic-Discharge (ESD). However, when thousands of MOSFETs are , . Figure 1. Basic HEXFET Structure ESD destruction of the MOSFET occurs when the gate-to-source voltage is , MOSFET. The failure mode is ESD but the effect is caused by placing the unprotected gate of the FET in a , measures. Materials and Methods for ESD Control Direct Protection Method In protecting any power MOSFET , IR Application Note AN-955 TITLE: Protecting IGBTs and MOSFETs from ESD Notices: (HEXFET is
International Rectifier
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Abstract: MIC5019 Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump General Description The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an NChannel enhancement type MOSFET control signal in high-side or lowâ'"side applications. The MIC5019 , shutdown mode. In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019â'™s output drives the MOSFET gate Micrel Semiconductor
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